KR101421258B1 - Ａｐｃ 제어 방법으로 노출 필드 내 오버레이 오차를 줄이는 방법 및 시스템 - Google Patents

Ａｐｃ 제어 방법으로 노출 필드 내 오버레이 오차를 줄이는 방법 및 시스템 Download PDF

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KR101421258B1
KR101421258B1 KR1020097005323A KR20097005323A KR101421258B1 KR 101421258 B1 KR101421258 B1 KR 101421258B1 KR 1020097005323 A KR1020097005323 A KR 1020097005323A KR 20097005323 A KR20097005323 A KR 20097005323A KR 101421258 B1 KR101421258 B1 KR 101421258B1
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South Korea
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overlay
data
device layer
reticle
measurement
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KR20090067139A (ko
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롤프 셀트만
베른트 슐츠
프리트조프 헴펠
우웨 슐제
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020097005323A 2006-08-31 2007-08-24 Ａｐｃ 제어 방법으로 노출 필드 내 오버레이 오차를 줄이는 방법 및 시스템 Active KR101421258B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006040766.0 2006-08-31
DE102006040766 2006-08-31
DE102007038702A DE102007038702A1 (de) 2006-08-31 2007-08-16 Verfahren und System zum Reduzieren der Überlagerungsfehler in Belichtungsfeldern mittels APC-Steuerungsstrategien
DE102007038702.6 2007-08-16
PCT/EP2007/007453 WO2008025492A1 (en) 2006-08-31 2007-08-24 A method and a system for reducing overlay errors within exposure fields by apc control strategies

Publications (2)

Publication Number Publication Date
KR20090067139A KR20090067139A (ko) 2009-06-24
KR101421258B1 true KR101421258B1 (ko) 2014-07-18

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KR1020097005323A Active KR101421258B1 (ko) 2006-08-31 2007-08-24 Ａｐｃ 제어 방법으로 노출 필드 내 오버레이 오차를 줄이는 방법 및 시스템

Country Status (5)

Country Link
EP (1) EP2057506B1 (enExample)
JP (1) JP5134625B2 (enExample)
KR (1) KR101421258B1 (enExample)
DE (1) DE102007038702A1 (enExample)
WO (1) WO2008025492A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11495504B2 (en) 2020-02-19 2022-11-08 SK Hynix Inc. Semiconductor device and manufacturing method of semiconductor device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2009345A (en) 2011-09-28 2013-04-02 Asml Netherlands Bv Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods.
US9442391B2 (en) 2013-03-12 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay sampling methodology
US10146141B2 (en) 2014-08-28 2018-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography process and system with enhanced overlay quality
CN107735731B (zh) 2015-07-03 2020-12-22 Asml荷兰有限公司 光刻设备、控制方法及计算机程序产品
US9841687B2 (en) 2015-07-14 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Synchronized integrated metrology for overlay-shift reduction
WO2019120826A1 (en) 2017-12-19 2019-06-27 Asml Netherlands B.V. Computational metrology based correction and control
KR102739716B1 (ko) * 2019-08-22 2024-12-05 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 제어 방법
KR20250015898A (ko) * 2023-07-24 2025-02-03 캐논 가부시끼가이샤 리소그래피 방법, 물품 제조방법, 정보 처리방법, 컴퓨터 프로그램 및 정보 처리장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188171A (ja) * 1993-08-13 1994-07-08 Nikon Corp 投影露光装置
JPH0982607A (ja) * 1995-09-13 1997-03-28 Nikon Corp 露光方法
JP2002222752A (ja) * 2001-01-26 2002-08-09 Hitachi Ltd 半導体デバイスの製造方法およびそのシステム
JP2003163156A (ja) * 2001-11-28 2003-06-06 Toshiba Corp 露光方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114132A (ja) * 1998-10-01 2000-04-21 Hitachi Ulsi Systems Co Ltd 生産支援システム、重ね合わせ精度の検査方法および記録媒体
JP2002280286A (ja) * 2001-03-19 2002-09-27 Hitachi Ltd 電子装置の製造方法、露光制御システム並びに電子部品及びその製造方法
TWI266154B (en) 2004-09-21 2006-11-11 Promos Technologies Inc Method and system for determining lithography overlay offsets
TWI281115B (en) 2005-01-25 2007-05-11 Promos Technologies Inc Integration system for managing photolithography tools and the method for operating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188171A (ja) * 1993-08-13 1994-07-08 Nikon Corp 投影露光装置
JPH0982607A (ja) * 1995-09-13 1997-03-28 Nikon Corp 露光方法
JP2002222752A (ja) * 2001-01-26 2002-08-09 Hitachi Ltd 半導体デバイスの製造方法およびそのシステム
JP2003163156A (ja) * 2001-11-28 2003-06-06 Toshiba Corp 露光方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11495504B2 (en) 2020-02-19 2022-11-08 SK Hynix Inc. Semiconductor device and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
EP2057506B1 (en) 2012-08-01
KR20090067139A (ko) 2009-06-24
JP2010502024A (ja) 2010-01-21
WO2008025492A1 (en) 2008-03-06
JP5134625B2 (ja) 2013-01-30
DE102007038702A1 (de) 2008-07-31
EP2057506A1 (en) 2009-05-13

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