JP5134625B2 - Ａｐｃ制御ストラテジーにより露光フィールド内のオーバーレイ誤差を小さくする方法およびシステム - Google Patents

Ａｐｃ制御ストラテジーにより露光フィールド内のオーバーレイ誤差を小さくする方法およびシステム Download PDF

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JP5134625B2
JP5134625B2 JP2009525960A JP2009525960A JP5134625B2 JP 5134625 B2 JP5134625 B2 JP 5134625B2 JP 2009525960 A JP2009525960 A JP 2009525960A JP 2009525960 A JP2009525960 A JP 2009525960A JP 5134625 B2 JP5134625 B2 JP 5134625B2
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overlay
data
reticle
device layer
measurement
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JP2010502024A (ja
JP2010502024A5 (enExample
Inventor
ゼルトマン ロルフ
シュルツ ベルント
ヘンペル フリッチョフ
シュルツェ ウベ
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2009525960A 2006-08-31 2007-08-24 Ａｐｃ制御ストラテジーにより露光フィールド内のオーバーレイ誤差を小さくする方法およびシステム Active JP5134625B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102006040766.0 2006-08-31
DE102006040766 2006-08-31
DE102007038702A DE102007038702A1 (de) 2006-08-31 2007-08-16 Verfahren und System zum Reduzieren der Überlagerungsfehler in Belichtungsfeldern mittels APC-Steuerungsstrategien
DE102007038702.6 2007-08-16
PCT/EP2007/007453 WO2008025492A1 (en) 2006-08-31 2007-08-24 A method and a system for reducing overlay errors within exposure fields by apc control strategies

Publications (3)

Publication Number Publication Date
JP2010502024A JP2010502024A (ja) 2010-01-21
JP2010502024A5 JP2010502024A5 (enExample) 2012-06-21
JP5134625B2 true JP5134625B2 (ja) 2013-01-30

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JP2009525960A Active JP5134625B2 (ja) 2006-08-31 2007-08-24 Ａｐｃ制御ストラテジーにより露光フィールド内のオーバーレイ誤差を小さくする方法およびシステム

Country Status (5)

Country Link
EP (1) EP2057506B1 (enExample)
JP (1) JP5134625B2 (enExample)
KR (1) KR101421258B1 (enExample)
DE (1) DE102007038702A1 (enExample)
WO (1) WO2008025492A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2009345A (en) 2011-09-28 2013-04-02 Asml Netherlands Bv Method of applying a pattern to a substrate, device manufacturing method and lithographic apparatus for use in such methods.
US9442391B2 (en) 2013-03-12 2016-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay sampling methodology
US10146141B2 (en) 2014-08-28 2018-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography process and system with enhanced overlay quality
CN107735731B (zh) 2015-07-03 2020-12-22 Asml荷兰有限公司 光刻设备、控制方法及计算机程序产品
US9841687B2 (en) 2015-07-14 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Synchronized integrated metrology for overlay-shift reduction
WO2019120826A1 (en) 2017-12-19 2019-06-27 Asml Netherlands B.V. Computational metrology based correction and control
KR102739716B1 (ko) * 2019-08-22 2024-12-05 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 제어 방법
KR102824041B1 (ko) 2020-02-19 2025-06-23 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 제조 방법
KR20250015898A (ko) * 2023-07-24 2025-02-03 캐논 가부시끼가이샤 리소그래피 방법, 물품 제조방법, 정보 처리방법, 컴퓨터 프로그램 및 정보 처리장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738376B2 (ja) * 1993-08-13 1995-04-26 株式会社ニコン 投影露光装置
JP3651074B2 (ja) * 1995-09-13 2005-05-25 株式会社ニコン 露光方法、それを用いた半導体集積回路又は液晶表示素子の製造方法、及び露光装置
JP2000114132A (ja) * 1998-10-01 2000-04-21 Hitachi Ulsi Systems Co Ltd 生産支援システム、重ね合わせ精度の検査方法および記録媒体
JP4022374B2 (ja) 2001-01-26 2007-12-19 株式会社ルネサステクノロジ 半導体デバイスの製造方法およびそのシステム
JP2002280286A (ja) * 2001-03-19 2002-09-27 Hitachi Ltd 電子装置の製造方法、露光制御システム並びに電子部品及びその製造方法
JP3626448B2 (ja) * 2001-11-28 2005-03-09 株式会社東芝 露光方法
TWI266154B (en) 2004-09-21 2006-11-11 Promos Technologies Inc Method and system for determining lithography overlay offsets
TWI281115B (en) 2005-01-25 2007-05-11 Promos Technologies Inc Integration system for managing photolithography tools and the method for operating the same

Also Published As

Publication number Publication date
EP2057506B1 (en) 2012-08-01
KR20090067139A (ko) 2009-06-24
JP2010502024A (ja) 2010-01-21
WO2008025492A1 (en) 2008-03-06
DE102007038702A1 (de) 2008-07-31
KR101421258B1 (ko) 2014-07-18
EP2057506A1 (en) 2009-05-13

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