KR101412234B1 - 고체 촬상 디바이스 - Google Patents

고체 촬상 디바이스 Download PDF

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Publication number
KR101412234B1
KR101412234B1 KR1020080024044A KR20080024044A KR101412234B1 KR 101412234 B1 KR101412234 B1 KR 101412234B1 KR 1020080024044 A KR1020080024044 A KR 1020080024044A KR 20080024044 A KR20080024044 A KR 20080024044A KR 101412234 B1 KR101412234 B1 KR 101412234B1
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South Korea
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photoelectric conversion
film
color filter
solid
imaging device
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Korean (ko)
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KR20080084749A (ko
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다카시 고토
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후지필름 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/192—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020080024044A 2007-03-16 2008-03-14 고체 촬상 디바이스 Active KR101412234B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007068587 2007-03-16
JPJP-P-2007-00068587 2007-03-16

Publications (2)

Publication Number Publication Date
KR20080084749A KR20080084749A (ko) 2008-09-19
KR101412234B1 true KR101412234B1 (ko) 2014-06-25

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US (1) US7920189B2 (enExample)
JP (1) JP4637196B2 (enExample)
KR (1) KR101412234B1 (enExample)

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JP2007081137A (ja) * 2005-09-14 2007-03-29 Fujifilm Corp 光電変換素子及び固体撮像素子
KR101038874B1 (ko) * 2008-11-06 2011-06-02 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5353200B2 (ja) * 2008-11-20 2013-11-27 ソニー株式会社 固体撮像装置および撮像装置
US7943989B2 (en) * 2008-12-31 2011-05-17 Alpha And Omega Semiconductor Incorporated Nano-tube MOSFET technology and devices
US10121857B2 (en) * 2008-12-31 2018-11-06 Alpha And Omega Semiconductor Incorporated Nano-tube MOSFET technology and devices
US9508805B2 (en) * 2008-12-31 2016-11-29 Alpha And Omega Semiconductor Incorporated Termination design for nanotube MOSFET
JP5412124B2 (ja) * 2009-02-02 2014-02-12 富士フイルム株式会社 光電変換装置及び固体撮像装置
JP4741015B2 (ja) * 2009-03-27 2011-08-03 富士フイルム株式会社 撮像素子
US8299494B2 (en) 2009-06-12 2012-10-30 Alpha & Omega Semiconductor, Inc. Nanotube semiconductor devices
US7910486B2 (en) * 2009-06-12 2011-03-22 Alpha & Omega Semiconductor, Inc. Method for forming nanotube semiconductor devices
JP5671789B2 (ja) * 2009-08-10 2015-02-18 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP2011071482A (ja) * 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡
JP5537905B2 (ja) * 2009-11-10 2014-07-02 富士フイルム株式会社 撮像素子及び撮像装置
JP5509846B2 (ja) * 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR20110077451A (ko) * 2009-12-30 2011-07-07 삼성전자주식회사 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치
JP2011198853A (ja) 2010-03-17 2011-10-06 Fujifilm Corp マイクロレンズ非搭載の光電変換膜積層型固体撮像素子及びその製造方法並びに撮像装置
JP2011258729A (ja) * 2010-06-08 2011-12-22 Panasonic Corp 固体撮像装置及びその製造方法
JP5585232B2 (ja) * 2010-06-18 2014-09-10 ソニー株式会社 固体撮像装置、電子機器
JP5677921B2 (ja) 2010-09-27 2015-02-25 富士フイルム株式会社 光電変換素子の製造方法
WO2012043070A1 (ja) 2010-09-27 2012-04-05 富士フイルム株式会社 光電変換素子の製造方法、固体撮像素子、撮像装置
JP2012169584A (ja) * 2011-01-27 2012-09-06 Fujifilm Corp 固体撮像素子及び撮像装置
JP5694840B2 (ja) 2011-04-20 2015-04-01 富士フイルム株式会社 有機撮像素子および有機撮像素子の製造方法
JP2013026332A (ja) * 2011-07-19 2013-02-04 Sony Corp 固体撮像素子および製造方法、並びに電子機器
KR101774491B1 (ko) 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
US9601538B2 (en) * 2012-05-03 2017-03-21 Semiconductor Components Industries, Llc Image sensors with photoelectric films
KR101989907B1 (ko) 2012-05-31 2019-06-17 삼성전자주식회사 유기 이미지 센서 및 그 제조방법
JP5759421B2 (ja) * 2012-06-20 2015-08-05 富士フイルム株式会社 固体撮像素子および撮像装置
JP6135109B2 (ja) * 2012-12-07 2017-05-31 ソニー株式会社 固体撮像素子および固体撮像素子の製造方法ならびに電子機器
KR102078621B1 (ko) 2013-04-18 2020-02-19 삼성전자주식회사 이미지 센서 및 이를 포함하는 컴퓨팅 시스템
JP6075458B2 (ja) * 2013-09-18 2017-02-08 富士電機株式会社 半導体装置およびその製造方法
KR102136852B1 (ko) 2013-12-30 2020-07-22 삼성전자 주식회사 Tfa 기반의 시모스 이미지 센서 및 그 동작방법
US9362327B2 (en) 2014-01-15 2016-06-07 Samsung Electronics Co., Ltd. Image sensor and electronic device including the same
JP6482185B2 (ja) * 2014-05-12 2019-03-13 日本放送協会 固体撮像素子
US9338350B2 (en) * 2014-05-30 2016-05-10 Semiconductor Components Industries, Llc Image sensors with metallic nanoparticle optical filters
KR102296736B1 (ko) * 2014-08-27 2021-08-31 삼성전자주식회사 적층형 촬상 소자
US12009379B2 (en) * 2017-05-01 2024-06-11 Visera Technologies Company Limited Image sensor

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JP2004179266A (ja) 2002-11-25 2004-06-24 Konica Minolta Holdings Inc 放射線画像検出器
JP2004296458A (ja) 2003-03-25 2004-10-21 Osaka Gas Co Ltd フィルタ機能付き光センサ及び火炎センサ
JP2006186118A (ja) 2004-12-28 2006-07-13 Sony Corp 固体撮像素子、固体撮像素子の製造方法および撮像装置

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JPS6042989A (ja) 1983-08-18 1985-03-07 Mitsubishi Electric Corp 固体撮像装置
JPH06204445A (ja) 1993-01-01 1994-07-22 Canon Inc 光センサ及びそれを有する画像情報処理装置
US5453611A (en) 1993-01-01 1995-09-26 Canon Kabushiki Kaisha Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip
CN1181569C (zh) 1998-02-02 2004-12-22 杜邦显示器股份有限公司 有机半导体图像传感器
US7196391B2 (en) * 2002-02-05 2007-03-27 E-Phocus, Inc. MOS or CMOS sensor with micro-lens array
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JP2007059834A (ja) * 2005-08-26 2007-03-08 Sharp Corp 固体撮像装置およびその製造方法、電子情報機器
JP2007067194A (ja) * 2005-08-31 2007-03-15 Fujifilm Corp 有機光電変換素子、および積層型光電変換素子
JP4511442B2 (ja) * 2005-09-30 2010-07-28 富士フイルム株式会社 感度可変型撮像素子及びこれを搭載した撮像装置
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Patent Citations (4)

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JPH05291549A (ja) * 1992-04-06 1993-11-05 Ricoh Co Ltd 積層型固体撮像デバイス
JP2004179266A (ja) 2002-11-25 2004-06-24 Konica Minolta Holdings Inc 放射線画像検出器
JP2004296458A (ja) 2003-03-25 2004-10-21 Osaka Gas Co Ltd フィルタ機能付き光センサ及び火炎センサ
JP2006186118A (ja) 2004-12-28 2006-07-13 Sony Corp 固体撮像素子、固体撮像素子の製造方法および撮像装置

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KR20080084749A (ko) 2008-09-19
US7920189B2 (en) 2011-04-05
JP4637196B2 (ja) 2011-02-23
JP2008263178A (ja) 2008-10-30
US20080225142A1 (en) 2008-09-18

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