KR101406768B1 - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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Publication number
KR101406768B1
KR101406768B1 KR1020080025690A KR20080025690A KR101406768B1 KR 101406768 B1 KR101406768 B1 KR 101406768B1 KR 1020080025690 A KR1020080025690 A KR 1020080025690A KR 20080025690 A KR20080025690 A KR 20080025690A KR 101406768 B1 KR101406768 B1 KR 101406768B1
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South Korea
Prior art keywords
layer
forming
photoelectric conversion
insulating layer
conversion element
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Expired - Fee Related
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KR1020080025690A
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English (en)
Korean (ko)
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KR20080085778A (ko
Inventor
？페이 야마자키
아츠시 히로세
코지 오노
호타카 마루야마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20080085778A publication Critical patent/KR20080085778A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
  • Light Receiving Elements (AREA)
KR1020080025690A 2007-03-20 2008-03-20 반도체 장치의 제작 방법 Expired - Fee Related KR101406768B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00073186 2007-03-20
JP2007073186 2007-03-20

Publications (2)

Publication Number Publication Date
KR20080085778A KR20080085778A (ko) 2008-09-24
KR101406768B1 true KR101406768B1 (ko) 2014-06-12

Family

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Family Applications (1)

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KR1020080025690A Expired - Fee Related KR101406768B1 (ko) 2007-03-20 2008-03-20 반도체 장치의 제작 방법

Country Status (3)

Country Link
US (2) US7759629B2 (enExample)
JP (1) JP5478787B2 (enExample)
KR (1) KR101406768B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2010091482A (ja) 2008-10-09 2010-04-22 Toshiba Corp 半導体集積回路装置及びその遅延故障テスト方法
JP5581106B2 (ja) * 2009-04-27 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5700073B2 (ja) * 2013-06-13 2015-04-15 セイコーエプソン株式会社 光電変換装置、電気光学装置、電子機器
JP6545976B2 (ja) 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
US9397001B2 (en) * 2014-12-11 2016-07-19 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing electronic device comprising a resin substrate and an electronic component
JP6917700B2 (ja) 2015-12-02 2021-08-11 株式会社半導体エネルギー研究所 半導体装置
JP6981812B2 (ja) * 2016-08-31 2021-12-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102499027B1 (ko) 2016-11-03 2023-02-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163337A (ja) 2001-08-10 2003-06-06 Semiconductor Energy Lab Co Ltd 剥離方法および半導体装置の作製方法
WO2004068582A1 (ja) 2003-01-08 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. 半導体装置及びその作製方法
JP2005136392A (ja) 2003-10-06 2005-05-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR20060121728A (ko) * 2005-05-23 2006-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법

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US5306648A (en) * 1986-01-24 1994-04-26 Canon Kabushiki Kaisha Method of making photoelectric conversion device
JPS63269570A (ja) 1987-04-27 1988-11-07 Seiko Epson Corp カラ−イメ−ジセンサ
JP3268369B2 (ja) 1993-02-23 2002-03-25 株式会社河合楽器製作所 高精度板厚の圧延金属板の製造装置
JP3173750B2 (ja) * 1993-05-21 2001-06-04 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JPH11243209A (ja) * 1998-02-25 1999-09-07 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置、アクティブマトリクス基板、液晶表示装置および電子機器
JP2001343668A (ja) * 2000-05-30 2001-12-14 Toshiba Corp 表示装置用電極基板
US7024662B2 (en) * 2001-03-14 2006-04-04 Microsoft Corporation Executing dynamically assigned functions while providing services
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
WO2004040648A1 (ja) * 2002-10-30 2004-05-13 Semiconductor Energy Laboratory Co., Ltd. 半導体装置および半導体装置の作製方法
JP4408042B2 (ja) 2002-12-27 2010-02-03 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
EP1434264A3 (en) * 2002-12-27 2017-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using the transfer technique
US7495272B2 (en) * 2003-10-06 2009-02-24 Semiconductor Energy Labortaory Co., Ltd. Semiconductor device having photo sensor element and amplifier circuit
JP4939742B2 (ja) * 2003-10-28 2012-05-30 株式会社半導体エネルギー研究所 光学フィルムの作製方法
WO2007013534A1 (en) 2005-07-27 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5683059B2 (ja) * 2007-09-28 2015-03-11 富士フイルム株式会社 撮像素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163337A (ja) 2001-08-10 2003-06-06 Semiconductor Energy Lab Co Ltd 剥離方法および半導体装置の作製方法
WO2004068582A1 (ja) 2003-01-08 2004-08-12 Semiconductor Energy Laboratory Co., Ltd. 半導体装置及びその作製方法
JP2005136392A (ja) 2003-10-06 2005-05-26 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR20060121728A (ko) * 2005-05-23 2006-11-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법

Also Published As

Publication number Publication date
US20080230682A1 (en) 2008-09-25
US20100282947A1 (en) 2010-11-11
US7759629B2 (en) 2010-07-20
JP5478787B2 (ja) 2014-04-23
JP2008263182A (ja) 2008-10-30
KR20080085778A (ko) 2008-09-24
US8035077B2 (en) 2011-10-11

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