KR101380136B1 - 반도체 장치의 제작방법 - Google Patents

반도체 장치의 제작방법 Download PDF

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Publication number
KR101380136B1
KR101380136B1 KR1020070113272A KR20070113272A KR101380136B1 KR 101380136 B1 KR101380136 B1 KR 101380136B1 KR 1020070113272 A KR1020070113272 A KR 1020070113272A KR 20070113272 A KR20070113272 A KR 20070113272A KR 101380136 B1 KR101380136 B1 KR 101380136B1
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South Korea
Prior art keywords
film
laser beam
less
semiconductor film
insulating film
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Expired - Fee Related
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KR1020070113272A
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English (en)
Korean (ko)
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KR20080041596A (ko
Inventor
아키히사 시모무라
히데카주 미야이리
야수히로 진보
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20080041596A publication Critical patent/KR20080041596A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020070113272A 2006-11-07 2007-11-07 반도체 장치의 제작방법 Expired - Fee Related KR101380136B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00301810 2006-11-07
JP2006301810 2006-11-07

Publications (2)

Publication Number Publication Date
KR20080041596A KR20080041596A (ko) 2008-05-13
KR101380136B1 true KR101380136B1 (ko) 2014-04-01

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Country Status (5)

Country Link
US (3) US7811911B2 (https=)
EP (1) EP1921667B1 (https=)
JP (1) JP5252877B2 (https=)
KR (1) KR101380136B1 (https=)
CN (1) CN101179012B (https=)

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US7615502B2 (en) * 2005-12-16 2009-11-10 Sandisk 3D Llc Laser anneal of vertically oriented semiconductor structures while maintaining a dopant profile
US20090193676A1 (en) * 2008-01-31 2009-08-06 Guo Shengguang Shoe Drying Apparatus
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KR20100043011A (ko) * 2008-10-17 2010-04-27 세이코 엡슨 가부시키가이샤 유기 ｅｌ 장치, 유기 ｅｌ 장치의 제조 방법, 전자 기기
US8802580B2 (en) * 2008-11-14 2014-08-12 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
JP5821634B2 (ja) * 2009-03-27 2015-11-24 旭硝子株式会社 ハードコート剤組成物およびハードコート層を有する樹脂基板
EP2239084A1 (en) * 2009-04-07 2010-10-13 Excico France Method of and apparatus for irradiating a semiconductor material surface by laser energy
CN102049611B (zh) * 2009-10-30 2013-11-06 技鼎股份有限公司 应用于脆性材料的镭射加工装置及镭射加工和位移补偿的方法
WO2011071717A2 (en) * 2009-12-11 2011-06-16 National Semiconductor Corporation Backside stress compensation for gallium nitride or other nitride-based semiconductor devices
CN103081065B (zh) * 2010-08-31 2016-04-27 株式会社日本制钢所 激光退火装置及激光退火方法
US9755085B2 (en) 2011-07-08 2017-09-05 SK Hynix Inc. Semiconductor device and method of manufacturing the same
JP2014006049A (ja) * 2012-06-21 2014-01-16 Sumitomo Bakelite Co Ltd マイクロ流路チップの製造方法
DE102012217633A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren und Vorrichtung zur Überprüfung eines optoelektronischen Bauteils auf Risse
US9209298B2 (en) * 2013-03-08 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-oxide-semiconductor field-effect transistor with extended gate dielectric layer
JP6727762B2 (ja) * 2014-05-30 2020-07-22 株式会社半導体エネルギー研究所 発光装置及び電子機器
TWI699023B (zh) 2014-06-30 2020-07-11 日商半導體能源研究所股份有限公司 發光裝置，模組，及電子裝置
KR20170037633A (ko) * 2014-07-21 2017-04-04 어플라이드 머티어리얼스, 인코포레이티드 스캐닝형 펄스 어닐링 장치 및 방법
US10424672B2 (en) 2016-02-19 2019-09-24 Silicon Display Technology Oxide semiconductor transistor
WO2017159613A1 (ja) * 2016-03-15 2017-09-21 シャープ株式会社 アクティブマトリクス基板
KR101872421B1 (ko) * 2016-04-12 2018-06-28 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법
US10170419B2 (en) 2016-06-22 2019-01-01 International Business Machines Corporation Biconvex low resistance metal wire
CN110165017B (zh) * 2019-04-18 2021-08-24 中国科学院宁波材料技术与工程研究所 制备隧穿氧钝化接触结构的快速退火方法
KR102170175B1 (ko) * 2019-06-26 2020-10-27 인하공업전문대학산학협력단 플렉시블 디스플레이 장치 제조를 위한 가접합 캐리어 글래스-금속 호일 접합체의 제조방법
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KR102796256B1 (ko) * 2020-08-03 2025-04-17 삼성디스플레이 주식회사 표시 장치의 제조장치 및 제조방법
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Also Published As

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US20080108206A1 (en) 2008-05-08
JP5252877B2 (ja) 2013-07-31
CN101179012B (zh) 2011-10-05
KR20080041596A (ko) 2008-05-13
JP2008141179A (ja) 2008-06-19
US8017508B2 (en) 2011-09-13
EP1921667B1 (en) 2017-05-03
CN101179012A (zh) 2008-05-14
EP1921667A2 (en) 2008-05-14
US8242002B2 (en) 2012-08-14
US20110312165A1 (en) 2011-12-22
US7811911B2 (en) 2010-10-12
EP1921667A3 (en) 2011-05-04
US20110014780A1 (en) 2011-01-20

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