KR101365336B1 - 간접 밴드갭 반도체 구조 검사 방법 및 시스템 - Google Patents

간접 밴드갭 반도체 구조 검사 방법 및 시스템 Download PDF

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KR101365336B1
KR101365336B1 KR1020087011175A KR20087011175A KR101365336B1 KR 101365336 B1 KR101365336 B1 KR 101365336B1 KR 1020087011175 A KR1020087011175 A KR 1020087011175A KR 20087011175 A KR20087011175 A KR 20087011175A KR 101365336 B1 KR101365336 B1 KR 101365336B1
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South Korea
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image
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photoluminescence
capturing
light
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Expired - Fee Related
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KR1020087011175A
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English (en)
Korean (ko)
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KR20080089566A (ko
Inventor
토르스텐 트룹케
로버트 앤드류 바도스
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비티 이미징 피티와이 리미티드
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Priority claimed from AU2005905598A external-priority patent/AU2005905598A0/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6456—Spatial resolved fluorescence measurements; Imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Photovoltaic Devices (AREA)
KR1020087011175A 2005-10-11 2006-10-11 간접 밴드갭 반도체 구조 검사 방법 및 시스템 Expired - Fee Related KR101365336B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
AU2005905598A AU2005905598A0 (en) 2005-10-11 Method and system for inspecting indirect bandgap semiconductor structure
AU2005905598 2005-10-11
PCT/AU2006/001420 WO2007041758A1 (en) 2005-10-11 2006-10-11 Method and system for inspecting indirect bandgap semiconductor structure

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137001369A Division KR101365363B1 (ko) 2005-10-11 2006-10-11 간접 밴드갭 반도체 구조 검사 방법 및 시스템

Publications (2)

Publication Number Publication Date
KR20080089566A KR20080089566A (ko) 2008-10-07
KR101365336B1 true KR101365336B1 (ko) 2014-02-19

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ID=37942196

Family Applications (2)

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KR1020087011175A Expired - Fee Related KR101365336B1 (ko) 2005-10-11 2006-10-11 간접 밴드갭 반도체 구조 검사 방법 및 시스템
KR1020137001369A Active KR101365363B1 (ko) 2005-10-11 2006-10-11 간접 밴드갭 반도체 구조 검사 방법 및 시스템

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Country Status (13)

Country Link
US (4) US8064054B2 (enExample)
EP (1) EP1946079B2 (enExample)
JP (3) JP2009512198A (enExample)
KR (2) KR101365336B1 (enExample)
CN (3) CN104568870B (enExample)
AU (1) AU2006301905A1 (enExample)
DK (1) DK1946079T3 (enExample)
ES (1) ES2659781T3 (enExample)
HU (1) HUE036690T2 (enExample)
MY (1) MY157737A (enExample)
PH (1) PH12015500265B1 (enExample)
TR (1) TR201802704T4 (enExample)
WO (1) WO2007041758A1 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TR201802704T4 (tr) * 2005-10-11 2018-03-21 Bt Imaging Pty Ltd Dolaylı bant aralığı yarı iletken yapısının denetlenmesi için metot ve sistem.
WO2009026661A1 (en) * 2007-08-30 2009-03-05 Bt Imaging Pty Ltd Photovoltaic cell manufacturing
JP5489107B2 (ja) * 2008-02-22 2014-05-14 フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー．ファオ． 半導体部品の特性評価のための測定方法及び装置
JP2011516374A (ja) * 2008-03-31 2011-05-26 ビーティー イメージング ピーティーワイ リミテッド ウエハ画像化と処理の方法及び装置
US20110117681A1 (en) * 2008-07-09 2011-05-19 Bt Imaging Pty Ltd Thin film imaging method and apparatus
SG158787A1 (en) 2008-07-28 2010-02-26 Chan Sok Leng Apparatus for detecting micro-cracks in wafers and method therefor
SG158782A1 (en) 2008-07-28 2010-02-26 Chan Sok Leng Method and system for detecting micro-cracks in wafers
US8742372B2 (en) 2009-07-20 2014-06-03 Bt Imaging Pty Ltd Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials
EP2284520A1 (en) 2009-07-28 2011-02-16 David Marcos Muntal Assembly for the inspection in a continuous manner of cells, strings and photovoltaic modules and inspection method thereof
JP5271185B2 (ja) * 2009-07-28 2013-08-21 株式会社アイテス 太陽光発電素子の検査装置
CN102575986A (zh) * 2009-08-14 2012-07-11 Bt成像股份有限公司 用于硅光伏电池生产的光致发光成像系统
TW201140039A (en) 2010-01-04 2011-11-16 Bt Imaging Pty Ltd Improved illumination systems and methods for photoluminescence imaging of photovoltaic cells and wafers
CN102156106A (zh) * 2010-02-11 2011-08-17 致茂电子(苏州)有限公司 太阳能晶圆快速检测系统
CN102859338A (zh) * 2010-03-29 2013-01-02 因特瓦克公司 时间分辨光致发光成像系统和光伏电池检验的方法
WO2011153410A1 (en) * 2010-06-04 2011-12-08 Hemlock Semiconductor Corporation A method for measuring bulk impurities of semiconductor materials using edge - on photoluminescence
US8629411B2 (en) 2010-07-13 2014-01-14 First Solar, Inc. Photoluminescence spectroscopy
MY186210A (en) 2010-07-23 2021-06-30 First Solar Inc In-line metrology system and method
WO2012016233A1 (en) * 2010-07-30 2012-02-02 First Solar, Inc. Photoluminescence measurement tool and associated method
US8934705B2 (en) 2010-08-09 2015-01-13 Bt Imaging Pty Ltd Persistent feature detection
CN101988904A (zh) * 2010-10-15 2011-03-23 中国电子科技集团公司第十八研究所 太阳能电池缺陷检测方法
DE102011002960B3 (de) * 2011-01-21 2012-04-26 Osram Ag Solarsimulator und Verfahren zum Betreiben eines Solarsimulators
KR20120113019A (ko) * 2011-04-04 2012-10-12 삼성전기주식회사 태양전지 셀 검사 방법 및 장치
JP5694042B2 (ja) * 2011-04-28 2015-04-01 三洋電機株式会社 太陽電池モジュールの評価方法及び太陽電池モジュールの製造方法
US9863890B2 (en) * 2011-06-10 2018-01-09 The Boeing Company Solar cell testing apparatus and method
ITUD20110115A1 (it) * 2011-07-19 2013-01-20 Applied Materials Italia Srl Dispositivo per la simulazione della radiazione solare e procedimento di test che utilizza tale dispositivo
US8604447B2 (en) 2011-07-27 2013-12-10 Kla-Tencor Corporation Solar metrology methods and apparatus
CN103874918A (zh) * 2011-08-12 2014-06-18 Bt成像股份有限公司 半导体晶片中掺杂变化的光致发光成像
JP5848583B2 (ja) * 2011-11-02 2016-01-27 浜松ホトニクス株式会社 太陽電池関連試料測定システム
NL2007941C2 (en) * 2011-12-09 2013-06-11 Stichting Energie Qualification of silicon wafers for photo-voltaic cells by optical imaging.
CN102608510B (zh) * 2012-01-19 2014-03-26 上海交通大学 晶体硅太阳电池少子寿命的快速测定方法
WO2014005185A1 (en) 2012-07-06 2014-01-09 Bt Imaging Pty Ltd Methods for inspecting semiconductor wafers
KR101256810B1 (ko) * 2012-07-06 2013-04-23 주식회사 한국테크놀로지 Ｅｌ 기법을 이용한 태양전지 검사장치 및 방법
KR102068741B1 (ko) 2013-06-04 2020-01-22 삼성디스플레이 주식회사 다결정 규소막의 검사 방법
US9685906B2 (en) 2013-07-03 2017-06-20 Semilab SDI LLC Photoluminescence mapping of passivation defects for silicon photovoltaics
DE102013112885A1 (de) * 2013-11-21 2015-05-21 Osram Opto Semiconductors Gmbh Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens
US9754365B2 (en) * 2014-02-21 2017-09-05 Applied Materials, Inc. Wafer inspection method and software
CN104201127B (zh) * 2014-08-22 2017-01-18 西安炬光科技有限公司 一种半导体激光器阵列连接界面表征方法及装置
US10012593B2 (en) 2015-05-04 2018-07-03 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging
US10883941B2 (en) * 2015-05-04 2021-01-05 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging
US10018565B2 (en) * 2015-05-04 2018-07-10 Semilab Semiconductor Physics Laboratory Co., Ltd. Micro photoluminescence imaging with optical filtering
JP6520782B2 (ja) * 2016-03-18 2019-05-29 信越半導体株式会社 エピタキシャルウェーハの評価方法及び製造方法
CN107091822B (zh) * 2017-03-14 2019-09-10 华东师范大学 双光源激发光致发光检测半导体缺陷的装置及其检测方法
JP6411683B1 (ja) * 2017-10-16 2018-10-24 株式会社デンケン 太陽電池検査装置及びカメラ付きソーラーシミュレータ
US11614406B2 (en) * 2018-04-30 2023-03-28 The Southern Company Systems and methods for inspecting solar modules using high-power light sources
CN109100305B (zh) * 2018-07-13 2022-02-18 陕西师范大学 一种液体分散系的数字化物质信息获取装置及方法
US11474144B2 (en) 2018-12-21 2022-10-18 Industrial Technology Research Institute Method for inspecting light-emitting diodes and inspection apparatus
DE102019121807A1 (de) 2019-08-13 2021-02-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Analyse einer Mehrfachsolarzelle mit zumindest zwei Sub-Solarzellen mittels Lumineszenzstrahlung
CZ2020345A3 (cs) * 2020-06-15 2021-12-15 Fyzikální Ústav Av Čr, V. V. I. Způsob a zařízení pro měření tloušťky tenkých vrstev i na hrubých podložkách
TWI759866B (zh) * 2020-06-19 2022-04-01 財團法人工業技術研究院 發光二極體的檢測裝置及其檢測方法
WO2022055657A1 (en) * 2020-09-08 2022-03-17 Massachusetts Institute Of Technology Automated optical measurement system to determine semiconductor properties
KR102757103B1 (ko) * 2022-05-23 2025-01-21 (주) 오로스테크놀로지 스펙클 노이즈가 저감된 레이저 조명 시스템
CN116386773A (zh) * 2023-03-02 2023-07-04 南京航空航天大学 一种基于图神经网络的Si-Ge晶体直接带隙预测网络结构
US12461299B2 (en) 2023-11-02 2025-11-04 Orbotech Ltd. LED and laser diode combined illumination system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218163A (ja) * 1991-12-11 1993-08-27 Hitachi Ltd 異物検査方法及びその装置
JPH0835934A (ja) * 1994-07-25 1996-02-06 Kobe Steel Ltd 試料の内部欠陥評価装置
JP2001500613A (ja) * 1996-09-10 2001-01-16 バイオ―ラド マイクロメジャーメント リミテッド 半導体のミクロ欠陥検出装置とその方法

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148076U (ja) 1984-08-31 1986-03-31 株式会社トーキン コイル塗装用治具
US4661770A (en) 1984-12-18 1987-04-28 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method and apparatus for measuring minority carrier lifetime in a direct band-gap semiconductor
US4652757A (en) 1985-08-02 1987-03-24 At&T Technologies, Inc. Method and apparatus for optically determining defects in a semiconductor material
JPS62115346A (ja) † 1985-11-14 1987-05-27 Fujitsu Ltd 半導体結晶中の不純物濃度の測定方法、および装置
US4713140A (en) 1987-03-02 1987-12-15 International Business Machines Corporation Laser luminescence monitor for material thickness
JPH01182738A (ja) 1988-01-13 1989-07-20 Sumitomo Electric Ind Ltd 化合物半導体結晶の不純物測定方法
JP2983022B2 (ja) * 1988-07-20 1999-11-29 浜松ホトニクス株式会社 発光によるデバイスおよびその材料の評価装置
EP0416787B1 (en) 1989-09-01 1995-05-10 AT&T Corp. Plasma processing of III-V semiconductors, controlled by photoluminescence spectroscopy
GB9014263D0 (en) 1990-06-27 1990-08-15 Dixon Arthur E Apparatus and method for spatially- and spectrally- resolvedmeasurements
JPH04339247A (ja) * 1991-02-06 1992-11-26 Nec Corp 太陽電池傷自動検出装置
US5463459A (en) 1991-04-02 1995-10-31 Hitachi, Ltd. Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process
JPH0727945B2 (ja) 1991-09-26 1995-03-29 信越半導体株式会社 半導体結晶中の深い準位密度分布の評価方法
JP2975476B2 (ja) * 1992-03-30 1999-11-10 三井金属鉱業株式会社 結晶内のフォトルミネッセンス計測方法及び装置
JP2711966B2 (ja) * 1992-09-10 1998-02-10 信越半導体株式会社 発光素子製造用ウエーハの検査方法
US5388909A (en) * 1993-09-16 1995-02-14 Johnson; Shane R. Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap
JP3244100B2 (ja) * 1994-08-17 2002-01-07 横河電機株式会社 ２光子励起顕微鏡
US5892234A (en) † 1995-09-22 1999-04-06 The Board Of Regents Of Oklahoma State University Method for determining an unknown absorbed dose of radiation using optically stimulated luminescence
US5962857A (en) 1995-09-22 1999-10-05 The Board Of Regents For Oklahoma State University Method for the fast determination of an unknown absorbed dose of radiation with high sensitivity using optically stimulated luminescence
GB2306640B (en) 1995-10-17 1998-01-14 Toshiba Cambridge Res Center Method of characterising a semiconductor material
JP3670745B2 (ja) 1996-02-20 2005-07-13 オリンパス株式会社 共焦点顕微鏡
JPH10270514A (ja) † 1997-03-26 1998-10-09 Sumitomo Metal Ind Ltd 半導体ウエハの評価方法及びその装置
US5969805A (en) * 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
US6494852B1 (en) 1998-03-11 2002-12-17 Medical Compression Systems (Dbn) Ltd. Portable ambulant pneumatic compression system
RU2255326C2 (ru) * 1998-07-10 2005-06-27 Ятроквест Корпорэйшн Фотолюминесцентные полупроводниковые материалы
US6429968B1 (en) 2000-03-09 2002-08-06 Agere Systems Guardian Corp Apparatus for photoluminescence microscopy and spectroscopy
US6534774B2 (en) * 2000-09-08 2003-03-18 Mitsubishi Materials Silicon Corporation Method and apparatus for evaluating the quality of a semiconductor substrate
JP2002107301A (ja) * 2000-10-03 2002-04-10 Univ Osaka コヒーレントアンチストークスラマン散乱顕微鏡
US6911347B2 (en) 2000-10-06 2005-06-28 Aoti Operating Company, Inc. Method to detect surface metal contamination
AU2002220701A1 (en) * 2000-11-14 2002-05-27 Stephan Ia Barre Method and device for measuring properties of a sample
US6809809B2 (en) * 2000-11-15 2004-10-26 Real Time Metrology, Inc. Optical method and apparatus for inspecting large area planar objects
US6791099B2 (en) * 2001-02-14 2004-09-14 Applied Materials, Inc. Laser scanning wafer inspection using nonlinear optical phenomena
GB0107618D0 (en) * 2001-03-27 2001-05-16 Aoti Operating Co Inc Detection and classification of micro-defects in semi-conductors
JP2002350732A (ja) 2001-05-25 2002-12-04 Nikon Corp 蛍光観察装置
JP4554112B2 (ja) 2001-06-21 2010-09-29 三井造船株式会社 二次元微弱放射検出装置
JP2003028797A (ja) * 2001-07-11 2003-01-29 Hitachi Software Eng Co Ltd 蛍光読み取り装置
GB2379317A (en) * 2001-08-30 2003-03-05 Cambridge Display Tech Ltd Optoelectronic display operating by photoluminescence quenching
KR20030037314A (ko) * 2001-11-01 2003-05-14 (주)다이아칩 바이오 칩 분석을 위한 형광 영상 분석장치
US7042570B2 (en) * 2002-01-25 2006-05-09 The Regents Of The University Of California Porous thin film time-varying reflectivity analysis of samples
US6859326B2 (en) 2002-09-20 2005-02-22 Corning Incorporated Random microlens array for optical beam shaping and homogenization
JP4529366B2 (ja) * 2003-03-26 2010-08-25 株式会社ニコン 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
JP3917154B2 (ja) 2004-11-19 2007-05-23 独立行政法人 宇宙航空研究開発機構 半導体試料の欠陥評価方法及び装置
JP4862368B2 (ja) 2004-11-29 2012-01-25 株式会社ニコン ズーム顕微鏡
US20070000434A1 (en) 2005-06-30 2007-01-04 Accent Optical Technologies, Inc. Apparatuses and methods for detecting defects in semiconductor workpieces
TWI391645B (zh) 2005-07-06 2013-04-01 Nanometrics Inc 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光
TWI439684B (zh) * 2005-07-06 2014-06-01 Nanometrics Inc 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像
DE102005040010A1 (de) 2005-08-23 2007-03-15 Rwe Schott Solar Gmbh Verfahren und Vorrichtung zur Ermittlung von Produktionsfehlern in einem Halbleiterbau-element
TR201802704T4 (tr) * 2005-10-11 2018-03-21 Bt Imaging Pty Ltd Dolaylı bant aralığı yarı iletken yapısının denetlenmesi için metot ve sistem.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05218163A (ja) * 1991-12-11 1993-08-27 Hitachi Ltd 異物検査方法及びその装置
JPH0835934A (ja) * 1994-07-25 1996-02-06 Kobe Steel Ltd 試料の内部欠陥評価装置
JP2001500613A (ja) * 1996-09-10 2001-01-16 バイオ―ラド マイクロメジャーメント リミテッド 半導体のミクロ欠陥検出装置とその方法

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US8218140B2 (en) 2012-07-10
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