ES2659781T3 - Método y sistema para inspeccionar una estructura semiconductora de salto de banda indirecto - Google Patents
Método y sistema para inspeccionar una estructura semiconductora de salto de banda indirecto Download PDFInfo
- Publication number
- ES2659781T3 ES2659781T3 ES06790291.6T ES06790291T ES2659781T3 ES 2659781 T3 ES2659781 T3 ES 2659781T3 ES 06790291 T ES06790291 T ES 06790291T ES 2659781 T3 ES2659781 T3 ES 2659781T3
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- Spain
- Prior art keywords
- indirect band
- photoluminescence
- light
- semiconductor structure
- band jump
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005424 photoluminescence Methods 0.000 claims abstract description 88
- 238000005286 illumination Methods 0.000 claims abstract description 11
- 230000001939 inductive effect Effects 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 91
- 239000010703 silicon Substances 0.000 claims description 75
- 229910052710 silicon Inorganic materials 0.000 claims description 74
- 235000012431 wafers Nutrition 0.000 claims description 47
- 238000003384 imaging method Methods 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000969 carrier Substances 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 230000009191 jumping Effects 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000001914 filtration Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000012512 characterization method Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
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- 230000005284 excitation Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001454 recorded image Methods 0.000 description 2
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- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6456—Spatial resolved fluorescence measurements; Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Signal Processing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2005905598A AU2005905598A0 (en) | 2005-10-11 | Method and system for inspecting indirect bandgap semiconductor structure | |
| AU2005905598 | 2005-10-11 | ||
| PCT/AU2006/001420 WO2007041758A1 (en) | 2005-10-11 | 2006-10-11 | Method and system for inspecting indirect bandgap semiconductor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2659781T3 true ES2659781T3 (es) | 2018-03-19 |
Family
ID=37942196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES06790291.6T Active ES2659781T3 (es) | 2005-10-11 | 2006-10-11 | Método y sistema para inspeccionar una estructura semiconductora de salto de banda indirecto |
Country Status (13)
| Country | Link |
|---|---|
| US (4) | US8064054B2 (enExample) |
| EP (1) | EP1946079B2 (enExample) |
| JP (3) | JP2009512198A (enExample) |
| KR (2) | KR101365363B1 (enExample) |
| CN (3) | CN104569779B (enExample) |
| AU (1) | AU2006301905A1 (enExample) |
| DK (1) | DK1946079T3 (enExample) |
| ES (1) | ES2659781T3 (enExample) |
| HU (1) | HUE036690T2 (enExample) |
| MY (1) | MY157737A (enExample) |
| PH (1) | PH12015500265B1 (enExample) |
| TR (1) | TR201802704T4 (enExample) |
| WO (1) | WO2007041758A1 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DK1946079T3 (en) * | 2005-10-11 | 2018-03-12 | Bt Imaging Pty Ltd | PROCEDURE AND SYSTEM FOR INSPECTING INDIRECT BANDWOOD SEMICONDUCTOR STRUCTURE |
| WO2009026661A1 (en) * | 2007-08-30 | 2009-03-05 | Bt Imaging Pty Ltd | Photovoltaic cell manufacturing |
| US8829938B2 (en) | 2008-02-22 | 2014-09-09 | Fraunhofer-Gesellschaft zur Föderung der angewandten Forschung e.V. | Measuring method and device for characterizing a semiconductor component |
| WO2009121133A1 (en) * | 2008-03-31 | 2009-10-08 | Bt Imaging Pty Ltd | Wafer imaging and processing method and apparatus |
| US20110117681A1 (en) * | 2008-07-09 | 2011-05-19 | Bt Imaging Pty Ltd | Thin film imaging method and apparatus |
| SG158787A1 (en) | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Apparatus for detecting micro-cracks in wafers and method therefor |
| SG158782A1 (en) | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Method and system for detecting micro-cracks in wafers |
| CN104020148B (zh) | 2009-07-20 | 2017-04-12 | Bt成像股份有限公司 | 光致发光测量中掺杂浓度和少数载流子寿命分离 |
| EP2284520A1 (en) | 2009-07-28 | 2011-02-16 | David Marcos Muntal | Assembly for the inspection in a continuous manner of cells, strings and photovoltaic modules and inspection method thereof |
| JP5271185B2 (ja) * | 2009-07-28 | 2013-08-21 | 株式会社アイテス | 太陽光発電素子の検査装置 |
| WO2011017775A1 (en) * | 2009-08-14 | 2011-02-17 | Bt Imaging Pty Ltd | Photoluminescence imaging systems for silicon photovoltaic cell manufacturing |
| US20130062536A1 (en) * | 2010-01-04 | 2013-03-14 | BT Imaging Pty. Ltd. | Illumination Systems and Methods for Photoluminescence Imaging of Photovoltaic Cells and Wafers |
| CN102156106A (zh) * | 2010-02-11 | 2011-08-17 | 致茂电子(苏州)有限公司 | 太阳能晶圆快速检测系统 |
| US20110234790A1 (en) * | 2010-03-29 | 2011-09-29 | Bruce True | Time resolved photoluminescence imaging systems and methods for photovoltaic cell inspection |
| US9261464B2 (en) | 2010-06-04 | 2016-02-16 | Hemlock Semiconductor Corporation | Applying edge-on photoluminescence to measure bulk impurities of semiconductor materials |
| US8629411B2 (en) | 2010-07-13 | 2014-01-14 | First Solar, Inc. | Photoluminescence spectroscopy |
| WO2012012795A1 (en) | 2010-07-23 | 2012-01-26 | First Solar, Inc | In-line metrology system and method |
| US9209096B2 (en) | 2010-07-30 | 2015-12-08 | First Solar, Inc | Photoluminescence measurement |
| WO2012019219A1 (en) | 2010-08-09 | 2012-02-16 | Bt Imaging Pty Ltd | Persistent feature detection |
| CN101988904A (zh) * | 2010-10-15 | 2011-03-23 | 中国电子科技集团公司第十八研究所 | 太阳能电池缺陷检测方法 |
| DE102011002960B3 (de) * | 2011-01-21 | 2012-04-26 | Osram Ag | Solarsimulator und Verfahren zum Betreiben eines Solarsimulators |
| KR20120113019A (ko) * | 2011-04-04 | 2012-10-12 | 삼성전기주식회사 | 태양전지 셀 검사 방법 및 장치 |
| JP5694042B2 (ja) * | 2011-04-28 | 2015-04-01 | 三洋電機株式会社 | 太陽電池モジュールの評価方法及び太陽電池モジュールの製造方法 |
| US9863890B2 (en) * | 2011-06-10 | 2018-01-09 | The Boeing Company | Solar cell testing apparatus and method |
| ITUD20110115A1 (it) * | 2011-07-19 | 2013-01-20 | Applied Materials Italia Srl | Dispositivo per la simulazione della radiazione solare e procedimento di test che utilizza tale dispositivo |
| US8604447B2 (en) | 2011-07-27 | 2013-12-10 | Kla-Tencor Corporation | Solar metrology methods and apparatus |
| US20140212020A1 (en) * | 2011-08-12 | 2014-07-31 | Bt Imaging Pty Ltd | Photoluminescence imaging of doping variations in semiconductor wafers |
| JP5848583B2 (ja) * | 2011-11-02 | 2016-01-27 | 浜松ホトニクス株式会社 | 太陽電池関連試料測定システム |
| NL2007941C2 (en) * | 2011-12-09 | 2013-06-11 | Stichting Energie | Qualification of silicon wafers for photo-voltaic cells by optical imaging. |
| CN102608510B (zh) * | 2012-01-19 | 2014-03-26 | 上海交通大学 | 晶体硅太阳电池少子寿命的快速测定方法 |
| WO2014005185A1 (en) | 2012-07-06 | 2014-01-09 | Bt Imaging Pty Ltd | Methods for inspecting semiconductor wafers |
| KR101256810B1 (ko) * | 2012-07-06 | 2013-04-23 | 주식회사 한국테크놀로지 | Ｅｌ 기법을 이용한 태양전지 검사장치 및 방법 |
| KR102068741B1 (ko) | 2013-06-04 | 2020-01-22 | 삼성디스플레이 주식회사 | 다결정 규소막의 검사 방법 |
| US9685906B2 (en) | 2013-07-03 | 2017-06-20 | Semilab SDI LLC | Photoluminescence mapping of passivation defects for silicon photovoltaics |
| DE102013112885A1 (de) * | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens |
| US9754365B2 (en) * | 2014-02-21 | 2017-09-05 | Applied Materials, Inc. | Wafer inspection method and software |
| CN104201127B (zh) * | 2014-08-22 | 2017-01-18 | 西安炬光科技有限公司 | 一种半导体激光器阵列连接界面表征方法及装置 |
| US10883941B2 (en) | 2015-05-04 | 2021-01-05 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging |
| US10018565B2 (en) * | 2015-05-04 | 2018-07-10 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging with optical filtering |
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| JP6520782B2 (ja) * | 2016-03-18 | 2019-05-29 | 信越半導体株式会社 | エピタキシャルウェーハの評価方法及び製造方法 |
| CN107091822B (zh) * | 2017-03-14 | 2019-09-10 | 华东师范大学 | 双光源激发光致发光检测半导体缺陷的装置及其检测方法 |
| JP6411683B1 (ja) * | 2017-10-16 | 2018-10-24 | 株式会社デンケン | 太陽電池検査装置及びカメラ付きソーラーシミュレータ |
| US11614406B2 (en) * | 2018-04-30 | 2023-03-28 | The Southern Company | Systems and methods for inspecting solar modules using high-power light sources |
| CN109100305B (zh) * | 2018-07-13 | 2022-02-18 | 陕西师范大学 | 一种液体分散系的数字化物质信息获取装置及方法 |
| US11474144B2 (en) | 2018-12-21 | 2022-10-18 | Industrial Technology Research Institute | Method for inspecting light-emitting diodes and inspection apparatus |
| DE102019121807A1 (de) | 2019-08-13 | 2021-02-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Analyse einer Mehrfachsolarzelle mit zumindest zwei Sub-Solarzellen mittels Lumineszenzstrahlung |
| CZ309036B6 (cs) * | 2020-06-15 | 2021-12-15 | Fyzikální Ústav Av Čr, V. V. I. | Způsob a zařízení pro měření tloušťky tenkých vrstev i na hrubých podložkách |
| TWI759866B (zh) * | 2020-06-19 | 2022-04-01 | 財團法人工業技術研究院 | 發光二極體的檢測裝置及其檢測方法 |
| EP4211726A4 (en) * | 2020-09-08 | 2024-11-27 | Massachusetts Institute Of Technology | PREDICTION OF SEMICONDUCTOR DEVICE PERFORMANCE |
| KR102757103B1 (ko) * | 2022-05-23 | 2025-01-21 | (주) 오로스테크놀로지 | 스펙클 노이즈가 저감된 레이저 조명 시스템 |
| CN116386773A (zh) * | 2023-03-02 | 2023-07-04 | 南京航空航天大学 | 一种基于图神经网络的Si-Ge晶体直接带隙预测网络结构 |
| US12461299B2 (en) | 2023-11-02 | 2025-11-04 | Orbotech Ltd. | LED and laser diode combined illumination system |
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| EP0416787B1 (en) | 1989-09-01 | 1995-05-10 | AT&T Corp. | Plasma processing of III-V semiconductors, controlled by photoluminescence spectroscopy |
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| JPH0835934A (ja) * | 1994-07-25 | 1996-02-06 | Kobe Steel Ltd | 試料の内部欠陥評価装置 |
| JP3244100B2 (ja) * | 1994-08-17 | 2002-01-07 | 横河電機株式会社 | ２光子励起顕微鏡 |
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