CN104569779B - 用于检查带隙半导体结构的方法和系统 - Google Patents
用于检查带隙半导体结构的方法和系统 Download PDFInfo
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- CN104569779B CN104569779B CN201410770971.4A CN201410770971A CN104569779B CN 104569779 B CN104569779 B CN 104569779B CN 201410770971 A CN201410770971 A CN 201410770971A CN 104569779 B CN104569779 B CN 104569779B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004020 luminiscence type Methods 0.000 claims abstract description 76
- 230000001960 triggered effect Effects 0.000 claims abstract description 23
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 115
- 229910052710 silicon Inorganic materials 0.000 claims description 81
- 239000010703 silicon Substances 0.000 claims description 81
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- 238000005424 photoluminescence Methods 0.000 abstract description 12
- 230000007547 defect Effects 0.000 description 15
- 238000012360 testing method Methods 0.000 description 14
- 238000001914 filtration Methods 0.000 description 10
- 238000001228 spectrum Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
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- 239000000571 coke Substances 0.000 description 2
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- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6456—Spatial resolved fluorescence measurements; Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Pathology (AREA)
- Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Immunology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Signal Processing (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2005905598A AU2005905598A0 (en) | 2005-10-11 | Method and system for inspecting indirect bandgap semiconductor structure | |
| AU2005905598 | 2005-10-11 | ||
| CN200680046029.7A CN101365937B (zh) | 2005-10-11 | 2006-10-11 | 用于检查带隙半导体结构的方法和系统 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680046029.7A Division CN101365937B (zh) | 2005-10-11 | 2006-10-11 | 用于检查带隙半导体结构的方法和系统 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104569779A CN104569779A (zh) | 2015-04-29 |
| CN104569779B true CN104569779B (zh) | 2018-05-18 |
Family
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410770974.8A Active CN104568870B (zh) | 2005-10-11 | 2006-10-11 | 用于检查带隙半导体结构的方法和系统 |
| CN201410770971.4A Active CN104569779B (zh) | 2005-10-11 | 2006-10-11 | 用于检查带隙半导体结构的方法和系统 |
| CN200680046029.7A Expired - Fee Related CN101365937B (zh) | 2005-10-11 | 2006-10-11 | 用于检查带隙半导体结构的方法和系统 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410770974.8A Active CN104568870B (zh) | 2005-10-11 | 2006-10-11 | 用于检查带隙半导体结构的方法和系统 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200680046029.7A Expired - Fee Related CN101365937B (zh) | 2005-10-11 | 2006-10-11 | 用于检查带隙半导体结构的方法和系统 |
Country Status (13)
| Country | Link |
|---|---|
| US (4) | US8064054B2 (enExample) |
| EP (1) | EP1946079B2 (enExample) |
| JP (3) | JP2009512198A (enExample) |
| KR (2) | KR101365336B1 (enExample) |
| CN (3) | CN104568870B (enExample) |
| AU (1) | AU2006301905A1 (enExample) |
| DK (1) | DK1946079T3 (enExample) |
| ES (1) | ES2659781T3 (enExample) |
| HU (1) | HUE036690T2 (enExample) |
| MY (1) | MY157737A (enExample) |
| PH (1) | PH12015500265B1 (enExample) |
| TR (1) | TR201802704T4 (enExample) |
| WO (1) | WO2007041758A1 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| HUE036690T2 (hu) * | 2005-10-11 | 2018-07-30 | Bt Imaging Pty Ltd | Eljárás és rendszer közvetett sávhézag (bandgap) félvezetõ szerkezet felügyeletére |
| WO2009026661A1 (en) * | 2007-08-30 | 2009-03-05 | Bt Imaging Pty Ltd | Photovoltaic cell manufacturing |
| JP5489107B2 (ja) * | 2008-02-22 | 2014-05-14 | フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー．ファオ． | 半導体部品の特性評価のための測定方法及び装置 |
| CN102017191B (zh) | 2008-03-31 | 2014-05-28 | Bt成像股份有限公司 | 用于晶片成像及处理的方法和设备 |
| EP2319073A1 (en) * | 2008-07-09 | 2011-05-11 | BT Imaging Pty Ltd | Thin film imaging method and apparatus |
| SG158787A1 (en) | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Apparatus for detecting micro-cracks in wafers and method therefor |
| SG158782A1 (en) | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Method and system for detecting micro-cracks in wafers |
| US8742372B2 (en) | 2009-07-20 | 2014-06-03 | Bt Imaging Pty Ltd | Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials |
| JP5271185B2 (ja) * | 2009-07-28 | 2013-08-21 | 株式会社アイテス | 太陽光発電素子の検査装置 |
| EP2284520A1 (en) | 2009-07-28 | 2011-02-16 | David Marcos Muntal | Assembly for the inspection in a continuous manner of cells, strings and photovoltaic modules and inspection method thereof |
| CN102575986A (zh) * | 2009-08-14 | 2012-07-11 | Bt成像股份有限公司 | 用于硅光伏电池生产的光致发光成像系统 |
| CN102812349B (zh) | 2010-01-04 | 2016-03-09 | Bt成像股份有限公司 | 半导体设备的在线光致发光成像 |
| CN102156106A (zh) * | 2010-02-11 | 2011-08-17 | 致茂电子(苏州)有限公司 | 太阳能晶圆快速检测系统 |
| WO2011123469A1 (en) * | 2010-03-29 | 2011-10-06 | Intevac, Inc. | Time resolved photoluminescence imaging systems and methods for photovoltaic cell inspection |
| JP2013528808A (ja) * | 2010-06-04 | 2013-07-11 | ヘムロック・セミコンダクター・コーポレーション | 縁部方向のフォトルミネセンスを使用して半導体材料の妨害不純物を測定する方法 |
| US8629411B2 (en) | 2010-07-13 | 2014-01-14 | First Solar, Inc. | Photoluminescence spectroscopy |
| US8603839B2 (en) | 2010-07-23 | 2013-12-10 | First Solar, Inc. | In-line metrology system |
| US9209096B2 (en) | 2010-07-30 | 2015-12-08 | First Solar, Inc | Photoluminescence measurement |
| WO2012019219A1 (en) | 2010-08-09 | 2012-02-16 | Bt Imaging Pty Ltd | Persistent feature detection |
| CN101988904A (zh) * | 2010-10-15 | 2011-03-23 | 中国电子科技集团公司第十八研究所 | 太阳能电池缺陷检测方法 |
| DE102011002960B3 (de) * | 2011-01-21 | 2012-04-26 | Osram Ag | Solarsimulator und Verfahren zum Betreiben eines Solarsimulators |
| KR20120113019A (ko) * | 2011-04-04 | 2012-10-12 | 삼성전기주식회사 | 태양전지 셀 검사 방법 및 장치 |
| JP5694042B2 (ja) * | 2011-04-28 | 2015-04-01 | 三洋電機株式会社 | 太陽電池モジュールの評価方法及び太陽電池モジュールの製造方法 |
| US9863890B2 (en) * | 2011-06-10 | 2018-01-09 | The Boeing Company | Solar cell testing apparatus and method |
| ITUD20110115A1 (it) * | 2011-07-19 | 2013-01-20 | Applied Materials Italia Srl | Dispositivo per la simulazione della radiazione solare e procedimento di test che utilizza tale dispositivo |
| US8604447B2 (en) | 2011-07-27 | 2013-12-10 | Kla-Tencor Corporation | Solar metrology methods and apparatus |
| CN103874918A (zh) * | 2011-08-12 | 2014-06-18 | Bt成像股份有限公司 | 半导体晶片中掺杂变化的光致发光成像 |
| JP5848583B2 (ja) * | 2011-11-02 | 2016-01-27 | 浜松ホトニクス株式会社 | 太陽電池関連試料測定システム |
| NL2007941C2 (en) * | 2011-12-09 | 2013-06-11 | Stichting Energie | Qualification of silicon wafers for photo-voltaic cells by optical imaging. |
| CN102608510B (zh) * | 2012-01-19 | 2014-03-26 | 上海交通大学 | 晶体硅太阳电池少子寿命的快速测定方法 |
| US9885662B2 (en) * | 2012-07-06 | 2018-02-06 | Bt Imaging Pty Ltd | Methods for inspecting semiconductor wafers |
| KR101256810B1 (ko) * | 2012-07-06 | 2013-04-23 | 주식회사 한국테크놀로지 | Ｅｌ 기법을 이용한 태양전지 검사장치 및 방법 |
| KR102068741B1 (ko) | 2013-06-04 | 2020-01-22 | 삼성디스플레이 주식회사 | 다결정 규소막의 검사 방법 |
| US9685906B2 (en) | 2013-07-03 | 2017-06-20 | Semilab SDI LLC | Photoluminescence mapping of passivation defects for silicon photovoltaics |
| DE102013112885A1 (de) * | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens |
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| US10018565B2 (en) | 2015-05-04 | 2018-07-10 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging with optical filtering |
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| US10883941B2 (en) | 2015-05-04 | 2021-01-05 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging |
| JP6520782B2 (ja) * | 2016-03-18 | 2019-05-29 | 信越半導体株式会社 | エピタキシャルウェーハの評価方法及び製造方法 |
| CN107091822B (zh) * | 2017-03-14 | 2019-09-10 | 华东师范大学 | 双光源激发光致发光检测半导体缺陷的装置及其检测方法 |
| JP6411683B1 (ja) * | 2017-10-16 | 2018-10-24 | 株式会社デンケン | 太陽電池検査装置及びカメラ付きソーラーシミュレータ |
| US11614406B2 (en) * | 2018-04-30 | 2023-03-28 | The Southern Company | Systems and methods for inspecting solar modules using high-power light sources |
| CN109100305B (zh) * | 2018-07-13 | 2022-02-18 | 陕西师范大学 | 一种液体分散系的数字化物质信息获取装置及方法 |
| US11474144B2 (en) | 2018-12-21 | 2022-10-18 | Industrial Technology Research Institute | Method for inspecting light-emitting diodes and inspection apparatus |
| DE102019121807A1 (de) | 2019-08-13 | 2021-02-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Analyse einer Mehrfachsolarzelle mit zumindest zwei Sub-Solarzellen mittels Lumineszenzstrahlung |
| CZ2020345A3 (cs) * | 2020-06-15 | 2021-12-15 | Fyzikální Ústav Av Čr, V. V. I. | Způsob a zařízení pro měření tloušťky tenkých vrstev i na hrubých podložkách |
| TWI759866B (zh) * | 2020-06-19 | 2022-04-01 | 財團法人工業技術研究院 | 發光二極體的檢測裝置及其檢測方法 |
| US20230304944A1 (en) * | 2020-09-08 | 2023-09-28 | Massachusetts Institute Of Technology | Automated Optical Measurement System To Determine Semiconductor Properties |
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| CN116386773A (zh) * | 2023-03-02 | 2023-07-04 | 南京航空航天大学 | 一种基于图神经网络的Si-Ge晶体直接带隙预测网络结构 |
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| JPS6148076U (ja) | 1984-08-31 | 1986-03-31 | 株式会社トーキン | コイル塗装用治具 |
| US4661770A (en) | 1984-12-18 | 1987-04-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and apparatus for measuring minority carrier lifetime in a direct band-gap semiconductor |
| US4652757A (en) | 1985-08-02 | 1987-03-24 | At&T Technologies, Inc. | Method and apparatus for optically determining defects in a semiconductor material |
| JPS62115346A (ja) † | 1985-11-14 | 1987-05-27 | Fujitsu Ltd | 半導体結晶中の不純物濃度の測定方法、および装置 |
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