KR101330651B1 - 타깃 조립체 및 이 타깃 조립체를 구비한 스퍼터링 장치 - Google Patents

타깃 조립체 및 이 타깃 조립체를 구비한 스퍼터링 장치 Download PDF

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Publication number
KR101330651B1
KR101330651B1 KR1020060076093A KR20060076093A KR101330651B1 KR 101330651 B1 KR101330651 B1 KR 101330651B1 KR 1020060076093 A KR1020060076093 A KR 1020060076093A KR 20060076093 A KR20060076093 A KR 20060076093A KR 101330651 B1 KR101330651 B1 KR 101330651B1
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KR
South Korea
Prior art keywords
target
targets
sputtering
backing plate
assembly
Prior art date
Application number
KR1020060076093A
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English (en)
Korean (ko)
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KR20070020345A (ko
Inventor
유우이치 오오이시
다카시 고마츠
하지메 나카무라
마코토 아라이
쥰야 기요타
노리아키 다니
Original Assignee
가부시키가이샤 알박
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Application filed by 가부시키가이샤 알박 filed Critical 가부시키가이샤 알박
Publication of KR20070020345A publication Critical patent/KR20070020345A/ko
Application granted granted Critical
Publication of KR101330651B1 publication Critical patent/KR101330651B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
KR1020060076093A 2005-08-15 2006-08-11 타깃 조립체 및 이 타깃 조립체를 구비한 스퍼터링 장치 KR101330651B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00235130 2005-08-15
JP2005235130A JP4939009B2 (ja) 2005-08-15 2005-08-15 ターゲット組立体及びこのターゲット組立体を備えたスパッタリング装置

Publications (2)

Publication Number Publication Date
KR20070020345A KR20070020345A (ko) 2007-02-21
KR101330651B1 true KR101330651B1 (ko) 2013-11-19

Family

ID=37737295

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060076093A KR101330651B1 (ko) 2005-08-15 2006-08-11 타깃 조립체 및 이 타깃 조립체를 구비한 스퍼터링 장치

Country Status (4)

Country Link
JP (1) JP4939009B2 (el)
KR (1) KR101330651B1 (el)
CN (1) CN1916232B (el)
TW (1) TWI381062B (el)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038271A1 (ja) * 2008-09-30 2010-04-08 キヤノンアネルバ株式会社 スパッタリング装置および薄膜形成方法
WO2012036079A1 (ja) * 2010-09-15 2012-03-22 シャープ株式会社 半導体装置の製造方法
JP5653257B2 (ja) * 2011-03-07 2015-01-14 株式会社アルバック スパッタリング装置及びスパッタリング方法
EP2748351A1 (en) * 2011-08-25 2014-07-02 Applied Materials, Inc. Sputtering apparatus and method
CN111719123B (zh) * 2019-03-21 2024-08-02 广东太微加速器有限公司 组合式靶件
KR20210010741A (ko) * 2019-07-18 2021-01-28 삼성디스플레이 주식회사 증착 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06220626A (ja) * 1992-12-14 1994-08-09 Leybold Ag プロセスガスを充填可能で真空化可能な加工室内に配置された材料被覆装置陰極のターゲット
JP2000239841A (ja) * 1999-02-24 2000-09-05 Ulvac Japan Ltd スパッタリング方法と装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952957B2 (ja) * 1980-06-16 1984-12-22 日電アネルバ株式会社 マグネトロン型スパッタ装置のカソ−ド部
JP3993721B2 (ja) * 1999-06-09 2007-10-17 東ソー株式会社 スパッタリングターゲット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06220626A (ja) * 1992-12-14 1994-08-09 Leybold Ag プロセスガスを充填可能で真空化可能な加工室内に配置された材料被覆装置陰極のターゲット
JP2000239841A (ja) * 1999-02-24 2000-09-05 Ulvac Japan Ltd スパッタリング方法と装置

Also Published As

Publication number Publication date
JP2007051308A (ja) 2007-03-01
CN1916232A (zh) 2007-02-21
CN1916232B (zh) 2011-07-20
JP4939009B2 (ja) 2012-05-23
KR20070020345A (ko) 2007-02-21
TW200710249A (en) 2007-03-16
TWI381062B (zh) 2013-01-01

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