TW200710249A - Target assembly and sputtering device equipped with the same target assembly - Google Patents

Target assembly and sputtering device equipped with the same target assembly

Info

Publication number
TW200710249A
TW200710249A TW095125489A TW95125489A TW200710249A TW 200710249 A TW200710249 A TW 200710249A TW 095125489 A TW095125489 A TW 095125489A TW 95125489 A TW95125489 A TW 95125489A TW 200710249 A TW200710249 A TW 200710249A
Authority
TW
Taiwan
Prior art keywords
target assembly
base plate
targets
device equipped
sputtering device
Prior art date
Application number
TW095125489A
Other languages
Chinese (zh)
Other versions
TWI381062B (en
Inventor
Yuuichi Ooishi
Takashi Komatsu
Hajime Nakamura
Makoto Arai
Junya Kiyota
Noriaki Tani
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200710249A publication Critical patent/TW200710249A/en
Application granted granted Critical
Publication of TWI381062B publication Critical patent/TWI381062B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Abstract

The objective of this invention is to spattering coating the target assembly through joining surfaces between the targets and the base plate will not expose to plasma, when the target and the base plate is joined by means of welding, so as to prevent abnormal discharge during sputtering process. This invention proposed to make the contact area between the particular shaped targets (31a-31f) and the base plate (32a-32f) is less than the maximum cross section area of the targets.
TW095125489A 2005-08-15 2006-07-12 A target assembly, and a sputtering apparatus provided with the target assembly TWI381062B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005235130A JP4939009B2 (en) 2005-08-15 2005-08-15 Target assembly and sputtering apparatus provided with the target assembly

Publications (2)

Publication Number Publication Date
TW200710249A true TW200710249A (en) 2007-03-16
TWI381062B TWI381062B (en) 2013-01-01

Family

ID=37737295

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125489A TWI381062B (en) 2005-08-15 2006-07-12 A target assembly, and a sputtering apparatus provided with the target assembly

Country Status (4)

Country Link
JP (1) JP4939009B2 (en)
KR (1) KR101330651B1 (en)
CN (1) CN1916232B (en)
TW (1) TWI381062B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4599473B2 (en) * 2008-09-30 2010-12-15 キヤノンアネルバ株式会社 Sputtering apparatus and thin film forming method
WO2012036079A1 (en) * 2010-09-15 2012-03-22 シャープ株式会社 Manufacturing method for semiconductor device
JP5653257B2 (en) * 2011-03-07 2015-01-14 株式会社アルバック Sputtering apparatus and sputtering method
US20150021166A1 (en) * 2011-08-25 2015-01-22 Applied Materials, Inc. Sputtering apparatus and method
CN111719123A (en) * 2019-03-21 2020-09-29 广东太微加速器有限公司 Combined target
KR20210010741A (en) * 2019-07-18 2021-01-28 삼성디스플레이 주식회사 Depositing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5952957B2 (en) * 1980-06-16 1984-12-22 日電アネルバ株式会社 Cathode part of magnetron type sputtering equipment
DE4242079A1 (en) * 1992-12-14 1994-06-16 Leybold Ag Target for a cathode arranged in an evacuable process chamber floodable with a process gas
JP2000239841A (en) * 1999-02-24 2000-09-05 Ulvac Japan Ltd Method and device for sputtering
JP3993721B2 (en) * 1999-06-09 2007-10-17 東ソー株式会社 Sputtering target

Also Published As

Publication number Publication date
KR20070020345A (en) 2007-02-21
TWI381062B (en) 2013-01-01
CN1916232A (en) 2007-02-21
CN1916232B (en) 2011-07-20
KR101330651B1 (en) 2013-11-19
JP2007051308A (en) 2007-03-01
JP4939009B2 (en) 2012-05-23

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