CN1916232B - Target assembly and sputtering device with target assembly - Google Patents
Target assembly and sputtering device with target assembly Download PDFInfo
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- CN1916232B CN1916232B CN2006101155202A CN200610115520A CN1916232B CN 1916232 B CN1916232 B CN 1916232B CN 2006101155202 A CN2006101155202 A CN 2006101155202A CN 200610115520 A CN200610115520 A CN 200610115520A CN 1916232 B CN1916232 B CN 1916232B
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- backboard
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Abstract
This invention provides a target assembly which is made by jointing a target with a backing plate through a bonding material, but makes the jointed surface between the target and the backing plate not to be exposed to plasma when the target assembly is sputtered, and consequently prevents overdischarge from occurring while the target assembly is sputtered. This target assembly makes an area of the jointed surface between the targets 31a to 31f to be sputtered having a predetermined shape and the backing plates 32a to 32f smaller than the maximum cross sectional area of the target.
Description
Technical field
The present invention relates to engage target molectron that target and backboard form and sputter equipment with this target molectron.
Background technology
In sputtering method, on the treatment substrate surface, make the target acceleration of regulation shape and impact by the composition of film forming film to basis by making the ion in the plasma body, target atom is dispersed, on the treatment substrate surface, form film.At this moment, temperature uprises target owing to be subjected to the ionic impact, so exist target to fuse, occur problems such as crackle.
Therefore, by the grafting material that constitutes by the high material of thermal conductivities such as indium or tin target is joined on the backboard for example made of copper and to make the target molectron, under this state, be installed on the sputter cathode, be formed on the structure by utilizing water coolant (refrigeration agent) cooling backboard to come target is carried out indirect heat extraction during the sputter.
In the case, in the target molectron in past, for the cooling efficiency that improves target and utilize fixed mechanisms such as bolt that it is assembled on the sputter cathode, set the profile of backboard greatlyyer, utilize from the outstanding laterally partial fixing (patent document 1) on sputter cathode of the periphery of target than the profile of target.
Patent document 1: the spy opens flat 7-26375 communique (for example, with reference to Fig. 1).
But, in recent years, utilize sputtering method that the so big film forming situation of substrate of area of glass substrate that FPD makes usefulness is got more and more.At this moment, in order to carry out film forming under the inhomogeneity state of the membranous distribution when highly keeping film thickness distribution and carrying out reactive sputtering, have to appoint to have proposed to constitute as described below sputter equipment for large-area substrate.
Promptly, relatively be set up in parallel the identical shaped a plurality of targets that form Nogata body etc. with substrate, and distribute 1 AC power to connect to 2 adjacent targets, utilize this AC power, apply negative potential and apply earthing potential or positive potential to either party's target to the opposing party's target, by making the target that has applied this earthing potential or positive potential play the anodic effect, the target that has applied negative potential is carried out sputter, frequency according to AC power, alternately switch the current potential of target, successively each target is carried out sputter (with reference to the special 2004-69413 of hope specification sheets).At this moment, for target closely is set mutually, make backboard consistent with the width that is set up in parallel direction of target along the width that is set up in parallel direction.
When as above constituting sputter equipment, owing to there is no need to be provided with each other structure units such as any anode and negative electrode at target, so can make the space that does not emit sputtering particle as far as possible little (interval between the target can diminish), have and highly to keep under the inhomogeneity state of film thickness distribution, membranous distribution large-area substrate being carried out film forming advantage.
But, in above-mentioned sputter equipment, in order to improve the utilising efficiency of each target, at the rear of target the magnet set zoarium is set, when the magnet set zoarium along target be set up in parallel the direction back and forth movement time, the plasma body that is taken place in target the place ahead spreads to each target molectron each other, exists the junction surface of target and backboard to be exposed in the plasma body and the problem that makes the grafting material fusion, oozes out.
If grafting material oozes out, will cause producing paradoxical discharge during the sputter, can not carry out good film forming.
Summary of the invention
Therefore, the present invention is in view of above each point, even if its purpose is to provide when carrying out sputter under the state that is set up in parallel each target molectron, the junction surface of target and backboard can not be exposed in the plasma body yet, and then brings out the target molectron of paradoxical discharge and the sputter equipment with this target molectron can prevent sputter the time.
In order to solve above-mentioned problem, the target molectron of a first aspect of the present invention is characterised in that to have: the sputtering target of regulation shape is arranged, and the backboard of rear side that joins the sputter face of this target by grafting material to; Area with junction surface described target described backboard is set forr a short time than the maximum cross-section area of target.
According to the present invention, be installed on the sputter cathode with the state of the target molectron of having assembled target and backboard, during sputter,, indirectly target is carried out heat extraction by utilizing refrigerant cooling backboard, prevent the target fusion and the crack occurs.At this moment, because the area with junction surface target backboard is set forr a short time than the maximum cross-section area of target, so the part on the junction surface of target and backboard is positioned at the inboard of an end of target, utilize the sidewall of the target that stretches out laterally, prevent spreading of plasma body junction surface hitherward.
When the spacing parallel arranging that also can separate regulation in vacuum chamber is provided with a plurality of target, by must the distance more mutual making the mutual distance setting of backboard that joins these targets to the area on described junction surface littler greatly than the maximum cross-section area of target than adjacent target.
In addition, when the profile of above-mentioned target is polygon, if on whole one side of opposed facing target, must be bigger the mutual distance setting of described backboard, even if then the magnet set zoarium is being set and is making it at the rear of target along under the situation that is set up in parallel the direction back and forth movement of target for the utilising efficiency that improves each target, the plasma body that target the place ahead is produced also can not spread to the junction surface of target and backboard each other from the target that is set up in parallel, so can prevent during the sputter paradoxical discharge bring out, carry out good film forming.
And, also can make interval more than or equal to 5mm from the end face of described target to the end face of backboard.If littler, then when target is set, the worry that is exposed in the plasma body is arranged adjacent than 5mm.In addition, about the upper limit, so long as scope that can cooled target during sputter gets final product.
In addition, another kind of sputter equipment of the present invention is characterised in that, the spacing parallel arranging that separates regulation is provided with foregoing target molectron, the magnet set zoarium that the mode that forms magnetic flux with the place ahead at each target respectively is provided with respectively at the rear of each target, be made of a plurality of magnet, and either party AC power that alternately applies negative potential and earthing potential or positive potential to each target.
Thus, for the big substrate of area, even if passing through under the situation of sputtering film-forming, also can under highly keeping film thickness distribution, the inhomogeneity state of membranous distribution when carrying out reactive sputtering, carry out film forming, on this basis, can prevent the bringing out of paradoxical discharge during the sputter, the result just can carry out good film forming.
At this moment, if be provided with, just can improve the utilising efficiency of each target so that described magnetic flux drives the driver element of each magnet set zoarium integratedly for the freely parallel mobile mode of target.
The effect of invention
As above illustrated, at target molectron of the present invention and have in the sputter equipment of this target molectron, during the sputter, the junction surface of target and backboard can not be exposed in the plasma body, and then, bring out paradoxical discharge in the time of can preventing sputter, can carry out good film forming.
Description of drawings
Fig. 1 is the sectional view that the structure of sputter equipment of the present invention roughly is described.
Fig. 2 is the orthographic plan of the structure of explanation target molectron.
Fig. 3 is the sectional view that amplifies the part of the target molectron shown in the presentation graphs 1.
Fig. 4 is the figure of the relation of the expression number of times that drops into electric power and arc-over.
Embodiment
Describe referring to figs. 1 through Fig. 3, the 1st, the sputter equipment (below be called " sputter equipment ") with magnetic control tubular type of the negative electrode that has been set up in parallel cathode sets zoarium of the present invention.Sputter equipment 1 is a through type, has the vacuum chamber 11 that can keep the specified vacuum degree by rotor pump, turbomolecular pump equal vacuum air-releasing mechanism (not shown).In the upper space of vacuum chamber 11, be provided with not shown substrate conveyer.This substrate conveyer has known structure, for example, has the carriage that treatment substrate S is housed, and driver element is intermittently driven, to the position relative with the target that is set up in parallel described later transport process substrate S successively.
In vacuum chamber 11, be provided with gas introduction unit 2.Gas introduction unit 2 by the flue 22 that is provided with mass flow controller 21, communicates with gas source 23, the reactant gasess such as oxygen that use when can be in sputtering chamber 11 importing sputter gas such as argon and reactive sputtering with certain flow.Downside at vacuum chamber 11 disposes cathode sets zoarium 3.
Cathode sets zoarium 3 has and roughly is 6 the target 31a～31f Nogata body, that form same shape.Each target 31a～31f, according to Al alloy, Mo, ITO etc. will be on treatment substrate S the composition of film forming film, be made respectively with known method, joining to by grafting material Bo becomes the target molectron on backboard 32a～32f, be respectively installed on the cathode sets zoarium 3 with this state.
At the rear of target 31a～31f, be respectively equipped with the fit 33a～33f of 6 magnet set.Fit 33a～the 33f of each magnet set forms same structure, has flat support section 331 that be provided with abreast with target 31a～31f, magneticsubstance system, in support section 331, be provided with along the bar-shaped central magnet 332 of the long side direction of target 31a～31f and the peripheral magnet 333 that is provided with along the periphery of support section 331.At this moment, central magnet 332 be converted into volume with when magnetization, be designed to each peripheral magnet 333 be converted into magnetization the time volume sum (peripheral magnet: centring magnet: peripheral magnet=1: 2: 1) equate.
Thus, the place ahead at each target 31a～31f, form the tunnel-shaped magnetic flux of equilibrated closed loop respectively, by catching ionized electronics in the place ahead of target 31a～31f and because the secondary electron that produces of sputter, plasma density is improved thereby the electron density in the place ahead of target 31a～31f is improved.
At each target 31a～31f, be connected with 3 AC power E1～E3 that applied voltage of alternating current.At this moment, 2 adjacent targets (for example 31a and 31b) are distributed 1 AC power E1, when a target 31a was applied negative potential, 31b applied earthing potential or positive potential to another target.
Then, treatment substrate S conveyance to the relative position of each target 31a～31f that is set up in parallel, behind the sputter gas by gas introducing mechanism 2 importing regulations, for example apply target 31a from negative potential to a side, 31c, 31e, apply earthing potential or target 31b from positive potential to the opposing party, 31d, 31f by each AC power E1～E3.At this moment, the opposing party's target plays the effect of anode 31b, 31d, 31f, produce plasma body each other respectively being connected respectively to 1 target 31a～31d on AC power E1～E3, target 31a, the 31c, the 31e that have applied negative potential are by sputter, according to the frequency of AC power E1～E3, switch the current potential of target 31a～31f then, the opposing party's target 31b, 31d, 31f are by sputter, each target 31a～31f replaces by sputter thus, film forming on the whole surface of treatment substrate S.
Thus, owing to there is no need at the target 31a～31f that does not emit sputtering particle component parts such as any anode or shielding to be set each other, so can make the zone that does not emit sputtering particle as far as possible little.As a result, can make the film thickness distribution in the treatment substrate S face roughly even.
When as above constituting fit 33a of each magnet set～33f, the plasma density step-down of the top of central magnet 332 is compared with its periphery, and the erosion amount of the target 31a～31f that produces along with the carrying out of sputter tails off.Therefore, the width that is set up in parallel direction along target 31a～31f of support section 331, set forr a short time than the width that is set up in parallel direction of each target 31a～31f.And, cylinder 4 is set on cathode sets zoarium 3, fit 33a～the 33f of each magnet set is installed on its drive shaft 41, make the parallel integratedly back and forth movement of the fit 33a～33f of magnet set in 2 positions (L point, R point), change the position of tunnel-shaped magnetic flux M along the level that is set up in parallel direction of each target 31a～31f.At this moment, peripheral magnet 333 moves to the outside, end that is set up in parallel direction of target 31a～31f.
In order to suppress the generation of paradoxical discharge, preferably at L point or R point holding magnet molectron 33a～33f, for example the film forming of treatment substrate S finishes, stops to apply voltage of alternating current to target 31a～31f, after temporarily stopping discharge, when next treatment substrate S is carried in the position relative with target 31a～31f, drive cylinder 4 and make the fit 33a～33f of magnet set, be that tunnel-shaped magnetic flux moves between L point and R point.Thus, can approximate equality ground corrode whole of the outer peripheral edges portion that comprises target 31a～31f, utilising efficiency improves.
But, when making the fit 33a of magnet set～33f to-and-fro movement as mentioned above, exist plasma body to spread to the problem on the junction surface of target 31a～31f and backboard 32a～32f from the space each other, side 312 of target 31a～31f.Thus, the junction surface that is necessary to solve target 31a～31f and backboard 32a～32f is exposed in the plasma body and the problem that makes the grafting material fusion, oozes out.
As shown in Figure 3, in the present embodiment, compare with the distance D 1 (being set in the scope of 2mm～10mm) that adjacent target 31a～31f is mutual, distance D 2, the D3 mutual backboard set greatlyyer, make that the area with junction surface target 31a～31f backboard 32a～32f is littler than the cross-sectional area of target.At this moment, 4 target 31b with central authorities among the target 31a～31f that is set up in parallel, 31c, 31d, 31e engages, section is rectangular backboard 32b, 32c, 32d, 32e, it is along the width B wc that is set up in parallel direction, size is set than target 31b, 31c, 31d, the width Tw that the edge of 31e is set up in parallel direction is little, backboard 32b, 32c, 32d, the mutual distance D 2 of 32e is roughly certain, and makes backboard 32b, 32c, 32d, the two ends on the junction surface of 32e are positioned at target 31b, 31c, 31d, the 31e back side, be set up in parallel the two ends of direction from the edge, on the equally spaced position.
Join the width B we of edge direction initialization arranged side by side of backboard 32a, the 32f of the target 31a, the 31f that are positioned at both sides to, it is consistent with distance D 2 that size is set at the distance D 3 that makes between adjacent backboard 32b, the 32e, and the end face in the outside of backboard 32a, 32f becomes a face with the end face in the outside of target 31a, 31f.On the other hand, each backboard 32a～32f, with the rectangular direction of direction initialization arranged side by side on (long side direction of target 31a～31f), form the outside of the end that extends to target 31a～31f, utilize fixed mechanism T such as bolt to be fixed to (with reference to Fig. 2) on the cathode sets zoarium 3 at this extended position.
Thus, even if the fit 33a～33f of magnet set is back and forth movement between L point and R point as mentioned above, because the junction surface of target 31a～31f and backboard 32a～32f is positioned at the inboard, end that the edge of target 31a～31f is set up in parallel direction, sidewall 312 by the target 31a～31f outside extending to can prevent plasma body spreading to the junction surface, and then can prevent bringing out of paradoxical discharge in the sputter, carry out good film forming.
Distance D 2, D3 are set at more than or equal to 10mm (end that is set up in parallel direction from the edge of target 31a～31f separates the interval more than or equal to 5mm, and the edge that backboard 32a～32f is set is set up in parallel the end of direction).If littler than 5mm, then there is the worry that is exposed to plasma body on the junction surface.In addition, about the upper limit, so long as can cooled target during sputter, can prevent that the fusion of target 31a～31f and fissured scope from getting final product.
In addition, when each target 31a～31f closely was provided with mutually, the mutual interval of the fit 33a～33f of magnet set diminished.At this moment, measure the fit 33a～33f of each magnet set the interval that above each magnet 332,333, separates regulation locational, along the magneticstrength that is set up in parallel magneticstrength direction, vertical direction and horizontal direction of fit 33a, 33f of magnet set, as can be known on equidirectional the peripheral magnet 333 of identical polar near and produce magneticinterference, the magneticflux-density at this place is higher than the magneticflux-density at place, top of the peripheral magnet 333 of the magnet set that is positioned at both ends fit 33a, 33f, and the magnetic field balance has just been destroyed.
For this reason, both sides at the fit 33a～33f of the magnet set that is set up in parallel, so that the consistent respectively mode of polarity of the peripheral magnet 333 of the fit 33a of adjacent magnet set and the peripheral magnet of the fit 33f of magnet set is provided with bar-shaped auxiliary magnet 5, to support the support section 51 of auxiliary magnet 5 to be installed on the drive shaft 41 of cylinder 4, can move with the fit 33a of magnet set～33f one.Thus, the magneticflux-density at the place, two ends of the fit 33a～33f of magnet set also can uprise, and the magnetic field balance improves, and then the membranous distribution can make the film thickness distribution in the treatment substrate S face and carry out reactive sputtering the time is roughly even.
In addition, when being set up in parallel the magnet set zoarium, to wish to guarantee the magnetic field balance, be not limited to be provided with auxiliary magnet.For example, also can only make the width dimensions of the peripheral magnet in two outsides that are positioned at the magnet set zoarium that is set up in parallel become big, perhaps be replaced with the magneticflux-density that produces from magnet and become big material as the magneticflux-density correcting unit.
[embodiment 1]
In the present embodiment, utilize sputter equipment shown in Figure 1, adopt glass substrate (1000mm *, this glass substrate is transported to the position relative with target 31a～31f by the substrate delivery unit 1200mm) as treatment substrate S.Utilize Al as target 31a～31f, use known method, each target 31a～31f is made into the physical dimension with 200mm * 1700mm, the Nogata body of thickness 10mm, and it is last as the target molectron to join backboard 32a～32f respectively to.
At this moment, utilize In as grafting material, each target molectron is installed at 31,32 o'clock on cathode sets zoarium 3, setting the mutual distance D 1 of target 31a～31f is 2mm, and mutual distance D 2, the D3 of backboard is 10mm.In addition, the distance of setting between target 31a～31f and the glass substrate is 160mm.
As sputtering condition, remained 0.3Pa by the pressure in the vacuum chamber 11 of vacuum exhaust, pilot-gas imports the mass flow controller 21 of unit 2, and the argon as sputter gas is imported in the vacuum chamber 11.In addition, setting by AC power E1 is 40kW to the input electric power of target 31a～31f, and frequency is 50kHz.Then, drop into electric power to the mode that each target 31a～31f alternately applies either party in negative potential and positive potential or the earthing potential, a glass substrate is passed through spatter film forming with the frequency of 50kHz.And, during sputter, fixed the fit 33a～33f of magnet set at the L point.
In Fig. 4, show the passing of detected paradoxical discharge number of times along with the increase of accumulative total electric power when carrying out sputter under these conditions with line E1.When exceeding certain limit, sputtering current during (2 minutes) interior sputter at the appointed time at this moment, and the some changes in the sputtering voltage be detected as paradoxical discharge.And, when reaching 100kWH, accumulative total electric power suspends sputter, temporarily to the atmosphere opening vacuum chamber.
(comparative example 1)
As a comparative example 1, sputtering condition is set as identical with above-mentioned embodiment 1, but use after making the target molectron, cover along the target that is set up in parallel direction of target molectron and the lateral target molectron of backboard with copper by meltallizing processing.
In the chart as shown in Figure 4, when representing to carry out sputter with above-mentioned condition with line C1, the passing of the number of times of detected paradoxical discharge (electric arc) along with the increase of accumulative total electric power.At this moment, the detection of paradoxical discharge is identical with embodiment 1, and suspends sputter when accumulative total electric power reaches 100kWH, temporarily to the atmosphere opening vacuum chamber.
(comparative example 2)
As a comparative example 2, sputtering condition is set as identical with above-mentioned embodiment 1, but use backboard to be set up in parallel the identical target molectron of width of direction along the width that is set up in parallel direction and the edge of target.
In the chart as shown in Figure 4, when representing to carry out sputter with above-mentioned condition with line C2, the passing of the number of times of detected paradoxical discharge (electric arc) along with the increase of accumulative total electric power.At this moment, the detection of paradoxical discharge is identical with embodiment 1, and suspends sputter when accumulative total electric power reaches 100kWH, temporarily to the atmosphere opening vacuum chamber.
Describe with reference to Fig. 4, at the beginning of sputter began, owing to the reasons such as oxidation on target surface, embodiment 1, comparative example 1 and comparative example 2 all were that to detect the number of times of paradoxical discharge more.This situation after atmosphere is temporarily developed vacuum chamber, also is the same when beginning sputter once more.At this, in comparative example 1,,, the target that covers with copper and the side of backboard are confirmed with visual temporarily behind the atmosphere opening vacuum chamber along with the detection number of times of increase paradoxical discharge of accumulative total electric power tails off and settles out, do not find arc trace yet.
But, after atmosphere is temporarily opened vacuum chamber, when the replacing glass substrate begins sputter once more, even totally electric power increases, the detection number of times of paradoxical discharge is not suppressed to the sort of degree when totally electric power reaches 100kWH yet, after accumulative total electric power reaches about 220kWH, stop sputter, to the atmosphere opening vacuum chamber, when the target that Visual Confirmation covers with copper and the side of backboard, a plurality of arc traces have been found.
In addition, in comparative example 2, the detection number of times of paradoxical discharge is even if the increase of accumulative total electric power is also unstable, after accumulative total electric power reaches 100kWH, stop sputter, to the atmosphere opening vacuum chamber, during the side of Visual Confirmation target and backboard, find a plurality of arc traces, also find oozing out of grafting material.
To this, in embodiment 1, at the beginning of sputter begins and behind the temporary transient atmosphere opening, along with the detection number of times of increase paradoxical discharge of accumulative total electric power tails off and stable, when vacuum chamber being carried out atmosphere opening at every turn, arc trace is not found in the side of Visual Confirmation target and backboard, and does not find that grafting material oozes out.
Claims (4)
1. sputter equipment is characterized in that having:
By the sputtering target with regulation shape, and the backboard of rear side that joins the sputter face of this target by grafting material to constitutes, and in vacuum chamber, separate the interval of regulation and the non-structure parts be set up in parallel a plurality of target molectrons;
The magnet set zoarium that the mode that forms magnetic flux respectively with the place ahead at each target is separately positioned on the rear of each target, is made of a plurality of magnet; And
Paired target in the above-mentioned a plurality of targets that are set up in parallel alternatively applies the AC power of any one party of negative potential and earthing potential or positive potential,
In this sputter equipment, each target is alternatively switched to anode electrode, cathode electrode and carry out sputter,
Wherein, set the described backboard and the area on the junction surface of described target littler than the maximum cross-section area of target,
The distance setting mutual target adjacent in the described target becomes less than the mutual distance of backboard that is engaged on these targets.
2. sputter equipment according to claim 1, it is characterized in that, when the profile of described target was polygon, mutual interval was set for less than the mutual distance of backboard that is engaged on these targets on opposed facing whole one side of two targets that are set up in parallel, target.
3. sputter equipment according to claim 2 is characterized in that, the interval from the end face of described target to the end face of backboard is more than or equal to 5mm.
4. sputter equipment according to claim 1 is characterized in that, also is provided with the driver element that drives each magnet set zoarium with described magnetic flux with respect to the freely parallel mobile mode of target integratedly.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005235130 | 2005-08-15 | ||
| JP2005235130A JP4939009B2 (en) | 2005-08-15 | 2005-08-15 | Target assembly and sputtering apparatus provided with the target assembly |
| JP2005-235130 | 2005-08-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1916232A CN1916232A (en) | 2007-02-21 |
| CN1916232B true CN1916232B (en) | 2011-07-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101155202A Active CN1916232B (en) | 2005-08-15 | 2006-08-15 | Target assembly and sputtering device with target assembly |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4939009B2 (en) |
| KR (1) | KR101330651B1 (en) |
| CN (1) | CN1916232B (en) |
| TW (1) | TWI381062B (en) |
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| JP4599473B2 (en) * | 2008-09-30 | 2010-12-15 | キヤノンアネルバ株式会社 | Sputtering apparatus and thin film forming method |
| WO2012036079A1 (en) * | 2010-09-15 | 2012-03-22 | シャープ株式会社 | Manufacturing method for semiconductor device |
| JP5653257B2 (en) * | 2011-03-07 | 2015-01-14 | 株式会社アルバック | Sputtering apparatus and sputtering method |
| US20150021166A1 (en) * | 2011-08-25 | 2015-01-22 | Applied Materials, Inc. | Sputtering apparatus and method |
| CN111719123A (en) * | 2019-03-21 | 2020-09-29 | 广东太微加速器有限公司 | Combined target |
| KR20210010741A (en) * | 2019-07-18 | 2021-01-28 | 삼성디스플레이 주식회사 | Depositing apparatus |
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| JPS5952957B2 (en) * | 1980-06-16 | 1984-12-22 | 日電アネルバ株式会社 | Cathode part of magnetron type sputtering equipment |
| DE4242079A1 (en) * | 1992-12-14 | 1994-06-16 | Leybold Ag | Target for a cathode arranged in an evacuable process chamber floodable with a process gas |
| JP2000239841A (en) * | 1999-02-24 | 2000-09-05 | Ulvac Japan Ltd | Method and device for sputtering |
| JP3993721B2 (en) * | 1999-06-09 | 2007-10-17 | 東ソー株式会社 | Sputtering target |
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| JP特开2004-143535A 2004.05.20 |
| JP特开2004-346387A 2004.12.09 |
| JP特开平11-229125A 1999.08.24 |
| JP特开平6-93441A 1994.04.05 |
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| KR20070020345A (en) | 2007-02-21 |
| TWI381062B (en) | 2013-01-01 |
| CN1916232A (en) | 2007-02-21 |
| TW200710249A (en) | 2007-03-16 |
| KR101330651B1 (en) | 2013-11-19 |
| JP2007051308A (en) | 2007-03-01 |
| JP4939009B2 (en) | 2012-05-23 |
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