KR101330344B1 - 포토리소그래피용 시스템, 마스크 및 방법 - Google Patents
포토리소그래피용 시스템, 마스크 및 방법 Download PDFInfo
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- KR101330344B1 KR101330344B1 KR1020087008802A KR20087008802A KR101330344B1 KR 101330344 B1 KR101330344 B1 KR 101330344B1 KR 1020087008802 A KR1020087008802 A KR 1020087008802A KR 20087008802 A KR20087008802 A KR 20087008802A KR 101330344 B1 KR101330344 B1 KR 101330344B1
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- photomask
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- 238000000034 method Methods 0.000 title claims abstract description 163
- 238000000206 photolithography Methods 0.000 title claims abstract description 37
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- 238000012545 processing Methods 0.000 claims description 45
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 27
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77599105P | 2005-09-13 | 2005-09-13 | |
| US60/775,991 | 2005-09-13 | ||
| PCT/US2006/035985 WO2007033362A2 (en) | 2005-09-13 | 2006-09-13 | Systems, masks, and methods for photolithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080070623A KR20080070623A (ko) | 2008-07-30 |
| KR101330344B1 true KR101330344B1 (ko) | 2013-11-15 |
Family
ID=37865601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087008802A Active KR101330344B1 (ko) | 2005-09-13 | 2006-09-13 | 포토리소그래피용 시스템, 마스크 및 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7707541B2 (enExample) |
| EP (1) | EP1925020A4 (enExample) |
| JP (1) | JP5405109B2 (enExample) |
| KR (1) | KR101330344B1 (enExample) |
| CN (1) | CN101297390B (enExample) |
| TW (1) | TWI398721B (enExample) |
| WO (1) | WO2007033362A2 (enExample) |
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| US7124394B1 (en) | 2003-04-06 | 2006-10-17 | Luminescent Technologies, Inc. | Method for time-evolving rectilinear contours representing photo masks |
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| US7480889B2 (en) | 2003-04-06 | 2009-01-20 | Luminescent Technologies, Inc. | Optimized photomasks for photolithography |
| US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
| CN101297390B (zh) | 2005-09-13 | 2011-04-20 | 朗明科技公司 | 用于光刻法的系统、掩模和方法 |
| US7788627B2 (en) | 2005-10-03 | 2010-08-31 | Luminescent Technologies, Inc. | Lithography verification using guard bands |
| US7921385B2 (en) | 2005-10-03 | 2011-04-05 | Luminescent Technologies Inc. | Mask-pattern determination using topology types |
| WO2007041701A2 (en) * | 2005-10-04 | 2007-04-12 | Luminescent Technologies, Inc. | Mask-patterns including intentional breaks |
| WO2007044557A2 (en) | 2005-10-06 | 2007-04-19 | Luminescent Technologies, Inc. | System, masks, and methods for photomasks optimized with approximate and accurate merit functions |
| WO2008039674A2 (en) | 2006-09-20 | 2008-04-03 | Luminescent Technologies, Inc. | Photo-mask and wafer image reconstruction |
| US8331645B2 (en) * | 2006-09-20 | 2012-12-11 | Luminescent Technologies, Inc. | Photo-mask and wafer image reconstruction |
| US20080235497A1 (en) * | 2006-11-26 | 2008-09-25 | Tomblin Jimmy J | Parallel Data Output |
| US8214775B2 (en) * | 2007-09-14 | 2012-07-03 | Luminescent Technologies, Inc. | System for determining repetitive work units |
| US8111380B2 (en) * | 2007-09-14 | 2012-02-07 | Luminescent Technologies, Inc. | Write-pattern determination for maskless lithography |
| US8082524B2 (en) | 2008-04-15 | 2011-12-20 | Luminescent Technologies, Inc. | Mask patterns for use in multiple-exposure lithography |
| US8293546B2 (en) | 2008-06-17 | 2012-10-23 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system with sub-geometry removal and method of manufacture thereof |
| JP5159501B2 (ja) * | 2008-08-06 | 2013-03-06 | キヤノン株式会社 | 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイス製造方法 |
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| US8584056B2 (en) | 2008-11-21 | 2013-11-12 | Asml Netherlands B.V. | Fast freeform source and mask co-optimization method |
| US8683396B2 (en) * | 2009-07-22 | 2014-03-25 | Synopsys, Inc. | Determining source patterns for use in photolithography |
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| KR102851231B1 (ko) * | 2020-06-03 | 2025-08-27 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 디바이스 및 이에 대한 패턴을 생성하는 시스템, 제품, 및 방법 |
| JP7569930B2 (ja) * | 2020-09-18 | 2024-10-18 | アプライド マテリアルズ インコーポレイテッド | 補助的なフィーチャを用いてデジタルリソグラフィのプロセスウィンドウ及び解像度を改善する方法 |
| CN114200768B (zh) * | 2021-12-23 | 2023-05-26 | 中国科学院光电技术研究所 | 基于水平集算法的超分辨光刻逆向光学邻近效应修正方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| EP1925020A2 (en) | 2008-05-28 |
| EP1925020A4 (en) | 2014-01-01 |
| KR20080070623A (ko) | 2008-07-30 |
| JP5405109B2 (ja) | 2014-02-05 |
| TWI398721B (zh) | 2013-06-11 |
| US7707541B2 (en) | 2010-04-27 |
| WO2007033362A2 (en) | 2007-03-22 |
| TW200731001A (en) | 2007-08-16 |
| WO2007033362A3 (en) | 2007-09-27 |
| US20070184357A1 (en) | 2007-08-09 |
| CN101297390B (zh) | 2011-04-20 |
| CN101297390A (zh) | 2008-10-29 |
| JP2009508161A (ja) | 2009-02-26 |
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