JP5405109B2 - フォトリソグラフィのためのシステム、マスク、及び方法 - Google Patents

フォトリソグラフィのためのシステム、マスク、及び方法 Download PDF

Info

Publication number
JP5405109B2
JP5405109B2 JP2008530041A JP2008530041A JP5405109B2 JP 5405109 B2 JP5405109 B2 JP 5405109B2 JP 2008530041 A JP2008530041 A JP 2008530041A JP 2008530041 A JP2008530041 A JP 2008530041A JP 5405109 B2 JP5405109 B2 JP 5405109B2
Authority
JP
Japan
Prior art keywords
pattern
function
mask
photomask
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008530041A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009508161A5 (enExample
JP2009508161A (ja
Inventor
ダニエル エイブラムス
ダンピン ペン
スタンリー オーシャー
Original Assignee
ルミネセント テクノロジーズ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ルミネセント テクノロジーズ インコーポレイテッド filed Critical ルミネセント テクノロジーズ インコーポレイテッド
Publication of JP2009508161A publication Critical patent/JP2009508161A/ja
Publication of JP2009508161A5 publication Critical patent/JP2009508161A5/ja
Application granted granted Critical
Publication of JP5405109B2 publication Critical patent/JP5405109B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008530041A 2005-09-13 2006-09-13 フォトリソグラフィのためのシステム、マスク、及び方法 Active JP5405109B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77599105P 2005-09-13 2005-09-13
US60/775,991 2005-09-13
PCT/US2006/035985 WO2007033362A2 (en) 2005-09-13 2006-09-13 Systems, masks, and methods for photolithography

Publications (3)

Publication Number Publication Date
JP2009508161A JP2009508161A (ja) 2009-02-26
JP2009508161A5 JP2009508161A5 (enExample) 2009-11-05
JP5405109B2 true JP5405109B2 (ja) 2014-02-05

Family

ID=37865601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008530041A Active JP5405109B2 (ja) 2005-09-13 2006-09-13 フォトリソグラフィのためのシステム、マスク、及び方法

Country Status (7)

Country Link
US (1) US7707541B2 (enExample)
EP (1) EP1925020A4 (enExample)
JP (1) JP5405109B2 (enExample)
KR (1) KR101330344B1 (enExample)
CN (1) CN101297390B (enExample)
TW (1) TWI398721B (enExample)
WO (1) WO2007033362A2 (enExample)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7124394B1 (en) 2003-04-06 2006-10-17 Luminescent Technologies, Inc. Method for time-evolving rectilinear contours representing photo masks
US7698665B2 (en) 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
US7480889B2 (en) 2003-04-06 2009-01-20 Luminescent Technologies, Inc. Optimized photomasks for photolithography
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
CN101297390B (zh) 2005-09-13 2011-04-20 朗明科技公司 用于光刻法的系统、掩模和方法
US7788627B2 (en) 2005-10-03 2010-08-31 Luminescent Technologies, Inc. Lithography verification using guard bands
US7921385B2 (en) 2005-10-03 2011-04-05 Luminescent Technologies Inc. Mask-pattern determination using topology types
WO2007041701A2 (en) * 2005-10-04 2007-04-12 Luminescent Technologies, Inc. Mask-patterns including intentional breaks
WO2007044557A2 (en) 2005-10-06 2007-04-19 Luminescent Technologies, Inc. System, masks, and methods for photomasks optimized with approximate and accurate merit functions
WO2008039674A2 (en) 2006-09-20 2008-04-03 Luminescent Technologies, Inc. Photo-mask and wafer image reconstruction
US8331645B2 (en) * 2006-09-20 2012-12-11 Luminescent Technologies, Inc. Photo-mask and wafer image reconstruction
US20080235497A1 (en) * 2006-11-26 2008-09-25 Tomblin Jimmy J Parallel Data Output
US8214775B2 (en) * 2007-09-14 2012-07-03 Luminescent Technologies, Inc. System for determining repetitive work units
US8111380B2 (en) * 2007-09-14 2012-02-07 Luminescent Technologies, Inc. Write-pattern determination for maskless lithography
US8082524B2 (en) 2008-04-15 2011-12-20 Luminescent Technologies, Inc. Mask patterns for use in multiple-exposure lithography
US8293546B2 (en) 2008-06-17 2012-10-23 Globalfoundries Singapore Pte. Ltd. Integrated circuit system with sub-geometry removal and method of manufacture thereof
JP5159501B2 (ja) * 2008-08-06 2013-03-06 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイス製造方法
US8669023B2 (en) 2008-09-01 2014-03-11 D2S, Inc. Method for optical proximity correction of a reticle to be manufactured using shaped beam lithography
US8039176B2 (en) 2009-08-26 2011-10-18 D2S, Inc. Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography
US8584056B2 (en) 2008-11-21 2013-11-12 Asml Netherlands B.V. Fast freeform source and mask co-optimization method
US8683396B2 (en) * 2009-07-22 2014-03-25 Synopsys, Inc. Determining source patterns for use in photolithography
US9448473B2 (en) 2009-08-26 2016-09-20 D2S, Inc. Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
TWI496182B (zh) * 2009-08-26 2015-08-11 D2S Inc 以可變束模糊技術使用帶電粒子束微影術製造表面之方法及系統
US9164372B2 (en) 2009-08-26 2015-10-20 D2S, Inc. Method and system for forming non-manhattan patterns using variable shaped beam lithography
CN102043325B (zh) * 2009-10-13 2012-05-23 中芯国际集成电路制造(上海)有限公司 掩模图形校正方法以及掩模版制作方法
US20110089345A1 (en) * 2009-10-21 2011-04-21 D2S, Inc. Method and system for manufacturing a surface using charged particle beam lithography
US8503840B2 (en) 2010-08-23 2013-08-06 Lockheed Martin Corporation Optical-fiber array method and apparatus
US8797721B2 (en) 2010-02-02 2014-08-05 Apple Inc. Portable electronic device housing with outer glass surfaces
US8463016B2 (en) * 2010-02-05 2013-06-11 Luminescent Technologies, Inc. Extending the field of view of a mask-inspection image
US8498469B2 (en) * 2010-03-01 2013-07-30 Synopsys, Inc. Full-field mask error enhancement function
US8453076B2 (en) * 2010-03-16 2013-05-28 International Business Machines Corporation Wavefront engineering of mask data for semiconductor device design
US8555214B2 (en) 2010-09-14 2013-10-08 Luminescent Technologies, Inc. Technique for analyzing a reflective photo-mask
US8612903B2 (en) 2010-09-14 2013-12-17 Luminescent Technologies, Inc. Technique for repairing a reflective photo-mask
DE102011083774B4 (de) * 2010-10-04 2019-06-13 Carl Zeiss Sms Ltd. Verfahren zum Bestimmen von Laser korrigierenden Tool-Parametern
US8458622B2 (en) 2010-11-29 2013-06-04 Luminescent Technologies, Inc. Photo-mask acceptance technique
US8386968B2 (en) 2010-11-29 2013-02-26 Luminescent Technologies, Inc. Virtual photo-mask critical-dimension measurement
US9005852B2 (en) 2012-09-10 2015-04-14 Dino Technology Acquisition Llc Technique for repairing a reflective photo-mask
US8653454B2 (en) 2011-07-13 2014-02-18 Luminescent Technologies, Inc. Electron-beam image reconstruction
CN103150212B (zh) * 2011-12-06 2016-04-06 曙光信息产业股份有限公司 量子力学计算的实现方法和装置
JP5666630B2 (ja) * 2012-02-07 2015-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 基板トポグラフィ認識リソグラフィモデリング
JP6108693B2 (ja) * 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
CN102841964B (zh) * 2012-08-17 2015-04-08 大连理工大学 一种用于等离子体刻蚀剖面演化的三维计算方法
AU2012393956A1 (en) 2012-11-09 2015-04-30 Halliburton Energy Services, Inc. Integrated computational element design optimization and performance evaluation
CN103065038B (zh) * 2012-11-27 2015-12-23 大连理工大学 一种用于等离子体刻蚀的元胞-水平集联合模拟方法
KR102029645B1 (ko) * 2013-01-14 2019-11-18 삼성전자 주식회사 맞춤형 마스크의 제조 방법 및 맞춤형 마스크를 이용한 반도체 장치의 제조 방법
US9091935B2 (en) 2013-03-11 2015-07-28 Kla-Tencor Corporation Multistage extreme ultra-violet mask qualification
US9547233B2 (en) * 2013-03-14 2017-01-17 Kla-Tencor Corporation Film-growth model using level sets
US9494854B2 (en) 2013-03-14 2016-11-15 Kla-Tencor Corporation Technique for repairing an EUV photo-mask
KR20150024676A (ko) * 2013-08-27 2015-03-09 (주) 아이씨티케이 반도체 프로세스의 포토 마스크를 변형하여 ｐｕｆ를 생성하는 방법 및 장치
US9158884B2 (en) * 2013-11-04 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for repairing wafer defects
US10514614B2 (en) 2015-02-13 2019-12-24 Asml Netherlands B.V. Process variability aware adaptive inspection and metrology
CN106200257A (zh) * 2016-07-13 2016-12-07 武汉华星光电技术有限公司 一种具有曝光补正的光罩
US10042245B2 (en) 2016-07-13 2018-08-07 Wuhan China Star Optoelectronics Technology Co., Ltd. Photomask having an exposure correction function
CN106019815A (zh) * 2016-07-13 2016-10-12 武汉华星光电技术有限公司 一种具有曝光补正的光罩
EP4235305A1 (en) 2017-09-27 2023-08-30 ASML Netherlands B.V. A method in the manufacturing process of a device, a non-transitory computer-readable medium and a system configured to perform the method
KR102525162B1 (ko) 2017-12-18 2023-04-24 삼성전자주식회사 Opc 방법, 및 그 opc 방법을 이용한 마스크 제조방법
US10657213B2 (en) 2017-12-22 2020-05-19 D2S, Inc. Modeling of a design in reticle enhancement technology
US11301610B2 (en) * 2017-12-22 2022-04-12 D2S, Inc. Methods for modeling of a design in reticle enhancement technology
US10656530B2 (en) * 2018-05-08 2020-05-19 Asml Us, Llc Application of FreeForm MRC to SRAF optimization based on ILT mask optimization
JP7149857B2 (ja) 2019-01-08 2022-10-07 浜松ホトニクス株式会社 データ作成装置、光制御装置、データ作成方法、及びデータ作成プログラム
US11182929B2 (en) * 2019-02-25 2021-11-23 Center For Deep Learning In Electronics Manufacturing, Inc. Methods and systems for compressing shape data for electronic designs
US12302641B2 (en) 2019-09-23 2025-05-13 Applied Materials, Inc. Optimization of a digital pattern file for a digital lithography device
KR102851231B1 (ko) * 2020-06-03 2025-08-27 에이에스엠엘 네델란즈 비.브이. 패터닝 디바이스 및 이에 대한 패턴을 생성하는 시스템, 제품, 및 방법
JP7569930B2 (ja) * 2020-09-18 2024-10-18 アプライド マテリアルズ インコーポレイテッド 補助的なフィーチャを用いてデジタルリソグラフィのプロセスウィンドウ及び解像度を改善する方法
CN114200768B (zh) * 2021-12-23 2023-05-26 中国科学院光电技术研究所 基于水平集算法的超分辨光刻逆向光学邻近效应修正方法

Family Cites Families (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057475A (ja) * 1983-09-07 1985-04-03 Toshiba Corp パタ−ン認識方式
JP2862183B2 (ja) * 1989-04-28 1999-02-24 富士通株式会社 マスクの製造方法
DE69122313T2 (de) * 1990-06-21 1997-03-20 Honeywell Inc Auf variablem Horizont basierende adaptive Steuerung mit Mitteln zur Minimierung der Betriebskosten
JP3120474B2 (ja) * 1991-06-10 2000-12-25 株式会社日立製作所 半導体集積回路装置の製造方法
EP0529971B1 (en) * 1991-08-22 2003-07-23 Nikon Corporation High resolution printing technique by using a mask pattern adapted to the technique
US5242770A (en) * 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
US5525808A (en) * 1992-01-23 1996-06-11 Nikon Corporaton Alignment method and alignment apparatus with a statistic calculation using a plurality of weighted coordinate positions
US6042998A (en) * 1993-09-30 2000-03-28 The University Of New Mexico Method and apparatus for extending spatial frequencies in photolithography images
US5640199A (en) * 1993-10-06 1997-06-17 Cognex Corporation Automated optical inspection apparatus
US5546189A (en) * 1994-05-19 1996-08-13 View Engineering, Inc. Triangulation-based 3D imaging and processing method and system
US5508803A (en) * 1994-12-20 1996-04-16 International Business Machines Corporation Method and apparatus for monitoring lithographic exposure
KR0160924B1 (ko) * 1995-06-30 1998-12-15 김주용 노광 마스크
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof
JP3325465B2 (ja) * 1996-08-22 2002-09-17 株式会社東芝 形状シミュレーション方法
US6123733A (en) * 1996-11-27 2000-09-26 Voxel, Inc. Method and apparatus for rapidly evaluating digital data processing parameters
US6096567A (en) * 1997-12-01 2000-08-01 Electroglas, Inc. Method and apparatus for direct probe sensing
US6022644A (en) * 1998-03-18 2000-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Mask containing subresolution line to minimize proximity effect of contact hole
US6617096B2 (en) * 1998-05-22 2003-09-09 Siemens Aktiengesellschaft Method of producing an integrated circuit configuration
EP0985683A1 (en) * 1998-09-09 2000-03-15 Fuji Photo Film Co., Ltd. Photosensitive composition and method for manufacturing lithographic printing plate
US6558504B1 (en) * 1998-12-21 2003-05-06 Research Triangle Institute Plasma processing system and method
US6677948B1 (en) * 1999-06-14 2004-01-13 Mitutoyo Corporation Systems and methods for multi-resolution image defocusing
IL131092A (en) * 1999-07-25 2006-08-01 Orbotech Ltd Optical inspection system
IT1313154B1 (it) * 1999-08-05 2002-06-17 St Microelectronics Srl Maschera litografica per dispositivi a semiconduttore con finestra discavo a sezione poligonale,in particolare avente una sezione di almeno
US6601192B1 (en) * 1999-08-31 2003-07-29 Accenture Llp Assertion component in environment services patterns
US7031538B2 (en) * 1999-12-17 2006-04-18 Level Set Systems, Inc. Method and apparatus for feature-based quantization and compression of data
US6484306B1 (en) * 1999-12-17 2002-11-19 The Regents Of The University Of California Multi-level scanning method for defect inspection
US6596466B1 (en) * 2000-01-25 2003-07-22 Cypress Semiconductor Corporation Contact structure and method of forming a contact structure
JP3479024B2 (ja) * 2000-03-28 2003-12-15 Ｎｅｃエレクトロニクス株式会社 電子線露光用マスク及びそのパターン設計方法
US6611627B1 (en) * 2000-04-24 2003-08-26 Eastman Kodak Company Digital image processing method for edge shaping
JP2002055433A (ja) * 2000-06-13 2002-02-20 Asml Masktools Netherlands Bv 可変寸法を有するセリフを用いる光学的近接修正方法
US6787271B2 (en) * 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6733929B2 (en) * 2000-07-05 2004-05-11 Numerical Technologies, Inc. Phase shift masking for complex patterns with proximity adjustments
US20050136340A1 (en) * 2000-07-21 2005-06-23 Asml Netherlands B.V. Lithographic apparatus and methods, patterning structure and method for making a patterning structure, device manufacturing method, and device manufactured thereby
EP1246014A1 (en) * 2001-03-30 2002-10-02 ASML Netherlands B.V. Lithographic apparatus
CA2317336A1 (en) * 2000-09-06 2002-03-06 David Cowperthwaite Occlusion resolution operators for three-dimensional detail-in-context
JP2002122978A (ja) * 2000-10-18 2002-04-26 Sony Corp マスクデータの検証方法および検証プログラムを記録したコンピュータ読み取り可能な記録媒体
IL139368A (en) * 2000-10-30 2006-12-10 Nova Measuring Instr Ltd Process control for microlithography
US6383847B1 (en) * 2000-10-30 2002-05-07 International Business Machines Corporation Partitioned mask layout
US6625497B2 (en) * 2000-11-20 2003-09-23 Applied Materials Inc. Semiconductor processing module with integrated feedback/feed forward metrology
AU2002238409A1 (en) * 2000-11-30 2002-06-11 Sigma-C Gmbh Method and device for determining the properties of an integrated circuit
US6703170B1 (en) * 2000-12-13 2004-03-09 Dupont Photomasks, Inc. Method and apparatus for reducing loading effects on a semiconductor manufacturing component during an etch process
US7027658B2 (en) * 2000-12-20 2006-04-11 Level Set Systems, Inc. System for geometrically accurate compression and decompression
JP2002196230A (ja) * 2000-12-27 2002-07-12 Olympus Optical Co Ltd 結像シミュレーション法及びそれを用いた結像シミュレーション装置及び記憶媒体
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
JP2002351046A (ja) * 2001-05-24 2002-12-04 Nec Corp 位相シフトマスクおよびその設計方法
JP3895947B2 (ja) * 2001-05-31 2007-03-22 日本電気株式会社 光ファイバコード保持構造
IL143538A0 (en) * 2001-06-03 2002-04-21 Yeda Res & Dev Atomic lithography using squeezed atomic states
US6721938B2 (en) * 2001-06-08 2004-04-13 Numerical Technologies, Inc. Optical proximity correction for phase shifting photolithographic masks
US6601231B2 (en) * 2001-07-10 2003-07-29 Lacour Patrick Joseph Space classification for resolution enhancement techniques
US6810144B2 (en) * 2001-07-20 2004-10-26 Koninklijke Philips Electronics N.V. Methods of and system for detecting a cartoon in a video data stream
US6803155B2 (en) * 2001-07-31 2004-10-12 Micron Technology, Inc. Microlithographic device, microlithographic assist features, system for forming contacts and other structures, and method of determining mask patterns
ITTO20010804A1 (it) * 2001-08-08 2003-02-08 Professional Dietetics Srl Composizioni a base di aminoacidi, idonee alla terapia per la cicatrizzazione e/o riparazione di ferite e lesioni, in particolare per l'appl
US6764795B2 (en) * 2001-08-27 2004-07-20 Texas Instruments Incorporated Method and system for mask pattern correction
US7030997B2 (en) * 2001-09-11 2006-04-18 The Regents Of The University Of California Characterizing aberrations in an imaging lens and applications to visual testing and integrated circuit mask analysis
US6698007B2 (en) * 2001-10-09 2004-02-24 Numerical Technologies, Inc. Method and apparatus for resolving coloring conflicts between phase shifters
US6880135B2 (en) * 2001-11-07 2005-04-12 Synopsys, Inc. Method of incorporating lens aberration information into various process flows
US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof
JP3592666B2 (ja) * 2001-12-04 2004-11-24 株式会社東芝 露光用マスクパターンの補正方法、プログラム、マスクパターン形成方法、及び半導体装置の製造方法
US20030123707A1 (en) * 2001-12-31 2003-07-03 Park Seujeung P. Imaging-based distance measurement and three-dimensional profiling system
TWI236574B (en) * 2002-02-08 2005-07-21 Sony Corp Forming method of exposure mask pattern, exposure mask pattern and manufacturing method of semiconductor device
JP4139605B2 (ja) * 2002-03-01 2008-08-27 大日本印刷株式会社 片掘り型の基板掘り込み型位相シフトマスクにおけるマスク断面構造の決定方法
US6884551B2 (en) * 2002-03-04 2005-04-26 Massachusetts Institute Of Technology Method and system of lithography using masks having gray-tone features
US7107573B2 (en) * 2002-04-23 2006-09-12 Canon Kabushiki Kaisha Method for setting mask pattern and illumination condition
US6795069B2 (en) * 2002-05-29 2004-09-21 Mitsubishi Electric Research Laboratories, Inc. Free-form modeling of objects with variational implicit surfaces
JP4073265B2 (ja) * 2002-07-09 2008-04-09 富士通株式会社 検査装置及び検査方法
JP2006502422A (ja) * 2002-07-12 2006-01-19 ケイデンス デザイン システムズ インコーポレイテッド コンテクスト特定型のマスク検査のための方法及びシステム
US8013852B2 (en) * 2002-08-02 2011-09-06 Honda Giken Kogyo Kabushiki Kaisha Anthropometry-based skeleton fitting
US6842889B2 (en) * 2002-08-06 2005-01-11 Micron Technology, Inc. Methods of forming patterned reticles
JP2004111600A (ja) 2002-09-18 2004-04-08 Mitac Internatl Corp Ｉｃに内蔵されたｅｍｉ消去回路
US6794096B2 (en) * 2002-10-09 2004-09-21 Numerical Technologies, Inc. Phase shifting mask topography effect correction based on near-field image properties
JP4302965B2 (ja) * 2002-11-01 2009-07-29 株式会社日立ハイテクノロジーズ 半導体デバイスの製造方法及びその製造システム
TWI277827B (en) * 2003-01-14 2007-04-01 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
US7147975B2 (en) * 2003-02-17 2006-12-12 Matsushita Electric Industrial Co., Ltd. Photomask
EP1450206B1 (en) * 2003-02-21 2016-04-20 Canon Kabushiki Kaisha Mask and its manufacturing method, exposure, and semiconductor device fabrication method
CN102645851B (zh) 2003-03-31 2015-11-25 Asml荷兰有限公司 照明源和掩模优化
US7480889B2 (en) * 2003-04-06 2009-01-20 Luminescent Technologies, Inc. Optimized photomasks for photolithography
US7124394B1 (en) * 2003-04-06 2006-10-17 Luminescent Technologies, Inc. Method for time-evolving rectilinear contours representing photo masks
US7698665B2 (en) 2003-04-06 2010-04-13 Luminescent Technologies, Inc. Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
DE10327019A1 (de) * 2003-06-12 2004-12-30 Carl Zeiss Sms Gmbh Verfahren zur Bestimmung der Abbildungsgüte eines optischen Abbildungssystems
US6961920B2 (en) * 2003-09-18 2005-11-01 International Business Machines Corporation Method for interlayer and yield based optical proximity correction
US7003758B2 (en) * 2003-10-07 2006-02-21 Brion Technologies, Inc. System and method for lithography simulation
US6968532B2 (en) * 2003-10-08 2005-11-22 Intel Corporation Multiple exposure technique to pattern tight contact geometries
US7073162B2 (en) 2003-10-31 2006-07-04 Mentor Graphics Corporation Site control for OPC
US8151220B2 (en) * 2003-12-04 2012-04-03 Kla-Tencor Technologies Corp. Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data
US7506299B2 (en) * 2003-12-19 2009-03-17 Asml Holding N.V. Feature optimization using interference mapping lithography
US7294437B2 (en) * 2004-02-27 2007-11-13 Intel Corporation Quick and accurate modeling of transmitted field
US7403641B2 (en) * 2004-05-28 2008-07-22 Matsushita Electric Works, Ltd. Object recognition system
US7236123B2 (en) * 2004-09-03 2007-06-26 American Systems Corporation System for enhanced detection of a target
US20070011648A1 (en) 2004-10-06 2007-01-11 Abrams Daniel S Fast systems and methods for calculating electromagnetic fields near photomasks
KR20070100896A (ko) 2005-01-18 2007-10-12 루미네슨트 테크놀로지, 인크. 콘택트 홀 및 기타 패턴을 프린팅하기 위한 시스템, 마스크및 방법
US7552416B2 (en) 2005-02-28 2009-06-23 Yuri Granik Calculation system for inverse masks
US7564017B2 (en) 2005-06-03 2009-07-21 Brion Technologies, Inc. System and method for characterizing aerial image quality in a lithography system
CN101297390B (zh) 2005-09-13 2011-04-20 朗明科技公司 用于光刻法的系统、掩模和方法
US7921385B2 (en) * 2005-10-03 2011-04-05 Luminescent Technologies Inc. Mask-pattern determination using topology types
US7788627B2 (en) * 2005-10-03 2010-08-31 Luminescent Technologies, Inc. Lithography verification using guard bands
WO2007041701A2 (en) 2005-10-04 2007-04-12 Luminescent Technologies, Inc. Mask-patterns including intentional breaks
WO2007044557A2 (en) 2005-10-06 2007-04-19 Luminescent Technologies, Inc. System, masks, and methods for photomasks optimized with approximate and accurate merit functions

Also Published As

Publication number Publication date
EP1925020A2 (en) 2008-05-28
EP1925020A4 (en) 2014-01-01
KR20080070623A (ko) 2008-07-30
TWI398721B (zh) 2013-06-11
US7707541B2 (en) 2010-04-27
KR101330344B1 (ko) 2013-11-15
WO2007033362A2 (en) 2007-03-22
TW200731001A (en) 2007-08-16
WO2007033362A3 (en) 2007-09-27
US20070184357A1 (en) 2007-08-09
CN101297390B (zh) 2011-04-20
CN101297390A (zh) 2008-10-29
JP2009508161A (ja) 2009-02-26

Similar Documents

Publication Publication Date Title
JP5405109B2 (ja) フォトリソグラフィのためのシステム、マスク、及び方法
US7703049B2 (en) System, masks, and methods for photomasks optimized with approximate and accurate merit functions
US7698665B2 (en) Systems, masks, and methods for manufacturable masks using a functional representation of polygon pattern
US7480889B2 (en) Optimized photomasks for photolithography
US8056021B2 (en) Method for time-evolving rectilinear contours representing photo masks
JP4832088B2 (ja) 改善されたアシストフィーチャ構造をマスクレイアウトにおいて決定するための方法および装置
US8473878B2 (en) Lithographically enhanced edge determination
US20110209107A1 (en) Mask-layout creating method, apparatus therefor, and computer program product
CN101836161B (zh) 用于确定掩模图案和写图案的技术
JP2002261004A (ja) 照明及びレチクルの最適化により、印刷ラインの形状歪みを最小化するシステム及び方法
WO2015023610A1 (en) An edge-based full chip mask topography modeling
US20070011648A1 (en) Fast systems and methods for calculating electromagnetic fields near photomasks
Bork et al. Curvilinear Mask Process Correction-status quo and outlook
WO2019217386A1 (en) Application of freeform mrc to sraf optimization based on ilt mask optimization
US20230197460A1 (en) Image-based semiconductor device patterning method using deep neural network
CN114021435A (zh) 一种极紫外光掩模衍射近场计算模型的建立方法、装置及电子设备
KR20240031314A (ko) 소스 마스크 최적화 및 타겟 최적화를 위한 패턴 선택

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090914

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090914

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120820

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121120

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121128

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130218

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131015

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131030

R150 Certificate of patent or registration of utility model

Ref document number: 5405109

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250