KR101311661B1 - 칩용 수지막 형성용 시트 및 반도체칩의 제조 방법 - Google Patents

칩용 수지막 형성용 시트 및 반도체칩의 제조 방법 Download PDF

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Publication number
KR101311661B1
KR101311661B1 KR1020127025765A KR20127025765A KR101311661B1 KR 101311661 B1 KR101311661 B1 KR 101311661B1 KR 1020127025765 A KR1020127025765 A KR 1020127025765A KR 20127025765 A KR20127025765 A KR 20127025765A KR 101311661 B1 KR101311661 B1 KR 101311661B1
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resin film
film forming
forming layer
copper ion
sheet
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Korean (ko)
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KR20130009802A (ko
Inventor
토모노리 시노다
요지 와카야마
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린텍 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/144—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations comprising foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/48—Fillings including materials for absorbing or reacting with moisture or other undesired substances
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
KR1020127025765A 2010-03-31 2011-03-30 칩용 수지막 형성용 시트 및 반도체칩의 제조 방법 Active KR101311661B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010083690A JP5023179B2 (ja) 2010-03-31 2010-03-31 チップ用樹脂膜形成用シートおよび半導体チップの製造方法
JPJP-P-2010-083690 2010-03-31
PCT/JP2011/057969 WO2011125711A1 (ja) 2010-03-31 2011-03-30 チップ用樹脂膜形成用シートおよび半導体チップの製造方法

Publications (2)

Publication Number Publication Date
KR20130009802A KR20130009802A (ko) 2013-01-23
KR101311661B1 true KR101311661B1 (ko) 2013-09-25

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KR1020127025765A Active KR101311661B1 (ko) 2010-03-31 2011-03-30 칩용 수지막 형성용 시트 및 반도체칩의 제조 방법

Country Status (6)

Country Link
US (2) US8674349B2 (https=)
JP (1) JP5023179B2 (https=)
KR (1) KR101311661B1 (https=)
CN (2) CN103903980B (https=)
TW (1) TWI413588B (https=)
WO (1) WO2011125711A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160093567A (ko) 2015-01-29 2016-08-08 주식회사 엘지화학 고분자 필름의 금속 이온 투과도 측정 방법 및 고분자 필름의 금속 이온 투과도 측정 장치
KR20160093566A (ko) 2015-01-29 2016-08-08 주식회사 엘지화학 고분자 필름의 금속 이온 투과도 측정 방법 및 고분자 필름의 금속 이온 투과도 측정 장치

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5023179B2 (ja) * 2010-03-31 2012-09-12 リンテック株式会社 チップ用樹脂膜形成用シートおよび半導体チップの製造方法
JP2012241063A (ja) * 2011-05-17 2012-12-10 Nitto Denko Corp 半導体装置製造用の接着シート
JP2012241157A (ja) * 2011-05-23 2012-12-10 Nitto Denko Corp 半導体装置製造用の接着剤組成物、及び、半導体装置製造用の接着シート
JP5804820B2 (ja) * 2011-07-25 2015-11-04 日東電工株式会社 半導体装置製造用の接着シート、半導体装置製造用の接着シートを有する半導体装置、及び、半導体装置の製造方法
JP5975621B2 (ja) 2011-11-02 2016-08-23 リンテック株式会社 ダイシングシートおよび半導体チップの製造方法
CN104160491B (zh) * 2012-03-07 2018-05-11 琳得科株式会社 芯片用树脂膜形成用片材
KR102140470B1 (ko) * 2012-11-30 2020-08-03 린텍 가부시키가이샤 칩용 수지막 형성용 시트 및 반도체 장치의 제조 방법
JP6042251B2 (ja) * 2013-03-28 2016-12-14 リンテック株式会社 粘着シート
CN106030763B (zh) * 2014-03-28 2019-06-28 琳得科株式会社 保护膜形成用膜及带保护膜的半导体芯片的制造方法
WO2015150848A1 (fr) 2014-03-31 2015-10-08 Arcelormittal Investigación Y Desarrollo Sl Procede de fabrication a haute productivite de pieces d'acier revêtues et durcies a la presse
EP3422399B1 (en) * 2017-06-29 2024-07-31 Infineon Technologies AG Method for producing a device for protecting a semiconductor module and semiconductor module comprising said device
JP6934989B2 (ja) * 2019-08-29 2021-09-15 住友化学株式会社 有機光電変換材料
JP7757672B2 (ja) * 2021-09-14 2025-10-22 株式会社レゾナック 樹脂フィルムの重金属イオン透過性の評価方法及び接着フィルム

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KR100681665B1 (ko) * 2001-03-21 2007-02-09 린텍 가부시키가이샤 칩용 보호막 형성용 시트 및 반도체 칩의 제조 방법
KR20080095283A (ko) * 2006-02-16 2008-10-28 닛토덴코 가부시키가이샤 반도체 장치의 제조 방법
KR20100061390A (ko) * 2008-11-28 2010-06-07 린텍 가부시키가이샤 반도체 칩 적층체 및 반도체 칩 적층용 접착제 조성물

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JP4943636B2 (ja) 2004-03-25 2012-05-30 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP2005322738A (ja) * 2004-05-07 2005-11-17 Toshiba Corp 半導体装置の製造方法
JP2005322728A (ja) * 2004-05-07 2005-11-17 Canon Inc 露光装置
JP4961761B2 (ja) * 2005-02-09 2012-06-27 東レ株式会社 半導体装置用接着剤組成物およびそれを用いた半導体装置用接着剤シート、半導体接続用基板ならびに半導体装置
JP5670005B2 (ja) 2006-03-06 2015-02-18 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
JP5023179B2 (ja) * 2010-03-31 2012-09-12 リンテック株式会社 チップ用樹脂膜形成用シートおよび半導体チップの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100681665B1 (ko) * 2001-03-21 2007-02-09 린텍 가부시키가이샤 칩용 보호막 형성용 시트 및 반도체 칩의 제조 방법
KR20080095283A (ko) * 2006-02-16 2008-10-28 닛토덴코 가부시키가이샤 반도체 장치의 제조 방법
KR20100061390A (ko) * 2008-11-28 2010-06-07 린텍 가부시키가이샤 반도체 칩 적층체 및 반도체 칩 적층용 접착제 조성물

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160093567A (ko) 2015-01-29 2016-08-08 주식회사 엘지화학 고분자 필름의 금속 이온 투과도 측정 방법 및 고분자 필름의 금속 이온 투과도 측정 장치
KR20160093566A (ko) 2015-01-29 2016-08-08 주식회사 엘지화학 고분자 필름의 금속 이온 투과도 측정 방법 및 고분자 필름의 금속 이온 투과도 측정 장치
US10324016B2 (en) 2015-01-29 2019-06-18 Lg Chem, Ltd. Method for measuring metal ion permeability of polymer film and device for measuring metal ion permeability of polymer film
US10338020B2 (en) 2015-01-29 2019-07-02 Lg Chem, Ltd. Method for measuring metal ion permeability of polymer film and device for measuring metal ion permeability of polymer film

Also Published As

Publication number Publication date
WO2011125711A1 (ja) 2011-10-13
US8674349B2 (en) 2014-03-18
TWI413588B (zh) 2013-11-01
US20140141570A1 (en) 2014-05-22
US20130011998A1 (en) 2013-01-10
US8735881B1 (en) 2014-05-27
CN103903980B (zh) 2017-01-18
JP2011216677A (ja) 2011-10-27
CN103903980A (zh) 2014-07-02
JP5023179B2 (ja) 2012-09-12
TW201144063A (en) 2011-12-16
CN102834903A (zh) 2012-12-19
CN102834903B (zh) 2014-10-22
KR20130009802A (ko) 2013-01-23

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