KR101298425B1 - 고성능 션트 커패시터를 구비하는 ｒｆ 전력 트랜지스터 디바이스 및 그 방법 - Google Patents

고성능 션트 커패시터를 구비하는 ｒｆ 전력 트랜지스터 디바이스 및 그 방법 Download PDF

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KR101298425B1
KR101298425B1 KR1020087030225A KR20087030225A KR101298425B1 KR 101298425 B1 KR101298425 B1 KR 101298425B1 KR 1020087030225 A KR1020087030225 A KR 1020087030225A KR 20087030225 A KR20087030225 A KR 20087030225A KR 101298425 B1 KR101298425 B1 KR 101298425B1
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shunt capacitor
top plate
shield
capacitor
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KR20090028519A (ko
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시아오웨이 렌
다니엘 제이. 라미
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020087030225A 2006-06-12 2007-06-12 고성능 션트 커패시터를 구비하는 ｒｆ 전력 트랜지스터 디바이스 및 그 방법 Active KR101298425B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US80452606P 2006-06-12 2006-06-12
US60/804,526 2006-06-12
US11/760,775 US7508021B2 (en) 2006-06-12 2007-06-10 RF power transistor device with high performance shunt capacitor and method thereof
US11/760,775 2007-06-10
PCT/US2007/070930 WO2007146899A2 (en) 2006-06-12 2007-06-12 Rf power transistor device with high performance shunt capacitor and method thereof

Publications (2)

Publication Number Publication Date
KR20090028519A KR20090028519A (ko) 2009-03-18
KR101298425B1 true KR101298425B1 (ko) 2013-08-20

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KR1020087030225A Active KR101298425B1 (ko) 2006-06-12 2007-06-12 고성능 션트 커패시터를 구비하는 ｒｆ 전력 트랜지스터 디바이스 및 그 방법

Country Status (5)

Country Link
US (1) US7508021B2 (enExample)
JP (1) JP2009540620A (enExample)
KR (1) KR101298425B1 (enExample)
TW (1) TWI459538B (enExample)
WO (1) WO2007146899A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169895A (zh) * 2010-02-25 2011-08-31 上海北京大学微电子研究院 射频金属-氧化物-半导体场效应晶体管
US9502886B2 (en) * 2013-03-15 2016-11-22 Taiwan Semiconductor Manufacturing Company Limited MiM capacitor
US9899967B1 (en) * 2017-02-01 2018-02-20 Infineon Technologies Ag Embedded harmonic termination on high power RF transistor
US11929317B2 (en) 2020-12-07 2024-03-12 Macom Technology Solutions Holdings, Inc. Capacitor networks for harmonic control in power devices
US12230614B2 (en) 2021-12-17 2025-02-18 Macom Technology Solutions Holdings, Inc. Multi-typed integrated passive device (IPD) components and devices and processes implementing the same
US12183669B2 (en) * 2021-12-17 2024-12-31 Macom Technology Solutions Holdings, Inc. Configurable metal—insulator—metal capacitor and devices
US12417966B2 (en) 2021-12-17 2025-09-16 Macom Technology Solutions Holdings, Inc. IPD components having SiC substrates and devices and processes implementing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218239B1 (en) 1998-11-17 2001-04-17 United Microelectronics Corp. Manufacturing method of a bottom plate
US20030020107A1 (en) 2001-07-25 2003-01-30 Motorola, Inc. Structure and method for fabricating semiconductor capacitor structures utilizing the formation of a compliant structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5351163A (en) * 1992-12-30 1994-09-27 Westinghouse Electric Corporation High Q monolithic MIM capacitor
JPH0864764A (ja) * 1994-08-25 1996-03-08 Nippon Motorola Ltd ユニットキャパシタ
JP3874210B2 (ja) * 1996-09-11 2007-01-31 株式会社デンソー モノリシックマイクロ波集積回路
US6208500B1 (en) * 1998-11-25 2001-03-27 Microchip Technology Incorporated High quality factor capacitor
US6181200B1 (en) * 1999-04-09 2001-01-30 Integra Technologies, Inc. Radio frequency power device
JP2004221317A (ja) * 2003-01-15 2004-08-05 Renesas Technology Corp 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6218239B1 (en) 1998-11-17 2001-04-17 United Microelectronics Corp. Manufacturing method of a bottom plate
US20030020107A1 (en) 2001-07-25 2003-01-30 Motorola, Inc. Structure and method for fabricating semiconductor capacitor structures utilizing the formation of a compliant structure

Also Published As

Publication number Publication date
JP2009540620A (ja) 2009-11-19
TW200812067A (en) 2008-03-01
KR20090028519A (ko) 2009-03-18
WO2007146899A2 (en) 2007-12-21
US20070297120A1 (en) 2007-12-27
TWI459538B (zh) 2014-11-01
US7508021B2 (en) 2009-03-24
WO2007146899A3 (en) 2008-07-24

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