KR101296701B1 - 감소된 패키지 크로스-토크 및 손실을 갖는 반도체디바이스 - Google Patents

감소된 패키지 크로스-토크 및 손실을 갖는 반도체디바이스 Download PDF

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Publication number
KR101296701B1
KR101296701B1 KR1020087009842A KR20087009842A KR101296701B1 KR 101296701 B1 KR101296701 B1 KR 101296701B1 KR 1020087009842 A KR1020087009842 A KR 1020087009842A KR 20087009842 A KR20087009842 A KR 20087009842A KR 101296701 B1 KR101296701 B1 KR 101296701B1
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South Korea
Prior art keywords
die
buffer
buffer region
dielectric constant
capsule
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Expired - Fee Related
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KR1020087009842A
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English (en)
Korean (ko)
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KR20080065980A (ko
Inventor
브라이언 더블유. 콘디
마리 마하링앰
마헤쉬 케이. 샤
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프리스케일 세미컨덕터, 인크.
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Publication of KR20080065980A publication Critical patent/KR20080065980A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
KR1020087009842A 2005-10-24 2006-10-18 감소된 패키지 크로스-토크 및 손실을 갖는 반도체디바이스 Expired - Fee Related KR101296701B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/257,802 2005-10-24
US11/257,802 US7435625B2 (en) 2005-10-24 2005-10-24 Semiconductor device with reduced package cross-talk and loss
PCT/US2006/040869 WO2007050420A2 (en) 2005-10-24 2006-10-18 Semiconductor device with reduced package cross-talk and loss

Publications (2)

Publication Number Publication Date
KR20080065980A KR20080065980A (ko) 2008-07-15
KR101296701B1 true KR101296701B1 (ko) 2013-08-20

Family

ID=37968396

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087009842A Expired - Fee Related KR101296701B1 (ko) 2005-10-24 2006-10-18 감소된 패키지 크로스-토크 및 손실을 갖는 반도체디바이스

Country Status (5)

Country Link
US (2) US7435625B2 (https=)
JP (1) JP2009513019A (https=)
KR (1) KR101296701B1 (https=)
TW (1) TWI414046B (https=)
WO (1) WO2007050420A2 (https=)

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DE102009026804A1 (de) * 2009-06-08 2010-12-09 Robert Bosch Gmbh Verfahren zur Herstellung elektronischer Bauteile
JP5018909B2 (ja) * 2009-06-30 2012-09-05 株式会社デンソー 半導体装置
JP2011054806A (ja) * 2009-09-02 2011-03-17 Renesas Electronics Corp 半導体装置およびその製造方法
EP2564527B1 (en) * 2010-04-28 2017-11-15 Huawei Technologies Co., Ltd. Cross-talk reduction in a bidirectional optoelectronic device
JP5532419B2 (ja) * 2010-06-17 2014-06-25 富士電機株式会社 絶縁材、金属ベース基板および半導体モジュール並びにこれらの製造方法
CN102714542B (zh) * 2010-06-25 2015-08-19 Hoya美国公司 双向光电子设备中的串扰减小
KR20120000805A (ko) * 2010-06-28 2012-01-04 삼성전자주식회사 반도체 패키지의 몰딩 방법
WO2012033724A2 (en) * 2010-09-06 2012-03-15 Hoya Corporation Usa Cross-talk reduction in a bidirectional optoelectronic device
WO2013063410A1 (en) 2011-10-28 2013-05-02 Hoya Corporation Usa Optical waveguide splitter on a waveguide substrate for attenuating a light source
AU2013240253B2 (en) 2012-03-27 2015-12-10 3M Innovative Properties Company Composite particles, methods of making, and articles including the same
KR101905893B1 (ko) * 2012-06-13 2018-10-08 에스케이하이닉스 주식회사 복수의 유전층을 포함하는 임베디드 패키지 및 제조 방법
US9226428B2 (en) * 2012-06-28 2015-12-29 Intel Corporation High heat capacity electronic components and methods for fabricating
US20140103508A1 (en) * 2012-10-11 2014-04-17 Texas Instruments Incorporated Encapsulating package for an integrated circuit
EP2731130A1 (en) * 2012-11-12 2014-05-14 Nxp B.V. Cavity package for an integrated circuit
US9312231B2 (en) * 2013-10-31 2016-04-12 Freescale Semiconductor, Inc. Method and apparatus for high temperature semiconductor device packages and structures using a low temperature process
US9461005B2 (en) * 2015-02-12 2016-10-04 Ampleon Netherlands B.V. RF package with non-gaseous dielectric material
US10431526B2 (en) 2017-10-09 2019-10-01 Cree, Inc. Rivetless lead fastening for a semiconductor package
US10897824B2 (en) * 2017-10-30 2021-01-19 Baker Hughes, A Ge Company, Llc Encapsulation of downhole microelectronics and method the same
EP3706164A4 (en) * 2017-10-31 2021-08-11 Nagase ChemteX Corporation Method for producing package structure and sheet used in same
US10446414B2 (en) * 2017-12-22 2019-10-15 Texas Instruments Incorporated Semiconductor package with filler particles in a mold compound
US10672703B2 (en) 2018-09-26 2020-06-02 Nxp Usa, Inc. Transistor with shield structure, packaged device, and method of fabrication

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US6455606B1 (en) * 1997-04-02 2002-09-24 Sanyo Chemical Industries, Ltd. Polyurethane foam, process for producing the same, and foam forming composition
US6794481B2 (en) * 2001-06-28 2004-09-21 Mitsubishi Gas Chemical Company, Inc. Bifunctional phenylene ether oligomer, its derivatives, its use and process for the production thereof

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US5785789A (en) * 1993-03-18 1998-07-28 Digital Equipment Corporation Low dielectric constant microsphere filled layers for multilayer electrical structures
US6455606B1 (en) * 1997-04-02 2002-09-24 Sanyo Chemical Industries, Ltd. Polyurethane foam, process for producing the same, and foam forming composition
US6794481B2 (en) * 2001-06-28 2004-09-21 Mitsubishi Gas Chemical Company, Inc. Bifunctional phenylene ether oligomer, its derivatives, its use and process for the production thereof

Also Published As

Publication number Publication date
WO2007050420A3 (en) 2007-08-30
TWI414046B (zh) 2013-11-01
US7701074B2 (en) 2010-04-20
WO2007050420A2 (en) 2007-05-03
US20070090542A1 (en) 2007-04-26
JP2009513019A (ja) 2009-03-26
TW200729427A (en) 2007-08-01
US7435625B2 (en) 2008-10-14
KR20080065980A (ko) 2008-07-15
US20090001614A1 (en) 2009-01-01

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