KR101276487B1 - 웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법 - Google Patents

웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법 Download PDF

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KR101276487B1
KR101276487B1 KR1020120110607A KR20120110607A KR101276487B1 KR 101276487 B1 KR101276487 B1 KR 101276487B1 KR 1020120110607 A KR1020120110607 A KR 1020120110607A KR 20120110607 A KR20120110607 A KR 20120110607A KR 101276487 B1 KR101276487 B1 KR 101276487B1
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KR
South Korea
Prior art keywords
layer
wafer
photolysis
device wafer
carrier wafer
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KR1020120110607A
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English (en)
Korean (ko)
Inventor
채성원
서영득
안흥기
태경섭
김광무
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주식회사 이녹스
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Priority to KR1020120110607A priority Critical patent/KR101276487B1/ko
Application granted granted Critical
Publication of KR101276487B1 publication Critical patent/KR101276487B1/ko
Priority to CN201310462164.1A priority patent/CN103715126A/zh
Priority to TW102136063A priority patent/TW201415583A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020120110607A 2012-10-05 2012-10-05 웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법 KR101276487B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020120110607A KR101276487B1 (ko) 2012-10-05 2012-10-05 웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법
CN201310462164.1A CN103715126A (zh) 2012-10-05 2013-09-30 晶片叠层体、器件晶片及承载晶片的粘合及剥离处理方法
TW102136063A TW201415583A (zh) 2012-10-05 2013-10-04 晶圓疊層體、元件晶圓及承載晶圓的黏合及剝離處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120110607A KR101276487B1 (ko) 2012-10-05 2012-10-05 웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법

Publications (1)

Publication Number Publication Date
KR101276487B1 true KR101276487B1 (ko) 2013-06-18

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KR1020120110607A KR101276487B1 (ko) 2012-10-05 2012-10-05 웨이퍼 적층체 및 디바이스 웨이퍼 및 캐리어 웨이퍼의 본딩 및 디본딩 처리 방법

Country Status (3)

Country Link
KR (1) KR101276487B1 (zh)
CN (1) CN103715126A (zh)
TW (1) TW201415583A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101532756B1 (ko) * 2014-03-28 2015-07-01 주식회사 이녹스 열경화성 반도체 웨이퍼용 임시접착필름, 이를 포함하는 적층체 및 적층체 분리방법
KR20160023916A (ko) * 2013-07-30 2016-03-03 마이크론 테크놀로지, 인크 반도체 소자들을 처리하기 위한 방법 및 구조
KR101617316B1 (ko) * 2013-08-14 2016-05-02 코스텍시스템(주) 디바이스 웨이퍼와 캐리어 웨이퍼의 본딩/디본딩 방법 및 본딩/디본딩 장치
KR101811920B1 (ko) * 2014-05-08 2017-12-22 도오꾜오까고오교 가부시끼가이샤 지지체 분리 방법
US11417559B2 (en) 2020-05-04 2022-08-16 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor package

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6457223B2 (ja) * 2014-09-16 2019-01-23 東芝メモリ株式会社 基板分離方法および半導体製造装置
JP6524972B2 (ja) * 2015-09-28 2019-06-05 Jsr株式会社 対象物の処理方法、仮固定用組成物、半導体装置及びその製造方法
US20200243588A1 (en) * 2016-05-30 2020-07-30 China Wafer Level Csp Co., Ltd. Packaging structure and packaging method
US10074626B2 (en) * 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
CN107611075A (zh) * 2017-09-04 2018-01-19 华进半导体封装先导技术研发中心有限公司 一种临时键合结构及临时键合方法
TWI755996B (zh) * 2020-12-24 2022-02-21 天虹科技股份有限公司 用以產生均勻溫度的晶圓承載盤及應用該晶圓承載盤的薄膜沉積裝置
CN115346437B (zh) * 2022-08-03 2023-07-25 武汉华星光电半导体显示技术有限公司 显示模组及显示装置

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KR20000019536A (ko) * 1998-09-12 2000-04-15 구자홍 플렉시블 인쇄 회로기판의 제조방법 및 그 방법으로 생산한플렉시블 인쇄 회로 기판
KR20050004904A (ko) * 2002-06-03 2005-01-12 쓰리엠 이노베이티브 프로퍼티즈 컴파니 적층체 및 이 적층체를 사용하여 초박형 기판을 제조하는방법 및 장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4514409B2 (ja) * 2003-02-20 2010-07-28 日東電工株式会社 半導体ウエハの仮固定方法及び電子部品、回路基板
US7785938B2 (en) * 2006-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd Semiconductor integrated circuit, manufacturing method thereof, and semiconductor device using semiconductor integrated circuit
DE202009018064U1 (de) * 2008-01-24 2010-12-02 Brewer Science, Inc. Gegenstände beim reversiblen Anbringen eines Vorrichtungswafers an einem Trägersubstrat

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000019536A (ko) * 1998-09-12 2000-04-15 구자홍 플렉시블 인쇄 회로기판의 제조방법 및 그 방법으로 생산한플렉시블 인쇄 회로 기판
KR20050004904A (ko) * 2002-06-03 2005-01-12 쓰리엠 이노베이티브 프로퍼티즈 컴파니 적층체 및 이 적층체를 사용하여 초박형 기판을 제조하는방법 및 장치

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160023916A (ko) * 2013-07-30 2016-03-03 마이크론 테크놀로지, 인크 반도체 소자들을 처리하기 위한 방법 및 구조
KR101720474B1 (ko) 2013-07-30 2017-03-27 마이크론 테크놀로지, 인크 반도체 소자들을 처리하기 위한 방법 및 구조
KR101617316B1 (ko) * 2013-08-14 2016-05-02 코스텍시스템(주) 디바이스 웨이퍼와 캐리어 웨이퍼의 본딩/디본딩 방법 및 본딩/디본딩 장치
KR101532756B1 (ko) * 2014-03-28 2015-07-01 주식회사 이녹스 열경화성 반도체 웨이퍼용 임시접착필름, 이를 포함하는 적층체 및 적층체 분리방법
WO2015147509A1 (ko) * 2014-03-28 2015-10-01 주식회사 이녹스 열경화성 반도체 웨이퍼용 임시접착필름, 이를 포함하는 적층체 및 적층체 분리방법
KR101811920B1 (ko) * 2014-05-08 2017-12-22 도오꾜오까고오교 가부시끼가이샤 지지체 분리 방법
US11417559B2 (en) 2020-05-04 2022-08-16 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor package

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Publication number Publication date
TW201415583A (zh) 2014-04-16
CN103715126A (zh) 2014-04-09

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