KR101271502B1 - 이온 빔 각 확산 제어를 위한 기술 - Google Patents
이온 빔 각 확산 제어를 위한 기술 Download PDFInfo
- Publication number
- KR101271502B1 KR101271502B1 KR1020077031022A KR20077031022A KR101271502B1 KR 101271502 B1 KR101271502 B1 KR 101271502B1 KR 1020077031022 A KR1020077031022 A KR 1020077031022A KR 20077031022 A KR20077031022 A KR 20077031022A KR 101271502 B1 KR101271502 B1 KR 101271502B1
- Authority
- KR
- South Korea
- Prior art keywords
- incidence
- angles
- ion beam
- ion
- substrate surface
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1477—Scanning means electrostatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
- H01J2237/1507—Tilting or rocking beam around an axis substantially at an angle to optical axis dynamically, e.g. to obtain same impinging angle on whole area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/3045—Deflection calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/145,949 US7868305B2 (en) | 2005-03-16 | 2005-06-07 | Technique for ion beam angle spread control |
US11/145,949 | 2005-06-07 | ||
PCT/US2006/022164 WO2006133309A2 (fr) | 2005-06-07 | 2006-06-07 | Technique de commande de l'étalement angulaire de faisceaux d'ions |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080019260A KR20080019260A (ko) | 2008-03-03 |
KR101271502B1 true KR101271502B1 (ko) | 2013-06-05 |
Family
ID=37401247
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077031022A KR101271502B1 (ko) | 2005-06-07 | 2006-06-07 | 이온 빔 각 확산 제어를 위한 기술 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7868305B2 (fr) |
JP (1) | JP5215846B2 (fr) |
KR (1) | KR101271502B1 (fr) |
CN (1) | CN101189696B (fr) |
TW (1) | TWI390581B (fr) |
WO (1) | WO2006133309A2 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7394078B2 (en) * | 2005-03-16 | 2008-07-01 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion beam angle spread control for advanced applications |
US7348576B2 (en) * | 2005-03-16 | 2008-03-25 | Varian Semiconductor Equipment Associates, Inc. | Technique for ion beam angle process control |
US7391038B2 (en) * | 2006-03-21 | 2008-06-24 | Varian Semiconductor Equipment Associates, Inc. | Technique for isocentric ion beam scanning |
US7883909B2 (en) * | 2006-12-28 | 2011-02-08 | Texas Instruments Incorporated | Method to measure ion beam angle |
US20080245957A1 (en) * | 2007-04-03 | 2008-10-09 | Atul Gupta | Tuning an ion implanter for optimal performance |
CN101838797B (zh) * | 2009-12-18 | 2012-07-04 | 上海凯世通半导体有限公司 | 离子注入方法 |
US8664100B2 (en) | 2010-07-07 | 2014-03-04 | Varian Semiconductor Equipment Associates, Inc. | Manufacturing high efficiency solar cell with directional doping |
US20130164454A1 (en) * | 2011-04-07 | 2013-06-27 | Seagate Technology Llc | Methods of forming layers |
US9103540B2 (en) | 2011-04-21 | 2015-08-11 | Optalite Technologies, Inc. | High efficiency LED lighting system with thermal diffusion |
US9275833B2 (en) | 2012-02-03 | 2016-03-01 | Seagate Technology Llc | Methods of forming layers |
US9159810B2 (en) * | 2012-08-22 | 2015-10-13 | Advanced Ion Beam Technology, Inc. | Doping a non-planar semiconductor device |
JP6271235B2 (ja) | 2013-01-24 | 2018-01-31 | キヤノンアネルバ株式会社 | フィンfetの製造方法およびデバイスの製造方法 |
US9340870B2 (en) | 2013-01-25 | 2016-05-17 | Advanced Ion Beam Technology, Inc. | Magnetic field fluctuation for beam smoothing |
US9280989B2 (en) | 2013-06-21 | 2016-03-08 | Seagate Technology Llc | Magnetic devices including near field transducer |
JP6253524B2 (ja) * | 2014-06-13 | 2017-12-27 | 住友重機械イオンテクノロジー株式会社 | ビーム照射装置及びビーム照射方法 |
US20160002784A1 (en) * | 2014-07-07 | 2016-01-07 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for depositing a monolayer on a three dimensional structure |
US20180315605A1 (en) * | 2017-04-28 | 2018-11-01 | Advanced Ion Beam Technology, Inc. | Method for Ion Implantation |
JP2022512366A (ja) | 2018-12-17 | 2022-02-03 | アプライド マテリアルズ インコーポレイテッド | 傾斜回折格子のローリングkベクトルの調整 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US5132544A (en) * | 1990-08-29 | 1992-07-21 | Nissin Electric Company Ltd. | System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62115638A (ja) * | 1985-11-14 | 1987-05-27 | Nissin Electric Co Ltd | イオン注入装置 |
JPS6489136A (en) * | 1987-09-30 | 1989-04-03 | Toshiba Corp | Ion implanting apparatus and ion implanting method |
JPH0215547A (ja) * | 1988-07-01 | 1990-01-19 | Fujitsu Ltd | 半導体基板へのイオン注入装置 |
JPH0834194B2 (ja) | 1989-06-30 | 1996-03-29 | 松下電器産業株式会社 | イオン注入方法及び本方法を用いた半導体装置の製造方法 |
JPH03155616A (ja) * | 1989-11-14 | 1991-07-03 | Sumitomo Electric Ind Ltd | イオン注入方法 |
GB9005204D0 (en) * | 1990-03-08 | 1990-05-02 | Superion Ltd | Apparatus and methods relating to scanning ion beams |
US5892235A (en) * | 1996-05-15 | 1999-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
US6229148B1 (en) | 1997-08-11 | 2001-05-08 | Micron Technology, Inc. | Ion implantation with programmable energy, angle, and beam current |
US6791094B1 (en) | 1999-06-24 | 2004-09-14 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for determining beam parallelism and direction |
US6633046B1 (en) * | 2000-04-19 | 2003-10-14 | Applied Materials, Inc. | Method and apparatus for detecting that two moveable members are correctly positioned relatively to one another |
US6437350B1 (en) | 2000-08-28 | 2002-08-20 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting beam parallelism in ion implanters |
WO2002058103A2 (fr) | 2001-01-17 | 2002-07-25 | Varian Semiconductor Equipment Associates, Inc. | Angle d'incidence d'un faisceau d'ions et moniteur de divergence du faisceau in situ |
JP2003133252A (ja) * | 2001-10-26 | 2003-05-09 | Semiconductor Energy Lab Co Ltd | ビームの集束方法およびドーピング装置、並びに半導体装置の作製方法 |
DE10245608A1 (de) | 2002-09-30 | 2004-04-15 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterelement mit verbesserten Halo-Strukturen und Verfahren zur Herstellung der Halo-Strukturen eines Halbleiterelements |
US6807519B2 (en) * | 2003-01-13 | 2004-10-19 | Micron Technology, Inc. | Methods of forming radiation-patterning tools; carrier waves and computer readable media |
US6806479B1 (en) | 2003-08-13 | 2004-10-19 | Advanced Ion Beam Technology, Inc. | Apparatus and method for reducing implant angle variations across a large wafer for a batch disk |
US7105839B2 (en) | 2003-10-15 | 2006-09-12 | White Nicholas R | Method and fine-control collimator for accurate collimation and precise parallel alignment of scanned ion beams |
-
2005
- 2005-06-07 US US11/145,949 patent/US7868305B2/en active Active
-
2006
- 2006-06-07 WO PCT/US2006/022164 patent/WO2006133309A2/fr active Application Filing
- 2006-06-07 JP JP2008515884A patent/JP5215846B2/ja active Active
- 2006-06-07 TW TW095120176A patent/TWI390581B/zh active
- 2006-06-07 KR KR1020077031022A patent/KR101271502B1/ko active IP Right Grant
- 2006-06-07 CN CN2006800198849A patent/CN101189696B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4847504A (en) * | 1983-08-15 | 1989-07-11 | Applied Materials, Inc. | Apparatus and methods for ion implantation |
US5132544A (en) * | 1990-08-29 | 1992-07-21 | Nissin Electric Company Ltd. | System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning |
Also Published As
Publication number | Publication date |
---|---|
WO2006133309A3 (fr) | 2007-11-15 |
TW200727324A (en) | 2007-07-16 |
KR20080019260A (ko) | 2008-03-03 |
JP5215846B2 (ja) | 2013-06-19 |
CN101189696A (zh) | 2008-05-28 |
WO2006133309A2 (fr) | 2006-12-14 |
JP2008546163A (ja) | 2008-12-18 |
TWI390581B (zh) | 2013-03-21 |
US20060208202A1 (en) | 2006-09-21 |
US7868305B2 (en) | 2011-01-11 |
CN101189696B (zh) | 2011-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101271502B1 (ko) | 이온 빔 각 확산 제어를 위한 기술 | |
KR101210835B1 (ko) | 이온 빔 각 처리 제어를 위한 기술 | |
US7394078B2 (en) | Technique for ion beam angle spread control for advanced applications | |
US7176470B1 (en) | Technique for high-efficiency ion implantation | |
TWI441232B (zh) | 離子束均勻度調整的方法以及系統 | |
KR101203834B1 (ko) | 이온 빔 주입 전류, 빔 스팟 폭 및 위치 조정 방법 | |
TWI696214B (zh) | 離子植入方法及離子植入裝置 | |
KR101937910B1 (ko) | 작업물 처리 방법 및 플라즈마 프로세싱 시스템 | |
US7253423B2 (en) | Technique for uniformity tuning in an ion implanter system | |
JP5257576B2 (ja) | イオンを加工物に注入するシステム及びその方法 | |
KR20130102597A (ko) | 이온 빔 튜닝 | |
KR101353011B1 (ko) | 선량 균일성 보정 기술 | |
US7279691B2 (en) | Ion implantation apparatus and method for implanting ions by using the same | |
US7391038B2 (en) | Technique for isocentric ion beam scanning | |
JP2005353537A (ja) | イオン注入装置 | |
JP5057008B2 (ja) | イオン注入装置 | |
JP2021026870A (ja) | ビームプロファイルの判定方法およびイオンビーム照射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AMND | Amendment | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20160330 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20170330 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20190430 Year of fee payment: 7 |