KR101270508B1 - 포토레지스트용 반사 방지 조성물 - Google Patents

포토레지스트용 반사 방지 조성물 Download PDF

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Publication number
KR101270508B1
KR101270508B1 KR1020077008453A KR20077008453A KR101270508B1 KR 101270508 B1 KR101270508 B1 KR 101270508B1 KR 1020077008453 A KR1020077008453 A KR 1020077008453A KR 20077008453 A KR20077008453 A KR 20077008453A KR 101270508 B1 KR101270508 B1 KR 101270508B1
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KR
South Korea
Prior art keywords
polymer
acid
glycoluril
groups
coating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020077008453A
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English (en)
Korean (ko)
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KR20070051363A (ko
Inventor
헹펭 우
슈지 딩-리
종 지앙
아리타카 히시다
지안후이 샨
홍 주앙
Original Assignee
에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
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Priority claimed from US10/941,221 external-priority patent/US20060057501A1/en
Application filed by 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 filed Critical 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Publication of KR20070051363A publication Critical patent/KR20070051363A/ko
Application granted granted Critical
Publication of KR101270508B1 publication Critical patent/KR101270508B1/ko
Assigned to 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 reassignment 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polyethers (AREA)
  • Polyesters Or Polycarbonates (AREA)
KR1020077008453A 2004-09-15 2005-09-15 포토레지스트용 반사 방지 조성물 Expired - Lifetime KR101270508B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/941,221 2004-09-15
US10/941,221 US20060057501A1 (en) 2004-09-15 2004-09-15 Antireflective compositions for photoresists
US11/159,002 2005-06-22
US11/159,002 US7691556B2 (en) 2004-09-15 2005-06-22 Antireflective compositions for photoresists
PCT/IB2005/003232 WO2006030320A2 (en) 2004-09-15 2005-09-15 Antireflective compositions for photoresists

Publications (2)

Publication Number Publication Date
KR20070051363A KR20070051363A (ko) 2007-05-17
KR101270508B1 true KR101270508B1 (ko) 2013-06-19

Family

ID=35797449

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077008453A Expired - Lifetime KR101270508B1 (ko) 2004-09-15 2005-09-15 포토레지스트용 반사 방지 조성물

Country Status (7)

Country Link
US (1) US7691556B2 (https=)
EP (1) EP1805561B1 (https=)
JP (2) JP5320624B2 (https=)
KR (1) KR101270508B1 (https=)
MY (1) MY142016A (https=)
TW (1) TWI408189B (https=)
WO (1) WO2006030320A2 (https=)

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US7355384B2 (en) * 2004-04-08 2008-04-08 International Business Machines Corporation Apparatus, method, and computer program product for monitoring and controlling a microcomputer using a single existing pin
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7754414B2 (en) * 2006-07-12 2010-07-13 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7741230B2 (en) * 2006-08-08 2010-06-22 Intel Corporation Highly-selective metal etchants
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US7416834B2 (en) 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US8026040B2 (en) * 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
KR20090114476A (ko) * 2007-02-26 2009-11-03 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. 실록산 중합체의 제조 방법
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US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
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KR100894218B1 (ko) * 2008-04-11 2009-04-22 금호석유화학 주식회사 흡광제 및 이를 포함하는 유기 반사 방지막 조성물
US8329387B2 (en) * 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR100997502B1 (ko) * 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US20100136477A1 (en) * 2008-12-01 2010-06-03 Ng Edward W Photosensitive Composition
US8551686B2 (en) 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US8445181B2 (en) 2010-06-03 2013-05-21 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8465902B2 (en) * 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
US8906590B2 (en) 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
DE102012223387A1 (de) * 2012-12-17 2014-06-18 Evonik Industries Ag Verwendung von substituierten Benzylalkoholen in reaktiven Epoxy-Systemen
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
KR102255221B1 (ko) * 2013-12-27 2021-05-24 롬엔드하스전자재료코리아유한회사 나노리소그래피용 유기 바닥 반사방지 코팅 조성물
US9274426B2 (en) 2014-04-29 2016-03-01 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating compositions and processes thereof
TWI592760B (zh) * 2014-12-30 2017-07-21 羅門哈斯電子材料韓國有限公司 與經外塗佈之光致抗蝕劑一起使用之塗層組合物
KR101982103B1 (ko) 2015-08-31 2019-05-27 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 오버코팅된 포토레지스트와 함께 사용하기 위한 코팅 조성물
TWI646397B (zh) 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
KR102477802B1 (ko) 2016-12-21 2022-12-15 메르크 파텐트 게엠베하 금속 산화물 나노입자 및 유기 중합체를 함유하는 스핀-온 물질의 조성물
CN111604236B (zh) * 2020-06-11 2022-07-08 沈阳芯源微电子设备股份有限公司 一种以taiko环结构为衬底的超薄型晶圆的涂胶方法
KR102675074B1 (ko) * 2020-11-20 2024-06-12 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
CN116082609B (zh) * 2021-11-05 2025-05-30 上海芯刻微材料技术有限责任公司 一种193nm湿法光刻胶用添加剂及其制备方法和应用
CN115808847B (zh) * 2023-01-18 2023-04-28 苏州润邦半导体材料科技有限公司 一种光刻胶底部的抗反射涂层树脂及其制备方法和应用
CN120883140A (zh) 2023-03-27 2025-10-31 日产化学株式会社 抗蚀剂下层膜形成用组合物
KR20250029581A (ko) * 2023-08-23 2025-03-05 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

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Also Published As

Publication number Publication date
WO2006030320A2 (en) 2006-03-23
KR20070051363A (ko) 2007-05-17
WO2006030320A3 (en) 2006-05-04
US20060058468A1 (en) 2006-03-16
JP2013152485A (ja) 2013-08-08
TW200626685A (en) 2006-08-01
TWI408189B (zh) 2013-09-11
JP5613950B2 (ja) 2014-10-29
MY142016A (en) 2010-08-16
JP2008513567A (ja) 2008-05-01
JP5320624B2 (ja) 2013-10-23
EP1805561A2 (en) 2007-07-11
US7691556B2 (en) 2010-04-06
EP1805561B1 (en) 2018-10-24

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