KR101258704B1 - 감광성 수지 조성물 - Google Patents

감광성 수지 조성물 Download PDF

Info

Publication number
KR101258704B1
KR101258704B1 KR1020060025991A KR20060025991A KR101258704B1 KR 101258704 B1 KR101258704 B1 KR 101258704B1 KR 1020060025991 A KR1020060025991 A KR 1020060025991A KR 20060025991 A KR20060025991 A KR 20060025991A KR 101258704 B1 KR101258704 B1 KR 101258704B1
Authority
KR
South Korea
Prior art keywords
group
poly
photosensitive resin
formula
modified silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060025991A
Other languages
English (en)
Korean (ko)
Other versions
KR20060103132A (ko
Inventor
데쯔오 나까니시
아끼라 야마모또
미찌히로 스고
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쓰 가가꾸 고교 가부시끼가이샤 filed Critical 신에쓰 가가꾸 고교 가부시끼가이샤
Publication of KR20060103132A publication Critical patent/KR20060103132A/ko
Application granted granted Critical
Publication of KR101258704B1 publication Critical patent/KR101258704B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06—Polymers provided for in subclass C08G
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Polyethers (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
KR1020060025991A 2005-03-23 2006-03-22 감광성 수지 조성물 Expired - Fee Related KR101258704B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00083940 2005-03-23
JP2005083940A JP4466855B2 (ja) 2005-03-23 2005-03-23 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20060103132A KR20060103132A (ko) 2006-09-28
KR101258704B1 true KR101258704B1 (ko) 2013-04-26

Family

ID=37203478

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060025991A Expired - Fee Related KR101258704B1 (ko) 2005-03-23 2006-03-22 감광성 수지 조성물

Country Status (3)

Country Link
JP (1) JP4466855B2 (enExample)
KR (1) KR101258704B1 (enExample)
TW (1) TW200702925A (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4967687B2 (ja) * 2007-01-29 2012-07-04 東レ株式会社 感光性シロキサン組成物、それから形成された硬化膜、および硬化膜を有する素子
JP5795212B2 (ja) * 2011-07-29 2015-10-14 信越化学工業株式会社 新規なブロック型オルガノポリシロキサン及びこれを含有する化粧料
JP6371666B2 (ja) * 2014-10-10 2018-08-08 株式会社カネカ ポジ型感光性組成物
EP3450480B1 (en) 2016-04-26 2025-03-26 Shin-Etsu Chemical Co., Ltd. Room-temperature-curable composition comprising silanol-group-terminated polyoxyalkylene compound, sealing material, and article
JP6870657B2 (ja) * 2018-05-17 2021-05-12 信越化学工業株式会社 感光性樹脂組成物、感光性ドライフィルム、及びパターン形成方法
JP7335217B2 (ja) * 2020-09-24 2023-08-29 信越化学工業株式会社 感光性樹脂組成物、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品
JP7738881B2 (ja) * 2021-05-20 2025-09-16 阪本薬品工業株式会社 （ポリ）グリセリン系モノマーを含有するコーティング用組成物
CN117321016A (zh) * 2021-05-20 2023-12-29 阪本药品工业株式会社 玻璃成分
JPWO2024203259A1 (enExample) * 2023-03-27 2024-10-03

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004024798A1 (ja) * 2002-09-12 2004-03-25 Shin-Etsu Chemical Co., Ltd. 新規なオルガノポリシロキサン重合物及びペースト状組成物並びにその組成物を用いた化粧料
JP2005344076A (ja) * 2004-06-07 2005-12-15 Shin Etsu Chem Co Ltd Ａｂａ型グリセリン変性シリコーン
JP2006218472A (ja) * 2005-01-17 2006-08-24 Shiseido Co Ltd 粉体分散安定剤及びこれを配合した粉体分散組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004024798A1 (ja) * 2002-09-12 2004-03-25 Shin-Etsu Chemical Co., Ltd. 新規なオルガノポリシロキサン重合物及びペースト状組成物並びにその組成物を用いた化粧料
JP2005344076A (ja) * 2004-06-07 2005-12-15 Shin Etsu Chem Co Ltd Ａｂａ型グリセリン変性シリコーン
JP2006218472A (ja) * 2005-01-17 2006-08-24 Shiseido Co Ltd 粉体分散安定剤及びこれを配合した粉体分散組成物

Also Published As

Publication number Publication date
TW200702925A (en) 2007-01-16
KR20060103132A (ko) 2006-09-28
JP2006267401A (ja) 2006-10-05
TWI374335B (enExample) 2012-10-11
JP4466855B2 (ja) 2010-05-26

Similar Documents

Publication Publication Date Title
JP4516963B2 (ja) フルオロスルホンアミド含有ポリマーを有するネガ型レジスト組成物およびパターン形成方法
JP6323225B2 (ja) ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
JP5413105B2 (ja) レジストパターン形成方法及びメッキパターン形成方法
KR101258704B1 (ko) 감광성 수지 조성물
CN119930878A (zh) 含氟树脂及浸没式光刻胶
KR20130084240A (ko) 감광성 수지 조성물 및 감광성 수지 조성물의 제조 방법
JP4759107B2 (ja) ケイ素含有ポリマ並びにこれを用いたレジスト組成物及びレジストパターン形成方法
KR20110086270A (ko) 포지티브형 감광성 조성물
JP4541944B2 (ja) 感光性ポリイミド樹脂組成物
JP3839840B2 (ja) ポジ型フォトレジスト及び構造体の製造方法
JPH05323611A (ja) 放射線感応性樹脂組成物
US6437058B2 (en) Polymers and positive resist compositions
JP2010033027A (ja) ポジ型感放射線性樹脂組成物
JPH0149931B2 (enExample)
US6790581B2 (en) Hybrid compound, resist, and patterning process
KR100576477B1 (ko) 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성방법
KR20110023354A (ko) 포지티브형 감광성 조성물
JP5218762B2 (ja) レジストパターンの形成方法
CN112731764A (zh) 负性光刻胶组合物和形成光刻胶图案的方法
KR100862018B1 (ko) 포지티브형 레지스트 조성물 및 패턴 형성 방법
JP2020517984A (ja) ポジ型感光性シロキサン組成物、およびそれを用いて形成した硬化膜
CN118725303A (zh) 一种硅氧烷低聚物及其制备方法和抗反射涂料组合物
CN116880125A (zh) 正性感光性树脂组合物其用途及使用其的金属图形化方法
CN116203798A (zh) 一种i线光刻胶及其制备方法和应用
CN116203797A (zh) 一种i线光刻胶及其制备方法和应用

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160318

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170322

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20180418

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20190418

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250423

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250423

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250423