KR101203914B1 - 플라즈마 에칭방법 - Google Patents

플라즈마 에칭방법 Download PDF

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Publication number
KR101203914B1
KR101203914B1 KR1020100072325A KR20100072325A KR101203914B1 KR 101203914 B1 KR101203914 B1 KR 101203914B1 KR 1020100072325 A KR1020100072325 A KR 1020100072325A KR 20100072325 A KR20100072325 A KR 20100072325A KR 101203914 B1 KR101203914 B1 KR 101203914B1
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South Korea
Prior art keywords
film
resist
mask
plasma etching
forming step
Prior art date
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Expired - Fee Related
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KR1020100072325A
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English (en)
Korean (ko)
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KR20120002900A (ko
Inventor
가즈마사 오쿠마
아키토 고우치
겐이치 구와하라
미치카즈 모리모토
고 사이토
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20120002900A publication Critical patent/KR20120002900A/ko
Application granted granted Critical
Publication of KR101203914B1 publication Critical patent/KR101203914B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020100072325A 2010-07-01 2010-07-27 플라즈마 에칭방법 Expired - Fee Related KR101203914B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-150710 2010-07-01
JP2010150710A JP2012015343A (ja) 2010-07-01 2010-07-01 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
KR20120002900A KR20120002900A (ko) 2012-01-09
KR101203914B1 true KR101203914B1 (ko) 2012-11-23

Family

ID=45400037

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100072325A Expired - Fee Related KR101203914B1 (ko) 2010-07-01 2010-07-27 플라즈마 에칭방법

Country Status (4)

Country Link
US (1) US20120003838A1 (https=)
JP (1) JP2012015343A (https=)
KR (1) KR101203914B1 (https=)
TW (1) TW201203348A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012026286A1 (ja) * 2010-08-27 2012-03-01 東京エレクトロン株式会社 エッチング方法、基板処理方法、パターン形成方法、半導体素子の製造方法、および半導体素子
JP6173684B2 (ja) * 2012-12-25 2017-08-02 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
KR102106256B1 (ko) 2013-07-03 2020-05-04 삼성전자 주식회사 포토 마스크 및 그 제조 방법
JP6748354B2 (ja) 2015-09-18 2020-09-02 セントラル硝子株式会社 ドライエッチング方法及びドライエッチング剤
KR102362462B1 (ko) 2016-03-29 2022-02-14 도쿄엘렉트론가부시키가이샤 피처리체를 처리하는 방법
JP6770848B2 (ja) 2016-03-29 2020-10-21 東京エレクトロン株式会社 被処理体を処理する方法
KR102375256B1 (ko) * 2017-05-26 2022-03-16 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP6363266B2 (ja) * 2017-06-22 2018-07-25 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
DE102017128070B4 (de) 2017-08-31 2023-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Ätzen zum Verringern von Bahnunregelmässigkeiten
US10475700B2 (en) 2017-08-31 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Etching to reduce line wiggling
JP7045954B2 (ja) 2018-07-25 2022-04-01 東京エレクトロン株式会社 ハードマスク用膜を形成する方法および装置、ならびに半導体装置の製造方法
KR102756671B1 (ko) 2019-02-21 2025-01-17 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 표시 장치 및 표시 장치의 제조 방법
CN111785613B (zh) * 2019-04-04 2025-03-28 长鑫存储技术有限公司 半导体结构的形成方法以及半导体结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038927A1 (en) * 2003-06-27 2008-02-14 Yoko Yamaguchi Method for multi-layer resist plasma etch
KR100921588B1 (ko) * 2005-03-15 2009-10-13 마이크론 테크놀로지, 인크. 포토리소그래피의 피쳐들에 관련된 감소된 피치를 갖는패턴들

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372087A (ja) * 1989-08-10 1991-03-27 Toshiba Corp ドライエッチング方法
JP3407086B2 (ja) * 1994-06-17 2003-05-19 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
US7981810B1 (en) * 2006-06-08 2011-07-19 Novellus Systems, Inc. Methods of depositing highly selective transparent ashable hardmask films
US20100330805A1 (en) * 2007-11-02 2010-12-30 Kenny Linh Doan Methods for forming high aspect ratio features on a substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038927A1 (en) * 2003-06-27 2008-02-14 Yoko Yamaguchi Method for multi-layer resist plasma etch
KR100921588B1 (ko) * 2005-03-15 2009-10-13 마이크론 테크놀로지, 인크. 포토리소그래피의 피쳐들에 관련된 감소된 피치를 갖는패턴들

Also Published As

Publication number Publication date
KR20120002900A (ko) 2012-01-09
US20120003838A1 (en) 2012-01-05
JP2012015343A (ja) 2012-01-19
TW201203348A (en) 2012-01-16

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