KR101201698B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101201698B1
KR101201698B1 KR1020117025808A KR20117025808A KR101201698B1 KR 101201698 B1 KR101201698 B1 KR 101201698B1 KR 1020117025808 A KR1020117025808 A KR 1020117025808A KR 20117025808 A KR20117025808 A KR 20117025808A KR 101201698 B1 KR101201698 B1 KR 101201698B1
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KR
South Korea
Prior art keywords
electrodes
pair
memory element
voltage
memory
Prior art date
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Expired - Fee Related
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KR1020117025808A
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English (en)
Korean (ko)
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KR20110127286A (ko
Inventor
요지 노무라
히로코 아베
유지 이와키
？페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20110127286A publication Critical patent/KR20110127286A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0059—Security or protection circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Security & Cryptography (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Read Only Memory (AREA)
KR1020117025808A 2004-10-18 2005-10-12 반도체 장치 Expired - Fee Related KR101201698B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004303595 2004-10-18
JPJP-P-2004-303595 2004-10-18
PCT/JP2005/019156 WO2006043573A1 (en) 2004-10-18 2005-10-12 Semiconductor device and driving method of the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020077011426A Division KR101164437B1 (ko) 2004-10-18 2005-10-12 반도체 장치 및 그것의 구동 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127005780A Division KR20140015128A (ko) 2004-10-18 2005-10-12 반도체 장치

Publications (2)

Publication Number Publication Date
KR20110127286A KR20110127286A (ko) 2011-11-24
KR101201698B1 true KR101201698B1 (ko) 2012-11-15

Family

ID=36202988

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020117025808A Expired - Fee Related KR101201698B1 (ko) 2004-10-18 2005-10-12 반도체 장치
KR1020127005780A Ceased KR20140015128A (ko) 2004-10-18 2005-10-12 반도체 장치
KR1020077011426A Expired - Fee Related KR101164437B1 (ko) 2004-10-18 2005-10-12 반도체 장치 및 그것의 구동 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020127005780A Ceased KR20140015128A (ko) 2004-10-18 2005-10-12 반도체 장치
KR1020077011426A Expired - Fee Related KR101164437B1 (ko) 2004-10-18 2005-10-12 반도체 장치 및 그것의 구동 방법

Country Status (7)

Country Link
US (3) US7499305B2 (https=)
EP (2) EP2348460B1 (https=)
JP (1) JP5019737B2 (https=)
KR (3) KR101201698B1 (https=)
CN (2) CN100557813C (https=)
TW (2) TWI446606B (https=)
WO (1) WO2006043573A1 (https=)

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