KR101198100B1 - 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물 - Google Patents

상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물 Download PDF

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KR101198100B1
KR101198100B1 KR1020070128365A KR20070128365A KR101198100B1 KR 101198100 B1 KR101198100 B1 KR 101198100B1 KR 1020070128365 A KR1020070128365 A KR 1020070128365A KR 20070128365 A KR20070128365 A KR 20070128365A KR 101198100 B1 KR101198100 B1 KR 101198100B1
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phase change
material layer
change material
slurry composition
polishing
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KR1020070128365A
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Korean (ko)
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KR20090061374A (ko
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김종영
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삼성전자주식회사
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Priority to KR1020070128365A priority Critical patent/KR101198100B1/ko
Priority to US12/292,842 priority patent/US7682976B2/en
Priority to JP2008314555A priority patent/JP5468769B2/ja
Publication of KR20090061374A publication Critical patent/KR20090061374A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Semiconductor Memories (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020070128365A 2007-12-11 2007-12-11 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물 Active KR101198100B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020070128365A KR101198100B1 (ko) 2007-12-11 2007-12-11 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물
US12/292,842 US7682976B2 (en) 2007-12-11 2008-11-26 Methods of forming a phase-change material layer pattern, methods of manufacturing a phase-change memory device and related slurry compositions
JP2008314555A JP5468769B2 (ja) 2007-12-11 2008-12-10 相変化物質層パターンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070128365A KR101198100B1 (ko) 2007-12-11 2007-12-11 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물

Publications (2)

Publication Number Publication Date
KR20090061374A KR20090061374A (ko) 2009-06-16
KR101198100B1 true KR101198100B1 (ko) 2012-11-09

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KR1020070128365A Active KR101198100B1 (ko) 2007-12-11 2007-12-11 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물

Country Status (3)

Country Link
US (1) US7682976B2 (enExample)
JP (1) JP5468769B2 (enExample)
KR (1) KR101198100B1 (enExample)

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US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
KR20100094827A (ko) * 2009-02-19 2010-08-27 삼성전자주식회사 상변화 메모리 장치의 형성 방법
US8283202B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Single mask adder phase change memory element
US8012790B2 (en) * 2009-08-28 2011-09-06 International Business Machines Corporation Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
US8283650B2 (en) * 2009-08-28 2012-10-09 International Business Machines Corporation Flat lower bottom electrode for phase change memory cell
US8129268B2 (en) 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US7943420B1 (en) * 2009-11-25 2011-05-17 International Business Machines Corporation Single mask adder phase change memory element
US20120001118A1 (en) 2010-07-01 2012-01-05 Koo Ja-Ho Polishing slurry for chalcogenide alloy
US20120003834A1 (en) 2010-07-01 2012-01-05 Koo Ja-Ho Method Of Polishing Chalcogenide Alloy
CN102463522B (zh) * 2010-11-18 2014-09-24 中芯国际集成电路制造(上海)有限公司 铝的化学机械抛光方法
KR20120104031A (ko) * 2011-03-11 2012-09-20 삼성전자주식회사 상변화 물질층, 상변화 물질층의 형성 방법, 상변화 메모리 장치 및 상변화 메모리 장치의 제조 방법
CN102690604A (zh) * 2011-03-24 2012-09-26 中国科学院上海微系统与信息技术研究所 化学机械抛光液
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8309468B1 (en) 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
JP5945123B2 (ja) * 2012-02-01 2016-07-05 株式会社フジミインコーポレーテッド 研磨用組成物
JP2013247341A (ja) 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
US11271155B2 (en) 2020-03-10 2022-03-08 International Business Machines Corporation Suppressing oxidation of silicon germanium selenium arsenide material

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US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5825046A (en) 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
JP2002151451A (ja) * 2000-11-14 2002-05-24 Jsr Corp 研磨速度比の調整方法ならびに化学機械研磨用水系分散体およびこの化学機械研磨用水系分散体を用いた半導体装置の製造方法
KR20030081900A (ko) 2002-04-15 2003-10-22 삼성전자주식회사 상변화 메모리 소자의 제조방법
KR100979710B1 (ko) 2003-05-23 2010-09-02 삼성전자주식회사 반도체 메모리 소자 및 제조방법
JP4618987B2 (ja) * 2003-05-26 2011-01-26 日立化成工業株式会社 研磨液及び研磨方法
JP2005032855A (ja) 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法
JP2005123482A (ja) 2003-10-17 2005-05-12 Fujimi Inc 研磨方法
JP4900565B2 (ja) 2005-02-23 2012-03-21 Ｊｓｒ株式会社 化学機械研磨方法
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KR100681266B1 (ko) 2005-07-25 2007-02-09 삼성전자주식회사 가변 저항 구조물의 제조 방법 및 이를 이용한 상변화메모리 장치의 제조 방법
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US8518296B2 (en) * 2007-02-14 2013-08-27 Micron Technology, Inc. Slurries and methods for polishing phase change materials

Also Published As

Publication number Publication date
JP2009147337A (ja) 2009-07-02
US20090149006A1 (en) 2009-06-11
JP5468769B2 (ja) 2014-04-09
KR20090061374A (ko) 2009-06-16
US7682976B2 (en) 2010-03-23

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