JP2009147337A - 相変化物質層パターンの形成方法、相変化メモリー装置の製造方法、及びこれに使用される相変化物質層研磨用スラリー造成物 - Google Patents
相変化物質層パターンの形成方法、相変化メモリー装置の製造方法、及びこれに使用される相変化物質層研磨用スラリー造成物 Download PDFInfo
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- JP2009147337A JP2009147337A JP2008314555A JP2008314555A JP2009147337A JP 2009147337 A JP2009147337 A JP 2009147337A JP 2008314555 A JP2008314555 A JP 2008314555A JP 2008314555 A JP2008314555 A JP 2008314555A JP 2009147337 A JP2009147337 A JP 2009147337A
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- change material
- material layer
- phase change
- polishing
- insulating film
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- 238000007254 oxidation reaction Methods 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
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- 235000006666 potassium iodate Nutrition 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N serine Chemical compound OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
【解決手段】基板上に窪みを有する絶縁膜を形成した後、絶縁膜上に窪みを埋めながら相変化物質層を形成する。絶縁膜と相変化物質層との間の第1研磨選択比を有する第1スラリー造成物を適用して相変化物質層に対する第1研磨工程を遂行した後、第1研磨選択比より低い第2研磨選択比を有する第2スラリー造成物を適用して相変化物質層に対する第2研磨工程を遂行して窪みを埋める相変化物質層パターンを形成する。これによって、相変化物質層パターンの上部に窪みが発生するか、あるいは表面酸化膜が形成されることを抑制して相変化メモリー装置の不良発生を著しく減少させることができる。
【選択図】図1
Description
図1は、本発明の実施例による相変化物質層パターンの形成方法を説明するための工程フローチャートであり、図2〜図4は本発明の実施例による相変化物質層パターンの形成方法を説明するための断面図である。
図5〜図10は、本発明の実施例による相変化メモリー装置の製造方法を説明するための断面図である。
[製造例1]
研磨剤であるコロイダルシリカ約3.5重量%、クエン酸約3重量%、過酸化水素約0.2重量%、ベンゾトリアゾール約0.2重量%、及び余分の脱イオン水を混合し、ph調節剤である塩酸を適正量添加してphが約4.0である相変化物質層研磨用スラリー造成物を製造した。
研磨剤、クエン酸、過酸化水素、及びベンゾトリアゾールの含量が異なることを除いては製造例1の方法と実質的に同一方法で相変化物質層研磨用スラリー造成物を製造した。相変化物質層研磨用スラリー造成物の製造に使用された研磨剤、クエン酸、過酸化水素、及びベンゾトリアゾールの含量を下記の表1に示す。表1において含量の単位は重量%である。
製造例1〜7で製造されたスラリー造成物に対して相変化物質層及び酸化膜に対する研磨実験を遂行して研磨速度及び研磨選択比を評価した。
105、270、375 絶縁膜
110 窪み
120 表面酸化膜
115、280、380 相変化物質層
125、285、385 相変化物質層パターン
205、305 素子分離膜
210、310 ゲート絶縁膜パターン
215、315 ゲート導電膜パターン
220、320 ゲートマスク
225、325 ゲートスペーサー
230、330 ゲート構造物
235、335 第1コンタクト領域
240、340 第2コンタクト領域
245、345、365 下部層間絶縁膜
250 第1パッド
255 第2パッド
355 下部パッド
260 下部電極
265、360 下部配線
275 開口
290、390 上部電極
293、393 上部層間絶縁膜
296、396 上部パッド
299、399 上部配線
Claims (23)
- 基板上に窪みを有する絶縁膜を形成する段階と、
前記窪みを埋めながら前記絶縁膜上に相変化物質層を形成する段階と、
前記絶縁膜と前記相変化物質層との間の第1研磨選択比を有する第1スラリー造成物を適用して前記相変化物質層に対する第1研磨工程を遂行する段階と、
前記第1研磨選択比より低い第2研磨選択比を有する第2スラリー造成物を適用して前記相変化物質層に対する第2研磨工程を遂行し、前記窪みを埋める相変化物質層パターンを形成する段階とを含む相変化物質層パターンの形成方法。 - 前記第1研磨選択比は1:5〜1:1,000の範囲であることを特徴とする請求項1記載の相変化物質層パターンの形成方法。
- 前記第2研磨選択比1:0.5〜1:2の範囲であることを特徴とする請求項1記載の相変化物質層パターンの形成方法。
- 前記第2研磨工程を遂行する段階は、前記第1スラリー造成物が前記相変化物質層の上部表面を酸化させて形成される表面酸化膜を除去する段階をさらに含むことを特徴とする請求項1記載の相変化物質層パターンの形成方法。
- 前記第1スラリー造成物は無機研磨剤、酸化剤、有機酸、及び溶媒を含み、前記第2スラリー造成物は無機研磨剤、酸化剤、有機酸、アゾール化合物、および溶媒を含むことを特徴とする請求項1記載の相変化物質層パターンの形成方法。
- 前記第1スラリー造成物は無機研磨剤を0.1〜2重量%の範囲で含み、前記第2スラリー造成物は無機研磨剤を2.1〜5重量%の範囲で含むことを特徴とする請求項5記載の相変化物質層パターンの形成方法。
- 前記第1スラリー造成物は酸化剤を0.12〜5%の範囲で含み、前記第2スラリー造成物は酸化剤を0.01〜0.5重量%の範囲で含むことを特徴とする請求項5記載の相変化物質層パターンの形成方法。
- 前記第1スラリー造成物は前記絶縁膜に対する研磨速度が1〜250Å/minの範囲であり、前記第2スラリー造成物は前記絶縁膜に対する研磨速度が300〜1,000Å/minの範囲であることを特徴とする請求項5記載の相変化物質層パターンの形成方法。
- 前記第1スラリー造成物は前記相変化物質層に対する研磨速度が1,000〜100,000Å/minの範囲であり、前記第2スラリー造成物は前記相変化物質層に対する研磨速度が150〜1,000Å/minの範囲であることを特徴とする請求項5記載の相変化物質層パターンの形成方法。
- 前記絶縁膜はシリコン酸化物、シリコン酸窒化物、シリコン窒化物、またはこれらの混合物を利用して形成されることを特徴とする請求項1記載の相変化物質層パターンの形成方法。
- 前記相変化物質層はカルコゲン化合物を利用して形成されることを特徴とする請求項1記載の相変化物質層パターンの形成方法。
- 前記窪みを有する前記絶縁膜を形成する段階は、
基板上に下部電極を形成する段階と、
前記下部電極上に前記絶縁膜を形成する段階と、
前記絶縁膜を部分的にエッチングして前記下部電極を露出させるコンタクトホールを形成する段階と含むことを特徴とする請求項1記載の相変化物質層パターンの形成方法。 - 前記相変化物質層パターン上に上部電極を形成する段階をさらに含むことを特徴とする請求項12記載の相変化物質層パターンの形成方法。
- 前記窪みを有する前記絶縁膜を形成する段階は、
基板上にダイオードを形成する段階と、
前記ダイオード上に前記絶縁膜を形成する段階と、
前記絶縁膜を部分的にエッチングして前記ダイオードを露出させる開口を形成する段階とを含むことを特徴とする請求項1記載の相変化物質層パターンの形成方法。 - 前記第1及び第2スラリー造成物は各々第1含量の無機研磨剤と第2含量の無機研磨剤を含み、前記第1含量は第2含量より少ないことを特徴とする請求項1記載の相変化物質層パターンの形成方法。
- 前記第2スラリー造成物は前記絶縁膜に対する研磨速度が第1スラリー造成物の前記絶縁膜に対する研磨速度より速いことを特徴とする請求項15記載の相変化物質層パターンの形成方法。
- 前記第2研磨工程を遂行する段階は、前記第1スラリー造成物が前記相変化物質層の上部表面を酸化させて形成される表面酸化膜を除去する段階をさらに含むことを特徴とする請求項16記載の相変化物質層パターンの形成方法。
- 前記第2研磨工程で前記相変化物質層に対する研磨速度は第1研磨工程で前記相変化物質層に対する研磨速度より遅いことを特徴とする請求項5記載の相変化物質層パターンの形成方法。
- 前記第1研磨工程を遂行することは前記相変化物質層の一部が前記絶縁膜の上面上に残るまで前記絶縁膜の上面上に位置する前記相変化物質層のバルク部分を除去することを含み、
前記第2研磨工程を遂行することは前記絶縁膜の上面が露出されるまで前記表面の酸化膜と前記絶縁膜の上面上に残る前記相変化物質層の一部を除去することを含むことを特徴とする請求項第4記載の相変化物質層パターンの形成方法。 - 前記第1研磨工程を遂行することは前記絶縁膜の少なくとも一部が露出されるまで前記絶縁膜の上面上に位置する前記相変化物質層のバルク部分を除去することを含み、
前記第2研磨工程を遂行することは前記絶縁膜の上面が全部露出されるまで前記表面酸化膜、前記相変化物質層の一部及び前記絶縁膜の一部を除去することを含むことを特徴とする請求項4記載の相変化物質層パターンの形成方法。 - 無機研磨剤2.1〜5重量%、酸化剤0.01〜0.5重量%、有機酸0.1〜5重量%、アゾール化合物0.01〜10重量%、及び余分の溶媒を含み、相変化メモリー装置の相変化物質層の研磨に使用される相変化物質層の研磨用スラリー造成物。
- 前記スラリー造成物は絶縁物質と相変化物質との間の研磨選択比が1:0.5〜1:2の範囲であることを特徴とする請求項21記載の相変化物質層の研磨用スラリー造成物。
- 前記スラリー造成物は絶縁膜に対する研磨速度が300〜1,000Å/minの範囲であり、前記相変化物質層に対する研磨速度が150〜1,000Å/minの範囲であることを特徴とする請求項21記載の相変化物質層の研磨用スラリー造成物。
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US20090149006A1 (en) | 2009-06-11 |
KR101198100B1 (ko) | 2012-11-09 |
US7682976B2 (en) | 2010-03-23 |
JP5468769B2 (ja) | 2014-04-09 |
KR20090061374A (ko) | 2009-06-16 |
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