KR101160006B1 - 챔버 내부 표면 상의 순수한 또는 거의 순수한 실리콘 시즈닝 층을 이용하는 플라즈마 침지형 이온 주입 방법 - Google Patents

챔버 내부 표면 상의 순수한 또는 거의 순수한 실리콘 시즈닝 층을 이용하는 플라즈마 침지형 이온 주입 방법 Download PDF

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KR101160006B1
KR101160006B1 KR1020107019876A KR20107019876A KR101160006B1 KR 101160006 B1 KR101160006 B1 KR 101160006B1 KR 1020107019876 A KR1020107019876 A KR 1020107019876A KR 20107019876 A KR20107019876 A KR 20107019876A KR 101160006 B1 KR101160006 B1 KR 101160006B1
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South Korea
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workpiece
ion implantation
chamber
plasma
support surface
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Korean (ko)
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KR20100120199A (ko
Inventor
시지안 리
카틱 라마스와미
히로지 하나와
선미 조
바이아지오 갈로
최동원
마지드 에이. 포아드
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020107019876A 2008-02-06 2009-01-19 챔버 내부 표면 상의 순수한 또는 거의 순수한 실리콘 시즈닝 층을 이용하는 플라즈마 침지형 이온 주입 방법 Active KR101160006B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/069,424 US7968439B2 (en) 2008-02-06 2008-02-06 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
US12/069,424 2008-02-06
PCT/US2009/000369 WO2009099519A1 (en) 2008-02-06 2009-01-19 Plasma immersion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Publications (2)

Publication Number Publication Date
KR20100120199A KR20100120199A (ko) 2010-11-12
KR101160006B1 true KR101160006B1 (ko) 2012-06-25

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KR1020107019876A Active KR101160006B1 (ko) 2008-02-06 2009-01-19 챔버 내부 표면 상의 순수한 또는 거의 순수한 실리콘 시즈닝 층을 이용하는 플라즈마 침지형 이온 주입 방법

Country Status (6)

Country Link
US (2) US7968439B2 (cg-RX-API-DMAC7.html)
JP (1) JP4926280B2 (cg-RX-API-DMAC7.html)
KR (1) KR101160006B1 (cg-RX-API-DMAC7.html)
CN (1) CN101939821B (cg-RX-API-DMAC7.html)
TW (1) TW200949912A (cg-RX-API-DMAC7.html)
WO (1) WO2009099519A1 (cg-RX-API-DMAC7.html)

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US7968439B2 (en) * 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
US8642128B2 (en) * 2009-04-20 2014-02-04 Applied Materials, Inc. Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
US8999847B2 (en) 2010-08-16 2015-04-07 Applied Materials, Inc. a-Si seasoning effect to improve SiN run-to-run uniformity
US20130288465A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Methods for filling high aspect ratio features on substrates
CN103887135B (zh) * 2012-12-24 2016-05-18 中国科学院微电子研究所 离子注入系统
US9745658B2 (en) 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
US9548188B2 (en) * 2014-07-30 2017-01-17 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
US10325800B2 (en) * 2014-08-26 2019-06-18 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP6830030B2 (ja) * 2017-04-27 2021-02-17 新光電気工業株式会社 静電チャック及び基板固定装置
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US10242893B2 (en) * 2017-06-20 2019-03-26 Applied Materials, Inc. Method and apparatus for de-chucking a workpiece using a swing voltage sequence
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
JP2021506126A (ja) 2017-12-07 2021-02-18 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ チャンバ調整における耐酸化保護層
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
CN113196451A (zh) 2018-10-19 2021-07-30 朗姆研究公司 用于半导体处理的室部件的原位保护性涂层
US11430654B2 (en) * 2019-11-27 2022-08-30 Applied Materials, Inc. Initiation modulation for plasma deposition

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20020146512A1 (en) 2001-02-08 2002-10-10 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
US20050191827A1 (en) 2000-08-11 2005-09-01 Collins Kenneth S. Plasma immersion ion implantation process
US20060073683A1 (en) 2000-08-11 2006-04-06 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

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US3904505A (en) * 1970-03-20 1975-09-09 Space Sciences Inc Apparatus for film deposition
JPH1197430A (ja) * 1997-07-14 1999-04-09 Applied Materials Inc 高密度プラズマプロセスチャンバ
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
EP1307896A2 (en) * 2000-08-11 2003-05-07 Applied Materials, Inc. Externally excited torroidal plasma source
JP2004014868A (ja) * 2002-06-07 2004-01-15 Tokyo Electron Ltd 静電チャック及び処理装置
US20050260354A1 (en) 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7691755B2 (en) * 2007-05-15 2010-04-06 Applied Materials, Inc. Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor
US7968439B2 (en) 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050191827A1 (en) 2000-08-11 2005-09-01 Collins Kenneth S. Plasma immersion ion implantation process
US20060073683A1 (en) 2000-08-11 2006-04-06 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US20020146512A1 (en) 2001-02-08 2002-10-10 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput

Also Published As

Publication number Publication date
WO2009099519A1 (en) 2009-08-13
US20110207307A1 (en) 2011-08-25
US20090197401A1 (en) 2009-08-06
CN101939821B (zh) 2013-01-30
TW200949912A (en) 2009-12-01
CN101939821A (zh) 2011-01-05
US8168519B2 (en) 2012-05-01
US7968439B2 (en) 2011-06-28
JP2011511473A (ja) 2011-04-07
KR20100120199A (ko) 2010-11-12
JP4926280B2 (ja) 2012-05-09

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