CN101939821B - 利用腔室内部表面上的纯硅或近乎纯硅处理层进行的等离子体浸没式离子注入法 - Google Patents

利用腔室内部表面上的纯硅或近乎纯硅处理层进行的等离子体浸没式离子注入法 Download PDF

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Publication number
CN101939821B
CN101939821B CN2009801042371A CN200980104237A CN101939821B CN 101939821 B CN101939821 B CN 101939821B CN 2009801042371 A CN2009801042371 A CN 2009801042371A CN 200980104237 A CN200980104237 A CN 200980104237A CN 101939821 B CN101939821 B CN 101939821B
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China
Prior art keywords
workpiece
chamber
plasma
silicon
radio frequency
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Expired - Fee Related
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CN2009801042371A
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English (en)
Chinese (zh)
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CN101939821A (zh
Inventor
李实健
卡提克·雷马斯瓦米
塙广二
塞奥-米·乔
比亚吉欧·加洛
崔东元
马耶德·A·福阿德
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN2009801042371A 2008-02-06 2009-01-19 利用腔室内部表面上的纯硅或近乎纯硅处理层进行的等离子体浸没式离子注入法 Expired - Fee Related CN101939821B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/069,424 US7968439B2 (en) 2008-02-06 2008-02-06 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
US12/069,424 2008-02-06
PCT/US2009/000369 WO2009099519A1 (en) 2008-02-06 2009-01-19 Plasma immersion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Publications (2)

Publication Number Publication Date
CN101939821A CN101939821A (zh) 2011-01-05
CN101939821B true CN101939821B (zh) 2013-01-30

Family

ID=40932102

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801042371A Expired - Fee Related CN101939821B (zh) 2008-02-06 2009-01-19 利用腔室内部表面上的纯硅或近乎纯硅处理层进行的等离子体浸没式离子注入法

Country Status (6)

Country Link
US (2) US7968439B2 (cg-RX-API-DMAC7.html)
JP (1) JP4926280B2 (cg-RX-API-DMAC7.html)
KR (1) KR101160006B1 (cg-RX-API-DMAC7.html)
CN (1) CN101939821B (cg-RX-API-DMAC7.html)
TW (1) TW200949912A (cg-RX-API-DMAC7.html)
WO (1) WO2009099519A1 (cg-RX-API-DMAC7.html)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968439B2 (en) * 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces
US8642128B2 (en) * 2009-04-20 2014-02-04 Applied Materials, Inc. Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
US8999847B2 (en) 2010-08-16 2015-04-07 Applied Materials, Inc. a-Si seasoning effect to improve SiN run-to-run uniformity
US20130288465A1 (en) * 2012-04-26 2013-10-31 Applied Materials, Inc. Methods for filling high aspect ratio features on substrates
CN103887135B (zh) * 2012-12-24 2016-05-18 中国科学院微电子研究所 离子注入系统
US9745658B2 (en) 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
US9548188B2 (en) * 2014-07-30 2017-01-17 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
US10325800B2 (en) * 2014-08-26 2019-06-18 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
JP6830030B2 (ja) * 2017-04-27 2021-02-17 新光電気工業株式会社 静電チャック及び基板固定装置
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US10242893B2 (en) * 2017-06-20 2019-03-26 Applied Materials, Inc. Method and apparatus for de-chucking a workpiece using a swing voltage sequence
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
JP2021506126A (ja) 2017-12-07 2021-02-18 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ チャンバ調整における耐酸化保護層
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
CN113196451A (zh) 2018-10-19 2021-07-30 朗姆研究公司 用于半导体处理的室部件的原位保护性涂层
US11430654B2 (en) * 2019-11-27 2022-08-30 Applied Materials, Inc. Initiation modulation for plasma deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904505A (en) * 1970-03-20 1975-09-09 Space Sciences Inc Apparatus for film deposition
JPH1197430A (ja) * 1997-07-14 1999-04-09 Applied Materials Inc 高密度プラズマプロセスチャンバ
US7183177B2 (en) * 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7037813B2 (en) 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
US7288491B2 (en) 2000-08-11 2007-10-30 Applied Materials, Inc. Plasma immersion ion implantation process
EP1307896A2 (en) * 2000-08-11 2003-05-07 Applied Materials, Inc. Externally excited torroidal plasma source
JP2004014868A (ja) * 2002-06-07 2004-01-15 Tokyo Electron Ltd 静電チャック及び処理装置
US20050260354A1 (en) 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7767561B2 (en) * 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
US7691755B2 (en) * 2007-05-15 2010-04-06 Applied Materials, Inc. Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor
US7968439B2 (en) 2008-02-06 2011-06-28 Applied Materials, Inc. Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6589868B2 (en) * 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput

Also Published As

Publication number Publication date
WO2009099519A1 (en) 2009-08-13
US20110207307A1 (en) 2011-08-25
US20090197401A1 (en) 2009-08-06
TW200949912A (en) 2009-12-01
CN101939821A (zh) 2011-01-05
KR101160006B1 (ko) 2012-06-25
US8168519B2 (en) 2012-05-01
US7968439B2 (en) 2011-06-28
JP2011511473A (ja) 2011-04-07
KR20100120199A (ko) 2010-11-12
JP4926280B2 (ja) 2012-05-09

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SE01 Entry into force of request for substantive examination
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Address after: American California

Applicant after: Applied Materials Inc.

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