JP4926280B2 - チャンバ内面上に純粋またはほぼ純粋なシリコンのシーズニング層を用いるプラズマ浸漬イオン注入方法 - Google Patents
チャンバ内面上に純粋またはほぼ純粋なシリコンのシーズニング層を用いるプラズマ浸漬イオン注入方法 Download PDFInfo
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- 235000011194 food seasoning agent Nutrition 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 55
- 229910052710 silicon Inorganic materials 0.000 title claims description 43
- 239000010703 silicon Substances 0.000 title claims description 43
- 238000005468 ion implantation Methods 0.000 title claims description 26
- 238000007654 immersion Methods 0.000 title claims description 11
- 239000007789 gas Substances 0.000 claims description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- 229910001423 beryllium ion Inorganic materials 0.000 claims description 4
- 239000006227 byproduct Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 70
- 239000000463 material Substances 0.000 description 22
- 239000002019 doping agent Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 12
- 229910000077 silane Inorganic materials 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 241000894007 species Species 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- -1 boron or phosphorus Chemical compound 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 241000239290 Araneae Species 0.000 description 1
- HVORHUUJKHPQQA-UHFFFAOYSA-N CCCCCN1CC1 Chemical compound CCCCCN1CC1 HVORHUUJKHPQQA-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (13)
- プラズマ反応チャンバ内の半導体加工物に対してプラズマ浸漬イオン注入を実行する方法において、
前記反応チャンバの中に前記加工物を導入する前に、部分的導電性のシーズニング膜を前記チャンバの内面上に堆積するステップであって、前記シーズニング膜が、シリコン、酸素および水素を含み、かつ70%と85%との間のシリコン含有量を有するステップと、
加工物支持面の下にあって前記加工物支持面から絶縁されている電極に静電クランプ電圧を印加することにより、前記反応チャンバ内の前記加工物支持面上の前記加工物を静電的にクランプするステップと、
RF源パワー発生器からのRFプラズマ源パワーをプロセスガスに結合することにより、前記加工物の中にイオン注入されることになる種を含む前記プロセスガスから前記チャンバ内にプラズマを発生するステップと、
RFバイアスパワー発生器から、前記加工物の下にあって前記加工物から絶縁され、前記加工物の円周端の下にある円周端を有する円盤状の電極にRFバイアスパワーを印加するステップであって、前記RFバイアスパワーが、注入されることになる前記種の前記加工物の面より下の所望のイオン注入深さ分布に対応する5〜20kVのRFバイアス電圧を有し、前記静電クランプ電圧が、前記RFバイアス電圧の直流成分の電圧か、またはそれを上回る、ステップと、
前記クランプ電圧をオフにし、前記加工物支持面を覆う前記シーズニング膜の一部分を介して前記加工物が放電するのを待ち、その後、前記加工物支持面から前記加工物を持ち上げることにより、前記加工物を取り外すステップとを含む方法。 - シーズニング膜を堆積するステップが、前記シーズニング膜に109Ωmの電気抵抗率をもたらすシリコン含有量に相当する量のシリコン含有ガスを前記チャンバの中へ流し込むステップを含む、請求項1に記載の方法。
- 前記加工物支持面からの加工物の取外しの後に、
(a)遠隔プラズマ源で発生されたプラズマでフッ素含有ガスを解離し、
(b)前記チャンバ内に前記遠隔プラズマ源からのプラズマ副産物を供給する
ことにより、前記シーズニング膜を除去するステップをさらに含む、請求項1に記載の方法。 - 前記シーズニング膜の除去の期間中、前記チャンバ内でプラズマを発生させない、、請求項3に記載の方法。
- 前記シーズニング膜が1010Ωm未満の電気抵抗率を有し、二酸化シリコンの前記チャンバの内面への付着力と同じ付着力を有するように、前記シーズニング膜のシリコン含有量は制限される、請求項1に記載の方法。
- シーズニング膜を堆積するステップが、前記チャンバの中へ、シリコン含有ガスおよび酸素ガスを、RFプラズマ源パワーを印加しながらそれぞれ200〜400sccmおよび50〜100sccmの流速で流し込むステップを含む、請求項1に記載の方法。
- RFプラズマ源パワーが、前記加工物支持面の直径の両端に分離された対のポートに結合された、1対の互いに交差する外部の再入可能な管路に印加される、請求項6に記載の方法。
- プラズマ反応チャンバ内の半導体加工物に対してプラズマ浸漬イオン注入を実行する方法において、
前記反応チャンバの中に前記加工物を導入する前に、部分的導電性のシーズニング膜を前記チャンバの内面上に堆積するステップであって、前記シーズニング膜が、シリコン、酸素および水素を含み、かつ前記膜が1010Ωm未満の電気抵抗率を有し、前記膜のシリコン含有量は、前記膜が非粉状の固体のコーティングとして堆積するように制限されるステップと、
加工物支持面の下にあって前記加工物支持面から絶縁されている電極に静電クランプ電圧を印加することにより、前記反応チャンバ内の前記加工物支持面上の前記加工物を静電的にクランプするステップと、
RF源パワー発生器からのRFプラズマ源パワーをプロセスガスに結合することにより、前記加工物の中にイオン注入されることになる種を含む前記プロセスガスから前記チャンバ内にプラズマを発生するステップと、
RFバイアスパワー発生器から、前記加工物の下にあって前記加工物から絶縁され、前記加工物の円周端の下にある円周端を有する円盤状の電極にRFバイアスパワーを印加するステップであって、前記RFバイアスパワーが、注入されることになる前記種の前記加工物の面より下の所望のイオン注入深さ分布に対応する5〜20kVのRFバイアス電圧を有し、前記静電クランプ電圧が、前記RFバイアス電圧の直流成分の電圧か、またはそれを上回る、ステップと、
前記クランプ電圧をオフにし、前記加工物支持面を覆う前記シーズニング膜の一部分を介して前記加工物が放電するのを待ち、その後、前記加工物支持面から前記加工物を持ち上げることにより、前記加工物を取り外すステップとを含む方法。 - シーズニング膜を堆積するステップが、前記シーズニング膜に109Ωmの電気抵抗率をもたらすシリコン含有量に相当する量のシリコン含有ガスを前記チャンバの中へ流し込むステップを含む、請求項8に記載の方法。
- 前記加工物支持面からの加工物の取外しの後に、
(a)遠隔プラズマ源で発生されたプラズマでフッ素含有ガスを解離し、
(b)前記チャンバ内に前記遠隔プラズマ源からのプラズマ副産物を供給する
ことにより、前記シーズニング膜を除去するステップをさらに含む、請求項8に記載の方法。 - 前記シーズニング膜の除去の期間中、前記チャンバ内でプラズマを発生させない、請求項10に記載の方法。
- シーズニング膜を堆積するステップが、前記チャンバの中へ、シリコン含有ガスおよび酸素ガスを、RFプラズマ源パワーを印加しながらそれぞれ200〜400sccmおよび50〜100sccmの流速で流し込むステップを含む、請求項8に記載の方法。
- RFプラズマ源パワーが、前記加工物支持面の直径の両端に分離された対のポートに結合された、1対の互いに交差する外部の再入可能な管路に印加される、請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/069,424 US7968439B2 (en) | 2008-02-06 | 2008-02-06 | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
US12/069,424 | 2008-02-06 | ||
PCT/US2009/000369 WO2009099519A1 (en) | 2008-02-06 | 2009-01-19 | Plasma immersion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
Publications (3)
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JP2011511473A JP2011511473A (ja) | 2011-04-07 |
JP2011511473A5 JP2011511473A5 (ja) | 2011-10-06 |
JP4926280B2 true JP4926280B2 (ja) | 2012-05-09 |
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US (2) | US7968439B2 (ja) |
JP (1) | JP4926280B2 (ja) |
KR (1) | KR101160006B1 (ja) |
CN (1) | CN101939821B (ja) |
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WO (1) | WO2009099519A1 (ja) |
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US7968439B2 (en) * | 2008-02-06 | 2011-06-28 | Applied Materials, Inc. | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
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US8999847B2 (en) | 2010-08-16 | 2015-04-07 | Applied Materials, Inc. | a-Si seasoning effect to improve SiN run-to-run uniformity |
US20130288465A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Methods for filling high aspect ratio features on substrates |
CN103887135B (zh) * | 2012-12-24 | 2016-05-18 | 中国科学院微电子研究所 | 离子注入系统 |
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US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
JP6830030B2 (ja) * | 2017-04-27 | 2021-02-17 | 新光電気工業株式会社 | 静電チャック及び基板固定装置 |
US10242893B2 (en) | 2017-06-20 | 2019-03-26 | Applied Materials, Inc. | Method and apparatus for de-chucking a workpiece using a swing voltage sequence |
JP2021506126A (ja) | 2017-12-07 | 2021-02-18 | ラム リサーチ コーポレーションLam Research Corporation | チャンバ調整における耐酸化保護層 |
US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
US11430654B2 (en) * | 2019-11-27 | 2022-08-30 | Applied Materials, Inc. | Initiation modulation for plasma deposition |
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US3904505A (en) * | 1970-03-20 | 1975-09-09 | Space Sciences Inc | Apparatus for film deposition |
JPH1197430A (ja) * | 1997-07-14 | 1999-04-09 | Applied Materials Inc | 高密度プラズマプロセスチャンバ |
KR100809889B1 (ko) * | 2000-08-11 | 2008-03-06 | 어플라이드 머티어리얼즈 인코포레이티드 | 외부에서 여기된 토로이드형 플라즈마 소스를 구비한 플라즈마 챔버 |
US7183177B2 (en) * | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
US7288491B2 (en) * | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
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JP2004014868A (ja) * | 2002-06-07 | 2004-01-15 | Tokyo Electron Ltd | 静電チャック及び処理装置 |
US20050260354A1 (en) * | 2004-05-20 | 2005-11-24 | Varian Semiconductor Equipment Associates, Inc. | In-situ process chamber preparation methods for plasma ion implantation systems |
US7767561B2 (en) * | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
US7691755B2 (en) * | 2007-05-15 | 2010-04-06 | Applied Materials, Inc. | Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor |
US7968439B2 (en) * | 2008-02-06 | 2011-06-28 | Applied Materials, Inc. | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
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- 2009-01-19 KR KR1020107019876A patent/KR101160006B1/ko active IP Right Grant
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CN101939821A (zh) | 2011-01-05 |
JP2011511473A (ja) | 2011-04-07 |
US20110207307A1 (en) | 2011-08-25 |
US20090197401A1 (en) | 2009-08-06 |
KR101160006B1 (ko) | 2012-06-25 |
KR20100120199A (ko) | 2010-11-12 |
US8168519B2 (en) | 2012-05-01 |
TW200949912A (en) | 2009-12-01 |
CN101939821B (zh) | 2013-01-30 |
WO2009099519A1 (en) | 2009-08-13 |
US7968439B2 (en) | 2011-06-28 |
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