KR101141535B1 - Forming method electrode pattern and method of fabricating liquid crystal display device using the same - Google Patents

Abstract

A method of forming an electrode pattern and a method of manufacturing a liquid crystal display device using the same according to an embodiment of the present invention provide a substrate having an insulating film formed thereon, by forming a fine electrode pattern in a pixel area to improve an aperture ratio; Forming a first photosensitive film on the insulating film; Exposing a first region of the first photosensitive film with a first exposure dose through a mask; Moving the mask in one direction; Exposing a second region of the first photosensitive film with a second exposure amount through the mask; Developing the exposed first photoresist film to form a first photoresist pattern in which a first photoresist film of a third region overlapping the first region and the second region is removed; Removing an insulating film of a portion corresponding to the third region by using the first photoresist pattern as a mask; Forming a conductive film on the entire surface of the substrate in a state in which a first photoresist film pattern from which the first photoresist film of the third region is removed and an insulating film from which a portion corresponding to the third region is removed remain; Forming a second photosensitive film on the substrate on which the conductive film is formed; Selectively removing a thickness of the second photoresist film to leave only a second photoresist film of a portion corresponding to the third region; And selectively removing the conductive film to form an electrode pattern formed of the conductive film under the second photosensitive film in a portion corresponding to the third region.

LCD, transverse electric field, line width, exposure equipment

Description

Forming method of electrode pattern and manufacturing method of liquid crystal display device using the same {{FORMING METHOD ELECTRODE PATTERN AND METHOD OF FABRICATING LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME}

1 is an exploded perspective view schematically illustrating a structure of a general liquid crystal display device.

2A to 2D are cross-sectional views sequentially illustrating a method of forming a general electrode pattern.

3A to 3H are cross-sectional views sequentially illustrating a method of forming an electrode pattern according to an exemplary embodiment of the present invention.

4 is a plan view schematically illustrating a portion of an array substrate of a liquid crystal display according to an exemplary embodiment of the present invention.

5A through 5C are cross-sectional views sequentially illustrating a manufacturing process along line IV-IV ′ of the array substrate illustrated in FIG. 4.

6A to 6F are cross-sectional views illustrating in detail a process of forming a pixel electrode and a common electrode through the third and fourth mask processes illustrated in FIG. 5C.

DESCRIPTION OF REFERENCE NUMERALS

108: common electrode 108: common electrode line

110: array substrate 116: gate line

117 data line 118 pixel electrode

118L: pixel electrode line 170,270: photoresist

170 ', 270': Photoresist pattern

The present invention relates to a method of forming an electrode pattern, and more particularly, to a method of forming an electrode pattern capable of forming an electrode pattern finely and a method of manufacturing a liquid crystal display device using the same.

Recently, with increasing interest in information display and increasing demand for using a portable information carrier, a lightweight flat panel display (FPD), which replaces a conventional display device, a cathode ray tube (CRT), is used. The research and commercialization of Korea is focused on. In particular, the liquid crystal display (LCD) of the flat panel display device is an image representing the image using the optical anisotropy of the liquid crystal, is excellent in resolution, color display and image quality, and is actively applied to notebooks or desktop monitors have.

In general, a liquid crystal display device displays a desired image by individually supplying data signals according to image information to liquid crystal cells arranged in a matrix form to adjust a light transmittance of the liquid crystal cells. to be.

Hereinafter, a liquid crystal display will be described in detail with reference to FIG. 1.

1 is an exploded perspective view schematically illustrating a structure of a general liquid crystal display device.

As shown in the figure, the liquid crystal display device is largely a color filter substrate 5 as a first substrate and an array substrate 10 as a second substrate, and the color filter substrate 5 and an array substrate. It consists of a liquid crystal layer 30 formed between (10).

The color filter substrate 5 includes a color filter composed of a sub color filter 7 for implementing red (R), green (G), and blue (B) colors and the sub color filter ( 7) a black matrix 6 that separates and blocks light passing through the liquid crystal layer 30, and a transparent common electrode 8 that applies a voltage to the liquid crystal layer 30.

In the array substrate 10, gate lines 16 and data lines 17 are formed on the substrate 10 to be vertically and horizontally defined to define the pixel region P. In this case, a thin film transistor T, which is a switching element, is formed in an intersection region of the gate line 16 and the data line 17, and a pixel electrode 18 is formed in each pixel region P.

The pixel region P is a sub pixel corresponding to one sub color filter 7 of the color filter substrate 5. The color image is a sub-color filter 7 of the red, green, and blue colors. It is obtained by combining. That is, three subpixels of red, green, and blue are gathered to form one pixel, and the thin film transistor T is connected to the red and green subpixels, respectively.

A general liquid crystal display configured as described above uses a photolithography process when forming an electrode pattern such as the pixel electrode 18.

2A through 2D are cross-sectional views sequentially illustrating a method of forming a general electrode pattern, and illustrate a method of forming an electrode pattern using a general photolithography process.

In this case, the photolithography process is a series of processes for transferring a pattern drawn on a mask onto a substrate on which a thin film is deposited to form a desired pattern. The photolithography process includes a plurality of processes such as photoresist coating, exposure, and development.

As shown in FIG. 2A, a conductive film 50 is formed on the substrate 10 to pattern a transparent electrode such as a pixel electrode.

The conductive layer 50 is formed of a transparent conductive material such as indium tin oxide (ITO) when forming a pixel electrode, and in order to pattern the conductive layer 50 into a desired shape, FIG. As shown in FIG. 1, a photosensitive film 70 is formed on the entire surface of the substrate 10 on which the conductive film 50 is formed.

Next, when the mask 80 having a predetermined exposure width (W) is applied to irradiate light to the lower photoresist layer 70 and then develop the process, the mask 80 may be shaped as shown in FIG. 2C. The photosensitive film pattern 70 ′ developed as described above is formed on the conductive film 50.

In this case, when the positive photoresist film 70 is used, the mask 80 includes a blocking area 80A for blocking all incident light and a light transmitting area 80B for transmitting all of the light. The line width of the electrode pattern to be formed is determined according to the width W.

Next, as shown in FIG. 2D, an electrode pattern having a predetermined line width W 'is formed on the substrate 10 by selectively patterning the lower conductive layer 50 using the photosensitive layer pattern 70' as a mask. 50 ') is formed.

As described above, the electrode pattern 50 'formed through the general photolithography process includes the design of the mask 80 to determine the line width W' according to the conditions of the exposure apparatus, and as a result, the electrode pattern that can be minutely realized. The line width (W ') of (50') has a certain limit.

An object of the present invention is to provide a method of forming an electrode pattern capable of forming a fine electrode pattern by using two exposures, and a method of manufacturing a liquid crystal display device using the same.

In addition, another object of the present invention is to provide a method of manufacturing a liquid crystal display device which can improve the aperture ratio by implementing the fine electrode pattern in the pixel region.

Other objects and features of the present invention will be described in the configuration and claims of the invention described below.

In order to achieve the above object, the method of forming an electrode pattern of the present invention comprises the steps of providing a substrate with an insulating film formed; Forming a first photosensitive film on the insulating film; Exposing a first region of the first photosensitive film with a first exposure dose through a mask; Moving the mask in one direction; Exposing a second region of the first photosensitive film with a second exposure amount through the mask; Developing the exposed first photoresist film to form a first photoresist pattern in which a first photoresist film of a third region overlapping the first region and the second region is removed; Removing an insulating film of a portion corresponding to the third region by using the first photoresist pattern as a mask; Forming a conductive film on the entire surface of the substrate in a state in which a first photoresist film pattern from which the first photoresist film of the third region is removed and an insulating film from which a portion corresponding to the third region is removed remain; Forming a second photosensitive film on the substrate on which the conductive film is formed; Selectively removing a thickness of the second photoresist film to leave only a second photoresist film of a portion corresponding to the third region; And selectively removing the conductive film to form an electrode pattern formed of the conductive film under the second photosensitive film in a portion corresponding to the third region.

In addition, the manufacturing method of the liquid crystal display device of the present invention comprises the steps of forming a switching element consisting of a gate electrode, a gate line, an active layer, a source electrode, a drain electrode and a data line on a substrate; Forming a protective film on the substrate on which the switching element is formed; Forming a first photoresist film on the passivation film; Exposing a first region of the first photosensitive film with a first exposure dose through a mask; Moving the mask in one direction; Exposing a second region of the first photosensitive film with a second exposure amount through the mask; Developing the exposed first photoresist film to form a first photoresist pattern in which a first photoresist film of a third region overlapping the first region and the second region is removed; Removing a protective film of a portion corresponding to the third region using the first photoresist pattern as a mask; Forming a conductive film on the entire surface of the substrate in a state in which a first photosensitive film pattern from which the first photoresist film of the third region is removed and a protective film from which a portion corresponding to the third region is removed remain; Forming a second photosensitive film on the substrate on which the conductive film is formed; Selectively removing a thickness of the second photoresist film to leave only a second photoresist film of a portion corresponding to the third region; And selectively removing the conductive film to form an electrode pattern formed of the conductive film under the second photosensitive film in a portion corresponding to the third region.

Hereinafter, a preferred embodiment of a method of forming an electrode pattern and a method of manufacturing a liquid crystal display device using the same according to the present invention configured as described above will be described in detail with reference to the accompanying drawings.

3A to 3H are cross-sectional views sequentially illustrating a method of forming an electrode pattern according to an exemplary embodiment of the present invention.

First, as shown in FIG. 3A, a first photosensitive layer 170 made of a photosensitive material such as a photoresist is formed on the substrate 110 on which the insulating layer 115 is formed.

In this case, the insulating film 115 may include an inorganic insulating film such as a silicon nitride film or a silicon oxide film, and the inorganic insulating film 115 may form a gate insulating film or a protective film of the liquid crystal display device.

As described above, the case in which the electrode pattern is formed on the insulating film 115 is described as an example, but the present invention is not limited thereto.

Next, a mask 180 having a predetermined exposure width W is applied to irradiate light onto the lower first photoresist layer 170 (first exposure process), thereby applying a mask 180 having a predetermined exposure width W to a predetermined region of the first photoresist layer 170. 1 The exposure area A is formed.

In this case, when the positive photoresist is used, the mask 180 includes a transmission region 180A for transmitting all light and a blocking region 180B for blocking all incident light, and the transmission region 180A. The width of the first exposure area A is determined according to the width W of.

At this time, in the first embodiment, the first photosensitive film 170 is irradiated with light at an exposure amount smaller than, for example, about 1/2 or less in general in the first exposure process. The first exposure area A may not reach the lower portion of the first photosensitive film 170.

Next, as shown in FIG. 3B, the mask 180 is moved by a predetermined distance D in one direction without developing. In this case, the movement distance D is taken as a minimum unit, for example, about 1 to 2 μm, which can be moved in the exposure apparatus to form an electrode pattern having a fine line width.

In addition, by applying the shifted mask 180 to irradiate light to the lower first photoresist layer 170 (second exposure process) to partially overlap the first exposure area A of the first photoresist layer 170. The second exposure area B is formed.

In this case, in the second exposure process, the first photosensitive film 170 is irradiated with a light exposure amount smaller than that of a general exposure process as in the first exposure process. The third exposure area C to which the light is overlapped and overlapped is formed even under the first photosensitive film 170.

That is, when the first and second exposures are performed at an exposure amount less than the general exposure amount as described above, the first and second exposures overlap, that is, the first exposure area A and the second exposure area B. The overlapping third exposure region C is formed to substantially enter an appropriate exposure amount and extends to the lower portion of the first photosensitive film 170.

In this case, the width W ′ of the third exposure area C formed by the first and second exposures is smaller than the width W of the transmission area 180A of the mask 180. It has a fine line width corresponding to the moving distance D of the exposure apparatus.

Next, when the exposed photosensitive film 170 is developed, the photosensitive film of the first exposure area A, the second exposure area B, and the third exposure area C is removed as illustrated in FIG. 3C. The first photoresist pattern 170 ′ of the shape is formed.

Subsequently, as shown in FIG. 3D, the partial insulating layer 115 of the insulating layer 115 may be formed to have a predetermined width W by selectively patterning the lower insulating layer 115 using the first photoresist layer pattern 170 ′ as a mask. Open to have ')'

In this case, the open predetermined region b of the insulating layer 115 corresponds to a region where an electrode pattern having a fine line width W 'is to be formed through the processes described below.

That is, as illustrated in FIG. 3E, a conductive film 150 made of a transparent conductive material such as ITO is formed on the entire surface of the substrate 110 on which the first photoresist film pattern 170 ′ is formed.

Next, a second photosensitive layer 270 is formed of a photosensitive material on the entire surface of the substrate 110. In this case, the second photoresist layer 270 is formed flat on the entire surface of the substrate 110 despite the step difference in the region b.

Thereafter, as shown in FIG. 3F, an ashing process of removing a part of the second photoresist layer 270 is performed to expose the conductive layer 150 outside the region b. In this case, the second photoresist pattern 270 ′ having a portion of the thickness removed through the ashing process remains only in the upper portion of the b region.

When the etching process of the conductive film 150 is performed, only the conductive film 150 other than the b region is selectively removed as shown in FIG. 3G, so that the conductive film 150 is formed in the b region. The electrode pattern 150 'is formed.

In this case, the second photoresist layer pattern 270 ′ remaining on the upper portion of b region may interfere with the etching of the lower conductive layer 150.

3H, when the remaining photoresist patterns 170 ′ and 270 ′ are completely removed through a strip process, a line width substantially equal to the width of the third exposure area C may be formed. The fine electrode pattern 150 'having W') is formed.

As described above, in the present exemplary embodiment, the electrode pattern is formed using the photoresist pattern formed through the exposure process and the electrode pattern having the fine line width without additional mask process. In this case, the exposure is carried out with an exposure amount less than the appropriate amount of exposure, and the electrode pattern formed through the above process has a fine line width of the minimum unit that can move in the exposure equipment.

Meanwhile, the electrode pattern having a fine line width and formed of a transparent conductive material may be used as a pixel electrode and a common electrode of an in-plane switching (IPS) type liquid crystal display device. In this case, a pixel electrode having a fine line width and The implementation of the common electrode has the advantage of improving the aperture ratio, which will be described in detail with reference to the drawings.

FIG. 4 is a plan view showing a portion of an array substrate of a liquid crystal display according to an exemplary embodiment of the present invention, in particular one pixel including a thin film transistor.

In an actual liquid crystal display device, N gate lines and M data lines cross each other and there are M × N pixels. However, only one pixel is shown in the figure for simplicity.

In this embodiment, an amorphous silicon thin film transistor using an amorphous silicon thin film as an active layer has been described as an example, but the present invention is not limited thereto, and a polycrystalline silicon thin film may be used as the active layer of the thin film transistor.

In addition, the present embodiment describes a transverse electric field type liquid crystal display device by way of example, but the present invention is not limited thereto, and the present invention may be applied to a twisted nematic liquid crystal display device. .

As shown in the drawing, a gate line 116 and a data line 117 are formed on the transparent glass substrate 110 to be arranged horizontally and horizontally to define a pixel area. The gate line 116 and the data line 117 are formed. The thin film transistor which is a switching element is formed in the cross | intersection area | region of ().

In this case, the thin film transistor includes a gate electrode 121 connected to the gate line 116, a source electrode 122 connected to the data line 117, and a drain electrode 123 connected to the pixel electrode line 118L. In addition, the thin film transistor includes a first insulating film (not shown) for insulating the gate electrode 121 and the source / drain electrodes 122 and 123 and a source electrode 122 by a gate voltage supplied to the gate electrode 121. ) And a conductive channel between the drain electrode 123 and the drain electrode 123.

The common electrode 108 and the pixel electrode 118 for generating a transverse electric field are alternately arranged in the pixel region. In this case, the pixel electrode 118 is electrically connected to the pixel electrode line 118L through the first contact hole 140A, and the common electrode 108 is disposed in parallel with the gate line 116. Electrical connection is made through the 108L and the second contact hole 140B.

At this time, in the present embodiment, a liquid crystal display device having a 2ITO structure in which both the common electrode 108 and the pixel electrode 118 are formed of a transparent conductive material is described as an example, but the present invention is not limited thereto. When the electrode 108 is formed of the gate wiring, that is, the gate electrode 121 and the gate line 116, the opaque conductive material for the gate wiring is formed, and the pixel electrode 118 is formed of a transparent conductive material such as ITO. Can be applied.

At this time, the common electrode 108 and the pixel electrode 118 of the present embodiment made of ITO is patterned to have a fine line width, which will be described in detail through the following manufacturing process of the array substrate.

5A through 5C are cross-sectional views sequentially illustrating a manufacturing process along line IV-IV ′ of the array substrate illustrated in FIG. 4.

In this case, the present embodiment has been described using four mask processes, that is, four mask processes for forming an array substrate using four photolithography processes, but the present invention is not limited thereto. It can be applied regardless.

First, as shown in FIG. 5A, a gate electrode 121 is formed on a substrate 110 made of a transparent insulating material such as glass.

In this case, the gate electrode 121 is formed by depositing a first conductive material on the entire surface of the substrate 110 and then patterning it through a photolithography process (first mask process).

Here, the first conductive material may be aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), chromium (Cr), molybdenum (Mo), or the like. The same low resistance opaque conductive material can be used. In addition, the gate electrode 121 may be formed in a multilayer structure in which two or more low resistance conductive materials are stacked.

As illustrated in FIG. 5B, the first insulating layer 115A, the amorphous silicon thin film, the n + amorphous silicon thin film, and the second conductive material are sequentially deposited on the entire surface of the substrate 110 on which the gate electrode 121 is formed. Subsequently, the active layer 124 made of the amorphous silicon thin film and the second conductive material are selectively patterned by selectively patterning the amorphous silicon thin film, the n + amorphous silicon thin film and the second conductive material through a photolithography process (second mask process). The electrode 122, the drain electrode 123, and the data line 117 are formed.

The source electrode 122 and the drain electrode 123 are electrically connected to an ohmic contact layer 125 formed of an n + amorphous silicon thin film on the active layer 124 to form an active layer 124. An ohmic contact is made with a predetermined region. A portion of the source electrode 122 extends in one direction to form the data line 117, and a portion of the drain electrode 123 extends in another direction to form the pixel electrode line 118L.

In this case, in the second mask process, the active layer 124, the source / drain electrodes 122 and 123, and the data line 117 may be simultaneously formed in one mask process by using diffraction exposure.

However, the present invention is not limited thereto, and the source / drain electrodes 122 and 123 and the data line 117 may be formed through a separate mask process, that is, two mask processes different from the active layer 124. The active layer 124, the source / drain electrodes 122 and 123, and the data line 117 may be formed.

In this case, the first data line pattern 124 ′ formed of an amorphous silicon thin film and the second data line pattern formed of an n + amorphous silicon thin film are patterned under the data line 117 in the same shape as the data line 117. 125 ') is formed.

Next, as shown in FIG. 5C, a second insulating film 115B is formed on the entire surface of the substrate 110. The pixel electrode 118 and the common electrode 108 are formed on the substrate 110 by using a photolithography process (third and fourth mask processes) as a third conductive material.

In this case, the pixel electrode 118 is electrically connected to the pixel electrode line 118L through a first contact hole, and the third conductive material is indium tin oxide (ITO) or indium- It may be formed of a transparent conductive material having excellent transmittance such as indium zinc oxide (IZO).

In this case, the pixel electrode 118 and the common electrode 118 of the present exemplary embodiment are patterned to have a fine line width through two exposure processes, which will be described in detail with reference to the drawings.

6A through 6F are cross-sectional views illustrating in detail a process of forming the pixel electrode and the common electrode through the third and fourth mask processes illustrated in FIG. 5C.

As shown in FIG. 6A, a first photosensitive layer 170 made of a photosensitive material such as a photoresist is formed on the substrate 110 on which the second insulating layer 115B is formed.

Next, light is applied to the lower first photosensitive layer 170 by applying a predetermined mask 180 (primary exposure step) to form a first exposure area A in a predetermined region of the first photosensitive layer 170. To form (third mask step).

At this time, in the first embodiment, the first photosensitive film 170 is irradiated with light at an exposure amount smaller than, for example, about 1/2 or less in general in the first exposure process. The first exposure area A may not reach the lower portion of the first photosensitive film 170.

Next, as shown in FIG. 6B, the mask 180 is moved by a predetermined distance in one direction without developing. At this time, the movement distance is to be taken as the minimum unit that can be moved in the exposure equipment, for example, about 1 ~ 2㎛ to form an electrode pattern of fine line width as described above.

In addition, by applying the shifted mask 180 to irradiate light to the lower first photoresist layer 170 (second exposure process) to partially overlap the first exposure area A of the first photoresist layer 170. The second exposure area B is formed (fourth mask step).

In this case, in the second exposure process, the first photosensitive film 170 is irradiated with a light exposure amount smaller than that of a general exposure time, as in the first exposure process. The third exposure area C to which the light is overlapped and overlapped is formed even under the first photosensitive film 170.

Next, when the exposed photosensitive film 170 is developed, the photosensitive film of the first exposure area A, the second exposure area B, and the third exposure area C is removed as shown in FIG. 6C. The first photoresist pattern 170 ′ of the shape is formed.

The first contact hole 140A and the common electrode line exposing a portion of the pixel electrode line 118L by selectively patterning a lower second insulating layer 115B using the first photoresist pattern 170 ′ as a mask. A second contact hole (not shown) exposing a portion of the (not shown) and an open hole opening the second insulating film 115B under the third exposure area (C) to the same width as the third exposure area (C) 140H is formed.

In this case, the open open hole 140H of the second insulating layer 115B under the third exposure area C corresponds to a region where an electrode pattern having a fine line width is to be formed through the processes described below.

That is, as illustrated in FIG. 6D, the conductive film 150 made of a transparent conductive material such as ITO is formed on the entire surface of the substrate 110 on which the first photoresist film pattern 170 ′ is formed.

Next, a second photosensitive layer 270 is formed of a photosensitive material on the entire surface of the substrate 110. In this case, the second photoresist layer 270 is formed flat on the entire surface of the substrate 110 despite the step difference between the first contact hole 140A, the second contact hole, and the open hole 140H.

Thereafter, as illustrated in FIG. 6E, an ashing process of removing a part of the second photoresist layer 270 may be performed to remove the portions of the first contact hole 140A, the second contact hole, and the open hole 140H. The conductive film 150 is exposed to the outside. In this case, the second photoresist layer pattern 270 ′ whose part of the thickness is removed through the ashing process remains only on the first contact hole 140A, the second contact hole, and the open hole 140H.

When the etching process of the conductive layer 150 is performed, conductive layers other than the first contact hole 140A, the second contact hole, and the open hole 140H may be formed as illustrated in FIGS. 6F and 5C. Only 150 is selectively removed so that the pixel electrode 118 and the common electrode 108 formed of the conductive layer 150 are formed in the first contact hole 140A, the second contact hole, and the open hole 140H. Will be.

In this case, the pixel electrode 118 and the common electrode 108 have a fine line width substantially the same as the width of the third exposure area C.

At this time, the present embodiment has been described using an example of a four mask process for fabricating the array substrate using the four mask process, as described above, the present invention is not limited to this, the present invention is related to the number of mask process Is applied without.

In addition, in the above embodiment, an amorphous silicon thin film transistor using an amorphous silicon thin film as an active layer has been described as an example, but the present invention is not limited thereto, and the present invention is not limited thereto. The present invention also applies to a liquid crystal display device having a.

In addition, the present invention can be applied regardless of the mode of the liquid crystal display device, that is, the twisted nematic mode, the transverse electric field mode, and the vertical alignment (VA) mode.

In addition, the present invention can be used not only in liquid crystal display devices but also in other display devices fabricated using thin film transistors, for example, organic light emitting display devices in which organic light emitting diodes (OLEDs) are connected to driving transistors. have.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

As described above, the method of forming the electrode pattern and the method of manufacturing the liquid crystal display using the same according to the present invention can form a fine electrode pattern without an additional mask process, the aperture ratio when implemented in the pixel electrode and the common electrode in the pixel region This gives the effect of being improved.

Claims (28)

Providing a substrate having an insulating film formed thereon; Forming a first photosensitive film on the insulating film; Exposing a first region of the first photosensitive film with a first exposure dose through a mask; Moving the mask in one direction; Exposing a second region of the first photosensitive film with a second exposure amount through the mask; Developing the exposed first photoresist film to form a first photoresist pattern in which a first photoresist film of a third region overlapping the first region and the second region is removed; Removing an insulating film of a portion corresponding to the third region by using the first photoresist pattern as a mask; Forming a conductive film on the entire surface of the substrate in a state in which a first photoresist film pattern from which the first photoresist film of the third region is removed and an insulating film from which a portion corresponding to the third region is removed remain; Forming a second photosensitive film on the substrate on which the conductive film is formed; Selectively removing a thickness of the second photoresist film to leave only a second photoresist film of a portion corresponding to the third region; And Selectively removing the conductive film to form an electrode pattern formed of the conductive film under the second photosensitive film in a portion corresponding to the third region. The method of forming an electrode pattern according to claim 1, wherein the first exposure amount is less than an appropriate exposure amount exposed to the lower portion of the first photosensitive film. The method of forming an electrode pattern according to claim 2, wherein the second exposure amount is an exposure amount less than the appropriate exposure amount. delete The method of claim 1, wherein the third region is exposed to the lower portion of the first photosensitive film. delete The method of claim 1, wherein the third region is formed to have a width of 1 μm to 2 μm, which is a minimum distance that the mask can move. The method of claim 1, wherein the second photosensitive film pattern is formed by selectively removing the thickness of the second photosensitive film through an ashing process. The method of claim 8, further comprising completely removing the first photoresist pattern and the second photoresist pattern through a stripping process. Forming a switching element including a gate electrode, a gate line, an active layer, a source electrode, a drain electrode, and a data line on the substrate; Forming a protective film on the substrate on which the switching element is formed; Forming a first photoresist film on the passivation film; Exposing a first region of the first photosensitive film with a first exposure dose through a mask; Moving the mask in one direction; Exposing a second region of the first photosensitive film with a second exposure amount through the mask; Developing the exposed first photoresist film to form a first photoresist pattern in which a first photoresist film of a third region overlapping the first region and the second region is removed; Removing a protective film of a portion corresponding to the third region using the first photoresist pattern as a mask; Forming a conductive film on the entire surface of the substrate in a state in which a first photosensitive film pattern from which the first photoresist film of the third region is removed and a protective film from which a portion corresponding to the third region is removed remain; Forming a second photosensitive film on the substrate on which the conductive film is formed; Selectively removing a thickness of the second photoresist film to leave only a second photoresist film of a portion corresponding to the third region; And Selectively removing the conductive film to form an electrode pattern formed of the conductive film under the second photosensitive film in a portion corresponding to the third region. The method of manufacturing a liquid crystal display device according to claim 10, wherein the first exposure amount is less than an appropriate exposure amount exposed to the lower portion of the first photosensitive film. 12. The manufacturing method of a liquid crystal display device according to claim 11, wherein the second exposure amount is an exposure amount less than the appropriate exposure amount. delete The method of claim 10, wherein the third region is exposed to the lower portion of the first photosensitive film. delete The method of claim 10, wherein the third region is formed to have a width of 1 μm to 2 μm, which is a minimum distance that the mask can move. delete The method of claim 10, wherein the second photoresist pattern is formed by selectively removing the thickness of the second photoresist layer through an ashing process. 19. The method of claim 18, further comprising completely removing the first photoresist pattern and the second photoresist pattern through a stripping process. 11. The method of claim 10, further comprising the step of bonding the first substrate and the second substrate. delete delete The method of claim 10, wherein the electrode pattern comprises a pixel electrode. delete The method of claim 10, wherein the electrode pattern comprises a common electrode. delete The method of claim 10, wherein the conductive film is formed of a transparent conductive material such as indium tin oxide or indium zinc oxide. 26. The method of claim 23 or 25, wherein the third region is a region where the common electrode or the pixel electrode is formed.

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