KR101130331B1 - 서로 다른 높이를 갖는 융기 드레인 및 소스 영역들을구비한 트랜지스터를 형성하는 고급기술 - Google Patents

서로 다른 높이를 갖는 융기 드레인 및 소스 영역들을구비한 트랜지스터를 형성하는 고급기술 Download PDF

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KR101130331B1
KR101130331B1 KR1020067008385A KR20067008385A KR101130331B1 KR 101130331 B1 KR101130331 B1 KR 101130331B1 KR 1020067008385 A KR1020067008385 A KR 1020067008385A KR 20067008385 A KR20067008385 A KR 20067008385A KR 101130331 B1 KR101130331 B1 KR 101130331B1
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KR20060108641A (ko
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벤텀 랄프 반
스코트 러닝
톨스텐 캄러
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글로벌파운드리즈 인크.
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Priority claimed from DE10351008A external-priority patent/DE10351008B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020067008385A 2003-10-31 2004-09-17 서로 다른 높이를 갖는 융기 드레인 및 소스 영역들을구비한 트랜지스터를 형성하는 고급기술 Expired - Fee Related KR101130331B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10351008.7 2003-10-31
DE10351008A DE10351008B4 (de) 2003-10-31 2003-10-31 Verfahren zur Herstellung von Transistoren mit erhöhten Drain- und Sourcegebieten mit unterschiedlicher Höhe sowie ein Halbleiterbauelement
US10/862,518 US7176110B2 (en) 2003-10-31 2004-06-07 Technique for forming transistors having raised drain and source regions with different heights
US10/862,518 2004-06-07
PCT/US2004/031038 WO2005045924A1 (en) 2003-10-31 2004-09-17 An advanced technique for forming transistors having raised drain and source regions with different height

Publications (2)

Publication Number Publication Date
KR20060108641A KR20060108641A (ko) 2006-10-18
KR101130331B1 true KR101130331B1 (ko) 2012-03-27

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KR1020067008385A Expired - Fee Related KR101130331B1 (ko) 2003-10-31 2004-09-17 서로 다른 높이를 갖는 융기 드레인 및 소스 영역들을구비한 트랜지스터를 형성하는 고급기술

Country Status (4)

Country Link
JP (1) JP2007528123A (enExample)
KR (1) KR101130331B1 (enExample)
GB (1) GB2422488B (enExample)
WO (1) WO2005045924A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12432993B2 (en) 2022-05-25 2025-09-30 Samsung Electronics Co., Ltd. Integrated circuit devices

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060252191A1 (en) * 2005-05-03 2006-11-09 Advanced Micro Devices, Inc. Methodology for deposition of doped SEG for raised source/drain regions
DE102005030583B4 (de) * 2005-06-30 2010-09-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung von Kontaktisolationsschichten und Silizidgebieten mit unterschiedlichen Eigenschaften eines Halbleiterbauelements und Halbleiterbauelement

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US616582A (en) * 1898-12-27 Victor odqtjist and john c
US690636A (en) * 1900-12-19 1902-01-07 Joseph Coldwell Warp stop-motion for looms.
US5970351A (en) * 1994-10-12 1999-10-19 Nec Corporation Production method for a MISFET, complementary MISFET
US6235568B1 (en) * 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030582A (en) * 1988-10-14 1991-07-09 Matsushita Electric Industrial Co., Ltd. Method of fabricating a CMOS semiconductor device
JP2000124327A (ja) * 1998-10-14 2000-04-28 Toshiba Corp 半導体装置及びその製造方法
TW497120B (en) * 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
JP2002026313A (ja) * 2000-07-06 2002-01-25 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002043567A (ja) * 2000-07-27 2002-02-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2002231908A (ja) * 2001-02-06 2002-08-16 Mitsubishi Electric Corp 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US616582A (en) * 1898-12-27 Victor odqtjist and john c
US690636A (en) * 1900-12-19 1902-01-07 Joseph Coldwell Warp stop-motion for looms.
US5970351A (en) * 1994-10-12 1999-10-19 Nec Corporation Production method for a MISFET, complementary MISFET
US6235568B1 (en) * 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12432993B2 (en) 2022-05-25 2025-09-30 Samsung Electronics Co., Ltd. Integrated circuit devices

Also Published As

Publication number Publication date
GB2422488A (en) 2006-07-26
WO2005045924A1 (en) 2005-05-19
KR20060108641A (ko) 2006-10-18
GB0607742D0 (en) 2006-05-31
JP2007528123A (ja) 2007-10-04
GB2422488B (en) 2008-02-13

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