KR101123751B1 - 전자기기, 반도체장치 및 그의 제조방법 - Google Patents

전자기기, 반도체장치 및 그의 제조방법 Download PDF

Info

Publication number
KR101123751B1
KR101123751B1 KR1020067015626A KR20067015626A KR101123751B1 KR 101123751 B1 KR101123751 B1 KR 101123751B1 KR 1020067015626 A KR1020067015626 A KR 1020067015626A KR 20067015626 A KR20067015626 A KR 20067015626A KR 101123751 B1 KR101123751 B1 KR 101123751B1
Authority
KR
South Korea
Prior art keywords
substrate
conductive film
wiring
film
electrode
Prior art date
Application number
KR1020067015626A
Other languages
English (en)
Korean (ko)
Other versions
KR20070007078A (ko
Inventor
신지 마에가와
순페이 야마자키
히로노부 쇼지
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20070007078A publication Critical patent/KR20070007078A/ko
Application granted granted Critical
Publication of KR101123751B1 publication Critical patent/KR101123751B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
KR1020067015626A 2004-01-26 2005-01-24 전자기기, 반도체장치 및 그의 제조방법 KR101123751B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00017608 2004-01-26
JPJP-P-2004-00017583 2004-01-26
JP2004017583 2004-01-26
JP2004017608 2004-01-26
PCT/JP2005/001286 WO2005071478A1 (fr) 2004-01-26 2005-01-24 Appareil electrique, dispositif a semi-conducteur, et procede de fabrication

Publications (2)

Publication Number Publication Date
KR20070007078A KR20070007078A (ko) 2007-01-12
KR101123751B1 true KR101123751B1 (ko) 2012-03-15

Family

ID=34810138

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067015626A KR101123751B1 (ko) 2004-01-26 2005-01-24 전자기기, 반도체장치 및 그의 제조방법

Country Status (3)

Country Link
JP (1) JP5386547B2 (fr)
KR (1) KR101123751B1 (fr)
WO (1) WO2005071478A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
TWI675243B (zh) 2006-05-16 2019-10-21 日商半導體能源研究所股份有限公司 液晶顯示裝置
US8110450B2 (en) 2007-12-19 2012-02-07 Palo Alto Research Center Incorporated Printed TFT and TFT array with self-aligned gate
KR20110039454A (ko) * 2008-08-04 2011-04-18 더 트러스티즈 오브 프린스턴 유니버시티 박막 트랜지스터용 하이브리드 유전 재료
EP2284891B1 (fr) 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Dispositif de semi-conducteurs et son procédé de fabrication
KR102528026B1 (ko) 2009-09-04 2023-05-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
CN109716491B (zh) 2016-09-16 2023-06-09 东丽株式会社 场效应晶体管的制造方法及无线通信设备的制造方法
CN115665926B (zh) * 2022-11-14 2023-03-10 灿芯半导体(成都)有限公司 一种二阶充放电电路的led驱动芯片

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100238510B1 (ko) * 1995-08-23 2000-01-15 니시무로 타이죠 박막트랜지스터와 그 제조방법 및 이를 이용한 액정표시장치
KR20000077040A (ko) * 1999-04-19 2000-12-26 이데이 노부유끼 반도체 박막을 결정화하는 방법 및 레이저 조사 시스템

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661257A (ja) * 1992-08-05 1994-03-04 Dainippon Printing Co Ltd 薄膜トランジスタおよびその製造方法
JPH09260678A (ja) * 1996-03-27 1997-10-03 Canon Inc 薄膜半導体装置の製造方法
JPH1165771A (ja) * 1997-08-25 1999-03-09 Kanto Bussan Kk タッチパネル用電極基板およびその製造方法
JP2000258921A (ja) * 1999-03-10 2000-09-22 Canon Inc パターン形成方法およびその形成パターン
JP4250345B2 (ja) * 2000-02-08 2009-04-08 キヤノン株式会社 導電性膜形成用組成物、導電性膜の形成方法および画像形成装置の製造方法
JP4572501B2 (ja) * 2002-02-27 2010-11-04 コニカミノルタホールディングス株式会社 有機薄膜トランジスタの製造方法
KR100878236B1 (ko) * 2002-06-12 2009-01-13 삼성전자주식회사 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100238510B1 (ko) * 1995-08-23 2000-01-15 니시무로 타이죠 박막트랜지스터와 그 제조방법 및 이를 이용한 액정표시장치
KR20000077040A (ko) * 1999-04-19 2000-12-26 이데이 노부유끼 반도체 박막을 결정화하는 방법 및 레이저 조사 시스템

Also Published As

Publication number Publication date
JP5386547B2 (ja) 2014-01-15
JP2011187995A (ja) 2011-09-22
KR20070007078A (ko) 2007-01-12
WO2005071478A1 (fr) 2005-08-04

Similar Documents

Publication Publication Date Title
US7691685B2 (en) Method for manufacturing semiconductor device
KR101123089B1 (ko) 발광 장치, 전자 기기 및 텔레비젼 장치
KR101168907B1 (ko) 표시장치
KR101193417B1 (ko) 표시 장치, 그 제조 방법, 및 텔레비전
US7491590B2 (en) Method for manufacturing thin film transistor in display device
KR101127889B1 (ko) 박막 트랜지스터, 표시장치 및 그것들의 제조 방법
US7416977B2 (en) Method for manufacturing display device, liquid crystal television, and EL television
KR101123751B1 (ko) 전자기기, 반도체장치 및 그의 제조방법
JP2005244204A (ja) 電子機器、半導体装置およびその作製方法
JP4731970B2 (ja) 発光装置及びその作製方法
JP5110785B2 (ja) 表示装置の作製方法
JP5057652B2 (ja) 薄膜トランジスタの作製方法
JP4969041B2 (ja) 表示装置の作製方法
US20070262318A1 (en) Method for manufacturing display device
US20050196711A1 (en) Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television
JP4854994B2 (ja) 配線基板の作製方法及び薄膜トランジスタの作製方法
JP5089027B2 (ja) 半導体装置
JP2005328037A (ja) 膜パターンの形成方法、半導体装置の作製方法、液晶テレビジョン、及びｅｌテレビジョン
JP5116212B2 (ja) 薄膜トランジスタの作製方法
JP4879496B2 (ja) パターン形成方法
JP4884675B2 (ja) 半導体装置の作製方法
JP2005311341A (ja) 半導体装置、及びその作製方法、液晶テレビジョン、並びにｅｌテレビジョン

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150120

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160127

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170201

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee