KR101123751B1 - Electric appliance, semiconductor device, and method for manufacturing the same - Google Patents

Abstract

At present, many film-forming methods which use the spin coat method for a manufacturing process are used. If the substrate is further enlarged in the future, the film formation method using the spin coating method is considered to be disadvantageous in mass production because of the large scale of the mechanism for rotating the large substrate, the loss of material liquid, and the large amount of waste liquid. . In the manufacturing process of a semiconductor device, a fine wiring pattern is realized by selectively discharging a photosensitive conductive film material liquid by a droplet discharging method, selectively exposing with a laser beam or the like, and then developing. In the process of forming a conductor pattern, the present invention can shorten the patterning step and can reduce the amount of material used, so that a significant cost reduction can be realized. Therefore, the present invention can also correspond to a large area substrate.

Semiconductor device, thin film transistor, droplet ejection method, conductor pattern

Description

ELECTRIC APPLIANCE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to a semiconductor device having a circuit composed of a thin film transistor (hereinafter referred to as TFT) and a method of manufacturing the same. More specifically, the present invention relates to an electronic device equipped with a light emitting display device having an organic light emitting element and an electro-optical device represented by a liquid crystal display panel.

In this specification, "semiconductor device" refers to the general apparatus which can function by using semiconductor characteristics, such as an electro-optical device, a semiconductor circuit, and an electronic device.

In recent years, the technique which comprises a thin film transistor TFT using the semiconductor thin film (about several to several hundred nm in thickness) formed on the board | substrate which has an insulating surface attracts attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and have been particularly developed as switching elements of image display devices.

As the image display device, a liquid crystal display device is generally well known. Since the active matrix liquid crystal display device obtains a finer image as compared with the passive matrix liquid crystal display device, the active matrix liquid crystal display device is used as an image display device. In an active matrix liquid crystal display device, a display pattern is formed on a screen by driving pixel electrodes arranged in a matrix. Specifically, by applying a voltage between the selected pixel electrode and the counter electrode corresponding to the pixel electrode, optical modulation of the liquid crystal layer interposed between the pixel electrode and the counter electrode occurs, and the optical modulation is a display pattern. As recognized by the observer.

Conventionally, the production technique which cuts out several liquid crystal display panels from a single mother glass substrate, and performs mass production efficiently has been employ | adopted. The size of the mother glass substrate became the 4th generation in 2000 from 300x400mm of the 1st generation in the early 1990s, and enlarged to 680x880mm or 730x920mm. At the same time, production technology has advanced so that a large number of display panels can be obtained from a single substrate.

In recent years, the research of the light-emitting device which has an EL element as a self-luminous light-emitting element is active. This light emitting device is also called an organic EL display or an organic light emitting diode. Since these light emitting devices have characteristics such as fast response speed, low voltage, low power consumption driving, etc., which are suitable for moving picture display, they are attracting great attention as next generation displays, including new generation mobile phones and portable information terminals (PDAs).

The EL element is provided with a layer containing an organic compound as an anode, a cathode, and a light emitting layer (hereinafter referred to as an EL layer) interposed between the anode and the cathode. Light is emitted from the EL layer by applying electric fields to the anode and the cathode. Light emission from the EL element includes fluorescence generated when returning from the singlet excited state to the ground state and phosphorescence when returning from the triplet excited state to the ground state.

The application range of the active matrix display device is being expanded. Along with the large size of the screen, the demand for high definition, high aperture ratio, and high reliability is increasing.

In Japanese Patent Laid-Open No. 2000-298446, a large display is realized by arranging a plurality of panels in a tile shape to form one display screen. However, since this large display uses a plurality of panels, the cost is high, and the driving method becomes special.

In addition to increasing the screen size, demands for productivity improvement and cost reduction are also increasing.

Moreover, in order to improve the yield of the liquid required for film-forming, the technique of carrying out film-forming on a semiconductor wafer using the apparatus which can continuously discharge a resist liquid in the form of a line of minute diameter from a nozzle is described in Unexamined-Japanese-Patent No. 2000-188251.

At present, many film-forming methods which use the spin coat method for a manufacturing process are used. If the substrate is further enlarged in the future, the film formation method using the spin coating method is considered to be disadvantageous in mass production in that the mechanism for rotating the large substrate becomes large, the loss of material liquid, and the large amount of waste liquid. . In addition, when the square substrate is spin-coated with the material liquid, the coating film tends to be nonuniform, that is, circular stains around the rotating shaft are likely to occur in the coating film. This invention provides the manufacturing process using the droplet ejection method suitable for manufacturing a large sized board | substrate on mass production.

In view of the foregoing, an object of the present invention is to provide a large screen display using a wiring formed by the droplet ejection method, and a manufacturing method thereof. It is still another object of the present invention to provide a light emitting device in which a TFT having a channel length of 10 μm or less is disposed in a pixel with a wiring width formed by the droplet ejection method as a desired electrode width.

It is still another object of the present invention to provide an crystal display device in which TFTs having a channel length of 10 μm or less are arranged in pixels with wirings formed by the droplet ejection method as desired electrode widths.

According to the present invention, a fine wiring pattern can be realized by selectively discharging the photosensitive conductive film material liquid by the droplet discharging method, selectively exposing and then developing. In the process of forming a conductor pattern, the present invention can shorten the patterning step and can reduce the amount of material used, so that a significant cost reduction can be realized. Therefore, the present invention can also correspond to a large area substrate.

The conductive film material solution contains a photosensitive resin comprising a metal or an alloy such as Ag, Au, Cu, Ni, Al, Pt, an organic polymer resin, a photopolymerization initiator, a photopolymerization monomer, a solvent, or the like. As the organic polymer resin, a novolak resin, an acrylic copolymer, a methacryl copolymer, a cellulose derivative, a cyclized rubber resin, or the like is used.

Photosensitive materials are broadly divided into negative type and positive type. In the case of using a negative photosensitive material, a chemical reaction occurs in the exposed portion, and only a portion in which the chemical reaction is caused by the developer is left to form a pattern. In addition, in the case of using a positive photosensitive material, a chemical reaction occurs in the exposed portion, and the portion in which the chemical reaction has occurred is dissolved, leaving only the unexposed portion to form a pattern.

In addition, since the wiring width is determined by the irradiation accuracy of the laser beam, the desired wiring width can be obtained regardless of the drop amount, viscosity, or nozzle diameter to be dropped. Usually, the wiring width is changed at the contact angle between the material liquid discharged from the nozzle and the substrate. For example, the quantity discharged from 50 micrometers x 50 micrometers which is one nozzle diameter of a standard inkjet apparatus is 30-200 pl, and the wiring width obtained is 60-300 micrometers. According to the present invention exposed to the laser beam, a narrow wiring (for example, electrode width of 3 µm to 10 µm in electrode width) can be obtained. Moreover, with the nozzle diameter finer than the standard, the quantity discharged from one nozzle is 0.1-40 pl, and the wiring width obtained is 5-100 micrometers.

In addition, when the wiring pattern is formed by the droplet ejection method, there are two cases in which the conductive film material droplets are intermittently discharged from the nozzles, and the droplets are dropped in the form of dots, and the materials are continuously discharged from the nozzles to attach the string-like material. . In this invention, what is necessary is just to form a wiring pattern by discharging a conductive material in a wiring pattern to either a dot or a string suitably. In the case of forming a wiring pattern having a relatively large width, it is better to produce a wiring pattern by discharging the conductive material from the nozzle in the form of a string.

Moreover, before forming a wiring pattern by the droplet discharge method, it is preferable to form the base layer which improves adhesiveness on a whole surface or selectively. Alternatively, the lower limb pretreatment may be performed. As to the formation of the layer, the photocatalyst material by the spraying method or a sputtering method (titanium oxide (TiO _x), strontium titanate (SrTiO _3), selenide, cadmium (CdSe), tantalate, potassium (KTaO _3), cadmium sulfide (CdS) , A treatment in which zirconium oxide (ZrO ₂ ), niobium oxide (N ₂ O ₅ ), zinc oxide, iron oxide (Fe ₂ O ₃ ), and tungsten oxide (ZO ₃ ) are added dropwise to the entire surface. In contrast, a skeletal structure is formed by combining an organic material (polyimide, acrylic, or silicon (Si) and oxygen (O)) using an inkjet method or a sol-gel method, and the substituents are hydrogen, fluorine, alkyl groups or aromatic hydrocarbons. What is necessary is just to perform the process which selectively forms the coating insulating film using the material which has at least 1 sort (s).

The photocatalyst material refers to a material having a photocatalytic function, and irradiates light (wavelength: 400 nm or less, preferably 380 nm or less) in the ultraviolet light region to generate photocatalytic activity. When the conductor mixed in the solvent is discharged by the droplet ejection method represented by the inkjet method on the photocatalytic material, fine drawing can be performed.

Before irradiation light to TiO _x, TiO _x is lipophilic but hydrophilic is in the free, that is, TiOx is state of the water repellent. By irradiating with light, TiOx generates photocatalytic activity, resulting in a state without lipophilic properties. In addition, TiOx may be in a state having both hydrophilicity and lipophilicity by light irradiation time.

Furthermore, by doping transition metals (Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, W, etc.) to the photocatalytic material, photocatalytic activity can be improved or light in the visible region (wavelength 400 nm to 800 nm) can be improved. Can cause photocatalytic activity. As such, since the wavelength of light can be determined by the photocatalytic material, light irradiation refers to irradiation of light having a wavelength for photocatalytic activation of the photocatalytic material.

Moreover, you may discharge the conductor mixed in the solvent by the droplet ejection method represented by the inkjet method, performing light irradiation.

It is also possible to modify only the irradiated area by forming a photocatalytic material on the entire surface which can cause photocatalytic activity by the wavelength of the laser light, and then selectively irradiating the photocatalytic material with laser light. Moreover, you may discharge the conductor mixed in the solvent by the droplet discharge method represented by the inkjet method, performing laser beam irradiation.

Under the present circumstances, hydrophilic refers to the state which is easy to get wet with water. A state where the contact angle is 30 degrees or less, in particular, the contact angle is 5 degrees or less is referred to as superhydrophilicity. On the other hand, water repellency refers to a state that is hard to get wet with water, and refers to a contact angle of 90 degrees or more. Similarly, lipophilic refers to a state that is easy to get wet with oil, and oil-repellent refers to a state which is hard to get wet with oil. In addition, a contact angle refers to the angle which the tangent of a surface and a droplet has in the edge of the dripped dot.

When the wiring is formed by the liquid droplet discharging method using the conductive film material liquid, when the conductive film material liquid has fluidity or the fluidity increases at the time of baking, it is difficult to make a fine pattern by dropping the liquid. There is a concern. In addition, when the wiring spacing is narrow, the patterns may be connected to each other. In the present invention, even when a wide pattern is formed, a fine pattern is obtained by mixing a photosensitive material with the conductive film material liquid and precisely exposing and developing with a laser beam.

For example, when manufacturing a large-area display, it is preferable that a bus line such as a gate wiring be a wide wiring obtained by the droplet ejection method, but the gate electrode is preferably a narrow wiring. In this case, the gate wiring and the first gate electrode are formed with the conductive film material liquid containing the positive photosensitive material, and only the portion of the first gate electrode (the portion to be removed) is irradiated with the laser light selectively, and the laser irradiation By developing the part, the second gate electrode finely processed by the development can be formed. When the gate wiring and the first gate electrode are formed from the conductive film material liquid containing the negative photosensitive material, only the portions of the gate wiring and the first gate electrode (the portions to be left) are irradiated with the laser beam selectively, and the laser By developing the light irradiation part, the second gate electrode finely processed by development can be formed.

In addition to the gate electrode of the TFT, the source electrode, the drain electrode, the anode of the light emitting element, the cathode of the light emitting element, the power supply line, the lead-out wiring, and the like can be formed.

In addition, depending on the wavelength of the laser light, light can pass through the glass substrate. The back surface exposure of a glass substrate can be performed using this laser beam. By exposing from the back surface of a glass substrate, the electrically conductive film material of an interface vicinity can be exposed first. Thereby, the adhesiveness of a wiring and a base layer or the adhesiveness of a wiring and a board | substrate can be improved.

In the case of manufacturing the bottom gate type TFT, the source electrode and the drain electrode can be formed in a self-aligned manner by using the gate electrode as a mask by backside exposure.

A semiconductor layer comprising a gate wiring or a gate electrode formed on an insulating surface of a first substrate, a gate insulating film formed on the gate wiring or a gate electrode, a channel forming region on the gate insulating film, and a semiconductor layer formed on the semiconductor layer. A source electrode or a drain electrode, and a pixel electrode formed on the source electrode or the drain electrode, wherein the channel formation region has a channel length that is equal to a width of the gate electrode, and the gate electrode has the source electrode and the drain electrode. Provided is a semiconductor device having a width equal to an interval between and.

In the above structure, the active layer of the thin film transistor is a non-single crystal semiconductor film or a polycrystalline semiconductor film to which hydrogen or halogen hydrogen is added.

It is also possible to apply the present invention irrespective of the TFT structure. For example, it is possible to use a bottom gate type (reverse staggered type) TFT or a top gate type (forward staggered type) TFT. The present invention is not limited to the TFT having a single gate structure, but may be formed of a multi-gate type TFT having a plurality of channel formation regions, for example, a double gate type TFT.

As the active layer of the TFT, an amorphous semiconductor film, a semiconductor film containing a crystal structure, a compound semiconductor film containing an amorphous structure, or the like can be suitably used. Furthermore, as an active layer of TFTs, a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystals and polycrystals) and having a free energy stable third state is a crystalline region having short-range order and lattice distortion. A semi-amorphous semiconductor film (also referred to as a micro crystal semiconductor film) containing the same can also be used.

Moreover, in each said structure, the said source electrode or the said drain electrode contains the photosensitive material, It is characterized by the above-mentioned.

In a pattern formation method, such as a conductive layer using the droplet ejection method, the pattern formation material processed into particle shape is discharged, and a pattern is formed by fuse | melting, fusion bonding, and solidifying the discharged material by baking. Therefore, while most of the patterns formed by the sputtering method and the like exhibit columnar structures, the patterns often exhibit polycrystalline states having many grain boundaries.

In addition, the conductive layer obtained by using the liquid droplet discharging method is one of the characteristics of being a material containing resin. This resin is a material such as a binder contained in a droplet containing a conductive material. By mixing this resin, a solvent, and metal nanoparticles, a material can be discharged by the inkjet method.

In each of the above configurations, the semiconductor device has a first substrate, a second substrate, and a liquid crystal interposed between the first substrate and the second substrate. Alternatively, the semiconductor device has a plurality of light emitting elements each having a cathode, a layer containing an organic compound, an anode, and a thin film transistor.

In each of the above configurations, the semiconductor device is a video / audio bidirectional communication device or a general purpose remote control device, which is shown in FIG. 3D as an example thereof.

The present invention also provides a method of forming a first conductive film pattern by discharging a conductive film material containing a photosensitive material on a dielectric surface of a substrate by a droplet discharging method, and selectively applying the first conductive film pattern to a laser beam. Exposing, developing the exposed first conductive film pattern to form a second conductive film pattern that is narrower in width than the first conductive film pattern, and forming a gate insulating film covering the second conductive film pattern. And forming a semiconductor film on the gate insulating film.

In addition, in the said structure, the electrically conductive film material containing the said photosensitive material contains the group of Ag, Aug, Cu, Ni, Ai, Pt, or these compound.

In the above configuration, the photosensitive material is a negative or positive photosensitive material.

The present invention also provides a method of forming a gate electrode on an insulating surface of a substrate, forming a gate insulating film covering the gate electrode, forming a first semiconductor film on the gate insulating film, and forming the first semiconductor film. Forming a second semiconductor film including an impurity element imparting an n-type or an ｐ-type on the film; and discharging a conductive film material containing a positive photosensitive material on the second semiconductor film by a droplet ejection method to form a first semiconductor film. Forming a conductive film pattern, selectively irradiating the first conductive film pattern with a laser beam at a surface side of the substrate, and developing the exposed first conductive film pattern to produce a source electrode and a drain electrode. Forming and etching the first semiconductor film and the second semiconductor film using the source electrode and the drain electrode as a mask. It provides a method for manufacturing a semiconductor device comprising the system.

The present invention also provides a method of forming a gate electrode on an insulating surface of a substrate, forming a gate insulating film covering the gate electrode, forming a first semiconductor film on the gate insulating film, and forming the first semiconductor film. Forming a second semiconductor film containing an impurity element imparting an n-type or an X-type on the film; and discharging a conductive film material containing a negative photosensitive material on the second semiconductor film by a droplet ejection method to form a first semiconductor film. Forming a conductive film pattern, selectively exposing the first conductive film pattern by irradiating a laser beam with the gate electrode as a mask on the back side of the substrate, and developing the exposed first conductive film pattern Forming a source electrode and a drain electrode in a self-aligning manner so as to have an interval equal to the width of the gate electrode; A method of manufacturing a semiconductor device comprising the step of etching the first semiconductor film and the second semiconductor film by using a pole and a drain electrode as a mask.

According to the present invention, a fine wiring pattern can be obtained even by the droplet discharging method. In addition, the present invention can shorten the patterning step and reduce the amount of material used, thereby achieving a significant cost reduction. Therefore, the present invention can also correspond to a large area substrate.

1A to 1E are cross-sectional views illustrating a manufacturing process of an active matrix light emitting device.

2A to 2D are sectional views showing the manufacturing process of the active matrix light emitting device.

3 is a plan view of a pixel;

4 shows a laser beam drawing apparatus;

5S to 5D show manufacturing steps of the light emitting device. (Embodiment 2)

6A to 6D show manufacturing steps of the light emitting device. (Embodiment 3)

7A to 7D show manufacturing steps of the light emitting device. (Embodiment 4)

Fig. 8 is a sectional view showing a channel stop type TFT. (Embodiment 5)

Fig. 9 is a sectional view showing a forward stagger type TFT. (Embodiment 6)

Fig. 10 is a plan view of the light emitting display device of the present invention.

Fig. 11 is a plan view of a light emitting display device of the present invention.

12A to 12C are cross-sectional views showing an example of a light emitting device. (Example 2)

13A to 13F are exemplary views for explaining the configuration of pixels applicable to an EL display panel of the present invention.

14A to 14C are cross-sectional views of the light emitting display module. (Example 4)

15A to 15C are a plan view and a sectional view of a display panel. (Example 5)

16 is a perspective view showing the droplet ejection apparatus. (Example 7)

17A to 17E are cross-sectional views illustrating a process for producing AM-LCD. (Embodiment 7)

18A to 18D are cross-sectional views showing the manufacturing process of AM-LCD. (Embodiment 7)

19 is a diagram showing a pixel plan view. (Embodiment 7)

20A to 20D show a manufacturing process of the liquid crystal display. Embodiment 8

21A to 21D show manufacturing steps of the liquid crystal display device. (Embodiment 9)

22A to 22D show manufacturing steps of the liquid crystal display device. (Embodiment 10)

Fig. 23 is a sectional view showing a channel stop type TFT. (Embodiment 11)

24 is a cross-sectional view showing a forward staggered TFT. (Embodiment 12)

25A to 25D are perspective views and cross-sectional views in which liquid crystal dropping is performed by the droplet discharging method. (Example 6)

26A to 26D show a process plan view. (Example 6)

27A and 27B are sectional views showing the bonding apparatus and the bonding process. (Example 6)

2A and 28B are plan views of the liquid crystal module. (Example 6)

Fig. 2 is a cross-sectional structure diagram of an active matrix liquid crystal display device. (Example 6)

30 is a block diagram showing a driving circuit. (Example 6)

Fig. 31 is a circuit diagram showing a driving circuit. (Example 6)

Fig. 32 is a circuit diagram showing a driving circuit. (Example 6)

33A to 33D show examples of electronic devices.

Embodiments of the present invention will be described below.

Embodiment 1

1A to 2D illustrate a method of manufacturing an active matrix type light emitting display device using a channel etch type TFT as a switching element.

First, the base layer 11 for improving the adhesiveness of the board | substrate 10 and a material layer by the droplet ejection method formed later on the board | substrate 10 is formed. Since the base layer 11 should just be formed very thin, it does not necessarily need to have a layer structure. The formation of the base layer 11 can also be regarded as a base pretreatment. Photocatalytic material (titanium oxide (TiO _x ), strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (ＫTaO3), cadmium sulfide (CdS), zirconium oxide (ＺrO ₂ ) by spraying or sputtering Niobium oxide (Nb ₂ O ₅ ), zinc oxide (Fe), iron oxide (Fe ₂ O ₃ ), and tungsten oxide (산화 O ₃ )) are added dropwise to the entire surface. In contrast, a skeletal structure is formed by combining an organic material (polyimide, acrylic, or silicon (Si) and oxygen (O)) using an inkjet method or a sol-gel method, and the substituents are hydrogen, fluorine, alkyl groups or aromatic hydrocarbons. What is necessary is just to perform the process which selectively forms the coating insulating film using the material which has at least 1 sort (s).

Here, an example of performing a ground pretreatment which improves adhesiveness when discharging a conductive material onto a substrate is shown. However, the present invention is not particularly limited thereto. In the case of forming another material layer (for example, an organic layer, an inorganic layer, or a metal layer) on the material layer (for example, an organic layer, an inorganic layer, or a metal layer) or the discharged conductive layer by the droplet ejection method, the material layer and You may perform TiO _x film-forming process for improving adhesiveness with another material layer. That is, in the case where the conductive material is discharged and drawn by the droplet ejection method, it is preferable to sandwich the pretreatment at the interface between the upper conductive material layer and the lower conductive material layer to improve its adhesion.

The base layer 11 is not limited to a photocatalyst material, and may be a 3d transition metal (Sc, Ti, Cr, Ni, V, Mn, Fe, Co, Cu, Vin, etc.), or an oxide, nitride, oxynitride thereof. Can be used.

In addition, the substrate 10 can withstand the processing temperature of the present manufacturing process, in addition to an alkali-free glass substrate produced by a fusion method or a float method, such as barium borosilicate glass, alumino borosilicate glass, or aluminosilicate glass. The plastic substrate etc. which have heat resistance can be used.

Subsequently, the conductive film material liquid is dripped by the droplet ejection method, typically the inkjet method, and the conductive film pattern 12 is formed (FIG. 1A). Examples of the conductive material included in the conductive film material solution include gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), and tantalum (Ta). , Bismuth, lead, indium, tin, tin, zinc, titanium, or aluminum, alloys thereof, dispersible nanoparticles thereof, or Fine particles of silver halides are used. In particular, it is preferable to reduce the gate wirings. Therefore, in consideration of the specific resistance value, it is suitable to use a material in which one of gold, silver and copper is dissolved or dispersed in a solvent. More suitably, low resistance silver and copper may be used. However, when silver and copper are used, a barrier film may be provided together to prevent impurity diffusion. The solvent corresponds to esters such as butyl acetate, alcohols such as isopropyl alcohol, organic solvents such as acetone and the like. Surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant.

Here, an example of a droplet ejection apparatus is shown in FIG.

In Fig. 16, 1500 denotes a large substrate, 1504 an imaging means, 1507 a stage, 1511 a marker, and 1503 an area where one panel is formed. The droplet ejection apparatus includes heads 1505a, 1505b, and 1505c having the same width as the width of one panel, and moves the stage to scan, for example, zigzag or reciprocate these heads to form a pattern of a material layer appropriately. do. Although it is also possible to set it as the head of the same width | variety of a large board | substrate, it is easy to operate to match one panel size as shown in FIG. In addition, in order to improve the throughput, it is preferable to discharge the material while moving the stage.

In addition, it is preferable that the heads 1505a, 1505b, 1505c and the stage 1507 have a temperature control function.

The distance between the head (nozzle tip) and the large substrate is about 1 mm. By shortening this interval, impact accuracy can be improved.

In Fig. 16, the heads 1505a, 1505b, and 1505c arranged in three rows in the scanning direction may be able to form different material layers, respectively, or may discharge the same material. Throughput is improved when the same material is discharged by three heads to form an interlayer insulating film.

In addition, the apparatus shown in FIG. 16 can fix a head part, and moves and scans the board | substrate 1500, or it can also fix the board | substrate 1500 and moves and scans a head part.

Each head 1505a, 1505b, 1505c of the droplet ejection means is connected to the control means. These heads can draw preprogrammed patterns by controlling the control means with a computer. The discharge amount is controlled by the pulse voltage to be applied. The timing of drawing may be performed based on the marker formed on the board | substrate, for example. Alternatively, the reference point may be determined based on the edge of the substrate. The reference point is detected by an imaging means such as a CD, and the computer recognizes that the image processing means converts the digital signal to generate a control signal. The control signal is then sent to the control means. Of course, the information of the pattern to be formed on the substrate is stored in the storage medium. By sending a control signal to the control means, it is possible to individually control each head of the droplet discharging means.

Subsequently, a laser beam is selectively irradiated to expose a portion of the conductive film pattern (FIG. 1B). The photosensitive material is previously contained in the conductive film material liquid to be discharged, and is chemically reacted by the laser beam to be irradiated. Here, the photosensitive material has shown the example which made into the negative form leaving the part irradiated and chemically reacted. By irradiation of a laser beam, an accurate pattern shape, especially the wiring of a minute width can be obtained.

Here, the laser beam drawing apparatus will be described with reference to FIG. 4. The laser beam drawing apparatus 401 includes a personal computer (hereinafter referred to as a PC) 402 which executes various controls when irradiating a laser beam, a laser oscillator 403 for outputting a laser beam, and a laser oscillator ( Power supply 404 of the 403, an optical system (ND filter) 405 for attenuating the laser beam, an acousto-optic modulator (AMO) 406 for modulating the intensity of the laser beam, and an enlarged cross section of the laser beam Alternatively, the digital analog conversion of the control system output from the PC and the substrate movement mechanism 409 having the optical system 40, the X stage and the Y stage composed of a lens for reducing the lens, a mirror for changing the optical path, and the like. The D / A converter 410, a driver 411 for controlling the acoustooptic modulator 406 according to the analog voltage output from the D / A converter, and a drive signal for driving the substrate moving mechanism 409. With a driver 412 to output There.

As the laser oscillator 403, a laser oscillator capable of oscillating ultraviolet light, visible light or infrared light can be used. As the laser oscillator, KrF, ArF, KrF, XeCl , excimer laser oscillator, He, such as Xe, He-Cd, Ar, He-Ne, a gas laser oscillator such as _{HF, YAG, GdVO 4, YVO} 4, YLF, YAlO 3 Solid laser oscillators using crystals doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm for crystals such as semiconductors, semiconductor laser oscillators such as BAN, BAAS, BAAS, AS, INNAASP. In the solid state laser oscillator, it is preferable to apply the first to fifth harmonics of the fundamental wave.

The photosensitive method of the photosensitive material using a laser beam direct drawing apparatus is demonstrated below. In addition, the photosensitive material here refers to the electrically conductive film material (including photosensitive material) used as a conductive film pattern.

When the board | substrate 408 is attached to the board | substrate movement mechanism 409, the PC 402 detects the position of the marker which is affixed on a board | substrate with the camera which is not shown in figure. Subsequently, the PC 402 generates movement data for moving the substrate movement mechanism 409 based on the detected position data of the marker and the drawing pattern data input in advance. Thereafter, the PC 402 controls the output light amount of the acoustooptic modulator 406 through the driver 411, so that the laser beam output from the laser oscillator 403 is attenuated by the optical system 405, and then the sound is The amount of light is controlled by the optical modulator 406 to reach a predetermined amount of light. On the other hand, the laser beam output from the acoustooptic modulator 406 is condensed by the lens by changing the optical path and beam shape in the optical system 407. Thereafter, a laser beam irradiates the beam to the photosensitive material formed on the substrate to photosensitive the photosensitive material. At this time, the movement of the substrate movement mechanism 409 in the X direction and the Y direction is controlled in accordance with the movement data generated by the PC 402. As a result, a laser beam is irradiated to a predetermined spot, and the photosensitive material is exposed.

In addition, part of the energy of the laser light irradiated to the photosensitive material is converted into heat to react a part of the photosensitive material. Therefore, the pattern width is slightly larger than the width of the laser beam. In addition, the shorter the wavelength of the laser light, the smaller the beam diameter can be focused. Therefore, in order to form a fine width pattern, it is preferable to irradiate the short wavelength laser beam.

In addition, the spot shape on the photosensitive material surface of a laser beam is processed by the optical system so that it may become a point form, circular shape, an elliptical shape, square shape, or a line shape (strictly elongate rectangle). In addition, the spot shape may be circular. However, the straighter the laser beam, the more uniform the width can be formed.

In addition, the laser beam drawing apparatus shown in FIG. 4 shows the example which irradiates and irradiates a laser beam from the surface side of a board | substrate. However, it is good also as a laser beam drawing apparatus which changes an optical system and a board | substrate movement mechanism suitably, and irradiates and exposes a laser beam from the back surface side of a board | substrate.

In this case, the laser beam is selectively irradiated by moving the substrate. However, the present invention is not limited to this. The laser beam can be irradiated by scanning the laser beam in the X-Y axis direction. In this case, it is preferable to use a polygon mirror or a galvano mirror for the optical system 407.

Subsequently, development is performed using an etchant (or developer), and excess portions are removed, and main firing is performed to form metal wirings 15 serving as gate electrodes or gate wirings (FIG. 1C).

In addition, similarly to the metal wiring 15, the wiring 40 that reaches the terminal portion is also formed. In addition, although not shown here, you may also form the power supply line for supplying electric current to a light emitting element. Capacitive electrodes or capacitor wirings for forming storage capacities are also formed if necessary.

In addition, when using a positive photosensitive material, what is necessary is just to irradiate and irradiate the part to remove, and to melt | dissolve that part with an etchant.

After dropping the conductive film material solution, exposure to laser light may be performed after room temperature drying or plasticization.

Subsequently, the gate insulating film 18, the semiconductor film 19, and the n-type semiconductor film 20 are sequentially formed by using the plasma CVD method or the sputtering method.

As the gate insulating film 18, a material containing silicon oxide, silicon nitride, or silicon nitride oxide obtained by the plasma CVD method as a main component is used. In addition, the gate insulating film 18 may be discharged by a droplet discharging method using a siloxane polymer, and then fired to form a SiO _x film containing an alkyl group.

The semiconductor film is formed of an amorphous semiconductor film or a semi-amorphous semiconductor film produced by a vapor phase growth method, a sputtering method or a thermal CD method using a semiconductor material gas represented by silane or germane.

As the amorphous semiconductor film, SiH _4, or SiH ₄ may be used with the amorphous silicon film obtained by the plasma CVD method using a gaseous mixture of H _2. In addition, semi-amorphous As the semiconductor film, SiH ₄ to H ₂ to 3-fold to 1000-fold diluted with a mixed gas, Si ₂ H ₆ with the gas flow 20 of GeF ₄ to 40: _{a: (GeF 4 Si 2 H 6} ) 0.9 A semi-amorphous silicon film obtained by a plasma CBD method using a diluted mixed gas, a mixed gas of Si ₂ H ₆ and F ₂ , or a mixed gas of SiH ₄ and F ₂ can be used. In addition, the semi-amorphous semiconductor film is preferable because it can provide crystallinity by the interface between the semi-amorphous semiconductor film and the base.

In addition, by irradiating a laser beam on the semi-amorphous silicon film obtained by the plasma CVD method using a mixed gas of SiH ₄ and F _2, it is also possible to further improve the crystallinity.

The n-type semiconductor film may be formed by a plasma CDD method using a silane gas and a phosphine gas, and may be formed of an amorphous semiconductor film or a semi-amorphous semiconductor film. When the n-type semiconductor film 20 is provided, the contact resistance between the semiconductor film and the electrode (electrode formed at a later step) is lowered, but the n-type semiconductor film 20 may be provided as necessary.

Subsequently, the mask 21 is provided, and the semiconductor film and the n-type semiconductor film are selectively etched to obtain an island-shaped semiconductor film 19 and an n-type semiconductor film 20 (FIG. 1D). The formation method of the mask 21 is formed using the droplet ejection method or the printing method (iron plate, flat plate, intaglio, screen, etc.). The desired mask pattern may be directly formed by the droplet ejection method or the printing method. Alternatively, in order to form high definition, a large resist pattern may be formed by a droplet ejection method or a printing method, and then selectively exposed using a laser beam to form a fine resist pattern.

When the laser beam drawing apparatus shown in FIG. 4 is used, the resist can also be exposed. In that case, the resist mask 21 may be formed by exposing with a laser light using the photosensitive material as a resist.

Subsequently, after the mask 21 is removed, a mask (not shown) is provided and the gate insulating film is selectively etched to form contact holes. In the terminal portion, the gate insulating film is removed. The method of forming the mask may be a resist pattern formed by a general photolithography technique or by a droplet ejection method, or by applying a resist of positive type to the entire surface, followed by exposure and development using a laser beam. All. In the active matrix light emitting device, a plurality of TFTs are arranged in one pixel, and have a connection point between the upper wiring through the gate electrode and the gate insulating film.

Subsequently, a composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.)) is selectively discharged by the droplet discharging method, and then the source wiring or drain is discharged. The wirings 22 and 23 and the lead electrode 17 are formed. Similarly, a power supply line for supplying current to the light emitting element and a connection wiring (not shown) are also formed in the terminal portion (FIG. 1E).

Subsequently, the n-type semiconductor film and the upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 22, 23 as a mask to obtain the state of FIG. 2A. In this step, a channel etched TFT having a channel forming region 24, a source region 26, and a drain region 25 serving as an active layer is completed.

Subsequently, a protective film 27 for blocking the channel formation region 24 from impurity contamination is formed (FIG. 2B). As the protective film 27, a material containing silicon nitride or silicon nitride oxide obtained by the sputtering method or the plasma CDD method as a main component is used. Here, although the example which formed the protective film was shown, it is not necessary to provide a protective film unless it is specifically needed.

Next, the interlayer insulating film 28 is selectively formed by the droplet discharge method. The interlayer insulating film 28 uses resin materials, such as an epoxy resin, an acrylic resin, a phenol resin, a novolak resin, an acrylic resin, a melamine resin, and a urethane resin. In addition, organic materials such as benzocyclobutene, parylene, flare, and permeable polyimide, compound materials produced by polymerization of siloxane-based polymers, and composition materials containing water-soluble homopolymers and water-soluble copolymers are used. To form by the droplet discharging method. The formation method of the interlayer insulation film 28 is not specifically limited to the droplet discharge method. You may form the interlayer insulation film 28 in the whole surface using a coating method, a plasma CDD method, etc.

Subsequently, the protective film is etched using the interlayer insulating film 28 as a mask to form a convex portion (pillar) 29 in which part of the source wiring or the drain wiring 22, 23 is made of a conductive member. The convex part (filler) 29 repeats discharge and baking of the composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), A (aluminum), etc.). You may laminate.

Subsequently, the first electrode 30 in contact with the convex portion (pillar) 29 is formed on the interlayer insulating film 28 (FIG. 2C). Similarly, a terminal electrode 41 in contact with the wiring 40 is also formed. In this case, the driving TFT is an example of an n-channel type, so the first electrode 30 preferably functions as a cathode. When passing light emission, the first electrode 30 is an indium tin oxide (ITO) containing silicon oxide (ITO), silicon oxide (ZnO) containing zinc oxide, tin oxide (tin oxide) by a droplet ejection method or a printing method ( forming a predetermined pattern of a composition including SnO _2), and fired to form the first electrode 30 and the terminal electrode 41. In addition, when the light emission is reflected by the first electrode, the composition mainly contains particles of metals such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum) by the droplet ejection method. The predetermined pattern which consists of these is formed and baked, and the 1st electrode 30 and the terminal electrode 41 are formed. As another method, a transparent conductive film or a light reflective conductive film may be formed by a sputtering method, a mask pattern may be formed by a droplet ejection method, and the first electrode 30 may be formed by combining etching.

An example of the top view of the pixel in the step of FIG. 2C is shown in FIG. In FIG. 3, the cross section along the line A-A 'corresponds to the cross-sectional view on the right side of the pixel portion in FIG. 2C, and the cross section along the line B-B' corresponds to the cross-sectional view on the left side of the pixel portion in FIG. 2C. 3, the same code | symbol is used for the site | part corresponding to FIGS. 1A-2D. 3, the part used as the edge part of the partition 34 formed later is shown with the dotted line.

In addition, since the protective film 27 was provided as an example here, the interlayer insulation film 28 and the convex part (filler) 29 are formed, respectively. When the protective film is not provided, the interlayer insulating film 28 and the convex portion (filler) 29 may be formed in the same apparatus by the droplet discharging method.

Next, a partition wall 34 covering the periphery of the first electrode 30 is formed. The partition walls (also called embankments) 34 are formed using a material containing silicon, an organic material, and a compound material. Alternatively, the partition wall 340 may be formed using a porous membrane, however, if the partition wall 34 is formed using a photosensitive or non-photosensitive material such as acrylic or polyimide, the side surface of the partition wall 34 may have a continuous curvature radius. It is preferable because it becomes a shape which changes, and the thin film of the upper layer of the partition 34 is formed without disconnection.

Through the above steps, a TFT substrate for a light emitting display panel in which a bottom gate type (also called inverse stagger type) TFT and a first electrode are formed on the substrate 10 is completed.

Next, the layer which functions as an electroluminescent layer, ie, the layer 36 containing an organic compound, is formed. The layer 36 containing an organic compound is a laminated structure, and is formed using a vapor deposition method or a coating method, respectively. For example, the electron transport layer (electron injection layer), the light emitting layer, the hole transport layer and the hole injection layer are sequentially stacked on the cathode.

The electron transport layer contains a charge injection transport material. In particular, as the electron-transporting the high charge injection transport substances, for (8-quinolinyl am Sat) g of aluminum tris (abbreviation: Alq _3), tris (5-methyl-8-quinolinyl am Sat) aluminum (abbreviation: Almq ₃ ), Bis (10-hydroxybenzo [h] -quinolinato) beryllium (abbreviated: ＢｅＢｑ ₂ ), bis (2-methyl-8-quinolinolato) -4-phenylphenolato-aluminum (abbreviated: ＢＡｌｑ And metal complexes having a quinoline skeleton or a benzoquinoline skeleton. Moreover, as a material with high hole transportability, it is 4,4'-bis [N- (1-naphthyl) -N-phenyl-amino] -biphenyl (abbreviation: alpha-NPD) and 4,4'-bis, for example. [N- (3-methylphenyl) -N-phenyl-amino] -biphenyl (abbreviated as: TPD) or 4,4 ', 4 "-tris (N, N-diphenyl-amino) -triphenylamine (abbreviated as: Aromatic amines (i.e., benzene ring-nitrogen bonds) such as TDA), 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenyl-amino] -triphenylamine (abbreviated as MTADA) Compound).

Among the charge injection transport materials, examples of particularly high electron injection properties include alkali metal or alkaline earth metal compounds such as lithium fluoride (LiF), cesium fluoride (CSF) and calcium fluoride (CaF ₂ ). In addition, the mixture may be a mixture of a substance having high electron transport such as Al ₃ and an alkaline earth metal such as magnesium (MG).

The light emitting layer is formed of a charge injection transport material and a light emitting material containing an organic compound or an inorganic compound. The light emitting layer has a low-molecular organic compound, a medium-molecular organic compound (an organic compound having no sublimation or solubility (preferably 10 or less in number of molecules), or a chain of molecules having a length of 5 µm or less (preferably from the number of molecules thereof). , 50 nm or less), and one or plural kinds of layers selected from high molecular organic compounds, and may be combined with an electron injection transporting or hole injection transporting inorganic compound.

There are various materials for the light emitting material. As the low molecular weight organic light emitting material, 4-dicyanomethylene-2-methyl-6- (1,1,7,7-tetramethyljurrolidyl-9-enyl) -4H-pyran (abbreviated as: DCCT), 4 -Cycyanomethylene-2-t-butyl-6- (1,1,7,7-tetramethyljurrolidyl-9-enyl) -4H-pyran (abbreviation: DPA), ferrifurantene, 2,5 Dicyano-1,4-bis (10-methoxy-1,1,7,7-tetramethyljurrolidyl-9-enyl) benzene, N, N'-dimethylquinaclidone (abbreviated as DMD), Coumarin 6, coumarin 545T, tris (8-quinolinolato) aluminum (abbreviation: Aｌｑ ₃ ), 9,9'- biantryl, 9,10-diphenylanthracene (abbreviation: DPA) or 9,10- Bis (2-naphthyl) anthracene (abbreviation: DNA) etc. can be used. Other materials may also be used.

The polymer organic light emitting material has a higher physical strength than the low molecular weight organic light emitting material. Therefore, the durability of the light emitting element formed of the polymer type organic light emitting material is high. In addition, since the light emitting device using the polymer-based rainy light emitting material can be formed by coating, the device is relatively easy to manufacture. The structure of the light emitting element using the high molecular organic light emitting material is basically the same as when using the low molecular weight organic light emitting material, that is, the cathode / organic light emitting layer / anode. However, when forming the light emitting layer using a high molecular weight organic light emitting material, it is difficult to form the same laminated structure as when using a low molecular weight organic light emitting material. Therefore, the light emitting device using the polymer organic light emitting material has a two-layer structure. Specifically, it is formed to have a structure called a cathode / light emitting layer / hole transporting layer / anode.

The emission color is determined by the material forming the emission layer. Therefore, the light emitting element which exhibits desired light emission can be formed by selecting the material which forms a foot orphan layer. Examples of the polymer electroluminescent material which can be used for forming the light emitting layer include polyparaphenylene vinylene, polyparaphenylene, polythiophene and polyfluorene materials.

Examples of the polyparaphenylene vinylene-based materials include derivatives of poly (paraphenylene vinylene) [POP], poly (2,5-dialkoxy-1,4-phenylenevinylene) [RO-PJP], and poly (2 -(2'-ethyl-hexoxy) -5-methoxy-1,4-phenylenevinylene) [MEH-PJP], poly (2- (dialkoxyphenyl) -1,4-phenylenevinylene) ROC P-PGA etc. are mentioned. Examples of polyparaphenylenes include derivatives of polyparaphenylene [PPC], poly (2,5-dialkoxy-1,4-phenylene) [R-PPP], poly (2,5-dihexoxy-1, 4-phenylene) etc. are mentioned. The polythiophene system includes derivatives of polythiophene [PT], poly (3-alkylthiophene) [PAT], poly (3-hexylthiophene) [PHH], poly (3-cyclohexylthiophene) [PCHTH ], Poly (3-cyclohexyl-4-methylthiophene) [PCHMT], Poly (3,4-dicyclohexylthiophene) [PDCHTH], Poly [3- (4-octylphenyl) -thiophene] [ POPT, poly [3- (4-octylphenyl) -2,2bithiophene] [PTOPT], and the like. Examples of the polyfluorene system include derivatives of polyfluorene [PF], poly (9,9-dialkylfluorene) [PDA], poly (9,9-dioctylfluorene) [PDOP], and the like.

In addition, when the hole transporting polymer organic light emitting material is formed between the anode and the light emitting polymer organic light emitting material, the hole injection property from the anode can be improved. Generally, the thing which melt | dissolved the polymer type organic light emitting material which has a hole transport property in water with an acceptor material is apply | coated by the spin coat method etc. In addition, since the organic-based organic light emitting material having hole transporting property is insoluble in the organic solvent, the organic light emitting material can be laminated with the aforementioned light emitting organic light emitting material. Examples of the hole-transport polymer-based organic light emitting material include a mixture of POET and camphoric sulfonic acid (CASA) as an acceptor material, a polyaniline [PAANI] and a mixture of polystyrene sulfonic acid [PSS] as an acceptor material.

Furthermore, in addition to the singlet excitation light emitting material described above, the light emitting layer may use a triplet excitation material containing a metal complex or the like. For example, among the red luminescent pixels, the green luminescent pixels, and the blue luminescent pixels, red luminescent pixels having relatively short luminance half-lives are formed of triplet excitation light emitting materials, and others are singlet excitation light emitting materials. To form. Since the triplet excitation light emitting material has good luminous efficiency, it has the feature that the power consumption is reduced compared to the singlet excitation light emitting material to obtain the same luminance. That is, when the triplet excitation light emitting material is applied to the red pixel, the amount of current flowing to the light emitting element is small, so that the reliability can be improved. As low power consumption, the red light emitting pixel and the green light emitting pixel may be formed of the triplet excitation light emitting material, and the blue light emitting pixel may be formed of the singlet excitation light emitting material. Green light emitting devices having high visibility of humans can also be formed of triplet excitation light emitting materials for lower power consumption.

As an example of a triplet excitation light emitting material, the metal complex was used as a dopant, and the metal complex which uses platinum which is a 3rd transition type element as a center metal, the metal complex which makes iridium a center metal, etc. are known. The triplet excitation light emitting material is not limited to these compounds. It is also possible to use the compound which has the said structure and has the element which belongs to group 8-10 of a periodic table in a center metal.

The hole transport layer also includes a charge injection transport material. Examples of the material having high hole-injection properties include metal oxides such as molybdenum oxide (MO) and vanadium oxide (VO), ruthenium oxide (RU), tungsten oxide (MO), and manganese oxide (MO). In addition, In addition, the phthalocyanine: and compounds of the phthalocyanine-based, such as (hereafter, H ₂ Pc) or copper phthalocyanine (CuPC).

Moreover, what is necessary is just to perform the plasma process in oxygen atmosphere, or the heat processing in a vacuum atmosphere before formation of the layer 36 containing an organic compound. In the case of using the vapor deposition method, the organic compound is vaporized in advance by resistance heating, and the organic compound is scattered in the direction of the substrate by opening the shutter at the time of vapor deposition. The vaporized organic compound is scattered upward and deposited on the substrate through an opening provided in the metal mask. In order to achieve full color, the mask may be aligned for each of the emission colors R, G, and B.

The light emitting layer may be configured such that a light emitting layer having a different light emission wavelength band is formed for each pixel to perform full color display. Typically, the light emitting layer corresponding to each color of R (red), G (green), and B (blue) is formed. In this case, by providing the filter (coloring layer) which permeate | transmits the light of the light emission wavelength band in the light emission side of a pixel, improvement of color purity and prevention of mirror surface reflection (reflection) of a pixel part can be aimed at. By providing a filter (colored layer), it becomes possible to omit the circularly-polarizing plate etc. which were previously required, and can lose the light radiate | emitted from a light emitting layer. Moreover, the change of the color tone which occurs when the pixel portion (display screen) is viewed from the oblique direction can be reduced.

Moreover, full color display can be performed by combining a color filter and a color conversion layer, using the material which shows monochromatic light emission as the layer 36 containing an organic compound, without performing patterning. For example, when forming an electroluminescent layer that emits white or orange light, full color display can be performed by separately providing a color filter or a combination of a color conversion layer, a color filter and a color conversion layer on the light emission side of the pixel. have. What is necessary is just to form a color filter and a color conversion layer in a 2nd board | substrate (sealing board | substrate), and to stick to another board | substrate. In addition, as described above, any of a material exhibiting monochromatic light emission, a color filter, and a color conversion layer can be formed by the droplet ejection method.

In order to form a light emitting layer which emits white light, for example, Alq _3, the partially red light emission dye is Nile Red Alq _3, Alq _3, p-EtTA Z, a doped (Nile red), TPD (aromatic diamine) evaporation By stacking sequentially, white can be obtained. In addition, when forming a light emitting layer by the coating method using a spin coat, after apply | coating, it is preferable to bake by vacuum heating. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) solution (PEDOT / PSS) serving as a hole injection layer is coated and baked on the whole surface, and thereafter, a dye (1,1,4) serving as a light emitting layer. , 4-tetraphenyl-1,3-butadiene (TFP), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (DCMM1), nired, coumarin What is necessary is just to apply | coat and bake the polyvinyl carbazole (PV) solution which doped 6 etc.) to the whole surface.

The light emitting layer may be formed as a single layer in addition to the multilayers described above. In this example, the light-emitting layer may be formed by dispersing electron-transporting 1,3,4-oxadiazole derivative (PVD) in a hole-transporting polyvinylcarbazole (PV). Moreover, white light emission is obtained by disperse | distributing 30 kPa% PDP as an electron transport agent and disperse | distributing an appropriate amount of four types of pigment | dye (TFP, coumarin 6, DC1, Nile red).

The substance which forms the layer containing the organic compound mentioned above is an example. A light emitting element can be formed by suitably laminating functional layers such as a hole injection transport layer, a hole transport layer, an electron injection transport layer, an electron transport layer, a light emitting layer, an electron block layer, and a hole block layer. Moreover, you may form the mixed layer or mixed junction which combined each of these layers. The layer structure of the light emitting layer can be changed. Therefore, instead of providing a specific electron injection region or a light emitting region, a modification of providing an electrode for this purpose or dispersing a luminescent material is allowed within the scope of the present invention. It can be.

Of course, monochromatic light emission may be performed. For example, an area color type light emitting display device may be formed using monochromatic light emission. The area color type is suitable for a passive matrix display unit and can mainly display characters and symbols.

Next, the second electrode 37 is formed. The second electrode 37 functioning as an anode of the light emitting element is formed using a transparent conductive film that transmits light, and is prepared by mixing 2-20% zinc oxide with indium oxide, for example, in addition to ITO and ITSO. A transparent conductive film is used. The light emitting element has a structure in which a layer 36 containing an organic compound is sandwiched between a first electrode and a second electrode. In addition, the first electrode and the second electrode need to select a material in consideration of the work function. The first electrode or the second electrode can be both an anode or a cathode by the pixel configuration.

The light emitting element formed of the above materials emits light by biasing in the forward direction. The pixel of the display device formed using the light emitting element can be driven by a simple matrix method or an active matrix method. In any case, each pixel emits light by applying a forward bias at a certain timing. In addition, during a certain period, each pixel is in a non-light emitting state. By applying a reverse bias to this non-luminescence time, the reliability of the light emitting element can be improved. In the light emitting device, there are degradation modes in which the light emission intensity decreases under a constant driving condition, or a degradation mode in which the non-light-emitting region expands in the pixel and the apparent brightness decreases. By performing alternating driving to apply bias in the forward and reverse directions, the progress of deterioration can be delayed and the reliability of the light emitting device can be improved.

In order to reduce the resistance of the second electrode 37, an auxiliary electrode may be formed on the portion of the second electrode which does not serve as a light emitting region.

In addition, a protective layer may be formed to protect the second electrode 37. For example, a protective film made of a silicon nitride film can be formed by using a disk-shaped target made of silicon so that the film formation chamber atmosphere is a nitrogen atmosphere or an atmosphere containing nitrogen and argon. In addition, a thin film (DLC film, CNC film, amorphous carbon film) containing carbon as a main component may be formed as a protective film. Alternatively, a film forming chamber using a CBD method may be provided. The diamond-like carbon film (also called a DLC film) is a plasma CVD method (typically, the RF plasma CVD method, the microwave CDW method, the electron cyclotron resonance (ECR) CD method, the thermal filament CDW method, the combustion flame method, the sputtering method). Method, ion beam vapor deposition, laser vapor deposition, or the like. As the reaction gas used for the film formation, hydrogen gas and a hydrocarbon gas (for example, CH ₄ , C ₂ H ₂ , C ₆ H _6, etc.) are used. These reaction gases are ionized by glow discharge, and are formed by accelerated collision of ions with a cathode subjected to negative self bias. In addition, when a film is formed by using reaction gas CN C ₂ H ₄ gas and N ₂ gas. The DLC film or the CN film is an insulating film that is transparent or semitransparent to visible light. "Transparent to visible light" means that the transmittance of visible light is 80 to 100%. "Translucent to visible light" means that the transmittance of visible light is 50 to 80%. In addition, this protective film does not need to be provided especially if it is not necessary.

Subsequently, the sealing substrate 35 is attached with a sealing material (not shown) to seal the light emitting device. In addition, the transparent filler 38 is filled in the area surrounded by the seal material. The filler 38 is not particularly limited. Any material can be used as long as it has light transmittance. Typically, ultraviolet curing or thermosetting epoxy resins may be used. Here, a high heat-resistant epoxy resin having a refractive index of 1.50, a viscosity of 500 cPas, a Shore D hardness of 90, a tensile strength of 3000 kSil, a Tg point of 150 ° C., a volume resistivity of 1 × 10 ¹⁵ Ωcm and a breakdown voltage of 450 V / m² (manufactured by Electrolite: 2500Clear) Use In addition, by filling the filler 38 between the pair of substrates, the overall transmittance can be improved.

Finally, the FPC 46 is attached to the terminal electrode 41 by a known method using the anisotropic conductive film 45 (FIG. 2D).

Through the above steps, an active matrix light emitting device can be manufactured.

10 is a plan view illustrating an example of an EL display panel configuration. Fig. 10 shows a configuration of a light emitting display panel which controls signals input to scan lines and signal lines by an external drive circuit. On the substrate 700 having an insulating surface, a pixel portion 701 in which the pixels 702 are arranged in a matrix form, a scanning line side input terminal 703, and a signal line side input terminal 704 are formed. The number of pixels can be installed in accordance with various standards, and in the case of BA, it is 1024 × 768 × 3 (RV), and in the case of BA, 1600 × 1200 × 3 (RV) and 1920 × 1080 × 3 (R) You can do

The pixel 702 is provided in a matrix form by intersecting a scan line extending from the scan line side input terminal 703 and a signal line extending from the signal line side input terminal 704. Each of the pixels 702 is provided with a switching element and a pixel electrode connected thereto. A typical example of the switching element is a thin film transistor (TFT). The gate electrode side of the TFT is connected to the scan line, and the source or drain side is connected to the signal line, so that each pixel can be independently controlled by a signal input from the outside.

In addition, when the first electrode is formed of a transparent material and the second electrode is made of a metal material, the structure passes through the substrate 10 to extract light, that is, a bottom emission type. In addition, when the first electrode is formed of a metal material and the second electrode is made of a transparent material, the light is passed through the sealing substrate 35 to extract light, that is, a top emission type. In addition, when the first electrode and the second electrode are formed of a transparent material, it is possible to have a structure for extracting light by passing both the substrate 10 and the sealing substrate 35. The present invention may be any one structure as appropriate.

As described above, in the present embodiment, a fine pattern is realized by exposing and developing the conductive film pattern using the droplet ejection method with a laser beam. In addition, by forming various patterns directly on the substrate using the droplet ejection method, even if a glass substrate of the fifth generation or later in which one side exceeds 1000 mm can be used, the EL display panel can be easily manufactured.

In addition, in this embodiment, the process which does not spin-coat and does not perform the light exposure process using a photomask to the maximum was shown. However, this invention is not specifically limited to this, You may perform some patterning by the light exposure process using a photomask.

Embodiment 2

In Embodiment 1, the example which exposed the gate wiring by the laser beam drawing apparatus was shown. Here, the example of a process using a laser beam drawing apparatus for formation of a source wiring and a drain wiring is shown in FIG.

In addition, since only a part of process differs from Embodiment 1, description of the same process is abbreviate | omitted for simplicity.

First, the semiconductor film patterning process is performed similarly to the first embodiment. Next, the conductive film pattern 220 is formed by the droplet discharging method (FIG. 5A). The conductive film pattern 220 includes a positive photosensitive material.

Next, the electrically conductive film pattern 220 is selectively exposed with a laser beam using the apparatus shown in FIG. 4 (FIG. 5B). At this time, the laser beam irradiated portion 221 causes a chemical reaction.

Subsequently, development and removal of the laser beam irradiated portion 221 are performed to form source wirings or drain wirings 222 and 223 (FIG. 5C).

The interval between the source wirings or the drain wirings 222 and 223 formed in this way is determined by the irradiation of the laser light, so that the operator can freely set them. Since the distance between the source wiring and the drain wiring 222 and 223 determines the length L of the channel formation region, it is useful to set it freely.

Subsequently, the n-type semiconductor film and the upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 222 and 223 as a mask to obtain the state of FIG. 5D. In this step, the channel etched TFT having the channel forming region 224, the source region 226, and the drain region 225 serving as the active layer is completed. Since the subsequent steps are the same as those in the first embodiment, detailed description is omitted.

In the case of forming the source wiring or the drain wiring by using the droplet ejection method, a margin between the source wiring and the drain wiring must be secured to some extent in consideration of a margin such as liquid dropping. Therefore, it was difficult to shorten the length L of the channel formation region. When exposed with a laser beam as shown in this embodiment, it can implement | achieve shortening the length L of a channel formation area | region, for example, 10 micrometers or less.

In addition, this embodiment can be combined with Embodiment 1 freely.

Embodiment 3

Moreover, another process example is shown to FIG. 6A-6D. 6A to 6D show an example in which a flattening film is used as the gate insulating film 260. The other parts are the same as in the second embodiment.

Here, after forming a gate electrode, the gate insulating film 260 with a flat surface is formed by the planarization process performed by the sputtering method, the film | membrane obtained by CBD method, or the coating method. In addition, the planarization process is typically a CPM process or the like.

When forming a light emitting display device having a large screen, it is preferable to form a low resistance gate wiring, and the thickness may be thick, for example, 1 to 5 mu m. In addition, when the wiring film thickness is increased to increase the cross-sectional area, a step is generated between the substrate surface and the thick film wiring surface, resulting in poor coverage. In this case, when the thickness of the gate wiring is thickened, the flat gate insulating film 260 is useful.

Usually, the surface of the board | substrate with which metal wiring was formed becomes a structure in which metal wiring protruded in the convex shape by the thickness. In this embodiment, the gate insulating film 260 is flat, and the surface of the substrate is flat. Therefore, even when the semiconductor film is thinned, coverage defects and the like are less likely to occur.

Next, similarly to the first embodiment, a semiconductor film and an n-type semiconductor film are sequentially formed. Then, a mask is provided, and the semiconductor film and the n-type semiconductor film are selectively etched. Thereby, an island-like semiconductor film and an n-type semiconductor film are obtained.

Next, similarly to the second embodiment, the conductive film pattern 250 is formed by the droplet discharging method (FIG. 6A).

Next, the conductive film pattern 250 is selectively exposed with a laser beam using the apparatus shown in FIG. 4 (FIG. 6B).

Subsequently, development and removal of the laser beam irradiated portion 251 are performed to form source wirings or drain wirings 252 and 253 (FIG. 6C).

Subsequently, the n-type semiconductor film and the upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 252 and 253 as a mask to obtain the state of FIG. 6D. In this step, a channel etched TFT having a channel forming region 254, a source region 256, and a drain region 255 serving as an active layer is completed. Since the subsequent steps are the same as those in the first embodiment, detailed description is omitted.

In addition, this embodiment can be combined freely with Embodiment 1 or Embodiment 2.

Embodiment 4

7A to 7D show examples of processes for forming the source wirings or the drain wirings self-aligned by backside exposure using the gate electrode as a mask.

First, a base insulating film 301 is formed on a substrate. As the base insulating film 301, a base film made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed. In addition, unless necessary, it is not necessary to form the base insulating film in particular.

Subsequently, a conductive film having a film thickness of 100 to 600 nm is formed on the base insulating film 301 by the sputtering method. In addition, the conductive film may be formed by an element selected from Ta, W, Ti, Mo, Al, Cu, or a single layer of an alloy material or compound material containing the element as a main component, or a laminate thereof. Moreover, you may use the semiconductor film represented by the polycrystal silicon film doped with impurity elements, such as phosphorus.

Next, a resist mask is formed using a photomask, and etching is performed using a dry etching method or a wet etching method. By this etching process, the conductive film is etched to obtain a gate electrode 302 as shown in Fig. 7A.

Next, similarly to the first embodiment, the gate insulating film, the semiconductor film, and the n-type semiconductor film are sequentially formed by using the plasma CVD method or the sputtering method. Next, a mask is provided and the semiconductor film and the n-type semiconductor film are selectively etched. Thereby, an island-like semiconductor film and an island-shaped n-type semiconductor film are obtained.

Next, in the same manner as in the second embodiment, the conductive film pattern 320 is formed by the droplet discharging method (Fig. 7A). The conductive film pattern 320 contains a negative photosensitive material.

Subsequently, the back surface of the conductive film pattern 320 is exposed to self-alignment with the laser light using a laser beam drawing apparatus (FIG. 7B). At this time, the portion irradiated with the laser light in the conductive film pattern causes a chemical reaction. In addition, the board | substrate uses a transparent substrate. The laser beam selects one of a wavelength passing through the substrate. Moreover, depending on the wavelength of a laser beam, a laser beam is irradiated to a semiconductor film or an n-type semiconductor film, and laser annealing can be performed.

Subsequently, development is performed to remove portions not irradiated with the laser light to form source wirings or drain wirings 322 and 323 (Fig. 7C).

The interval between the source wirings or the drain wirings 322 and 323 thus formed is determined by the gate electrode width.

Subsequently, the n-type semiconductor film and the upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 322 and 323 as a mask to obtain the state of FIG. 7D. In this step, a channel etched TFT having a channel forming region 324, a source region 326, and a drain region 325 serving as an active layer is completed. Since the subsequent steps are the same as those in the first embodiment, detailed description is omitted.

According to the present invention, since the channel formation regions of the TFTs are formed in a self-aligned manner, no pattern shift occurs and the gap between the respective TFTs can be reduced. Moreover, according to this invention, a manufacturing process can also be made simple.

In addition, this embodiment can be combined freely with Embodiment 1, Embodiment 2, or Embodiment 3. As shown in FIG.

Embodiment 5

In this embodiment, a method of manufacturing an active matrix light emitting display device using a channel stop type TFT as a switching element is shown.

First, as shown in FIG. 8, the base film 811 is formed on the board | substrate 810 similarly to the said 1st Embodiment. As the base film 811, a photocatalytic material TiO ₂ is formed on the entire substrate.

Subsequently, in the desired region and the present embodiment, light having a wavelength for photocatalytic activation of TiO ₂ at both ends of the region forming the wiring is irradiated to form an irradiation region. Laser light may be light having a wavelength for photocatalytic activation. The device of FIG. 4 is used to selectively irradiate light to a desired area. The irradiated area then exhibits oil repellency.

Using the inkjet method, dots in which a conductor is mixed in a solvent are dropped from the non-irradiation region or toward the non-irradiation region to form a conductive film functioning as the gate electrode 815. At the same time, the terminal electrode 840 is formed in the terminal portion.

Subsequently, the gate insulating film 818 is formed by covering the gate electrode. Thereafter, a semiconductor film is formed by a plasma CVD method or the like. In order to form the channel protective film 827, an insulating film is formed by, for example, plasma CVD, and patterned so as to have a desired shape in a desired region. At this time, the channel protective film 827 can be formed by exposing from the back surface of the substrate using the gate electrode as a mask. In addition, the channel protective film may be dripped with polyimide, polyvinyl alcohol, or the like using the inkjet method. As a result, the exposure step can be omitted.

Thereafter, a semiconductor film having one conductivity type, for example, a semiconductor film having n type, is formed by plasma CVD or the like.

Subsequently, a mask made of polyimide is formed on the n-type semiconductor film by the inkjet method. Using the mask, the semiconductor film 824 and the n-type semiconductor films 825 and 826 are patterned. After that, the mask is washed to remove the mask.

Next, the wirings 823 and 822 are formed. The wirings 823 and 822 can be formed by the inkjet method. The wirings 823 and 822 function as so-called source wirings or drain wirings.

Next, an interlayer insulating film 828 is formed. A contact hole reaching the wiring 822 is formed in the interlayer insulating film, and an electrode 830 is formed in the contact hole.

Next, an electrode 829 is formed to be electrically connected to the wiring 822 via the electrode 830. At the same time, electrodes 841 are formed in the terminal portion. The electrodes 829 and 841 can be formed by the inkjet method. The electrode 829 functions as an anode or a cathode of a light emitting element in a light emitting display device. As the electrode 829, a dot in which a conductor is mixed in an aqueous solvent can be used. In particular, a transparent conductive film can be formed by using a transparent conductor.

In this step, the TFT substrate for the light emitting panel in which the channel stop type TFT and the first electrode shown in Fig. 8 is formed is completed. Since the subsequent steps are the same as those in the first embodiment, detailed description is omitted.

In the present embodiment, the wiring or the electrode obtained by the inkjet method is formed by discharging using a conductive film material liquid containing a photosensitive material and then exposing with a laser beam as shown in the first embodiment. It may be. Moreover, a resist mask can also be formed by exposing with a laser beam.

In addition, this embodiment can be combined freely with any one of Embodiments 1-4.

Embodiment 6

In this embodiment, a method of manufacturing an active matrix type light emitting display device using a forward staggered TFT manufactured by the droplet ejection method as a switching element is shown.

First, an underlayer 911 is formed on the substrate 910 to improve adhesion to the material layer by the droplet ejection method formed later.

Next, the source wiring layer 923 and the drain wiring layer 924 are formed on the underlying film 911 by the droplet discharging method.

In addition, the terminal electrode 940 is formed in the terminal portion. As the conductive material for forming these layers, a composition containing, as a main component, metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum) can be used. In particular, since the source and drain wiring layers are preferably made low in resistance, it is preferable to use a material obtained by dissolving or dispersing any one of gold, silver and copper in a solvent in consideration of the specific resistance value. More suitably, low resistance silver and copper may be used. The solvent corresponds to esters such as butyl acetate, alcohols such as isopropyl alcohol, organic solvents such as acetone, and the like. Surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant.

Next, after the n-type semiconductor layer is formed on the entire surface, the n-type semiconductor layer between the source wiring layer 923 and the drain wiring layer 924 is etched and removed.

Next, a semiconductor film is formed on the whole surface. The semiconductor film is formed of an amorphous semiconductor film or a semi-amorphous semiconductor film produced by a vapor phase growth method or a sputtering method using a semiconductor material gas represented by silane or germane.

Next, the mask formed by the droplet discharge method is formed. Thereafter, the semiconductor film and the n-type semiconductor layer are patterned to form the semiconductor layer 927 and the n-type semiconductor layers 925 and 926 shown in FIG. 9. The semiconductor layer 927 is formed to span both the source wiring layer 923 and the drain wiring layer 924. In addition, n-type semiconductor layers 925 and 926 are interposed between the source wiring layer 923, the drain wiring layer 924, and the semiconductor layer 927.

Subsequently, the gate insulating film is formed in a single layer or a laminated structure by using the plasma CVD method or the sputtering method. As an especially preferable aspect, the laminated body of three layers of the insulating layer which consists of silicon nitride, the insulating layer which consists of silicon oxides, and the insulating layer which consists of silicon nitride is comprised as a gate insulating film.

Subsequently, a mask formed by the droplet ejection method is formed, and the gate insulating layer 918 is patterned.

Next, the gate wiring 915 is formed by the droplet discharge method. As the conductive material for forming the gate wiring 915, a composition containing, as a main component, metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum) can be used. . The gate wiring 915 extends to the terminal portion and is formed in contact with the terminal electrode 940 of the corresponding terminal portion.

Next, a flat interlayer insulating film 928 is formed by a coating method. The interlayer insulating film is not limited to the coating method, and an inorganic insulating film such as a silicon oxide film formed by the vapor phase growth method or the sputtering method can also be used. In addition, after forming a silicon nitride film as a protective film by the plasma CDD method or sputtering method, you may laminate | stack a flat insulating film by a coating method.

Next, a contact hole reaching the wiring 924 is formed in the interlayer insulating film. An electrode 930 is formed in the contact hole.

Next, an electrode 929 is electrically connected to the wiring 924 through the electrode 930. At the same time, an electrode 941 is formed in the terminal portion. The electrodes 929 and 941 can be formed by the inkjet method. The electrode 929 functions as an anode or a cathode of the light emitting element in the light emitting display device. As the electrode 929, a dot in which a conductor is mixed in an aqueous solvent can be used. In particular, a transparent conductive film can be formed by using a transparent conductor.

In this step, the TFT substrate for the light emitting panel in which the top gate type (forward staggered type) TFT and the first electrode shown in Fig. 9 is formed is completed. Since the subsequent steps are the same as those in the first embodiment, detailed description is omitted.

In the present embodiment, the wiring or the electrode obtained by the inkjet method is formed by discharging using a conductive film material liquid containing a photosensitive material and then exposing with a laser beam, as shown in the first embodiment. It may be. Moreover, a resist mask can also be formed by exposing with a laser beam.

In addition, this embodiment can be combined freely with any one of Embodiment 1-4.

Embodiment 7

17A to 19D show a manufacturing example of an active matrix liquid crystal display device having a channel etch type TFT as a switching element.

In the same manner as in the first embodiment, a base layer 2011 is formed on the substrate 2010 to improve the adhesion with the material layer by the droplet ejection method formed later.

In addition, the substrate 2010 can withstand the processing temperature of the present manufacturing process, in addition to an alkali-free glass substrate produced by a fusion method or a float method, such as barium borosilicate glass, alumino borosilicate glass, or aluminosilicate glass. The plastic substrate etc. which have heat resistance can be used. In the case of a reflective liquid crystal display device, a semiconductor substrate such as single crystal silicon, a metal substrate such as stainless steel, or a substrate provided with an insulating layer on the surface of a ceramic substrate may be used.

Next, similarly to Embodiment 1, the conductive film material liquid is dripped by the apparatus shown in FIG. 16 using the droplet ejection method, typically the inkjet method, and the conductive film pattern 2012 is formed (FIG. 17A).

Next, similarly to Embodiment 1, a laser beam is selectively irradiated using the apparatus shown in FIG. 4, and a part of conductive film pattern is exposed (FIG. 17B).

Next, development is performed using an etchant (or developer) to remove excess portions. Thereafter, the main baking is performed to form a metal wiring 2015 serving as a gate electrode or a gate wiring (Fig. 17C).

Similarly to the metal wiring 2015, the wiring 2040 that reaches the terminal portion is also formed. Although not shown here, a capacitor electrode or a capacitor wiring for forming a storage capacitor is also formed if necessary.

In the case of using a positive photosensitive material, laser irradiation is performed on a portion to be removed to cause a chemical reaction. What is necessary is just to melt | dissolve the chemically-reacted part with an etchant.

After dropping the conductive film material solution, exposure to laser light may be performed after room temperature drying or plasticization.

Subsequently, the gate insulating film 2018, the semiconductor film, and the n-type semiconductor film are sequentially formed by using the plasma CVD method or the sputtering method.

As the gate insulating film 2018, a material mainly containing silicon oxide, silicon nitride, or silicon nitride oxide obtained by the plasma CDD method is used. Further, the gate insulating film 2018 may be discharged by the droplet discharging method using a siloxane polymer, and then fired to form a silicon oxide film containing an alkyl group.

The semiconductor film is formed of an amorphous semiconductor film or a semi-amorphous semiconductor film produced by a vapor phase growth method, a sputtering method or a thermal CD method using a semiconductor material gas represented by silane or germane.

The n-type semiconductor film may be formed by a plasma CDD method using a silane gas and a phosphine gas, and may be formed from an amorphous semiconductor film or a semi-amorphous semiconductor film. When the n-type semiconductor film 2020 is provided, the contact resistance between the semiconductor film and the electrode (electrode formed in a later step) is lowered, which is preferable, but may be provided as necessary.

Subsequently, a mask 2021 is provided, and the semiconductor film and the n-type semiconductor film are selectively etched to obtain an island-shaped semiconductor film 2019 and an n-type semiconductor film 2020 (Fig. 17D). The mask 2021 is formed using a droplet ejection method or a printing method (iron plate, flat plate, intaglio, screen, etc.).

Subsequently, after removing the mask 2021, a composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.)) is selectively selected by the droplet ejection method. Is discharged to form source wirings or drain wirings 2022 and 2023. Similarly, connection wirings (not shown) are also formed in the terminal portion (FIG. 17E).

Subsequently, the n-type semiconductor film and the upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 2022 and 2023 as a mask to obtain the state of FIG. 18A. In this step, a channel etched TFT having a channel forming region 2024, a source region 2026, and a drain region 2025 serving as an active layer is completed.

Subsequently, a protective film 2027 is formed to prevent the channel formation region 2024 from impurity contamination (Fig. 1B). As the protective film 2027, a material mainly containing silicon nitride or silicon nitride oxide obtained by the sputtering method or the plasma CDD method is used. Although the example which formed the protective film was shown here, if it is not necessary in particular, it is not necessary to install.

Next, the interlayer insulating film 2028 is selectively formed by the droplet discharge method. The interlayer insulating film 2028 uses resin materials such as an epoxy resin, an acrylic resin, a phenol resin, a novolak resin, an acrylic resin, a melamine resin, and a urethane resin. The formation method of the interlayer insulating film 2028 is not specifically limited to the droplet discharge method. In addition, the interlayer insulating film 2028 may be formed on the entire surface by using a coating method, a plasma CD method, or the like.

Subsequently, the protective film is etched using the interlayer insulating film 2028 as a mask to form a convex portion (pillar) 2029 made of a conductive member on a part of the source wiring or the drain wiring 2022, 2023. The convex part (filler) 2029 is repeated by discharging and firing a composition containing a conductive material (Ag (silver), Au (gold), Cu (copper), W (tungsten), Al (aluminum), etc.). You may overlap. After the protective film is etched, the terminal portion is further etched using the interlayer insulating film as a mask to selectively remove the gate insulating film.

Subsequently, a pixel electrode 2030 in contact with the convex portion (pillar) 29 is formed on the interlayer insulating film 2028 (FIG. 1C). Similarly, a terminal electrode 2041 in contact with the wiring 2040 is also formed. When manufacturing a transmissive liquid crystal display panel, indium tin oxide (ITO) containing indium tin oxide (ITO), silicon oxide (ZnO), zinc oxide, and tin oxide (SnO ₂ ) by the droplet ejection method or the printing method. The pixel electrode 2030 and the terminal electrode 2041 may be formed by baking the predetermined pattern which consists of a composition containing etc. and baking.

In the case of manufacturing a reflective liquid crystal display panel, the pixel electrode 2030 and the terminal electrode 2041 are made of Ag, silver, Au, Cu, copper, W (tungsten), It can form using the composition which has the particle | grains of metals, such as aluminum (aluminum) as a main component. As another method, a transparent conductive film or a light reflective conductive film may be formed by a sputtering method, a mask pattern may be formed by a droplet ejection method, and a pixel electrode may be formed by combining etching.

An example of the top view of the pixel in the step of FIG. 1C is shown in FIG. In FIG. 19, the cross section along line A-B corresponds to the cross section of FIG. 1C. In addition, the same code | symbol as in FIG. 18C is used for the corresponding site | part of FIG.

Through the above steps, a TFT substrate for a liquid crystal display panel having a bottom gate type TFT (reverse staggered TFT) and a pixel electrode formed on the substrate 2010 is completed.

Next, the alignment film 2034a is formed to cover the pixel electrode 2030. In addition, the alignment film 2034a may use a droplet ejection method, a screen printing method, or an offset method. Thereafter, a rubbing treatment is performed on the surface of the alignment film 2034a.

The counter substrate 2035 is provided with a color filter composed of a colored layer 2036a, a light shielding layer (black matrix) 2036b, and an overcoat layer 2037, and the counter electrode 2038 made of a transparent electrode again. The alignment film 2034b is formed thereon. A seal material (not shown), which is a closed pattern, is formed so as to surround a region overlapping with the pixel portion by the droplet ejection method. Here, an example of drawing a seal material of a closed pattern in order to drop the liquid crystal 2039 is shown. However, a dip type of injecting a liquid crystal using a capillary phenomenon after installing a seal pattern having an opening and attaching a TFT substrate (fur You can also use (pry up). The color filter can also be formed by the droplet discharging method.

Next, liquid crystal is dripped under reduced pressure so that a bubble may not enter, and both board | substrates are affixed. The liquid crystal is dripped once or several times in the seal pattern of the closed loop. As the alignment mode of the liquid crystal, the TN mode in which the arrangement of the liquid crystal molecules is twisted by 90 ° toward the emission from the incident of light is often used. In the case of manufacturing a liquid crystal display device in the TN mode, the substrate is attached so that the rubbing direction of the substrate is orthogonal to each other.

In addition, a pair of board | substrate space | intervals may be hold | maintained by spraying a spherical spacer, forming the columnar spacer which consists of resin, or including a filler in a sealing material. The columnar spacer is an organic resin material containing at least one of acryl, polyimide, polyimide amide, and epoxy, or any one kind of silicon oxide, silicon nitride, silicon oxynitride, or a laminated film thereof. It is characterized in that the inorganic material made.

Subsequently, separation cutting of the board | substrate which is not necessary is performed. In the case of multiple odors, separate panels are cut off. In the case of one chamfering, the separation cutting step can be omitted by attaching a counter substrate which is cut in advance.

Then, the FPC 2046 is attached using a known technique through the anisotropic conductor layer 2045. The liquid crystal module is completed by the above process (FIG. 1D). If necessary, an optical film is attached. In the case of a transmissive liquid crystal display device, the polarizing plate is attached to both the active matrix substrate and the opposing substrate.

As described above, in the present embodiment, a fine pattern is realized by exposing and developing the conductive film pattern using the droplet ejection method with a laser beam. Moreover, by forming various patterns directly on a board | substrate using the droplet ejection method, manufacture of a liquid crystal display panel can be made easy even if the glass substrate of 5th generation or more whose one side exceeds 1000 mm is used.

In addition, in this embodiment, although the process which does not spin-coat and performs the light exposure process using a photomask to the maximum was shown, it is not specifically limited, You may perform some patterning by the light exposure process using a photomask. .

This embodiment can be combined with the first embodiment.

Embodiment 8

In Embodiment 7, the example which exposed the gate wiring by the laser beam drawing apparatus was shown, Here, the example of a process using a laser beam drawing apparatus in formation of a source wiring or a drain wiring is shown to FIG. 20A-20D.

In addition, since a process is only a part different from Embodiment 7, description of the same process is abbreviate | omitted for simplicity.

First, the semiconductor film patterning process is performed similarly to the seventh embodiment. Next, the conductive film pattern 2120 is formed by the droplet discharging method (FIG. 20A). The conductive film pattern 2120 contains a positive photosensitive material.

Next, it selectively exposes with a laser beam using the apparatus shown in FIG. 4 (FIG. 20b). At this time, the laser beam irradiated portion 2121 causes a chemical reaction.

Next, development is performed to remove the laser beam irradiated portion 2121 to form source wirings or drain wirings 2122 and 2123 (FIG. 20C).

Since the interval between the source wirings or the drain wirings 2122 and 2123 formed in this way is determined by the irradiation of laser light, the operator can freely set them. It is useful to freely set the interval between the source wiring and the drain wiring 2122 and 2123 in order to determine the length L of the channel formation region.

Subsequently, the n-type semiconductor film and the upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 2122 and 2123 as a mask to obtain the state of FIG. In this step, a channel etched TFT having a channel forming region 2124, a source region 2126, and a drain region 2125 serving as an active layer is completed. Since the subsequent steps are the same as in the seventh embodiment, detailed description is omitted.

In the case where the source wiring or the drain wiring is formed using the droplet ejection method, it is difficult to shorten the length L of the channel formation region in consideration of margins such as liquid dropping. When exposed with a laser beam as shown in this embodiment, the length L of a channel formation area can be shortened, for example, 10 micrometers or less can be implement | achieved.

In addition, this embodiment can be combined with Embodiment 1 and Embodiment 7 freely.

Embodiment 9

21A to 21D show another process example. 21A to 21D show an example in which a planarization film is used as the gate insulating film 2160. Other parts are the same as those in the eighth embodiment.

Here, after the gate electrode is formed, the gate insulating film 2160 having a flat surface is formed by a planarization treatment or a coating method performed on the film obtained by the sputtering method, the CD method, or the coating method. In addition, the planarization process is typically a CPM process or the like.

When forming a liquid crystal display device having a large screen, it is preferable to form a low resistance gate wiring, and the thickness may be thick, for example, 1 to 5 m. In addition, when the thickness of the wiring film is increased to increase the cross-sectional area, a step is generated between the substrate surface and the thick film wiring surface, which causes a misalignment of the liquid crystal. In such a case where the thickness of the gate wiring is thickened, the flat gate insulating film 2160 is useful.

Usually, the surface of the substrate on which the metal wiring is formed has a structure in which the metal wiring protrudes in the convex shape by the thickness thereof. In this embodiment, however, since the surface is a flat gate insulating film 2160, the surface of the substrate is flat. Even if it is thinned, it is difficult to produce poor coverage.

Next, similarly to the first embodiment, a semiconductor film and an n-type semiconductor film are sequentially formed. Then, a mask is provided, and the semiconductor film and the n-type semiconductor film are selectively etched to obtain an island-shaped semiconductor film and an n-type semiconductor film.

Next, similarly to the eighth embodiment, the conductive film pattern 2150 is formed by the droplet discharging method (FIG. 21A).

Next, using the apparatus shown in FIG. 4, it selectively exposes with a laser beam (FIG. 21B).

Subsequently, development is performed to remove the laser light irradiated portion 2151 to form source wirings or drain wirings 2152 and 2153 (Fig. 21C).

Subsequently, the n-type semiconductor film and the upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 2152 and 2153 as a mask to obtain the state of FIG. In this step, a channel etched TFT having a channel forming region 2154, a source region 2156, and a drain region 2155 serving as an active layer is completed. Since the subsequent steps are the same as in the seventh embodiment, detailed description is omitted.

In addition, this embodiment can be combined freely with Embodiment 1, Embodiment 7, or Embodiment 8.

Embodiment 10

22A to 22D show a step of forming the source wiring or the drain wiring by self-alignment by backside exposure using the gate electrode as a mask.

First, a base insulating film 2201 is formed on a substrate. As the base insulating film 2201, a base film made of an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed. In addition, unless necessary, it is not necessary to form the base insulating film in particular.

Subsequently, a conductive film having a film thickness of 100 to 600 nm is formed on the base insulating film 2201 by the sputtering method. In addition, the conductive film may be formed by an element selected from Ta, W, Ti, Mo, Al, Cu, a single layer of an alloy material or a compound material containing the above element as a main component, or a laminate thereof. Moreover, you may use the semiconductor film represented by the polycrystal silicon film doped with impurity elements, such as phosphorus.

Next, a resist mask is formed using a photomask, and etching is performed using a dry etching method or a wet etching method. By this etching process, the conductive film is etched to obtain a gate electrode 2202 as shown in Fig. 22A.

Next, similarly to the seventh embodiment, the gate insulating film, the semiconductor film, and the n-type semiconductor film are sequentially formed by using the plasma CVD method or the sputtering method. Subsequently, a mask is provided and the semiconductor film and the n-type semiconductor film are selectively etched to obtain an island-shaped semiconductor film and an n-type semiconductor film.

Next, in the same manner as in the eighth embodiment, the conductive film pattern 2220 is formed by the droplet ejection method (FIG. 22A). In the conductive film pattern 2220, a negative photosensitive material is included.

Subsequently, the back surface is self-aligned with a laser beam using a laser beam drawing apparatus (Fig. 2B). At this time, the portion irradiated with the laser light in the conductive film pattern causes a chemical reaction. In addition, the board | substrate uses a translucent board | substrate, and a laser beam selects the thing of the wavelength which passes through the board | substrate.

Subsequently, development is performed to remove portions not irradiated with laser light to form source wirings or drain wirings 2222 and 2223 (FIG. 2C).

The interval between the source wiring or drain wiring 2222, 2223 formed in this way is determined by the gate electrode width.

Subsequently, an n-type semiconductor film and an upper layer portion of the semiconductor film are etched using the source wiring or the drain wiring 2222 and 2223 as a mask to obtain the state of FIG. 2D. In this step, a channel etched TFT having a channel forming region 2224, a source region 2226, and a drain region 2225 serving as an active layer is completed. Since the subsequent steps are the same as those in the seventh embodiment, detailed description is omitted.

According to the present invention, since the channel formation regions of the TFTs are formed in a self-aligned manner, no pattern difference occurs and the variation in the respective TFTs can be reduced. Moreover, according to this invention, a manufacturing process can also be made simple.

In addition, this embodiment can be combined freely with Embodiment 1, Embodiment 7, Embodiment 8, or Embodiment 9.

Embodiment 11

In this embodiment, the manufacturing method of the active-matrix type liquid crystal display device which uses the channel stop type TFT as a switching element is shown.

First, as shown in FIG. 23, the base film 2311 is formed on the board | substrate 2310 similarly to the said 7th embodiment. As the base film 2311, the photocatalyst material TiO ₂ is formed in its entirety.

Subsequently, in the desired region and the present embodiment, light having a wavelength for photocatalytic activation of TiO ₂ at both ends of the region forming the wiring is irradiated to form an irradiation region. The light having a wavelength for photocatalytic activation may be laser light, and is selectively irradiated to a desired area using the apparatus of FIG. The irradiation area then exhibits oil repellency.

Using the inkjet method, dots in which a conductor is mixed in a solvent are dropped from the non-irradiation region or toward the non-irradiation region to form a conductive film that functions as the gate electrode 2315. At the same time, the terminal electrode 2340 is formed in the terminal portion.

Subsequently, the gate insulating film 2318 is formed over the gate electrode. Thereafter, a semiconductor film is formed by a plasma CVD method or the like. In order to form the channel protective film 2327, an insulating film is formed by, for example, plasma CVD, and patterned so as to have a desired shape in a desired region. At this time, the channel protective film 2327 can be formed by exposing from the back surface of the substrate using the gate electrode as a mask. In addition, the channel protective film may be dripped with polyimide, polyvinyl alcohol, or the like using the inkjet method. As a result, the exposure step can be omitted.

Thereafter, a semiconductor film having one conductivity type, for example, a semiconductor film having n type, is formed by plasma CVD or the like.

Subsequently, a mask made of polyimide is formed on the n-type semiconductor film by the inkjet method. Using the mask, the semiconductor film 2324 and the n-type semiconductor films 2325 and 2326 are patterned. After that, the mask is washed to remove the mask.

Subsequently, wirings 2323 and 2322 are formed. The wirings 2323 and 2322 can be formed by the inkjet method. The wirings 2323 and 2322 function as so-called source wirings or drain wirings.

Next, an interlayer insulating film 2328 is formed. A contact hole reaching the wiring 2232 is formed in the interlayer insulating film, and an electrode 2330 is formed in the contact hole.

Next, an electrode 2329 is formed to be electrically connected to the wiring 2232 through the electrode 2330. At the same time, an electrode 2341 is formed in the terminal portion. The electrodes 2329 and 2341 can be formed by the inkjet method. The electrode 2329 functions as a pixel electrode in the liquid crystal display device. As the electrode 2329, a dot in which a conductor is mixed in an aqueous solvent can be used, and in particular, a transparent conductive film can be formed by using a transparent conductor.

In this step, the TFT substrate for the liquid crystal display panel in which the channel stop type TFT and the pixel electrode shown in Fig. 23 are formed is completed. Since the subsequent steps are the same as those in the seventh embodiment, detailed description is omitted.

In the present embodiment, the wiring or the electrode obtained by the inkjet method is formed by discharging using a conductive film material liquid containing a photosensitive material and then exposing with a laser beam, as shown in the seventh embodiment. It may be. Moreover, a resist mask can also be formed by exposing with a laser beam.

In addition, this embodiment can be combined freely with any one of Embodiment 1, Embodiments 7-11.

Embodiment 12

In this embodiment, Fig. 24 shows a method of manufacturing an active matrix liquid crystal display device using a forward staggered TFT manufactured by the droplet ejection method as a switching element.

First, an underlayer 2411 is formed on the substrate 2410 to improve adhesion to the material layer by the droplet ejection method formed later.

Next, the source wiring layer 2423 and the drain wiring layer 2424 are formed on the underlayer 2411 by the droplet discharging method.

In addition, the terminal electrode 2440 is formed in the terminal portion. As a conductive material which forms these layers, the composition which consists mainly of metal particles, such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and A (aluminum), can be used. In particular, since the source and drain wiring layers are preferably made low in resistance, it is preferable to use a material obtained by dissolving or dispersing any one of gold, silver and copper in a solvent in consideration of the specific resistance value. Low resistance silver and copper may be used. The solvent corresponds to esters such as butyl acetate, alcohols such as isopropyl alcohol, organic solvents such as acetone, and the like. Surface tension and viscosity are appropriately adjusted by adjusting the concentration of the solvent or adding a surfactant.

Next, after the n-type semiconductor layer is formed on the entire surface, the n-type semiconductor layer between the source wiring layer 2423 and the drain wiring layer 2424 is etched and removed.

Next, a semiconductor film is formed on the whole surface. The semiconductor film is formed of an amorphous semiconductor film or a semi-amorphous semiconductor film produced by a vapor phase growth method or a sputtering method using a semiconductor material gas represented by silane or germane.

Subsequently, a mask formed by the droplet ejection method is formed, and the semiconductor film and the n-type semiconductor layer are patterned to form the semiconductor layer 2427 and the n-type semiconductor layers 2425 and 2426 shown in FIG. 24. . The semiconductor layer 2427 is formed to span both the source wiring layer 2423 and the drain wiring layer 2424. In addition, n-type semiconductor layers 2425 and 2426 are interposed between the source wiring layer 2423, the drain wiring layer 2424, and the semiconductor layer 2427.

Subsequently, the gate insulating film is formed in a single layer or a laminated structure by using the plasma CVD method or the sputtering method. As an especially preferable aspect, the laminated body of three layers of the insulating layer which consists of silicon nitride, the insulating layer which consists of silicon oxides, and the insulating layer which consists of silicon nitride is comprised as a gate insulating film.

Subsequently, a mask formed by the droplet discharging method is formed, and the gate insulating layer 2418 is patterned.

Next, the gate wiring 2415 is formed by the droplet discharge method. As the conductive material for forming the gate wiring 2515, a composition containing, as a main component, metal particles such as Ag (silver), Au (gold), Cu (copper), W (tungsten), and Al (aluminum) can be used. . The gate wiring 2415 extends to the terminal portion and is formed in contact with the terminal electrode 2440 of the corresponding terminal portion.

Next, a flat interlayer insulating film 2428 by a coating method is formed. The interlayer insulating film is not limited to the coating method, and an inorganic insulating film such as a silicon oxide film formed by the vapor phase growth method or the sputtering method can also be used. In addition, after forming a silicon nitride film as a protective film by the plasma CDD method or sputtering method, you may laminate | stack a flat insulating film by a coating method.

Next, a contact hole reaching the drain wiring layer 2424 is formed in the interlayer insulating film, and an electrode 2430 is formed in the contact hole.

Subsequently, an electrode 2429 is electrically connected to the drain wiring layer 2424 through the electrode 2430. At the same time, an electrode 2441 is formed in the terminal portion. The electrodes 2429 and 2441 can be formed by the inkjet method. The electrode 2429 functions as a pixel electrode in the liquid crystal display device. As the electrode 2429, a dot in which a conductor is mixed in an aqueous solvent can be used, and in particular, a transparent conductive film can be formed by using a transparent conductor.

In this step, the TFT substrate for the liquid crystal display panel in which the top gate type (forward stagger type) TFT and pixel electrode shown in Fig. 24 is formed is completed. Since the subsequent steps are the same as those in the seventh embodiment, detailed description is omitted.

In the present embodiment, the wiring or the electrode obtained by the inkjet method is formed by discharging using a conductive film material liquid containing a photosensitive material and then exposing with a laser beam, as shown in the seventh embodiment. It may be. Moreover, a resist mask can also be formed by exposing with a laser beam.

In addition, this embodiment can be combined freely with any one of Embodiment 1, Embodiment 7-10.

The present invention having the above configuration will be described in further detail in the following Examples.

Example 1

This embodiment describes an example in which a driver circuit for driving is provided in an EL display panel manufactured by the best mode.

First, a display device employing a COX method will be described with reference to FIG. 11. On the substrate 1600, a pixel portion 1601 for displaying information such as a character and an image, and a driving circuit 1602 on the scanning side are provided. The board | substrate with which the some drive circuit was provided was cut | disconnected in square shape, and the drive circuit (it is hereafter described with driver IC) 1605a, 1605b after the separation cutting is provided on the board | substrate 1600. As shown in FIG. Fig. 11 shows a form in which the tape 1604 is mounted in front of the plurality of driver ICs 1605a and 1605b and the driver ICs 1605a and 1605b, and the dividing size is approximately equal to the length of the side of the signal line side of the pixel portion. The tape may be mounted on the single driver IC in front of the driver IC.

In addition, a TA method may be employed. In that case, what is necessary is just to attach a some tape and to install a driver IC in the said tape. As in the case of the COB system, a single driver IC may be provided on a single tape, and in this case, a metal piece or the like for fixing the driver IC may be attached together due to the problem of strength.

What is necessary is just to provide several driver ICs provided in these EL display panels on the rectangular board | substrate with one side 300 mm-1000 mm or more from a viewpoint of improving productivity.

In other words, a plurality of circuit patterns including one drive circuit unit and one input / output terminal as a unit may be formed on the substrate, and finally divided and extracted. The length of the long side of the driver IC may be formed in a rectangular shape having a long side of 15 to 80 mm and a short side of 1 to 6 mm in consideration of the length of one side of the pixel portion and the pixel pitch, and one side of the pixel region or one side of the pixel portion. And the length of one side of each drive circuit may be formed.

The superiority of the dimensions of the driver IC to the IC chip is in the long side, and when the driver IC formed with the long side of 15 to 80 mm is used, the number required for mounting corresponding to the pixel portion is at least smaller than that in the case of using the IC chip. The manufacturing yield can be improved. Moreover, when a driver IC is formed on a glass substrate, since it is not limited to the shape of the board | substrate used as a mother, there is no damage to productivity. This is a great advantage compared with the case where IC chip is extracted from a circular silicon wafer.

In Fig. 11, driver ICs 1605a and 1605b in which a driving circuit is formed are mounted in an area outside the pixel region 1601. Figs. These driver ICs 1605a and 1605b are drive circuits on the signal line side. In order to form the pixel area corresponding to the RV full color, the number of signal lines in the AA class is required to be 3072, and the 4800 is required in the BA class. The number of signal lines formed in such a number forms a leader line by dividing every few blocks at the end of the pixel region 1601 and is collected in accordance with the pitch of the output terminals of the driver ICs 1605a and 1605b.

The driver IC is preferably formed of a crystalline semiconductor formed on a substrate, and the crystalline semiconductor is preferably formed by irradiating laser light of continuous light emission. Therefore, as the oscillator for generating the laser beam, a solid state laser or a gas laser of continuous light emission is used. When the laser of continuous light emission is used, there are few crystal defects, and it becomes possible to produce a transistor using the polycrystal semiconductor layer of a large particle diameter. In addition, since the mobility and the response speed are good, high-speed driving is possible, so that the operating frequency of the device can be improved compared with the conventional one, and high reliability can be obtained because there is less characteristic variation. Further, for the purpose of further improving the operating frequency, the channel length direction of the transistor and the scanning direction of the laser beam may be matched. This is because, in the laser crystallization process by the continuous light emitting laser, the highest mobility is obtained when the channel length direction of the transistor and the scanning direction of the laser light with respect to the substrate are substantially parallel (preferably -30 ° to 30 °). to be. In addition, the "channel longitudinal direction" coincides with the direction in which current flows in the channel formation region, in other words, the direction in which charge moves. The transistor thus produced has an active layer composed of a polycrystalline semiconductor layer in which grains extend in the channel direction, which means that grain boundaries are formed along the rough channel direction.

In order to perform laser crystallization, it is preferable to greatly compress the laser light, and the width of the beam spot thereof is preferably about 1 to 3 mm of the same width of the short side of the driver IC. Moreover, in order to ensure sufficient and efficient energy density with respect to an irradiated object, it is preferable that the irradiation area of a laser beam is linear form. However, the straight form here does not mean a line in a strict sense, but means a rectangle or an ellipse with a large aspect ratio. For example, an aspect ratio points out two or more (preferably 10-10000). Thus, the manufacturing method of the display apparatus which improved productivity by making the width | variety of the beam spot of a laser beam the same length as the short side of driver IC can be provided.

In Fig. 11, the scan line driver circuit is formed integrally with the pixel portion, and the driver IC is provided as the signal line driver circuit. However, the present invention is not limited to this embodiment, and a driver IC may be mounted as both the scan line driver circuit and the signal line driver circuit. In that case, the specification of the driver IC used on the scanning line side and the signal line side may be different.

In the pixel region 1601, a signal line and a scanning line cross each other to form a matrix, and transistors are disposed corresponding to each intersection. The present invention is characterized in that a TFT disposed in the pixel region 1601 is used as a TFT including an amorphous semiconductor or a semi-amorphous semiconductor as a channel portion. An amorphous semiconductor is formed by a method such as plasma CVD method or sputtering method. The semi-amorphous semiconductor can be formed at a temperature of 300 degrees or less by the plasma CVD method. For example, even in an alkali-free glass substrate having an external dimension of 550 x 650 mm, the film thickness required for forming a transistor is formed in a short time. It has the characteristic to The feature of this manufacturing technique is effective for manufacturing a large display device. In addition, the semi-amorphous TFT can obtain the field effect mobility of 2-10 cm <^2> / Hz * sec by configuring a channel formation area | region with SAR. Therefore, this TFT can be used as an element for constituting a pixel switching element and a driving circuit on the scanning line side. Therefore, the EL display panel which realizes system on panelization can be manufactured.

In FIG. 11, the TFT is formed of the semiconductor layer by using a SAR, and the scan line side driver circuit is also formed on the substrate. In the case of using the TFT formed of the semiconductor layer, the driver IC may be mounted on both the scanning line side driving circuit and the signal line side driving circuit.

In that case, it is suitable to make the specification of the driver IC used on the scanning line side and the signal line side different. For example, the transistor constituting the driver IC on the scanning line side is required to have a breakdown voltage of about 30 V, but the driving frequency is 100 kHz or less, so that relatively high speed operation is not required. Therefore, it is appropriate to set the channel length L of the transistors constituting the driver on the scanning line side sufficiently large. On the other hand, the transistor of the driver IC on the signal line side is sufficient to have a breakdown voltage of about 12V, but the driving frequency is about 3MHz to 65MHz, and high speed operation is required. Therefore, it is suitable to set the channel length and the like of the transistors constituting the driver by the micron rule.

The installation method of the driver IC is not specifically limited, A well-known COB method, a wire bonding method, or the TA method can be used.

The thickness of the driver IC has the same thickness as that of the opposing substrate, and the height between the two becomes almost the same, contributing to ultra-thinness of the entire display device. In addition, since each substrate is made of the same material, thermal stress does not occur even when a temperature change occurs in the display device, and the characteristics of the circuit manufactured by TFT are not damaged. In addition, as shown in the present embodiment, by providing the driver circuit with the driver IC having a length longer than the IC chip, the number of driver ICs installed in one pixel area can be reduced.

As described above, the driving circuit can be assembled to the EL display panel.

In addition, this Example can be combined freely with any one of Embodiments 1-6.

Example 2

In this embodiment, a light emitting device having a thin film transistor is described with reference to FIG.

As shown in Fig. 12A, a top gate type n-channel TFT having a semi-amorphous silicon film as an active layer is provided in the driving circuit portion 1310 and the pixel portion 1311.

Since the manufacturing method of this top gate type TFT was shown in Example 6, detailed description is abbreviate | omitted here.

In this embodiment, an n-channel type TFT that is connected to a light emitting element formed in the pixel portion 1311 is referred to as a driving TFT 1301. An insulating film 1302 called an embankment or a partition wall is formed so as to cover an end portion of an electrode (denoted as a first electrode) of the driving TFT 1301. The insulating film 1302 includes inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist, or benzocyclobutene), silicon ( Si) and oxygen (O) combine to form a skeletal structure and include a material containing at least hydrogen as a substituent or at least one of fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent, a so-called siloxane, and a stacked structure thereof. Can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used.

An opening is formed in the insulating film 1302 on the first electrode. An electroluminescent layer 1303 is provided in the opening, and a second electrode 1304 of the light emitting element is provided so as to cover the electroluminescent layer and the insulating film 1302.

In addition, as the types of molecular excitons formed in the electroluminescent layer, singlet excitation states and triplet excitation states are possible, and since the ground state is usually a singlet state, the light emission from the singlet excitation state is from fluorescence and triplet excitation states. The emission of light is called phosphorescence. Light emission from the electroluminescent layer includes cases in which either excited state contributes. Moreover, you may use combining fluorescence and phosphorescence, and it can select according to the light emission characteristic (emission brightness, lifetime, etc.) of each RV.

The electroluminescent layer 1303 is sequentially stacked on the first electrode side in the order of HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), EIL (electron injection layer) have. In addition, the electroluminescent layer may adopt a single layer structure or a mixed structure in addition to the laminated structure.

As the electroluminescent layer 1303, in the case of full color display, a material showing light emission of red (R), green (G), and blue (B) is selectively selected by a vapor deposition method using an evaporation mask, an inkjet method, or the like. It can be formed.

Specifically, as the HIL as CuPc or PEDOT, BCP and Alq _3, an EIL HTL as α-NPD, ETL BCP: Li or uses CaF _2, respectively. For example, EML may use Agel ₃ doped with a dopant (eg, DC in the case of R, DMD, etc. in the case of G) corresponding to the emission colors of R, G, and B. In addition, an electroluminescent layer is not limited to the material of the said laminated structure. For example, instead of CuPc or POD, oxides such as molybdenum oxide (MO _x : x = 2 to 3) and α-NPD or rubrene may be co-deposited to form hole injection properties. As such a material, an organic material (including a low molecule or a polymer) or a composite material of an organic material and an inorganic material can be used.

In addition, when forming the electroluminescent layer which shows white light emission, full color display can be performed by providing a color filter or a color filter, a color conversion layer, etc. separately. What is necessary is just to provide a color filter and a color conversion layer, for example to a 2nd board | substrate (sealing board | substrate), and to affix mutually. A color filter and a color conversion layer can be formed by the inkjet method. Of course, you may form the electroluminescent layer which shows light emission other than white, and form a monochromatic light emitting device. Further, an area color type display device capable of monochrome display may be provided.

In addition, the first electrode and the second electrode 1304 need to select a material in consideration of the work function. However, both the first electrode and the second electrode can be an anode or a cathode by the pixel configuration. In this embodiment, since the polarity of the driving TFT is an N-channel type, it is preferable to make the first electrode the cathode and the second electrode the anode. In the case where the driving TFT has a polarity of p-channel type, the first electrode may be an anode and the second electrode may be a cathode.

In this embodiment, since the polarity of the driving TFT is an N-channel type, considering the direction of movement of electrons, the first electrode may be a cathode, EL (electron injection layer), ETL (electron transport layer), EML (light emitting layer), or HTL. (Hole transport layer), HIL (hole injection layer), and a 2nd electrode are preferable as an anode.

As a passivation film which covers a 2nd electrode, DLC etc. may be formed in the insulating film by sputtering method or CCD method. As a result, intrusion of moisture or oxygen can be prevented. In addition, the first electrode, the second electrode, and the other electrode can cover the side surface of the display means to prevent the ingress of oxygen or moisture. Next, the sealing substrate is bonded. Nitrogen may be enclosed or a desiccant may be arrange | positioned in the space formed by the sealing substrate. In addition, the space formed by the sealing substrate may be filled with a resin having light transmittance and high water absorption.

Moreover, in order to raise contrast, you may form a polarizing plate or a circularly polarizing plate. For example, a polarizing plate or a circular polarizing plate can be provided on one surface or both surfaces of the display surface.

In the light emitting device having the structure thus formed, in this embodiment, a material (ITO or ITO) having light transmitting property to the first electrode and the second electrode is used. Therefore, light is emitted from the electroluminescent layer in the emission direction 1305 and the emission direction 1306 at the luminance corresponding to the video signal input from the signal line.

12A shows a structural example in which some configuration is different from that in FIG. 12A.

In the structure of the light emitting device shown in FIG. 12B, a channel etch type n-channel TFT is provided in the driving circuit portion 1310 and the pixel portion 1311.

Since the manufacturing method of this channel etch type TFT is shown in Example 1, detailed description is abbreviate | omitted here.

As in FIG. 12A, an n-channel type TFT that is connected to a light emitting element formed in the pixel portion 1311 is referred to as a driving TFT 1301. 12A differs in that the first electrode is a non-transmissive, preferably highly conductive, conductive film, and the second electrode 1304 is a transparent, conductive film. Therefore, the light exit direction 1305 is only on the sealing substrate side.

12C shows another structural example in which some configurations are different from those in FIG. 12A.

In the structure of the light emitting device shown in FIG. 12C, the channel stop type n-channel TFT is provided in the driving circuit portion 1310 and the pixel portion 1311.

Since the manufacturing method of this channel stop type | system | group TFT was shown in Example 5, detailed description is abbreviate | omitted here.

As in FIG. 12A, an n-channel type TFT that is connected to a light emitting element formed in the pixel portion 1311 is referred to as a driving TFT 1301. The structure as illustrated in Fig. 12C differs from Fig. 12A in that the first electrode is a conductive film having a light transmissive property, and the second electrode 1304 is a non-transmissive, preferably highly conductive film. Therefore, the light emission direction 1306 is only the substrate side.

As mentioned above, although the structure of a light emitting device was demonstrated using each thin film transistor, you may combine the structure of a thin film transistor and the structure of a light emitting device.

In addition, this Example can be combined freely with any one of Embodiments 1-6 and Example 1.

Example 3

In this embodiment, the structure of the pixel of the EL display panel will be described with reference to the equivalent circuit diagram shown in FIG.

In the pixel shown in FIG. 13A, signal lines 1410 and power lines 1411 to 1413 are arranged in the column direction, and scanning lines 1414 are arranged in the row direction. A switching TFT 1401, a driving TFT 1403, a current control TFT 1404, a capacitor 1402, and a light emitting element 1405 are provided.

The pixel shown in FIG. 13C differs in that the gate electrode of the TFT 1403 is connected to the power supply line 1412 arranged in the row direction. Other than that, the pixel shown in FIG. 13C has the same configuration as the pixel shown in FIG. 13A. That is, both pixels shown in FIG. 13A and 13C show the same equivalent circuit diagram. However, when the power lines 1412 are arranged in the column direction (FIG. 13A) and when the power lines 1412 are arranged in the row direction (FIG. 13C), each power line is formed of a conductor layer of a different layer. Here, paying attention to the wiring to which the gate electrode of the driving TFT 1403 is connected, it describes separately as FIG. 13A and FIG. 13C to show that the layer which manufactures these is different.

As a characteristic of the pixel shown in FIGS. 13A and 13C, the TFTs 1403 and 1404 are connected in series in the pixel, and the channel length L3 of the TFT 1403, the channel width W3, the channel length L4 of the TFT 1404, and the channel width W4 are as follows. And L3 / W3: L4 / W4 = 5 to 6000: 1. As an example of satisfying 6000: 1, L3 may be 500 micrometers, W3 may be 3 micrometers, L4 may be 3 micrometers, and W4 may be 100 micrometers.

In addition, the TFT 1403 operates in the saturation region to control the current value flowing through the light emitting device 1405, and the TFT 1404 operates in the linear region to control the supply of current to the light emitting device 1405. Both TFTs are preferable in the manufacturing process as long as they have the same conductivity type. In addition to the enhancement type, the TFT 1403 may be a TFT of a deflation type. In the present invention having the above configuration, since the TFT 1404 operates in the linear region, slight fluctuations in the _GS of the TFT 1404 do not affect the current value of the light emitting element 1405. That is, the current value of the light emitting element 1405 is determined by the TFT 1403 operating in the saturation region. The present invention having the above structure can provide a display device in which the image quality is improved by improving the luminance deviation of the light emitting element due to the characteristic variation of the TFT.

In the pixels shown in FIGS. 13A to 13D, the TFT 1401 controls the input of a video signal to a pixel. When the TFT 1401 is turned on and a video signal is input into the pixel, the video signal is input to the capacitor 1402. Is maintained. 13A and 13C show a configuration in which the capacitor 1402 is provided, the present invention is not limited to this, and when the capacitance for holding the video signal can be provided by the gate capacitance or the like, it is specified. It is not necessary to provide the capacitor 1402.

The light emitting element 1405 has a structure in which an electroluminescent layer is sandwiched between two electrodes, and a potential difference is set between the pixel electrode and the counter electrode (between the positive electrode and the negative electrode) so that a voltage in the forward bias direction is applied. The electroluminescent layer is composed of a material which is widely applied such as an organic material or an inorganic material. The luminescence in the electroluminescent layer includes light emission (fluorescence) when returning from the singlet excited state to the ground state, and triplet. Light emission (phosphorescence) when returning from the excited state to the ground state is included.

The pixel shown in FIG. 13B is the same as the pixel configuration shown in FIG. 13A except that the TFT 1406 and the scan line 1415 are added. Similarly, the pixel shown in FIG. 13D is the same as the pixel configuration shown in FIG. 13C except that the TFT 1406 and the scan line 1415 are added.

The TFT 1406 is controlled to be turned on or off by the newly arranged scanning line 1415. When the TFT 1406 is turned on, the electric charge held by the capacitor 1402 discharges, and the TFT 1406 is turned off. That is, by arranging the TFT 1406, it is possible to create a state in which no current flows in the light emitting element 1405 forcibly. Therefore, the configurations in Figs. 13B and 13D can start the lighting period simultaneously with or immediately after the start of the recording period without waiting for the recording of the signals for all the pixels, so that the duty ratio can be improved.

In the pixel shown in FIG. 13E, signal lines 1450, power lines 1451 and 1452, and scanning lines 1453 are arranged in the row direction in the column direction. In addition, the switching TFT 1441, the driving TFT 1443, the capacitor 1442, and the light emitting element 1444 are provided. The pixel shown in FIG. 13F is the same as the pixel configuration shown in FIG. 13E except that the TFT 1445 and the scan line 1454 are added. 13F also enables the duty ratio to be improved by arranging the TFT 1445.

In addition, a present Example can be combined freely with any one of Embodiment 1-6, Example 1, and Example 2.

Example 4

In the present embodiment, the display module will be described. As an example of the display module, a cross-sectional view of the light emitting display module is shown using FIG. 14.

Fig. 14A shows a cross section of a light emitting display module in which an active matrix substrate 1201 and a sealing substrate 1202 are fixed by a seal member 1200, and a pixel portion 1203 is provided between these to display a display area. Forming.

A space 1204 is formed between the sealing substrate 1202 and the pixel portion 1203. The space can be filled with an inert gas, for example nitrogen gas, or a translucent resin having a highly absorbent material can further increase the prevention of ingress of moisture or oxygen. Moreover, you may form resin which has light transmittance and high water absorption. Resin having light transmittance can be formed without reducing the transmittance even when light from the light emitting element is emitted to the second substrate side.

In order to increase the contrast, a polarizing plate or a circular polarizing plate (polarizing plate, 1 / 4λ plate, and 1 / 2λ plate) may be provided at least in the pixel portion of the module. When the display is recognized from the sealing substrate 1202 side, the sealing substrate 1202 may be provided with a 1/4 lambda plate, a 1/2 lambda plate 1205, and a polarizing plate 1206 in this order. An antireflection film may be further formed on the polarizing plate.

In addition, when the display is recognized from both the sealing substrate 1202 and the active matrix substrate 1201, the surfaces of the active matrix substrate 1201 are similarly applied to the 1 / 4λ plate, 1 / 2λ plate 1205, and polarizing plate 1206. Install it.

The wiring board 1210 is connected to the connection terminal 1208 provided in the active matrix substrate 1201 through the FPC 1209. The pixel drive circuit (IC chip, driver IC, etc.) 1211 is provided in the FPC or the connection wiring, and external circuits 1212 such as a control circuit and a power supply circuit are assembled in the wiring board 1210.

As shown in Fig. 14B, a colored layer 1207 can be provided between the pixel portion 1203 and the polarizing plate, or between the pixel portion and the circular polarizing plate. In this case, full-color display can be performed by providing the light emitting element which can emit white light in a pixel part, and separately forming the colored layer which shows R '. In addition, a full color display can be performed by providing a light emitting element capable of emitting blue light in a pixel portion and separately providing a color conversion layer. In addition, a light emitting device for emitting light of each pixel portion, red, green, and blue may be formed, and a colored layer may be used. Such a display module has high color purity of each R 'and enables high-definition display.

In FIG. 14C, unlike the case in FIG. 14A, the active matrix substrate and the light emitting element are sealed using a protective film 1221, such as a film or resin, without using an opposing substrate. A protective film 1221 is provided to cover the second pixel electrode of the pixel portion 1203. As a 2nd protective film, organic materials, such as an epoxy resin, a urethane resin, or a silicone resin, can be used. In addition, you may form a 2nd protective film by dripping a polymer material by the droplet discharge method. In this embodiment, an epoxy resin is discharged and dried using a dispenser. Moreover, you may form an opposing board | substrate on a protective film. The other structure is the same as FIG. 14A.

By encapsulating without using the opposing substrate in this way, the weight, size, and thickness of the display device can be improved.

In the module of this embodiment, the printed circuit board 1210 is mounted using the FPC 1209, but is not necessarily limited to this configuration. The pixel driving circuit 1211 and the external circuit 1212 may be directly provided on the substrate using the CO2 method.

In addition, this Example can be combined freely with any one of Embodiments 1-6 and Examples 1-3.

Example 5

In the present Example, the desiccant of the display panel shown in the said Example is demonstrated using FIG.

15A is a plan view of a display panel. FIG. 15B is a sectional view taken along the line A-B in FIG. 28A, and FIG. 15C is a sectional view taken along the line C-D in FIG. 15A.

As shown in FIG. 15A, the active matrix substrate 1800 and the opposing substrate 1801 are sealed with a sealing material 1802. The pixel region is provided between the first substrate and the second substrate. In the pixel region, in the region where the source wiring 1805 and the gate wiring 1806 intersect, the pixel 1807 is formed. A desiccant 1804 is provided between the pixel region and the seal member 1802. In the pixel region, a desiccant 1814 is provided on the gate wiring or the source wiring. In addition, although the desiccant 1814 is provided on the gate wiring, it can also be provided on the gate wiring and the source wiring.

As the desiccant 1804, it is preferable to use a substance which adsorbs water (H ₂ O) by chemical adsorption such as an oxide of an alkaline earth metal such as calcium oxide (CAO), barium oxide (BAO), or the like. However, the present invention is not limited thereto, and a substance which adsorbs water by physical adsorption such as zeolite or silica gel may be used.

Moreover, a desiccant can be fixed to a board | substrate in the state contained as a granular substance in resin with high moisture permeability. Here, as resin with high moisture permeability, For example, ester acrylate, ether acrylate, ester urethane acrylate, ether urethane acrylate, butadiene urethane acrylate, special urethane acrylate, epoxy acrylate, amino resin acrylate, Acrylic resins, such as acrylic resin acrylate, can be used. In addition, bisphenol A liquid resin, bisphenol A solid resin, bromine containing epoxy resin, bisphenol F resin, bisphenol AD resin, phenol type resin, cresol type resin, novolak resin, cyclic aliphatic epoxy resin, epivis Epoxy resins, such as a type | mold epoxy resin, glycidyl ester resin, glycidyl amine resin, a heterocyclic epoxy resin, and a modified epoxy resin, can be used. In addition, it does not matter even if using a substance other than this. Moreover, you may use inorganic substances, such as a siloxane, for example.

Moreover, as a substance which has water absorption, what solidified the composition which mixed the molecule | numerator which can adsorb | suck water by chemical adsorption in an organic solvent, etc. can be used.

Moreover, as resin or inorganic substance with high moisture permeability as mentioned above, it is preferable to select the substance with high moisture permeability rather than the substance used as said sealing material.

In the light emitting device of the present invention as described above, water mixed into the light emitting device from the outside can be supplied before the water reaches the region where the light emitting element is formed. As a result, the deterioration of the element provided in the pixel resulting from water, typically a light emitting element, can be suppressed.

As shown in FIG. 15B, the desiccant 1804 is disposed between the seal member 1802 and the pixel region 1803 at the periphery of the display panel. In addition, by providing the concave portion in the opposing substrate or the active matrix substrate and providing the desiccant 1804 therein, it becomes possible to make the display panel extremely thin.

As shown in Fig. 15C, in the pixel 1807, a semiconductor region 1811, a gate wiring 1806, a source wiring 1805, and a pixel electrode 1812, which are part of a semiconductor element for driving a display element, are formed. It is. In the pixel portion of the display panel, the desiccant 1814 is provided in a region overlapping with the gate wiring 1806 in the opposing substrate. Compared to the source wiring, the width of the gate wiring is 2 to 4 times, so that the desiccant 1814 is provided on the gate wiring 1806 which is a non-display area, so that the opening ratio is not lowered and moisture invades the display element. And deterioration due to it can be suppressed. Moreover, by providing a recessed part in the opposing board | substrate and providing a desiccant there, it is possible to make a display panel ultra-thin.

In addition, a present Example can be combined freely with any one of Embodiment 1-6, Example 1-4.

Example 6

In this embodiment, an example of using the liquid droplet discharging method for dropping the liquid crystal is shown. In this embodiment, a manufacturing example of obtaining four panels using the large-area substrate 1110 is shown in FIG.

FIG. 25A shows a cross sectional view of the liquid crystal layer formation by a dispenser (or inkjet), and the liquid crystal material 1114 of the droplet ejection apparatus 1116 so as to cover the pixel portion 1111 surrounded by the seal member 1112. It discharges, injects, or drips from the nozzle 1118. The droplet ejection apparatus 1116 is moved in the arrow direction in FIG. 25A. In addition, although the example which moved the nozzle 1118 was shown here, you may form a liquid crystal layer by fixing a nozzle and moving a board | substrate.

25B shows a perspective view. The liquid crystal material 1114 is selectively discharged, sprayed, or dropped to only the region surrounded by the seal member 1112, and the drop 1115 is moved in accordance with the nozzle scanning direction 1113.

25A and 25D are enlarged cross-sectional views of the portion 1119 surrounded by a dotted line in FIG. 25A. When the viscosity of the liquid crystal material is high, it is continuously discharged and adhered as shown in Fig. 25C. On the other hand, when the viscosity of the liquid crystal material is low, it is intermittently discharged and droplets are dropped as shown in FIG. 25D.

In Fig. 25C, 1120 denotes an inverse stagger type TFT obtained in Example 1, and 1121 denotes a pixel electrode, respectively. The pixel portion 1111 comprises a pixel electrode arranged in a matrix, a switching element connected to the pixel electrode, an inverse stagger type TFT, and a storage capacitor (not shown).

Here, the flow of panel manufacture is demonstrated below using FIGS. 26A-26D.

First, a first substrate 1035 having a pixel portion 1034 formed on an insulating surface is prepared. The first substrate 1035 is previously formed with an alignment film, rubbing treatment, spherical spacer spraying, columnar spacer formation, color filter formation, or the like. Subsequently, as shown in FIG. 26A, the sealant 1032 is formed at a predetermined position (pattern surrounding the pixel portion 1034) on the first substrate 1035 by a dispenser device or an inkjet device under an inert gas atmosphere or reduced pressure. . As the translucent seal member 1032, a filler (6 µm to 24 µm in diameter) is included, and a viscosity 40 to 400 Pa.s is used. Moreover, it is preferable to select the sealing material which does not melt | dissolve in the liquid crystal touched later. As a sealing material, acrylic photocuring resin and acrylic thermosetting resin may be used. Moreover, since it is a simple seal pattern, the seal material 1032 can also be formed by the printing method.

Next, the liquid crystal 1033 is dripped by the inkjet method in the area | region enclosed by the sealing material 1032 (FIG. 2B). As the liquid crystal 1033, a known liquid crystal material having a viscosity that can be discharged by the inkjet method may be used. Moreover, since a viscosity can be set by adjusting temperature, a liquid crystal material is suitable for the inkjet method. By the inkjet method, the liquid crystal 1033 can be held in the region surrounded by the seal member 1032 without waste.

Subsequently, the first substrate 1035 provided with the pixel portion 1034 and the second substrate 1031 on which the counter electrode and the alignment film are set are attached in a reduced pressure state so as to prevent bubbles from entering (FIG. 2C). Here, the sealing material 1032 is cured by attaching and irradiating with ultraviolet rays or by heat treatment. Moreover, you may heat-process in addition to ultraviolet irradiation.

2A and 27B show an example of an attachment apparatus capable of irradiating ultraviolet light or performing heat treatment after or after attachment.

In FIGS. 27A and 27B, 1041 is a first substrate support, 1042 is a second substrate support, 1044 is a window, 1048 is a lower measuring plate, and 1049 is a light source. 2A and 27B, the parts corresponding to those in FIG. 26 use the same reference numerals.

The lower measuring plate 1048 has a built-in heating heater to cure the sealing material. Moreover, the window 1044 is provided in the 2nd board | substrate support stand, and the ultraviolet light etc. from the light source 1049 pass. Here, the position alignment of the substrate is performed through the window 1044 not shown. Moreover, the 2nd board | substrate 1031 used as an opposing board | substrate is cut | disconnected previously to a desired size, and is fixed to the support stand 1042 with a vacuum chuck or the like. 27A shows a state before attachment.

At the time of attachment, the first substrate support and the second substrate support are lowered, and then the pressure is applied to attach the first substrate 1035 and the second substrate 1031 and hardened by irradiating ultraviolet light as it is. The state after adhesion is shown in FIG.

Next, the 1st board | substrate 1035 is cut | disconnected using cutting devices, such as a scriber apparatus, a breaker apparatus, and a roll cutter (FIG. 26D). In this way, four panels can be manufactured from one board | substrate. Then, the FPC is attached using a known technique.

As the first substrate 1035 and the second substrate 1031, a glass substrate or a plastic substrate can be used.

The top view of the liquid crystal module obtained by the above process is shown to FIG. 28A, and the example of the top view of another liquid crystal module is shown to FIG.

In Fig. 28A, 2501 is an active matrix substrate, 2506 is an opposing substrate, 2504 is a pixel portion, 2507 is a sealing material, and 2505 is an FPC. Further, the liquid crystal is discharged by the droplet discharging method, and the pair of substrates 2501 and 2506 are attached to the seal member 2507 under reduced pressure.

When a TFT having an active layer made of a semi-amorphous silicon film is used, a part of the driving circuit can also be manufactured, and a liquid crystal module as shown in Fig. 2B can be manufactured.

Fig. 30 shows a block diagram of a scanning line side driving circuit composed of n-channel type TFTs using SAS (semi-morphous silicon) in which a field effect mobility of 5 to 50 cm ² / µs is obtained.

A block indicated by 500 in FIG. 30 corresponds to a pulse output circuit for outputting sampling pulses for one stage, and the shift register is composed of n pulse output circuits. 501 is a buffer circuit, in front of which a pixel 502 is connected.

31 shows a specific configuration of the pulse output circuit 500. The circuit is composed of n-channel type TFTs 601 to 613. As shown in FIG. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAR. For example, if the channel length is 8 占 퐉, the channel width can be set within the range of 10 to 80 占 퐉.

In addition, the specific structure of the buffer circuit 501 is shown in FIG. Similarly, the buffer circuit is composed of n-channel type TFTs 620 to 635. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAR. For example, if the channel length is 10 m, the channel width is set in the range of 10 to 1800 m.

In addition, a drive circuit that cannot be formed of TFTs having an active layer made of a semi-amorphous silicon film is mounted with an IC chip (not shown).

In Fig. 2B, 2511 is an active matrix substrate, 2516 is an opposing substrate, 2512 is a source signal line driver circuit, 2513 is a gate signal line driver circuit, 2514 is a pixel portion, 2517 is a first seal member, and 2515 is an FPC. Further, the liquid crystal is discharged by the droplet discharging method, and the pair of substrates 2511 and 2516 are attached to the first seal member 2517 and the second seal member. Since no liquid crystal is used in the driving circuit portions 2512 and 2513, the liquid crystal is held only in the pixel portion 2514, and the second seal member 2518 is provided to reinforce the entire panel.

Further, when the backlight valve 2604 and the mirror are provided in the obtained liquid crystal module and covered with the cover 2606, an active matrix liquid crystal display device (transmission type) as shown in FIG. In addition, the backlight may be disposed outside the display area to use a light guide plate. In addition, the cover and the liquid crystal module are fixed by using an adhesive or an organic resin. Moreover, since it is a transmission type, the polarizing plate 2603 is attached to both an active matrix board | substrate and an opposing board | substrate. Moreover, you may form another optical film (antireflection film, polarizing film, etc.) and a protective film (not shown).

2600, 2600 is a substrate, 2601 is a pixel electrode, 2602 is a columnar spacer, 2607 is a sealant, 2620 is a color filter in which color layers and light shielding layers are disposed corresponding to each pixel, 2625 is a flattening film, and 2621 is Opposite electrodes, 2622 and 2623 are alignment films, 2624 are liquid crystal layers, and 2619 are protective films.

In addition, this Example can be combined freely with any one of Embodiment 1, Embodiments 7-12.

Example 7

As the liquid crystal display device, the light emitting display device, and the electronic device of the present invention, a video camera, a digital camera, a goggle type display (head mount display), a navigation system, a sound reproducing apparatus (car audio, an audio component system, etc.), a notebook type personal computer A recording medium such as a computer, a game device, a portable information terminal (such as a mobile computer, a mobile phone, a portable game machine or an electronic book), and a recording medium (specifically, a recording medium such as DIG) is reproduced by reproducing the recording medium. And an apparatus provided with a display capable of displaying an image. In particular, it is preferable to use the present invention for a large television having a large screen. Specific examples of those electronic devices are shown in Figs. 33A to 33D.

33A is a large display device having a large screen of 22 inches to 50 inches, and includes a case 1701, a support 1702, a display portion 1703, a video input terminal 1705, and the like. In addition, the display apparatus includes all information display apparatuses such as a personal computer, TV broadcast reception, and interactive TV. According to the present invention, even when a glass substrate of the fifth generation or later in which one side exceeds 1000 mm is used, a relatively inexpensive large display device can be realized.

3B is a notebook personal computer, which includes a main body 1711, a case 1712, a display portion 1713, a keyboard 1714, an external connection port 1715, a pointing mouse 1716, and the like. According to the present invention, a relatively inexpensive notebook personal computer can be realized.

FIG. 33C shows a portable image reproducing apparatus (specifically, a DVD player) having a recording medium, which includes a main body 1721, a case 1722, a display portion A 1723, a display portion B 1724, a recording medium (DVD), and the like. ) Reading unit 1725, operation keys 1726, speaker unit 1727, and the like. The display portion A1723 mainly displays image information, and the display portion B1724 mainly displays character information. In addition, the image reproducing apparatus provided with the recording medium includes a home game machine and the like. According to the present invention, a relatively inexpensive image reproducing apparatus can be realized.

Fig. 3D is a TV that can carry only a display wirelessly. The case 1732 has a built-in battery and a signal receiver, and drives the display portion 1735 and the speaker portion 1735 with the battery. The battery can be repeatedly charged by the charger 1730. In addition, the charger 1730 can transmit and receive video signals, and can transmit the video signals to a signal receiver of a display. The case 1732 is controlled by the operation key 1736. The apparatus shown in Fig. 3D can also be referred to as a video and audio bidirectional communication apparatus, since the device 1732 can send a signal to the charger 1730 by operating the operation key 1736. Also, by operating the operation key 1736, a signal is transmitted from the case 1732 to the charger 1730, and another communication device receives a signal capable of transmitting the charger 1730 again. It can be said to be a general-purpose remote control device. According to the present invention, a relatively large size (22 inches to 50 inches) of portable TVs can be provided in an inexpensive manufacturing process.

As mentioned above, you may use the light emitting device and liquid crystal display device obtained by implementing this invention as a display part of all the electronic devices.

In addition, this Example can be combined freely with any one of Embodiments 1-12 and Examples 1-6.

(Industrial availability)

According to the present invention, in the light emitting device manufacturing process or liquid crystal display process for forming the conductor pattern, the patterning step can be shortened, and the amount of the material used can be reduced. Therefore, a significant cost reduction can be realized regardless of the substrate size.

(Explanation of symbols for the main parts of the drawing)

DESCRIPTION OF REFERENCE NUMERALS 10 substrate 11 base layer 12 conductive film pattern 15 gate electrode 17 extraction electrode 18 gate insulating film 19 semiconductor film 20 semiconductor film 32 mask 22 source wiring or drain wiring 23 source wiring or drain wiring 24 Channel formation region 25 drain region 26 source region 27 protective film 28 interlayer insulating film 29 convex portion (filler)

30: first electrode 34: partition 35: sealing substrate 36: layer containing organic compound

37: 2nd electrode 38: filler 40: wiring 41: terminal electrode 45: anisotropic conductive film 46: FPC 220: conductive film pattern 221: laser beam irradiated part 222: source wiring or drain wiring 223: drain region 226: source region 250 : Conductive film pattern 251: laser beam irradiated portion 252: source wiring or drain wiring 253: source wiring or drain wiring 254: channel formation region 255: drain region 256: source region 260: gate insulating film 301: base insulating film 302: gate electrode 320 : Conductive film pattern 322: source wiring or drain wiring 323: source wiring or drain wiring 324: channel formation region 325: drain region 326: source region 401: laser beam direct drawing apparatus 402: personal computer 403: laser oscillator 404: power source 405 Optical system

406 Acousto-optic modulator 407 Optical system 408 Substrate 409 Substrate 410 D / A converter 411 Driver 412 Driver 500 Pulse output circuit 501 Buffer circuit 502 Pixel 601 n-channel TFT 602 n-channel Type TF 603: n-channel type TF 604: n-channel type TF 608: n-channel type TF 609: n-channel type TF 610: n-channel type TF 611: n-channel type TF 612: n-channel type TF 613,620: n-channel type TF 621: n-channel type TF 622: n-channel type TF 623: n-channel type TF 624: n-channel type TF 625: n-channel type TF 626: n-channel type TF 627: n-channel type TF 628: n-channel type TF 629: n-channel type TF 630: n-channel type TF 631: n-channel type TF 632: n-channel type TF 633: n-channel type TF 634: n-channel type TFT 635: n-channel type TFT 700: substrate 701: pixel portion 702: pixel 703: scanning line side input terminal 704: signal line side Input terminal 810: substrate 811: base film 815: gate electrode 818: gate insulating film 822: wiring 823: wiring 824: semiconductor film 825: wiring 826: n-type semiconductor film 827: channel protective film 828: interlayer insulating film 829: electrode 830: electrode 840: terminal electrode 841: electrode 910: substrate 911: base film 915: gate wiring 918: gate insulating layer 923: source wiring layer 924: source wiring layer 925: n-type semiconductor layer 926: n-type semiconductor layer 927: semiconductor layer 928 Interlayer insulating film 929 electrode 930 electrode 940 terminal electrode 941 electrode 1031 second substrate 1032 sealant 1033 liquid crystal 1034 pixel portion 1035 first substrate 1041 first substrate support 1042 second substrate support 1044 Window 1048: Lower measuring plate 1049: Light source 1110: Large area substrate 1111: Pixel portion 1112: Sealing material

1113 nozzle direction 1114 liquid crystal material 1115 dropping 1116 droplet ejection device 1118 nozzle 1119 enclosed by dotted lines 1120 reverse staggered TFT

Reference Numerals 1121: pixel electrode 1200: sealing material 1201: active matrix substrate 1202: sealing substrate 1203: pixel portion 1204: space 1205: 1/4 lambda plate and 1/2 lambda plate 1206: polarizing plate 1207: colored layer 1208: connection terminal 1209: PCC 1210: Printed circuit board 1211: pixel driving circuit 1212: external circuit 1221: protective film 1301: driving TFT 1302: insulating film 1303: electroluminescent layer 1304: second electrode 1305: emitting direction 1306: both arrow directions 1310: driving circuit portion 1311: pixel portion 1401: Switching TFT 1402: Capacitive element 1403: Driving TFT 1404: Current control TFT 1405: Light emitting element 1406: TFT 1410: Signal line 1411: Power line 1412: Power line 1413: Power line 1414: Scan line 1415: Power line 1441: Switching TFT 1442: Capacitive element 1443: Driving TFT 1444: Light emitting element 1445: TFT 1450: Signal line 1451: Power line 1452: Power line 1453: Scan line 1454: Scan line 1500: Large substrate 1503: Region 1504: Image pickup means 1505a: Head 1505b: Head 1505c: head 1507: Tab 1511: Marker 1600: Substrate 1601: Pixel area 1602: Scanning side driving circuits 1604a, 1604b, 1605a: Driving circuit 1605b: Driving circuit 1701: Case 1702: Support 1703: Display 1705: Video input terminal 1711: Body 1712: Case 1713: display 1714: keyboard 1715: external connection port 1716: pointing mouse 1721: main body 1722: case 1723: display portion A 1724: display portion B 1725: recording medium reading portion 1726: operation key 1727: speaker portion 1730: charger 1732: case 1733 : Display portion 1736: Operation key 1737: Speaker portion 1800: Active matrix substrate 1801: Opposing substrate 1802: Sealing material 1803: Pixel region 1804: Desiccant 1805: Source wiring 1806: Gate wiring 1807: Pixel 1811: Pixel 1812: Pixel electrode 1814: Desiccant 2010: substrate 2011: base layer 2012: conductive film pattern 2015: gate wiring

2018: gate insulating film 2019: semiconductor film 2020: semiconductor film 2021: mask 2022: source wiring or drain wiring 2023: source wiring or drain wiring 2024: channel forming region 2025: drain region 2026: source region 2027: protective film 2028: interlayer insulating film 2029 Convex portion (filler) 2030 Pixel electrode 2034a Alignment film 2034b Alignment film 2035 Opposing substrate 2036a Colored layer 2036b Light shielding layer (black matrix) 2037 Overcoat layer 2038,2039 Liquid crystal 2040 Wiring 2045 Anisotropic conductor layer 2046 : FPC 2120: Conductive film pattern 2121: Laser light irradiated portion 2122: Source wiring or drain wiring 2123: Source wiring or drain wiring 2124: Channel formation region 2125: Drain region 2126: Source region 2150: Conductive film pattern 2151: Laser light irradiation Portion 2152: Source wiring or drain wiring 2153: Source wiring or drain wiring 2154: Channel forming region 2155: Drain region 2156: Source region 2160: Gate insulating film 2201: Ground insulating film 2202: gate electrode 2220: conductive film pattern

2222: source wiring or drain wiring 2223: source wiring or drain wiring 2224: channel forming region 2225: drain region 2226: source region 2310: substrate 2311: base film 2315: gate electrode 2318: gate insulating film 2322: wiring 2323: wiring 2324: Semiconductor film 2325: n-type semiconductor film 2326: n-type semiconductor film 2327: channel protective film 2328: interlayer insulating film 2329: electrode 2330: electrode 2340: terminal electrode 2341: electrode 2410, 2411: base film 2415: gate wiring 2418 Gate insulating layer 2423 source wiring layer 2424 drain wiring layer 2425 n-type semiconductor 2426 n-type semiconductor 2427 semiconductor layer 2428 interlayer insulating film 2429 electrode

2430: electrode 2440: terminal electrode 2441: electrode 2501: substrate 2504: pixel portion 2505: PCC 2506: opposing substrate 2507: seal member 2511: substrate 2512: source signal line driver circuit 2513: gate signal line driver circuit 2514: pixel portion 2515: PCC 2516 : Opposing substrate 2517: Sealing material 2518: Second sealing material 2600: Substrate 2601: Pixel electrode 2602: Spacer 2603: Polarizing plate 2604: Backlight valve 2606: Cover 2607: Sealing material 2620: CFF 2621: Opposing electrode 2622: Alignment film 2623: Alignment film 2624: Liquid crystal Layer 2625: planarization film

Claims (26)

Titanium (TiO _x) oxide, strontium titanate (SrTiO _3), selenide, cadmium (CdSe), tantalate, potassium (KTaO _3), cadmium sulfide (CdS), zirconium oxide (ZrO _2), niobium oxide (Nb ₂ O ₅₎ forming a zinc oxide (ZnO), iron oxide (Fe ₂ O _3), and a base layer consisting of a photocatalytic material selected from the group consisting of tungsten oxide (WO ₃₎ on an insulating surface of a substrate, Discharging a conductive film material containing a photosensitive material on the base layer by a droplet discharging method to form a first conductive film pattern; Selectively exposing the first conductive film pattern to laser light; Developing the exposed first conductive film pattern to form a second conductive film pattern. delete delete delete Titanium (TiO _x) oxide, strontium titanate (SrTiO _3), selenide, cadmium (CdSe), tantalate, potassium (KTaO _3), cadmium sulfide (CdS), zirconium oxide (ZrO _2), niobium oxide (Nb ₂ O ₅₎ forming a zinc oxide (ZnO), iron oxide (Fe ₂ O _3), and a base layer consisting of a photocatalytic material selected from the group consisting of tungsten oxide (WO ₃₎ on an insulating surface of a substrate, Discharging a conductive film material containing a photosensitive material on the base layer by a droplet discharging method to form a first conductive film pattern; Selectively exposing the first conductive film pattern to laser light; Developing the exposed first conductive film pattern to form a second conductive film pattern that is narrower in width than the first conductive film pattern; Forming a gate insulating film covering the second conductive film pattern; And forming a semiconductor film over the gate insulating film. The method according to claim 1 or 5, The conductive film material containing the photosensitive material includes a material selected from the group consisting of Ag, Au, Cu, Ni, Ai, or Pat and a compound thereof. The method according to claim 1 or 5, The photosensitive material is a manufacturing method of a semiconductor device, characterized in that the negative photosensitive material. The method according to claim 1 or 5, The said photosensitive material is a positive photosensitive material, The manufacturing method of the semiconductor device characterized by the above-mentioned. Titanium (TiO _x) oxide, strontium titanate (SrTiO _3), selenide, cadmium (CdSe), tantalate, potassium (KTaO _3), cadmium sulfide (CdS), zirconium oxide (ZrO _2), niobium oxide (Nb ₂ O ₅₎ forming a zinc oxide (ZnO), iron oxide (Fe ₂ O _3), and a base layer consisting of a photocatalytic material selected from the group consisting of tungsten oxide (WO ₃₎ on an insulating surface of a substrate, Discharging a conductive film material containing a photosensitive material on the base layer by a droplet discharging method to form a first conductive film pattern; Selectively exposing the first conductive film pattern to laser light; Developing the exposed first conductive film pattern to form a gate electrode; Forming a gate insulating film covering the gate electrode; Forming a first semiconductor film on the gate insulating film; Discharging a conductive film material including a positive photosensitive material on the first semiconductor film to form a second conductive film pattern; Exposing a selected portion of the second conductive film pattern to laser light; Developing the exposed second conductive film pattern to form a source wiring and a drain wiring; Etching the first semiconductor film using the source wiring and the drain wiring as masks. delete delete The method of claim 9, And the conductive film material containing the positive photosensitive material is discharged by the droplet discharging method. Titanium (TiO _x) oxide, strontium titanate (SrTiO _3), selenide, cadmium (CdSe), tantalate, potassium (KTaO _3), cadmium sulfide (CdS), zirconium oxide (ZrO _2), niobium oxide (Nb ₂ O ₅₎ forming a zinc oxide (ZnO), iron oxide (Fe ₂ O _3), and a base layer consisting of a photocatalytic material selected from the group consisting of tungsten oxide (WO ₃₎ on an insulating surface of a substrate, Discharging a conductive film material containing a photosensitive material on the base layer by a droplet discharging method to form a first conductive film pattern; Selectively exposing the first conductive film pattern to laser light; Developing the exposed first conductive film pattern to form a gate electrode; Forming a gate insulating film covering the gate electrode; Forming a first semiconductor film on the gate insulating film; Discharging a conductive film material including a negative photosensitive material on the first semiconductor film to form a second conductive film pattern; Irradiating a laser beam from the second surface side of the substrate facing the first surface of the substrate using the gate electrode as a mask to expose a portion of the second conductive film pattern to the laser beam; Developing the exposed second conductive film pattern to form a source wiring and a drain wiring; Etching the first semiconductor film using the source wiring and the drain wiring as a mask. The method of claim 13, And said substrate has an insulating surface. The method according to claim 9 or 13, And forming a second semiconductor film including an impurity element imparting n-type or V-type conductivity on the first semiconductor film. The method of claim 15, And etching the second semiconductor film using the source wiring and the drain wiring as a mask. The method of claim 13, And the conductive film material containing the negative photosensitive material is discharged by a droplet discharging method. The method of claim 13, And the source wiring and the drain wiring are formed in a self-aligning manner so as to have an interval equal to the width of the gate electrode. Titanium (TiO _x) oxide, strontium titanate (SrTiO _3), selenide, cadmium (CdSe), tantalate, potassium (KTaO _3), cadmium sulfide (CdS), zirconium oxide (ZrO _2), niobium oxide (Nb ₂ O ₅₎ , zinc (ZnO), iron oxide (Fe ₂ O _3), a base layer to form a photocatalytic material selected from the group consisting of tungsten oxide (WO _3), on an insulating surface of a substrate and oxide, At least one of a gate wiring and a gate electrode formed on the base layer, A gate insulating film formed on at least one of the gate wiring and the gate electrode; A semiconductor layer including a channel formation region on the gate insulating layer; A source wiring or a drain wiring formed on the semiconductor layer, And a channel length of the channel formation region and a gap between the source wiring and the drain wiring have the same width as that of the gate electrode. The method of claim 19, And a pixel electrode formed on the source wiring or the drain wiring. The method of claim 19, The semiconductor layer including the channel formation region is a non-single crystal semiconductor film or a polycrystalline semiconductor film to which hydrogen or halogen hydrogen is added. The method of claim 19, And the source wiring or the drain wiring comprises a photosensitive material. The method of claim 19, The semiconductor device includes a first substrate, a second substrate, and a liquid crystal interposed between a pair of the first substrate and the second substrate. The method of claim 19, The semiconductor device includes a plurality of light emitting elements each having a cathode, a layer containing an organic compound, an anode, and a thin film transistor. The method of claim 19, The semiconductor device is a video and audio bidirectional communication device or a general-purpose remote control device. The method according to any one of claims 1, 5, 9 or 13, And fabricating a transition metal in the photocatalyst material.

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