JP2005328037A - Method for forming film pattern, method for manufacturing semiconductor device, liquid crystal television, and el television - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the method for manufacturing a semiconductor device having a semiconductor element permitting a reduction in cost and an improvement in throughput due to a small number of processes and a reduction in raw materials and having a minute structure. <P>SOLUTION: A first film pattern is formed on a substrate, a second film pattern is formed with curvature on the surface of the first film pattern, and a film pattern is formed by irradiating the first film pattern with light through the second film pattern and a part of the second film pattern. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for forming a film pattern using a droplet discharge method typified by an inkjet method, and a method for manufacturing a semiconductor device.

  2. Description of the Related Art Conventionally, a so-called active matrix driving display panel or a semiconductor integrated circuit including a semiconductor element typified by a thin film transistor (hereinafter also referred to as “TFT”) on a glass substrate has been subjected to a light exposure process using a photomask ( Hereinafter, it is manufactured by patterning various thin films by a photolithography process.

  In the photolithography process, a resist is applied to the entire surface of the substrate and prebaked, and then irradiated with ultraviolet rays or the like through a photomask, and a resist pattern is formed by development. Thereafter, the resist pattern is used as a mask pattern to remove a thin film (film formed of a semiconductor material, an insulator material, or a conductor material) existing in a portion other than a portion to be a film pattern, and pattern the thin film, A film pattern is formed.

  Patent Document 1 discloses a technique for forming a film on a semiconductor wafer using an apparatus capable of continuously discharging a resist from a nozzle in a thin line shape in order to reduce a loss of raw materials required for film formation. .

JP 2000-188251 A

  However, in the film pattern forming process using the conventional photolithography process, most of the material of the film pattern and the resist is wasted, and the number of processes for forming the mask pattern is large, resulting in a decrease in throughput. There is.

  In addition, it is difficult for an exposure apparatus used in the photolithography process to perform exposure processing on a large area substrate at a time. For this reason, in a method for manufacturing a semiconductor device using a large-area substrate, a plurality of exposure times are required, and there is a problem in that yield is reduced due to mismatch between adjacent patterns.

  Further, in order to form a fine semiconductor element having a small occupied area by a droplet discharge method, it is necessary to discharge a solution having a small droplet diameter. For this purpose, it is only necessary to reduce the diameter of the discharge port. In this case, the discharge solution composition adheres to the tip of the discharge port, dries and solidifies, resulting in clogging and the like. Is difficult to continuously and stably discharge, and there is a problem in that the throughput and yield of a semiconductor device formed of the semiconductor element are reduced.

  The present invention has been made in view of such a situation, and an object thereof is to provide a novel film pattern forming method capable of processing a large area substrate with a small number of steps.

  In addition, a method for manufacturing a semiconductor device having a semiconductor element with a fine structure, which can reduce costs and improve throughput by reducing the number of steps and reducing raw materials, and further provide a liquid crystal television and an EL television. With the goal.

  The present invention forms a second film pattern having a curvature and translucency on the surface of the first film pattern that absorbs light, and irradiates the second film pattern with light to form the first film pattern or The gist is to modify a part of the second film pattern to form the third film pattern.

  The present invention also provides a convex lens-shaped optical system for condensing light on the surface of the first film pattern that absorbs light, and irradiates the first film pattern with the light condensed by the optical system. The gist is to form a second film pattern by modifying one film pattern or a part of a convex lens-like optical system.

According to another aspect of the present invention, a first film pattern is formed on a substrate, a second film pattern having translucency and a curvature is formed on the surface of the first film pattern, and the second film The pattern is irradiated with light to collect the light, the collected light is applied to the first film pattern to generate heat, the heat modifies the second film pattern, and the second film pattern The third film pattern is formed by removing a region that is not modified in step, and the fourth film pattern is formed by etching the first film pattern using the third film pattern. Note that the second film pattern is formed of a thermosetting material.

  According to another aspect of the present invention, a first film pattern is formed on a substrate, a second film pattern having translucency and a curvature is formed on the surface of the first film pattern, and the second film Irradiate the pattern to collect the light, irradiate the collected light to the first film pattern to generate heat, modify the second film pattern by heat, and the modified region Is removed to form a third film pattern, and the third film pattern is used to etch the first film pattern to form a fourth film pattern. Note that the second film pattern is formed of a thermoplastic material.

The band gap energy of the first film pattern is preferably higher than the energy per photon of the irradiated light, that is, it is preferable to absorb light. The band gap energy of the second film pattern is preferably lower than the energy per photon of the irradiated light, that is, it is preferable to transmit light.

  The light transmitted through the second film pattern is absorbed by the first film pattern. The light absorbed by the first film pattern is converted into heat in the first film pattern. For this reason, when the second film pattern is formed of a thermoplastic or thermosetting resin, a part of the second film pattern is modified (plasticized or cured) using the heat to form the third film. A pattern is formed, the third film pattern is made to function as a mask pattern, and the first film pattern is etched to form a fourth film pattern.

  By appropriately controlling the size and light intensity of the light spot irradiated to the first film pattern, and the film thickness, absorption coefficient, and thermal conductivity of the first film pattern, light can be emitted in an area of any shape. Can be converted to heat. Typically, when the thermal conductivity of the first film pattern is low, light can be converted into heat in a region narrower than the light spot on the irradiated surface. Further, when the thermal conductivity of the first film pattern is high, light can be converted into heat in a region wider than the light spot. Therefore, a part of the second film pattern having a curved surface formed in contact with the first film pattern can be modified by the heat. That is, it is possible to promote plasticity or curing of the second film pattern. Accordingly, it is possible to form a film pattern having an arbitrary shape without using a photomask, typically a fine film pattern exceeding the diffraction limit of light.

  The surface of the second film pattern has a curvature. For this reason, the light transmitted through the film pattern is condensed by the second film pattern, and becomes light with a small spot diameter. For this reason, it becomes possible to irradiate the first film pattern with light having a smaller spot.

A first film pattern is formed on the substrate, a second film pattern having a light transmitting property and a curvature is formed on the substrate surface, and a third film pattern is formed on the first film pattern. And irradiating the second film pattern with light to collect the light, irradiating the collected light to the first film pattern to generate heat, and the heat causes the first film pattern to generate heat. 3 is modified, a region not modified in the third film pattern is removed to form a fourth film pattern, and the first film pattern is etched using the fourth film pattern. Then, a fifth film pattern may be formed. The third film pattern is formed of a thermosetting material.

Further, a first film pattern is formed on the substrate, a second film pattern having a light transmitting property and a curvature is formed on the substrate surface, and a third film pattern is formed on the first film pattern. And irradiating the second film pattern with light to collect the light, irradiating the collected light to the first film pattern to generate heat, and the heat causes the first film pattern to generate heat. 3 is modified, the modified region in the third film pattern is removed to form a fourth film pattern, and the first film pattern is formed using the fourth film pattern. May be etched to form a fifth film pattern. The third film pattern is formed of a thermoplastic material.

In these cases, the light transmitted through the second film pattern is absorbed by the first film pattern. The light absorbed by the first film pattern is converted into heat in the first film pattern. For this reason, when the third film pattern is formed of a thermoplastic or thermosetting resin, a part of the third film pattern is modified (plasticized or cured) using the heat to form the fourth film. A pattern is formed, the fourth film pattern is made to function as a mask pattern, and the first film pattern is etched to form a fifth film pattern.

According to another aspect of the present invention, a first film pattern is formed on a substrate, a second film pattern is formed on the first film pattern, the second film pattern surface has translucency, and Forming a third film pattern having a curvature, irradiating the third film pattern with light, condensing the light, and irradiating the second film pattern with the condensed light; A part of the film is exposed, the third film pattern is removed, an unexposed region of the second film pattern is removed to form a fourth film pattern, and the first film pattern is formed using the fourth film pattern. Is etched to form a fifth film pattern. Note that the second film pattern is formed of a negative photosensitive material.

  According to another aspect of the present invention, a first film pattern is formed on a substrate, a second film pattern is formed on the first film pattern, the second film pattern surface has translucency, and Forming a third film pattern having a curvature, irradiating the third film pattern with light, condensing the light, and irradiating the second film pattern with the condensed light; A portion of the film is exposed, the third film pattern is removed, the exposed region of the second film pattern is removed to form a fourth film pattern, and the first film is formed using the fourth film pattern. The pattern is etched to form a fifth film pattern. Note that the second film pattern is formed of a positive photosensitive material.

  The second film pattern is preferably made of a photosensitive material and absorbs light, and preferably transmits the third film pattern light. Light transmitted through the third film pattern is absorbed by the second film pattern. Since the second film pattern is a photosensitive material, a part of the second film pattern is modified (cured or plasticized) by the absorbed light to form a fourth film pattern. .

  The surface of the third film pattern has a curvature. For this reason, the light transmitted through the film pattern is condensed by the third film pattern and becomes light with a small spot diameter. For this reason, it becomes possible to irradiate the second film pattern with light having a smaller spot.

  The light used in the present invention is light having any wavelength such as ultraviolet light, visible light, and infrared light. Examples of such light include halogen lamps, metal halide lamps, xenon arc lamps, carbon arc lamps, high pressure sodium lamps, or high pressure mercury lamps, light emitted from incandescent lamps, fluorescent lamps, ultraviolet lamps, infrared lamps, and laser oscillators. The light etc. which are inject | emitted are mentioned.

Representative examples of laser oscillators include excimer laser oscillators such as KrF, ArF, XeCl, and Xe, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, YAG, GdVO ₄ , YVO ₄ , YLF, Examples thereof include a solid-state laser oscillator using a crystal in which Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm is doped into a crystal such as YAlO _3, and a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, and InGaAsP.

  The present invention also provides at least one or more of patterns necessary for manufacturing a semiconductor device such as a conductive layer for forming wirings or electrodes, a semiconductor region, a mask layer for forming a predetermined pattern, or the like. In the semiconductor device formed by a method that can be selectively formed, the width of the gate electrode is from 0.1 μm to 10 μm.

  As a method capable of selectively forming a pattern, a solution of a composition prepared for a specific purpose is formed on a layer that absorbs light by a droplet discharge method (also called an inkjet method depending on the method). To form a first film pattern having a predetermined translucency and a curved surface, and irradiating the light-absorbing layer with light transmitted through the film pattern to generate heat. The second film pattern is formed by heating a part of the first film pattern using the heat.

  As a method capable of selectively forming a pattern, a layer formed of a photosensitive material is formed on a first film pattern, and a solution of a composition prepared for a specific purpose is formed thereon. The second film pattern having a predetermined translucency and having a curved surface is selectively ejected by a droplet ejection method, and the light transmitted through the second film pattern is made of a photosensitive material. The layer to be formed is irradiated and exposed to form a second film pattern.

  In the present invention, examples of the semiconductor device include an integrated circuit including a semiconductor element, a display device, a wireless tag, and an IC tag. Typical examples of the display device include a liquid crystal display device, a light emitting display device, DMD (Digital Micromirror Device), PDP (Plasma Display Panel), FED (Field Emission Display). And display devices such as electrophoretic display devices (electronic paper). Note that the TFT includes a forward staggered TFT and an inverted staggered TFT (channel etch type TFT or channel protection type TFT).

  In the present invention, the display device refers to a device using a display element, that is, an image display device. In addition, a connector, for example, a module in which a flexible printed circuit (FPC), a TAB (Tape Automated Bonding) tape or a TCP (Tape Carrier Package) is attached to the display panel, and a printed circuit board is attached to the end of the TAB tape or TCP. It is assumed that the display device includes all provided modules or modules in which an IC (Integrated Circuit) or a CPU is directly mounted on a display element by a COG (Chip On Glass) method.

  By using a droplet discharge method when forming a film pattern such as a conductive layer for forming a wiring or an electrode of a semiconductor element, a semiconductor region, a mask layer for forming a predetermined pattern as in the present invention The droplets can be ejected to any location by changing the relative position between the droplet ejection port containing the material of the film and the substrate. Further, the thickness and thickness of the pattern to be formed can be adjusted by the relative relationship between the diameter of the discharge port, the discharge amount of the droplets, and the moving speed between the discharge port and the substrate. For this reason, even on a large-area substrate having a side exceeding 1 to 2 m, the film pattern can be accurately discharged to a desired location.

  In addition, light collected by a film pattern having a curvature and translucency is irradiated onto a film pattern that absorbs light, and the light is converted into heat, and a mask pattern is formed by using the heat. Therefore, it is possible to form a film pattern having a desired shape without using a photomask.

  Moreover, since the film pattern which has translucency has a refractive index higher than air, the light which permeate | transmitted this film pattern is condensed. Further, light passes through a film pattern having a curvature, so that the light is collected at the center of the film pattern. For this reason, it is possible to form ultrafine spot-like light exceeding the diffraction limit in air. Further, when laser light is used as light, the light intensity is higher in a region smaller than the light spot. For this reason, it becomes possible to irradiate light locally to the area | region smaller than a light spot. Therefore, it is possible to finely process the film pattern without reducing the spot diameter of light using a complicated optical system, and a semiconductor device having a fine structure can be formed. In addition, since a semiconductor element with a fine structure and an increased W / L can be formed, a semiconductor device with high driving ability can be manufactured at low cost and with high throughput and yield. In addition, by using fine semiconductor elements, a semiconductor device such as a highly integrated circuit or a display device with a high aperture ratio, and a liquid crystal television and an EL television having the semiconductor device can be manufactured at low cost with high throughput and yield. It can be made high.

  The best mode for carrying out the invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention should not be construed as being limited to the description of the embodiment modes. In the drawings, common portions are denoted by the same reference numerals, and detailed description thereof is omitted.

(Embodiment 1)
In the present embodiment, a process of forming a film pattern using heat generated when light is absorbed by the film pattern that absorbs light will be described with reference to FIGS.

  As shown in FIG. 1A, a first film pattern 102 is formed on a substrate 101, and a second film pattern 103 having a curvature is formed on the first film pattern 102. Next, the first film pattern 102 and the second film pattern 103 are irradiated with light 104.

  The second film pattern has a curvature at least around the top, and preferably the entire second film pattern is hemispherical like a convex lens. Moreover, in order to increase the condensing rate of the light irradiated later and form a smaller spot, it is preferable that the curvature of the second film pattern is high. In the first film pattern 102, the region where the second film pattern 103 is formed is irradiated with the light 105 transmitted through the second film pattern.

  As the substrate 101, a glass substrate, a quartz substrate, a substrate formed of an insulating material such as ceramic such as alumina, a plastic substrate having heat resistance that can withstand a processing temperature in a later process, a silicon wafer, a metal plate, or the like can be used. . Further, as the substrate 101, a large area substrate such as 320 mm × 400 mm, 370 mm × 470 mm, 550 mm × 650 mm, 600 mm × 720 mm, 680 mm × 880 mm, 1000 mm × 1200 mm, 1100 mm × 1250 mm, 1150 mm × 1300 mm can be used.

  When a plastic substrate is used as the substrate 101, it is preferable to use a substrate having a relatively high glass transition point such as PC (polycarbonate), PES (polyethylene sulsulfone), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate). . In addition, it is preferable to increase the thickness of the first film pattern to avoid conduction of heat generated by laser light irradiation to the substrate side and to prevent deformation due to heat.

  The first film pattern 102 is formed of a material capable of absorbing light irradiated later. Typically, an insulating material, a conductive material, or a semiconductor material that can absorb ultraviolet light, visible light, or infrared light, or any of these materials is used.

  Light absorption is a phenomenon that occurs when the energy per photon (hν) of light is higher than the band gap energy (Eg) of a substance that absorbs light. Here, assuming that the energy of light is hν and the band gap energy of the first film pattern is Eg1, the material of the first film pattern has a band gap energy (Eg1 <hν) lower than the energy per one photon of light. It is preferable to form with the material which has. Here, in order to irradiate ultraviolet rays, visible rays, or infrared rays, a material having a band gap energy lower than the energy per photon corresponding to the ultraviolet rays is preferable.

  Typical materials for the first film pattern 102 include titanium (Ti), aluminum (Al), tantalum (Ta), tungsten (W), molybdenum (Mo), copper (Cu), chromium (Cr), neodymium. (Nd), iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silver (Ag), gold An element selected from (Au), platinum (Pt), cadmium (Cd), zinc (Zn), silicon (Si), germanium (Ge), zirconium (Zr), barium (Ba), or a main component of the element And a single layer of a nitrogen compound, an oxygen compound, a carbon compound, or a halogen compound. Further, a stack of these can be used. Alternatively, an insulating film in which particles capable of absorbing light are dispersed, typically a silicon oxide film in which silicon microcrystals are dispersed, can be used. Alternatively, an insulating film in which a dye is dissolved or dispersed in an insulator can be used. The first film pattern 102 can be made of a semiconductor material such as amorphous silicon, polysilicon, or silicon containing gallium. In this case, the first film pattern 102 is prevented from peeling off when irradiated with light. Thus, it is preferable to control the energy of light.

  By using a conductive material for the first film pattern 102, a conductive layer such as a wiring or an electrode can be formed later. In addition, by using an insulating material for the first film pattern, an insulating layer such as a protective film, an interlayer insulating film, or a gate insulating film can be formed. Further, by using a semiconductor material for the first film pattern, an active region of the semiconductor element can be formed.

The shape of the first film pattern 102 may be a film shape in addition to the pattern shape. Therefore, a droplet discharge method, a printing method, an electroplating method, a PVD method (Physical Vapor Deposition), or a CVD method (Chemical Vapor Deposition) is used as a method for forming the first film pattern 102. Note that in the case of using a droplet discharge method, it is desirable to evaporate the solvent by discharging under reduced pressure or laser light irradiation. After discharging the droplet, it is desirable to dry and bake the droplet to evaporate the solvent. Here, a method of forming a pattern having a predetermined shape by discharging droplets of the adjusted composition from fine holes is referred to as a droplet discharge method.

  The second film pattern 103 is formed of a light-transmitting material, that is, a material that can transmit light irradiated later. Typically, an insulating material, a conductive material, or a semiconductor material that can transmit ultraviolet light, visible light, or infrared light, or any of these materials is used. In the second film pattern, the higher the refractive index, the easier the light is collected. For this reason, the second film pattern is preferably formed of a material having a high refractive index.

Light transmission is a phenomenon that occurs when the energy per photon (hν) of light is lower than the band gap energy (Eg) of a substance that absorbs light. Here, when the energy per photon of light is hν and the band gap energy of the second film pattern is Eg2, the material of the second film pattern is higher in band gap energy (Eg2) than the energy per photon of light. It is preferably formed of a material having> hν). Here, since ultraviolet rays, visible rays, or infrared rays are irradiated, a material having a higher band gap energy than the energy per photon corresponding to the ultraviolet rays is preferable.

Typical examples of the material of the second film pattern include polyimide, acrylic, vinyl acetate resin, polyvinyl acetal, polystyrene, AS resin, methacrylic resin, polypropylene, polycarbonate, celluloid, cellulose acetate plastic, polyethylene, methylpentene resin, and chloride. A vinyl resin, a polyester resin, and a urea resin are mentioned. Further, SiO having a Si—CH ₃ bond represented by PSG (phosphorus glass), BPSG (phosphorus boron glass), silicate-based SOG (Spin on Glass), polysilazane-based SOG, alkoxysilicate-based SOG, polymethylsiloxane and the like. ₂ can also be used. In the present embodiment, a thermosetting polyimide is used.

  The second film pattern can be formed by drying or baking after discharging by a droplet discharging method. Since the second film pattern has a convex lens shape, it functions as a lens. For this reason, the higher the curvature, the easier it is to collect light. Therefore, a film pattern having a high curvature can be formed by discharging a droplet having a relatively high viscosity by a droplet discharge method. The viscosity of the solution used for the droplet discharge method is preferably 5 to 20 mPa · s, which is to prevent the drying from occurring and to smoothly discharge the solution from the discharge port. The surface tension is preferably 40 mN / m or less. Note that the viscosity of the solution and the like may be appropriately adjusted according to the solvent to be used and the application.

  The step of discharging droplets may be under reduced pressure. This is because the solvent of the solution volatilizes before the solution is discharged and landed on the object to be processed, and the subsequent drying and firing steps can be omitted or shortened. The discharge atmosphere is preferably an oxygen atmosphere, a nitrogen atmosphere, or air.

  Note that a layer having a liquid repellent surface is preferably formed on the first film pattern 102 before forming the second film pattern 103. By the layer having a liquid repellent surface, the material of the second film pattern is repelled on the surface, and a film pattern with a higher curvature can be formed. A film pattern with a high curvature is easy to collect light and is suitable for forming a narrower film pattern.

  Next, the first film pattern 102 and the second film pattern 103 are irradiated with light 104. As light, halogen lamp, metal halide lamp, xenon arc lamp, carbon arc lamp, high pressure sodium lamp, or high pressure mercury lamp, incandescent lamp, fluorescent lamp, ultraviolet lamp, light emitted from infrared lamp, emitted from laser oscillator The light is typically ultraviolet light, visible light, or infrared light, preferably light having a wavelength of 400 to 700 nm.

  Since the band gap energy of the second film pattern is higher than the energy per photon of light, the light 104 is not absorbed and the first film pattern 102 is irradiated with light. Further, since the second film pattern 103 has a convex shape having a curvature, the light 105 transmitted through the region is condensed. For this reason, even if light is irradiated onto the entire surface of the substrate, the region where the second film pattern is formed can be selectively irradiated with light having high intensity.

  Here, the relationship between the refractive index of the second film pattern, the light transmittance, and the intensity reflectance (the reflectance of light having a certain intensity) will be described below.

As shown in FIG. 42, the refractive index of the first medium 2201 is n _i , the refractive index of the second medium 2202 is n _t , and the light 2203 is propagated from the first medium 2201 to the second medium 2202. When the incident angle is represented by θ _i and the refraction angle is represented by θ _t , Equation 1 is established according to Snell's law.

また、ランダム偏光の強度反射率Ｒは、Ｐ波とＳ波の強度反射率の平均値であるため、数式４が成り立つ。

数１より得られた、数式５を数式２〜数式４に代入することにより、強度反射率Ｒは、入射角度θ_t、第１の媒質２２０１の屈折率ｎ_i、及び第２の媒質の屈折率ｎ_tに依存することが分かる。

Further, at this time, from the Stokes theorem, the intensity reflectivity R _p of the P wave is expressed by the following equation (2):
Formula 3 is established for the intensity reflectivity R _s of the S wave.

Further, since the intensity reflectance R of the randomly polarized light is an average value of the intensity reflectances of the P wave and the S wave, Expression 4 is established.

By substituting Equation 5 obtained from Equation 1 into Equations 2 to 4, the intensity reflectance R is determined by the incident angle θ _t , the refractive index n _i of the first medium 2201, and the refraction of the second medium. It can be seen that it depends on the rate n _t .

When light is incident on the second film pattern, the first medium 2201 is air, and the second medium 2202 is the second film pattern. When the wavelength of light is 266 nm, 1 a refractive index n _i, when the 1.5 refractive index n _t, the simulation results of the intensity reflectance of the randomly polarized light, shown in FIG. 43. FIG. 43 shows that the intensity reflectance increases exponentially as the incident angle increases. When the intensity reflectance is lower, light is more likely to pass through the second film pattern. Therefore, when the light incident angle is smaller, light is more likely to pass through the second film pattern. The intensity reflectance depends on the refractive index of the second film pattern and the light absorption rate of the first film pattern, but when the intensity reflectance is 0.4 or less, the incident angle is preferably less than 80 degrees. . When the intensity reflectance is 0.3 or less, the incident angle is preferably less than 77 degrees. Furthermore, when the intensity reflectance is 0.2 or less, the incident angle is preferably less than 72 degrees.

  When a finer light spot is formed, the light collection rate is more important than the light intensity transmittance of the second film pattern. Therefore, it is preferable that the second film pattern has a higher curvature. That is, it is preferable that the contact angle of the second film pattern is large.

  FIG. 8 shows an enlarged view of the region 110 in which the first film pattern 102 and the second film pattern 103 in FIG. 1A are formed. Since the second film pattern 103 has a curvature, the light 105 transmitted through the second film pattern 103 is condensed on a part of the first film pattern 102. That is, light having an incident angle greater than 0 degrees is refracted in the light conduction direction when passing through the second film pattern, and is transmitted to the central portion of the first film pattern 102. For this reason, the light intensity 106 on the surface of the first film pattern (the interface between the first film pattern and the second film pattern) is the highest in the region irradiated with the light condensed by the second film pattern. Get higher.

  The collected light is absorbed by the first film pattern and then converted into heat. In FIG. 8, the surface temperature 107 of the first film pattern is higher in the region where the light intensity 106 is higher. That is, the surface temperature of the first film pattern is higher in the region where the light 104 is collected.

  For this reason, as shown in FIG. 1B, the region 111 irradiated with the condensed light in the first film pattern is heated, and the heat is conducted to the second film pattern, so that the second A part of the film pattern is also heated, and a part 112 of the second film pattern is modified. Typically, the second film pattern 103 is plasticized or cured.

  Next, as shown in FIG. 1C, a region that is not modified in the second film pattern 103 is removed, and a part 112 of the modified second film pattern is exposed. This region is indicated as a third film pattern 112. In the first film pattern, the region where the third film pattern can be formed at a certain temperature or higher is smaller than the spot diameter of light, so the width of the third film pattern is 0.1 μm to 10 μm. is there.

  Next, as shown in FIG. 1D, the fourth film pattern 121 is formed by etching the first film pattern using the third film pattern 112 as a mask. Since the fourth film pattern is etched using the third film pattern as a mask, the width is 0.1 μm to 10 μm.

  Thereafter, as shown in FIG. 1E, the third film pattern 112 may be removed.

  In addition, an insulating film may be formed before the first film pattern 102 is formed on the substrate 101. Since the insulating film is used as an etching stopper when the first film pattern is etched, a metal film, a metal oxide film, typically a film formed of silicon oxide, silicon nitride, titanium oxide, or the like is used.

  Through the above steps, a film pattern having a desired shape can be formed without using a photomask. In addition, since the light is collected using a film pattern having a curvature, a film pattern having a narrow width can be formed without using the light collected using a complicated optical system.

(Embodiment 2)
In this embodiment, an example in which laser light is used as a representative example of the light 104 in Embodiment 1 will be described with reference to FIGS.

  As shown in FIG. 2A, after the second film pattern 103 is formed on the first film pattern 102 as in the first embodiment, the second film pattern 103 is formed using a laser direct drawing apparatus. Is irradiated with a laser beam 204.

  Here, the laser direct drawing apparatus will be described with reference to FIG. As shown in FIG. 39, a laser direct drawing apparatus 1001 includes a personal computer (hereinafter referred to as PC) 1002 that executes various controls when irradiating laser light, a laser oscillator 1003 that outputs laser light, and a laser. A power source 1004 of an oscillator 1003, an optical system (ND filter) 1005 for attenuating laser light, an acousto-optic modulator (AOM) 1006 for modulating the intensity of the laser light, and laser light An optical system 1007 composed of a lens for reducing the cross section, a mirror for changing the optical path, a substrate moving mechanism 1009 having an X stage and a Y stage, and control data output from the PC is converted from digital to analog. D / A converter 1010 and the analog output from the D / A converter A driver 1011 for controlling the acousto-optic modulator 1006 in accordance with the grayed voltage, and a driver 1012 for outputting a driving signal for driving the substrate moving mechanism 1009.

As the laser oscillator 1003, a laser oscillator that can oscillate ultraviolet rays, visible light, or infrared rays can be used. Examples of laser oscillators include excimer laser oscillators such as ArF, KrF, XeCl, and Xe, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, YAG, GdVO ₄ , YVO ₄ , YLF, and YAlO _3. A solid-state laser oscillator using a crystal doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm, and a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, or InGaAsP can be used. In the solid-state laser oscillator, it is preferable to apply the second to fifth harmonics of the fundamental wave.

  Next, an irradiation method using a laser direct drawing apparatus will be described. When the substrate 1008 is mounted on the substrate moving mechanism 1009, the PC 1002 detects the position of the marker attached to the substrate by a camera (not shown). Next, the PC 1002 generates movement data for moving the substrate movement mechanism 1009 based on the detected marker position data and drawing pattern data input in advance. Thereafter, the PC 1002 controls the amount of light output from the acousto-optic modulator 1006 via the driver 1011, so that the laser light output from the laser oscillator 1003 is attenuated by the optical system 1005 and then the acousto-optic modulator. The amount of light is controlled by 1006 so as to obtain a predetermined amount of light. On the other hand, the laser light output from the acousto-optic modulator 1006 is changed in optical path and beam spot shape by the optical system 1007 and condensed by the lens, and then the first film pattern and the second film pattern formed on the substrate. The film pattern is irradiated with the laser light. At this time, the movement of the substrate moving mechanism 1009 in the X direction and the Y direction is controlled according to the movement data generated by the PC 1002. As a result, laser light is irradiated to a predetermined place, and the laser light is converted into heat by the first film pattern.

  Due to the heat converted by the first film pattern, a part of the second film pattern 103 is modified as shown in FIG. Note that the shorter the laser beam, the shorter the beam diameter can be focused. Therefore, it is preferable to irradiate the laser beam with a short wavelength in order to form a film pattern with a fine width.

  Further, the beam spot shape of the laser beam on the surface of the first film pattern may be a dot shape, a circle shape, an ellipse shape, a rectangle shape, a linear shape (strictly, an elongated rectangular shape), or a planar shape (having a wide area). It is processed with an optical system.

  The apparatus shown in FIG. 39 shows an example in which the surface of the substrate is mounted so as to face the substrate transfer mechanism, the back surface of the substrate is the upper surface, and laser light is irradiated from the surface of the substrate movement mechanism. Alternatively, the substrate moving mechanism may be changed as appropriate, and a laser direct drawing apparatus that mounts the back surface of the substrate so as to face the substrate moving mechanism and emits laser light from the back surface side of the substrate moving mechanism may be used.

  Note that here, the laser beam is selectively irradiated by moving the substrate; however, the present invention is not limited to this, and the laser beam can be irradiated by scanning the laser beam in the XY direction. In this case, the optical system 1007 uses a polygon mirror, a galvano mirror, an acousto-optic deflector (AOD), etc. that has good linearity of the beam spot on the irradiation surface and high controllability of the irradiation position. Is preferred. Further, by using the substrate moving mechanism 1009 that can move in the uniaxial direction and the optical system 1007 that can scan in the uniaxial direction, it is possible to irradiate the laser light with higher accuracy.

  The laser beam 204 is condensed by the second film pattern 103. The condensed laser beam 205 is applied to the surface of the first film pattern. Note that the laser beam 204 is preferably thinner than the second film pattern 103. When such a laser beam is applied to the second film pattern 103, the width of the condensed laser beam 205 becomes narrower.

  The intensity of the laser beam is higher at the center of the beam spot, so-called Gaussian distribution. Further, since the light is condensed by the second film pattern 103, the intensity of the laser light is higher than that in the first embodiment. For this reason, the temperature of the surface of the first film pattern is also higher than that of the first embodiment at the center.

  Further, when a wavefront conversion optical element is used in the optical system 1005 of the laser direct drawing apparatus in FIG. 39, the intensity of the laser light becomes trapezoid (top flat type), and the temperature distribution also becomes trapezoidal. For this reason, the laser beam can be condensed and irradiated onto the first film pattern. Typical examples of the wavefront converting optical element include a diffractive optical element, a refractive optical element, a reflective optical element, and an optical waveguide. Representative examples of the diffractive optical element include a holographic optical element and a binary optical element.

  As a result, as shown in FIG. 2B, the laser light is absorbed by the first film pattern 102, and the generated heat is conducted to a part of the second film pattern, so that the second film pattern 103 is obtained. A part of is reformed. For this reason, the size of the beam spot, the curvature of the second film pattern, the intensity of the laser beam, the thickness of the first film pattern, and the absorption can be obtained without condensing the laser beam using a complicated optical system. By appropriately controlling the coefficient and thermal conductivity, it is possible to convert laser light into heat in a region narrower than the beam spot of the laser light on the irradiated surface, and to form a fine film pattern. it can. Furthermore, the beam spot of the laser beam can be made smaller without using a large number of optical systems, and the design of the optical system becomes easy and the cost can be reduced.

  Next, as shown in FIG. 2C, the region that is not modified in the second film pattern is removed, and the modified region 212 is exposed. This region becomes the third film pattern 212.

  Next, as shown in FIG. 2D, the fourth film pattern 221 is formed by etching the first film pattern using the third film pattern 212 as a mask.

  Thereafter, as shown in FIG. 2E, the third film pattern 212 may be removed.

  In addition, an insulating film may be formed before the first film pattern 102 is formed on the substrate 101. Since the insulating film is used as an etching stopper when the first film pattern is etched, a metal film, a metal oxide film, typically a film formed of silicon oxide, silicon nitride oxide, or the like is used.

  Through the above steps, a film pattern having a desired shape can be formed without using a photomask. Further, a film pattern having a narrower width than the light beam spot can be formed. Furthermore, a narrow film pattern can be formed without condensing laser light using a complicated optical system.

(Embodiment 3)
In the present embodiment, a process of forming a film pattern by forming a second film pattern on the substrate surface and irradiating the first film pattern with light transmitted through the second film pattern and the substrate is shown in FIG. Will be described.

  As shown in FIG. 3A, a first film pattern 102 is formed over a substrate 101. Next, a second film pattern 303 is formed on the opposite side of the first film pattern 102 through the substrate 101. The second film pattern is formed using the same material as the second film pattern 103 of the first embodiment.

  Before forming the second film pattern 303, a layer having a liquid repellent surface is formed on the surface of the substrate, whereby the material of the second film pattern is repelled on the surface and a film pattern having a high curvature is formed. be able to. A film pattern having a high curvature easily collects light and is suitable for forming a film pattern having a narrow width.

Next, a third film pattern 301 is formed on the surface of the first film pattern 102. As the third film pattern, a thermoplastic material or a thermosetting material is used. Typical examples of thermoplastic materials and thermoplastic materials include polyimide, acrylic, novolac resin, melamine resin, phenol resin, epoxy resin, silicon resin, furan resin, diallyl phthalate resin, vinyl chloride resin, vinyl acetate resin, polyvinyl alcohol, Examples include a solution containing polystyrene, methacrylic resin, polyethylene resin, polypropylene, polyamide, polycarbonate, polyester, polyamide (nylon) and the like. Further, SiO having a Si—CH ₃ bond represented by PSG (phosphorus glass), BPSG (phosphorus boron glass), silicate-based SOG (Spin on Glass), polysilazane-based SOG, alkoxysilicate-based SOG, polymethylsiloxane and the like. ₂ can also be used.

  Although the third film pattern 301 is formed after the second film pattern 303 is formed here, the present invention is not limited to this, and the second film pattern 303 is formed after the third film pattern 301 is formed. Also good.

  Next, the light 104 is irradiated from the substrate 101 and the second film pattern 303 side to the first film pattern. In other words, the first film pattern 102 is irradiated with light transmitted through the substrate 101 and the second film pattern 303. The light 104 is collected by the second film pattern having a curvature, and then passes through the substrate and is irradiated on the first film pattern. For this reason, since the distance at which light is collected is longer than in the first and second embodiments, the first film pattern 102 can be irradiated with light having a narrow spot area.

  Note that laser light may be used as the light 104 as in the second embodiment.

  As shown in FIG. 3B, the region irradiated with light on the first film pattern is heated, and the heat of the heated region 111 is conducted to the third film pattern 301 to partially The fourth film pattern 312 can be formed by modifying the third film pattern due to plasticity or curing.

  Next, as shown in FIG. 3C, the region not modified by the third film pattern 301 is removed, and the fourth film pattern 312 is exposed.

  Next, as illustrated in FIG. 3D, the fifth film pattern 321 is formed by etching the first film pattern using the fourth film pattern 312. The fifth film pattern 321 has a desired shape and a width of 0.1 μm to 10 μm. Thereafter, the fourth film pattern is removed.

  Note that the second film pattern may be removed as shown in FIG.

  In addition, an insulating film may be formed before the first film pattern 102 is formed on the substrate 101. Since the insulating film is used as an etching stopper when the first film pattern is etched, a metal film, a metal oxide film, typically a film formed of silicon oxide, silicon nitride oxide, or the like is used.

  Through the above steps, a film pattern having a desired shape can be formed without using a photomask. In addition, since the light is collected using a film pattern having a curvature, a fine film pattern can be formed without using the light collected using a complicated optical system. Further, the condensed light is further condensed by passing through the substrate, and becomes light with a small spot diameter. Since the first film pattern is irradiated with the light, a finer film pattern can be formed.

(Embodiment 4)
In this embodiment, an example of forming a film pattern by exposing a photosensitive material using a film pattern having a curvature and translucency will be described with reference to FIG.

  The first film pattern 102 is formed on the substrate 101, and the second film pattern 401 is formed thereon. The second film pattern 401 is formed using a positive or negative photosensitive material such as acrylic, polyimide, styrene, vinyl chloride, diazo resin, azide compound, novolak resin, or poly (vinyl cinnamate). A sensitizer may be added to the photosensitive material. Next, a third film pattern 403 having translucency and a curvature is formed on the second film pattern 401. The third film pattern is formed using the same material and manufacturing method as those of the second film pattern 103 of the first embodiment.

  By forming a layer having a liquid repellent surface on the second film pattern 401 before forming the third film pattern 403, the material of the third film pattern is repelled on the surface, and the curvature is high. A film pattern can be formed. A film pattern having a high curvature easily collects light and is suitable for forming a film pattern having a narrow width.

  Next, when the light 404 is irradiated, the light 405 condensed by the third film pattern 403 is irradiated to the second film pattern 401. Since the second film pattern 401 is formed of a photosensitive material, a region 411 irradiated with light is exposed as shown in FIG. In the present embodiment, since the negative photosensitive resin is used for the second film pattern 401, the region 411 exposed by light irradiation is cured. In the case where a positive photosensitive resin is used for the second film pattern 401, the exposed region 411 is plasticized by light irradiation.

  Next, as shown in FIG. 4C, after the third film pattern 403 is removed, the second film pattern is developed to remove the unexposed areas. As a result, the exposed region 411 is exposed. The exposed region 411 becomes the fourth film pattern 411.

  Next, as shown in FIG. 4D, the first film pattern 102 is etched using the fourth film pattern 411 as a mask to form a fifth film pattern 421.

  Thereafter, as shown in FIG. 4E, the fourth film pattern 411 is removed.

  In addition, an insulating film may be formed before the first film pattern 102 is formed on the substrate 101. Since the insulating film is used as an etching stopper when the first film pattern is etched, a metal film, a metal oxide film, typically a film formed of silicon oxide, silicon nitride oxide, or the like is used.

  Through the above steps, a photosensitive material is exposed to form a mask pattern without using a photomask, and a film pattern having a desired shape can be formed using the mask pattern. In addition, a film pattern having a narrower width than the light spot can be formed. Furthermore, a narrow film pattern can be formed without condensing laser light using a complicated optical system.

(Embodiment 5)
In this embodiment mode, a manufacturing process of a TFT having a narrow gate electrode will be described with reference to FIGS. In this embodiment, a channel etch type TFT is used as the TFT. Note that the gate electrode is formed using the fourth film pattern formed in Embodiment 1, but the present invention is not limited to this, and any of Embodiments 2 to 4 can be used as appropriate.

  As shown in FIG. 5A, a first insulating film 500 is formed over a substrate 101, and a gate electrode 121 is formed thereon by a process similar to that of the fourth film pattern of the first embodiment. The width of the gate electrode is 0.1 μm to 10 μm.

  Next, a second insulating film 501 functioning as a gate insulating film, a first semiconductor film 502, and a conductive second semiconductor film 503 are sequentially formed over the substrate and the gate electrode.

  The second insulating film 501 is formed with a single layer or a stacked structure of an insulating film containing silicon nitride, silicon oxide, or other silicon by a thin film formation method such as a plasma CVD method or a sputtering method. In addition, a stacked structure of a silicon nitride film (silicon nitride oxide film), a silicon oxide film, and a silicon nitride film (silicon nitride oxide film) is preferable from the side in contact with the gate electrode of the second insulating film. In this structure, since the gate electrode is in contact with the silicon nitride film, deterioration due to oxidation can be prevented.

Alternatively, the second insulating film 501 may be formed using an insulating solution by a droplet discharge method, a coating method, a sol-gel method, or the like. Typical examples of the insulating solution include a solution in which fine particles of inorganic oxide are dispersed, polyimide, polyamide, polyester, acrylic, PSG (phosphorus glass), BPSG (phosphorus boron glass), and silicate-based SOG (Spin on Glass). ), SiO ₂ having a Si—CH ₃ bond typified by polysilazane SOG, alkoxysilicate SOG, polymethylsiloxane, and the like.

  As the first semiconductor film 502, an amorphous semiconductor, a semi-amorphous semiconductor in which an amorphous state and a crystalline state are mixed (also referred to as SAS), and crystal grains of 0.5 nm to 20 nm are formed in the amorphous semiconductor. A film having any state selected from a microcrystalline semiconductor and a crystalline semiconductor that can be observed is formed. In particular, a microcrystalline state in which grains of 0.5 nm to 20 nm can be observed is called a so-called microcrystal (μc). In any case, it is possible to use a semiconductor film whose main component is silicon, silicon germanium (SiGe), etc., and whose film thickness is 10 to 60 nm.

The SAS is a semiconductor having an intermediate structure between an amorphous structure and a crystal structure (including single crystal and polycrystal) and having a third state that is stable in terms of free energy. It also contains a crystalline region with short-range order and lattice distortion. A crystal region of 0.5 to 20 nm is observed in at least a part of the film, and when silicon is a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ⁻¹ . In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. Further, as a neutralizing agent for dangling bonds, SAS contains 1 atomic% or more of hydrogen or halogen.

The SAS is formed by glow discharge decomposition of a silicide gas. A typical silicide gas is SiH ₄ , and Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like are also used. By forming the silicide gas diluted with hydrogen or fluorine, or hydrogen or fluorine and one or more kinds of rare gas elements selected from helium, argon, krypton, or neon, the formation of SAS is facilitated. can do. At this time, it is preferable to dilute the silicide gas so that the dilution rate is in the range of 10 to 1000 times. In addition, SAS can be formed by using a method in which Si ₂ H ₆ and GeF ₄ are used and diluted with helium gas. The reaction generation of the coating by glow discharge decomposition is preferably performed under reduced pressure, and the pressure may be in the range of about 0.1 Pa to 133 Pa. High frequency power of 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz, for forming glow discharge may be supplied. The substrate heating temperature is preferably 300 ° C. or less, and a substrate heating temperature of 100 to 250 ° C. is recommended.

The crystalline semiconductor film is formed by crystallizing an amorphous semiconductor film or SAS by heating or laser irradiation. In addition, a crystalline semiconductor film may be directly formed. In this case, a crystalline semiconductor film is directly formed using heat or plasma using a fluorine-based gas such as GeF ₄ or F ₂ and a silane-based gas such as SiH ₄ or Si ₂ H ₆ .

  The second semiconductor film 503 has conductivity, and in the case of forming an n-channel TFT, an element belonging to Group 15, typically phosphorus or arsenic is added. In the case of forming a p-channel TFT, an element belonging to Group 13, typically boron, is added. The second semiconductor film is formed by a plasma CVD method in which a gas containing a group 13 or group 15 element such as boron, phosphorus, or arsenic is added to a silicide gas. Alternatively, after forming the semiconductor film, a solution containing an element belonging to Group 13 or 15 may be applied onto the semiconductor film and irradiated with a laser beam to form a conductive second semiconductor film. As the laser beam, a laser beam emitted from a known pulsed laser or continuous wave laser is appropriately used.

  Next, a first mask pattern 504 is formed over the second semiconductor film. The first mask pattern is preferably formed using a heat-resistant polymer material, and a polymer having an aromatic ring or a heterocyclic ring as a main chain and containing at least a highly polar heteroatom group in an aliphatic portion is a droplet. It is preferable to form by discharging by a discharging method. Typical examples of such a polymer substance include polyimide and polybenzimidazole. In the case where polyimide is used, it can be formed by discharging a solution containing polyimide onto the second semiconductor film 503 from a discharge port and baking at 200 ° C. for 30 minutes.

  The first mask pattern may be formed by previously forming a mask pattern having a liquid repellent surface and applying or discharging the above-described polymer material to a region not covered with the liquid repellent surface.

  Next, as illustrated in FIG. 5B, the second semiconductor film 503 and the first semiconductor film 502 are etched using the first mask pattern 504, so that the first semiconductor region 512 and the second semiconductor film 502, respectively. A semiconductor region 511 is formed. Thereafter, the first mask pattern is removed.

The first semiconductor film and the second semiconductor film are made of chlorine gas such as Cl ₂ , BCl ₃ , SiCl ₄ , and CCl ₄ , and fluorine such as CF ₄ , SF ₆ , NF ₃ , and CHF _3. Etching is performed using a system gas or O ₂ .

  Note that the first semiconductor region 512 may be formed using an organic semiconductor material by a printing method, a spray method, a spin coating method, a droplet discharge method, or the like. In this case, the number of processes can be reduced because the etching process is not necessary. The organic semiconductor material used in the present invention is preferably a π-electron conjugated polymer material whose skeleton is composed of conjugated double bonds. Typically, soluble polymer materials such as polythiophene, poly (3-alkylthiophene), polythiophene derivatives, and pentacene can be given.

  In addition, there is a material capable of forming the first semiconductor region by processing after forming a soluble precursor. Note that examples of the organic semiconductor material formed using such a precursor include polythienylene vinylene, poly (2,5-thienylene vinylene), polyacetylene, a polyacetylene derivative, and polyarylene vinylene.

  In the process of converting the precursor to an organic semiconductor, a reaction catalyst such as hydrogen chloride gas is added in addition to the heat treatment. Typical solvents for dissolving these soluble organic semiconductor materials include toluene, xylene, chlorobenzene, dichlorobenzene, anisole, chloroform, dichloromethane, γ-butyllactone, butyl cellosolve, cyclohexane, NMP (N-methyl-2 -Pyrrolidone), cyclohexanone, 2-butanone, dioxane, dimethylformamide (DMF) or THF (tetrahydrofuran).

  Next, as shown in FIG. 5C, a second mask pattern 521 is formed on the substrate. The second mask pattern can be formed using the same material as the first mask pattern.

  Next, the second semiconductor region 511 is etched using the second mask pattern 521 as a mask, and is also referred to as a third semiconductor region (a source region, a drain region, and a contact layer) as illustrated in FIG. ) 522. Thereafter, the second mask pattern is removed by a process using a stripping solution or an ashing process using oxygen.

Note that in the case where an organic semiconductor is used for the first semiconductor region, an organic conductive material such as polyacetylene, polyaniline, PEDOT (poly-ethylene thiophene), or PSS (poly-styrene sulfonate) is used instead of the third semiconductor region 522. A conductive layer to be formed may be formed. The conductive layer functions as a contact layer or a source electrode and a drain electrode.

Alternatively, a conductive layer formed of a metal element may be used for the third semiconductor region 522. In this case, since many organic semiconductor materials are p-type semiconductors that transport holes as carriers, it is desirable to use a metal having a high work function in order to make ohmic contact with the semiconductor region.

  Specifically, metals or alloys such as gold, platinum, chromium, palladium, aluminum, indium, molybdenum, and nickel are desirable. A conductive layer is formed by a printing method, a roll coater method, or a droplet discharge method using a conductive paste using these metals or alloy materials.

  Furthermore, a first semiconductor region formed with an organic semiconductor material, a conductive layer formed with an organic conductive material, and a conductive layer formed with a metal element may be stacked.

In the case where the first semiconductor region is formed of SAS, in addition to the structure in which the source region and the drain region cover the gate electrode as in the present embodiment, the end portions of the source region and the drain region and the gate A so-called self-aligned structure in which the ends of the electrodes coincide can be obtained. Furthermore, a structure in which the source region and the drain region are formed at a certain distance without covering the gate electrode can be employed. In this structure, off-state current can be reduced, so that contrast can be improved when the TFT is used as a switching element of a display device.

  Next, as illustrated in FIG. 5E, a conductive material is discharged over the source and drain regions by a droplet discharge method, and dried and baked, so that the source and drain electrodes 523 are formed. As the conductive material, a solution in which a conductor is dissolved or dispersed in a solvent is used.

  As a conductor of a solution in which a conductor is dissolved or dispersed in a solvent, Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Si , Ge, Zr, Ba and other metal particles, metal halide fine particles, or dispersible nanoparticles are used. Or indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), zinc oxide added with gallium (GZO), indium tin oxide containing silicon oxide, organic indium, organic Tin or the like is used. Alternatively, the first conductive layer may be formed by stacking conductive layers made of these materials.

  As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone are used.

  In addition, it is preferable to use a solution in which any one of gold, silver, and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value as the solution discharged from the discharge port. More preferably, low resistance and inexpensive silver or copper is used. However, when copper is used, it is preferable to provide a barrier film as a countermeasure against impurities.

  Here, as a barrier film in the case of using copper as a wiring, an insulating or conductive substance containing nitrogen such as silicon nitride, silicon oxynitride, aluminum nitride, titanium nitride, or tantalum nitride is preferably used. You may form by the droplet discharge method.

  Although depending on the diameter of each nozzle and the desired pattern shape, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. 1 μm or less is preferable. The particles are formed by a known method such as an electrolytic method, an atomizing method, or a wet reduction method, and the particle size is generally about 0.5 to 10 μm. However, when formed in a gas evaporation method, the nanomolecules protected by the dispersant are as fine as about 7 nm, and the nanoparticles are aggregated in the solvent when the surface of each particle is covered with a coating agent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

  In this embodiment, as the source electrode and the drain electrode 523, a conductive layer containing silver as a main component is formed. Note that the conductive layer is formed by irregularly overlapping fine particles, which are conductors, three-dimensionally. That is, it is composed of three-dimensional aggregate particles. For this reason, the surface has fine unevenness. Further, the fine particles are melted and become an aggregate of fine particles depending on the temperature of the conductive layer and the heating time. Since the size of the aggregate at this time increases depending on the temperature of the conductive layer and the heating time, the layer has a large surface level difference. The region where the fine particles are melted may have a polycrystalline structure. Moreover, the binder formed with an organic substance remains in the conductive layer depending on the heating temperature, atmosphere, and time.

  Next, a passivation film is preferably formed over the source and drain electrodes 523. The passivation film is formed by a thin film formation method such as a plasma CVD method or a sputtering method, using silicon nitride, silicon oxide, silicon nitride oxide, silicon oxynitride, aluminum oxynitride, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon (CN). ) Or other insulating material.

  Through the above steps, a channel-etched TFT having a small gate width, that is, a small channel length is manufactured without using a photomask.

(Embodiment 6)
In this embodiment mode, a manufacturing process of a TFT having a narrow gate electrode will be described with reference to FIGS. In the present embodiment, description will be made using a channel protection type TFT as the TFT. In this embodiment mode, the gate electrode is formed using the fourth film pattern formed in Embodiment Mode 1. However, the present invention is not limited to this, and any one of Embodiment Modes 2 to 4 can be used as appropriate. it can.

  As shown in FIG. 6A, the first insulating film 500 is formed over the substrate 101 using the first embodiment, and then the same process as the fourth film pattern of the first embodiment is performed. A gate electrode 121 is formed.

  Next, a second insulating film 501 and a first semiconductor film 502 are formed over the substrate and the gate electrode. Next, a protective film 601 is formed over the first semiconductor film 502 and in a region overlapping with the gate electrode 121. The formation method and the material are similar to those of the first mask pattern 504 described in Embodiment Mode 5.

  Next, as in Embodiment 5, a second semiconductor film (a semiconductor film having conductivity) 603 is formed. Next, a first mask pattern 504 is formed in the same manner as in the fifth embodiment.

  Next, as illustrated in FIG. 6B, the first semiconductor film and the second semiconductor film are etched using the first mask pattern, so that the first semiconductor region 612 and the second semiconductor region 611 are etched. Form. Thereafter, the first mask pattern is removed.

  Next, as illustrated in FIG. 6C, the source and drain electrodes 523 are formed over the second semiconductor region 611.

  Next, as illustrated in FIG. 6D, using the source and drain electrodes 523 as masks, the exposed portions of the second semiconductor region 611 are etched and divided to form source and drain regions 622. Through this step, the protective film 601 is exposed.

  Note that the method for forming the source region and the drain region is not limited to this embodiment mode, and the steps shown in Embodiment Mode 5 may be used. In addition, the formation process of the source region and the drain region of this embodiment may be applied to Embodiment 5.

  Without using a photomask, a channel protective TFT having a small gate width, that is, a small channel length can be manufactured.

(Embodiment 7)
In this embodiment, a manufacturing process of a forward staggered TFT having a small channel length will be described with reference to FIGS. In this embodiment, the fourth film pattern formed in the first embodiment is used as the source region and the drain region. However, the present invention is not limited to this step, and any of the second to fourth embodiments is appropriately used. Can be applied.

  As shown in FIG. 7A, a first insulating film 700 is formed over a substrate 101, and a first film pattern 102 is formed thereon. The first film pattern is formed of a conductive material in order to function as a source electrode and a drain electrode later. As this material and a manufacturing method, the same material as that of the first film pattern 102 of Embodiment 1 is used as appropriate. Next, a second film pattern 103 is formed on the first film pattern 102. Next, the light 104 is irradiated from the second film pattern 103 side.

  Next, as shown in FIG. 7B, the region 111 irradiated with light in the first film pattern 102 is heated, and the heat is also conducted to the second film pattern, so that the second film pattern Part of 103 is modified. Here, since a thermoplastic material is used for the second film pattern 103, a part thereof is plasticized.

  Next, in the second film pattern, the region 701 that has been modified and plasticized by heat is removed with a peeling solution or the like to form a third film pattern 702 as shown in FIG. Here, the third film pattern 702 functions as a mask pattern.

  Next, as shown in FIG. 7C, the first film pattern 102 is etched using the third film pattern 702 to form a first conductive layer 703. The first conductive layer 703 functions as a source electrode and a drain electrode. According to the present invention, it is possible to form a plurality of film patterns having an interval smaller than the laser beam diameter. For this reason, the distance between the conductive layers formed using the film pattern becomes minute, and the channel length of the TFT formed later can be shortened.

  Next, as illustrated in FIG. 7D, a first semiconductor region 711 having conductivity, a second semiconductor region 712, a second insulating film 713 functioning as a gate insulating film, and a gate electrode 714 are formed. Thus, a forward stagger type TFT is formed. Note that the first semiconductor region functions as a source region and a drain region, and the second semiconductor region functions as a channel formation region.

  Through the above steps, a forward staggered TFT with a small channel length is manufactured without using a photomask.

(Embodiment 8)
In this embodiment mode, a manufacturing process of a top-gate TFT having a small channel length will be described with reference to FIGS. In this embodiment, the method for forming a gate electrode will be described using Embodiment 2. However, the present invention is not limited to this process, and any of the first to fourth embodiments can be applied as appropriate.

  As shown in FIG. 40A, a first insulating film 2101 is formed over the substrate 101. As the first insulating film, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like is used as appropriate because it functions as a blocking film for contaminants or elements contained in the substrate 101.

  A semiconductor region 2102 is formed over the first insulating film 2101. The semiconductor region can be formed by etching an amorphous semiconductor film, a SAS, or a crystalline semiconductor film into a desired shape. Note that the crystalline semiconductor film is formed by a solid phase growth method, a solid phase growth method using a metal element, a laser crystallization method, or the like as appropriate. Further, an organic semiconductor material as listed in Embodiment Mode 5 is used.

  Next, a second insulating film 2103 and a first film pattern 2104 functioning as a gate insulating film are formed. Since the first film pattern 2104 functions as the first film pattern 102 of Embodiment 1, it is formed using a conductive film that absorbs light. Next, the second film pattern 103 is formed on the first film pattern, and the second film pattern is irradiated with light. Here, laser light 204 is used as light. As a result, the light transmitted through the second film pattern is collected and irradiated to the first film pattern. The first film pattern is partially heated, and the heat is conducted to the second film pattern, so that a part of the second film pattern is modified. Here, since a thermosetting material is used for the second film pattern, a part 212 of the second film pattern is cured. This cured region becomes the third film pattern 212.

  Next, as shown in FIG. 40B, the unmodified region of the second film pattern is removed, and the third film pattern 212 is exposed. Next, the fourth film pattern 2111 is formed by etching the first film pattern 2104 using the third film pattern 212. The fourth film pattern 2111 functions as a gate electrode.

  Next, as illustrated in FIG. 40C, an impurity imparting n-type or p-type is added to the semiconductor region 2102 using the fourth film pattern 2111 as a mask, so that impurity regions (source and drain regions) 2121 are formed. 2122 are formed. As a result, a p-channel TFT or an n-channel TFT is formed.

  Next, as illustrated in FIG. 40D, a third insulating film 2131 functioning as an interlayer insulating film is formed. Next, part of the third insulating film and the second insulating film is etched to expose part of the semiconductor region and form a contact hole. Next, second conductive layers 2132 and 2133 functioning as a source electrode and a drain electrode are formed in the contact holes.

  Through the above process, a top-gate TFT with a short channel length can be manufactured.

(Embodiment 9)
In this embodiment, a method for forming a contact hole of a TFT will be described with reference to FIG.

  A staggered TFT as shown in FIG. 41A is formed in accordance with Embodiment Mode 7. Here, the first insulating film 700, the first conductive layer 702, the first semiconductor region 711 having conductivity, the second semiconductor region 712, and the second insulating film functioning as a gate insulating film are formed over the substrate 101. A film 713 and a gate electrode 714 are formed. Thereafter, a protective film 715 is formed so as to cover the TFT. Note that the first semiconductor region functions as a source region and a drain region, and the second semiconductor region functions as a channel formation region.

  Next, as illustrated in FIG. 41B, a solution that forms a liquid repellent surface is discharged to a region where the first conductive layer 702 overlaps with the second insulating film 713 and the protective film 715, One mask pattern 751 is formed.

  The region having a liquid repellent surface is a region having a high surface contact angle with respect to the liquid. On this surface the liquid is repelled and becomes hemispherical. On the other hand, the region having the lyophilic surface is a region having a low surface contact angle with respect to the liquid. On this surface, the liquid spreads and spreads.

  For this reason, when two regions having different contact angles are in contact with each other, a region having a relatively high contact angle is a region having a lyophobic surface, and a region having a lower contact angle is a region having a lyophilic surface. When the solution is applied to or discharged from these two regions, the solution spreads on the surface of the region having the lyophilic surface, and is repelled and becomes hemispherical at the interface between the lyophilic surface and the region having the lyophobic surface. In the present invention, the difference in contact angle between two regions having different contact angles is preferably 30 degrees or more, and preferably 40 degrees or more.

  When the surface has irregularities, the contact angle is further increased in the region having the liquid repellent surface. That is, the liquid repellency is increased. On the other hand, the contact angle is further reduced in the region having the lyophilic surface. That is, lyophilicity is increased. For this reason, a layer having a uniform end can be formed by applying or discharging a solution containing the composition on each surface having irregularities and firing it.

Here, a material having a liquid repellent surface is applied or ejected to form a region having the liquid repellent surface. As an example of the composition of the solution that forms the liquid repellent surface, a silane coupling agent represented by a chemical formula of Rn—Si—X _(4-n) (n = 1, 2, 3) is used. Here, R is a substance containing a relatively inert group such as an alkyl group. X is a hydrolyzable group such as halogen, methoxy group, ethoxy group or acetoxy group, which can be bonded by condensation with a hydroxyl group on the substrate surface or adsorbed water.

Further, as a typical example of the silane coupling agent, by using a fluorine-based silane coupling agent (fluoroalkylsilane (FAS)) having a fluoroalkyl group in R, liquid repellency can be further improved. R of FAS has a structure represented by (CF ₃ ) (CF ₂ ) _x (CH ₂ ) _y (x: an integer of 0 or more and 10 or less, y: an integer of 0 or more and 4 or less), and a plurality of R Alternatively, when X is bonded to Si, R and X may all be the same or different. Typical FAS includes fluoroalkylsilanes such as heptadecafluorotetrahydrodecyltriethoxysilane, heptadecafluorotetrahydrodecyltrichlorosilane, tridecafluorotetrahydrooctyltrichlorosilane, and trifluoropropyltrimethoxysilane.

  As the solvent of the solution forming the liquid repellent surface, n-pentane, n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, decahydro A solvent that forms a liquid repellent surface, such as a hydrocarbon solvent such as naphthalene or squalane, or tetrahydrofuran is used.

  In addition, as an example of a composition of a solution that forms a liquid repellent surface, a material having a fluorocarbon chain (fluorine resin) can be used. Examples of the fluorine resin include polytetrafluoroethylene (PTFE; tetrafluoroethylene resin), perfluoroalkoxyalkane (PFA; tetrafluoroethylene perfluoroalkyl vinyl ether copolymer resin), and perfluoroethylene propylene copolymer (PFEP; four fluorine). Ethylene-hexafluoropropylene copolymer resin), ethylene-tetrafluoroethylene copolymer (ETFE; tetrafluoroethylene-ethylene copolymer resin), polyvinylidene fluoride (PVDF; vinylidene fluoride resin), polychlorotrifluoroethylene (PCTFE; trifluoroethylene chloride resin), ethylene-chlorotrifluoroethylene copolymer (ECTFE; trifluoroethylene chloride-ethylene copolymer resin), polytetrafluoroethylene-perfluorodiode Sole copolymer (TFE / PDD), polyvinyl fluoride (PVF; a vinyl fluoride resin) and the like.

  Subsequently, when the surface to which the solution forming the liquid repellent surface is attached is washed with ethanol, an extremely thin liquid repellent surface can be formed.

Further, an organic material that does not form a liquid repellent surface (that is, forms a lyophilic surface) as a mask pattern may be used to form a liquid repellent surface by subsequent treatment with CF ₄ plasma or the like. For example, a material in which a water-soluble resin such as polyvinyl alcohol (PVA) is mixed with a solvent such as H ₂ O can be used. Moreover, you may use combining PVA and another water-soluble resin. Furthermore, even when the mask pattern has a liquid repellent surface, the liquid repellency can be further improved by performing the plasma treatment or the like.

Alternatively, plasma treatment can be performed by preparing an electrode provided with a dielectric and generating plasma so that the dielectric is exposed to plasma using air, oxygen, or nitrogen. In this case, the dielectric need not cover the entire electrode surface. As the dielectric, a fluorine-based resin can be used. In the case of using a fluorine-based resin, surface modification is performed by forming CF ₂ bonds on the surface to be formed, and liquid repellency is exhibited. Plasma treatment is also performed.

  Next, a second mask pattern 752 is formed by applying or discharging a solution that forms the lyophilic surface. Typical examples of lyophilic solutions include acrylic resin, polyimide resin, melamine resin, polyester resin, polycarbonate resin, phenol resin, epoxy resin, polyacetal, polyether, polyurethane, polyamide (nylon), furan resin, diallyl phthalate An organic resin such as a resin, siloxane, or polysilazane can be used. Further, a solution using a polar solvent such as water, alcohol, ether, dimethylformamide, dimethylacetamide, dimethylsulfoxide, N-methylpyrrolidone, hexamethylphosphamide, chloroform, methylene chloride or the like can be used. As a method for forming the second mask pattern, a droplet discharge method, an inkjet method, a spin coating method, a roll coating method, a slot coating method, or the like can be applied.

  Since the first mask pattern 751 has a liquid repellent surface, the second mask pattern 752 is formed in the outer edge of the first mask pattern, that is, in a region where the first mask pattern is not formed.

  Instead of the above process, after the solvent of the first mask pattern is dried, a solution for forming a liquid repellent surface may be applied to form the second mask pattern. Further, the surface of the first mask pattern may be cleaned with ethanol. By these steps, an extremely thin liquid repellent surface can be formed. The composition of the first mask pattern remains on the surface of the protective film 715 or penetrates into the film.

  Next, as shown in FIG. 41C, the first mask pattern 751, the protective film 715, and the second insulating film 713 are etched using the second mask pattern 752 as a mask, and the first conductive layer 702 is etched. To expose a part of

  Next, as illustrated in FIG. 41D, a third conductive layer 754 is formed. The third conductive layer 754 functions as a source wiring and a drain wiring.

  Note that as shown in FIG. 41E, the third conductive layer 764 may be formed using the second mask pattern 752 as an interlayer insulating film without being removed.

  Through the above steps, a contact hole can be formed without using a photomask.

(Embodiment 10)
In the present embodiment, a droplet discharge device that can be used for pattern formation in the above embodiment will be described. In FIG. 24, a region 1930 where one panel is formed on the substrate 1900 is indicated by a dotted line.

  FIG. 24 shows one mode of a droplet discharge device used for forming a pattern such as a wiring. The droplet discharge means 1905 has a head, and the head has a plurality of nozzles. In this embodiment, a case where three heads (1903a, 1903b, and 1903c) having ten nozzles are described will be described. However, the number of nozzles and the number of heads are set according to a processing area, a process, and the like. Can do.

  The head is connected to the control means 1907, and the control means controls the computer 1910 to draw a preset pattern. The drawing timing may be performed using, for example, the marker 1911 formed on the substrate 1900 fixed on the stage 1931 as a reference point. Further, the edge of the substrate 1900 may be used as a reference point. These reference points are detected by an imaging means 1904 such as a CCD, and converted into a digital signal by an image processing means 1909. The computer 1910 recognizes the digitally changed signal, generates a control signal, and sends it to the control means 1907. When drawing a pattern in this way, the distance between the pattern forming surface and the tip of the nozzle is 0.1 cm to 5 cm, preferably 0.1 cm to 2 cm, and more preferably about 0.1 cm. By shortening the interval in this way, droplet landing accuracy is improved.

  At this time, information on the pattern formed on the substrate 1900 is stored in the storage medium 1908. Based on this information, a control signal is sent to the control means 1907, and each head 1903a, 1903b, 1903c is individually controlled. be able to. That is, droplets having different compositions can be ejected from the nozzles of the heads 1903a, 1903b, and 1903c. For example, the nozzles of the heads 1903a and 1903b can discharge droplets having a composition having an insulating material, and the nozzles of the head 1903c can discharge droplets having a composition having a conductive film material.

  Furthermore, each nozzle of the head can be controlled individually. Since the nozzles can be individually controlled, droplets having different compositions can be discharged from a specific nozzle. For example, the same head 1903a can be provided with a nozzle that discharges a droplet including a composition including a conductive film material and a nozzle that discharges a droplet including a composition including an insulating material.

The nozzle is connected to a tank filled with the composition.

  In the case where a droplet discharge process is performed on a large area as in the step of forming an interlayer insulating film, a composition having an interlayer insulating film material is preferably discharged from all nozzles. Further, a composition having an interlayer insulating film material may be discharged from all nozzles of a plurality of heads. As a result, throughput can be improved. Needless to say, in the interlayer insulating film forming step, a droplet discharge treatment may be performed on a large area by discharging a composition having an interlayer insulating film material from one nozzle and performing a plurality of scans.

  Then, the pattern can be formed on the large mother glass by zigzaging or reciprocating the head. At this time, the head and the substrate may be relatively scanned a plurality of times. When scanning the head with respect to the substrate, the head may be inclined obliquely with respect to the traveling direction.

  In the case where a plurality of panels are formed from a large mother glass, the width of the head is preferably about the same as the width of one panel. This is because a pattern can be formed in one scan of the region 1930 where one panel is formed, and high throughput can be expected.

  The head width may be smaller than the panel width. At this time, a plurality of small heads may be arranged in series so as to be approximately the same as the width of one panel. By arranging a plurality of small heads in series, it is possible to prevent the occurrence of head deflection, which is a concern as the head width increases. Of course, the pattern may be formed by scanning a narrow head a plurality of times.

  The step of discharging the composition droplets by such a droplet discharge method is preferably performed under reduced pressure. This is because the solvent of the composition evaporates and the steps of drying and firing the composition can be omitted before the composition is discharged and landed on the object to be processed. Further, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. The step of dropping the composition may be performed in a nitrogen atmosphere or an organic gas atmosphere.

  As a droplet discharge method, a piezo method can be used. The piezo method is also used in inkjet printers because of its excellent droplet controllability and high degree of freedom in ink selection. The piezo method includes a vendor type (typically a Multi Layer Piezo) type and a piston type (typically a Multi Layer Ceramic Hyper Integrated Segments type), a side wall type, and a roof wall type. Further, depending on the solvent of the solution, a droplet discharge method using a so-called thermal method in which the heating element generates heat to generate bubbles to push out the solution may be used.

  Next, a method for manufacturing an active matrix substrate and a display panel having the active matrix substrate will be described with reference to FIGS. In this embodiment, a liquid crystal display panel is used as the display panel. 17 to 19 schematically show the longitudinal cross-sectional structures of the pixel portion and the connection terminal portion, and the planar structures corresponding to AB and CD are shown in FIGS. In this embodiment, the first embodiment will be described as a gate electrode formation step.

  As shown in FIG. 17A, the surface of the substrate 800 is oxidized at 400 degrees to form an insulating film 801 having a thickness of 100 nm. This insulating film functions as an etching stopper film for a conductive film to be formed later. Next, after a first conductive layer 802 is formed over the insulating film 801 and a light-transmitting material is discharged by a droplet discharge method onto a region where a gate electrode is to be formed on the first conductive layer later, Drying or baking is performed to form a first film pattern 803 having a curvature. As the substrate 800, an AN100 glass substrate manufactured by Asahi Glass Co., Ltd. is used, and as the first conductive layer 802, a tungsten film having a thickness of 100 nm is formed by a sputtering method using a tungsten target and an argon gas. Polyimide is used for the first film pattern.

  Note that a layer having a liquid repellent surface is formed over the first conductive layer 802 before the first film pattern 803 is formed, so that the material of the first film pattern is repelled on the surface and the curvature of the first film pattern 803 is reduced. A high film pattern is formed. The layer having a liquid repellent surface is formed by the method shown in Embodiment Mode 9.

Next, the first conductive layer 802 is irradiated with light 804 through the first film pattern 803. As light, laser light emitted from an Nd: YVO ₄ laser is used. Here, since the first film pattern has a curvature, the laser light is condensed and applied to the first conductive layer 802. In the first conductive layer, the region irradiated with the laser light is heated. The heat of the heated region 805 is conducted to the first film pattern, and a part of the first film pattern is cured to form the first mask pattern 806. Thereafter, the uncured first film pattern is removed using a stripping solution. Here, since the first film pattern is heated by the light condensed by the first film pattern, a fine mask pattern can be formed.

  Next, as shown in FIG. 17B, second mask patterns 807 and 808 are formed. Here, polyimide is discharged to a region where a gate wiring and a connection conductive layer are to be formed later, and heated to 200 ° C. for 30 minutes to form a second mask pattern. The gate wiring does not need to be miniaturized because the gate wiring needs a margin for reducing the resistance and the connection conductive layer needs a margin for forming the contact hole. Therefore, the step of miniaturizing the third mask pattern by irradiating it with laser light is omitted. However, the second mask pattern may be formed in the same manner as the first mask pattern. In this case, the aperture ratio of the pixel can be improved.

  Next, as illustrated in FIG. 17C, part of the first conductive layer is etched using the first mask pattern 806 and the second mask patterns 807 and 808, so that the gate wiring 811, the gate electrode 812 and a connection conductive layer 813 are formed. Thereafter, the first mask pattern and the second mask patterns 806 to 808 are peeled off using a peeling solution. FIG. 17C schematically shows a longitudinal sectional structure, and FIG. 20 shows a planar structure corresponding to AB and CD after removing the first mask pattern and the second mask pattern. So refer simultaneously.

Next, as illustrated in FIG. 17D, a gate insulating film 814 is formed by a plasma CVD method. As the gate insulating film 814, a silicon oxynitride film having a thickness of 110 nm is formed by a plasma CVD method using SiH ₄ and N ₂ O (flow rate ratio SiH ₄ : N ₂ O = 1: 200) in a chamber heated at 400 ° C. (H: 1.8%, N: 2.6%, O: 63.9%, Si: 31.7%) are formed.

  Next, a first semiconductor film 815 and an n-type second semiconductor film 816 are formed. As the first semiconductor film 815, an amorphous silicon film with a thickness of 150 nm is formed by a plasma CVD method. Next, after removing the oxide film on the surface of the amorphous silicon film, a semi-amorphous silicon film having a thickness of 50 nm is formed as the second semiconductor film 816 using silane gas and phosphine gas.

  Next, third mask patterns 817 and 818 are formed over the second semiconductor film. The third mask pattern is formed by discharging polyimide onto the second semiconductor film by a droplet discharge method and heating at 200 ° C. for 30 minutes. The third mask patterns 817 and 818 are discharged onto a region where a first semiconductor region is formed later.

Next, as shown in FIG. 17E, the second semiconductor film 816 is etched using the third mask pattern to form first semiconductor regions (source and drain regions, contact layers) 821 and 822. Form. The second semiconductor film is etched using a mixed gas having a flow rate ratio of CF ₄ : O ₂ = 10: 9. Thereafter, the third mask patterns 817 and 818 are peeled using a peeling solution.

Next, a fourth mask pattern 823 is formed to cover the first semiconductor regions 821 and 822 and the first semiconductor film 815 formed therebetween. The fourth mask pattern is formed by the same material and method as the third mask pattern. The first semiconductor film 815 is etched using the fourth mask pattern to form a second semiconductor region 831 as shown in FIG. 17F and the gate insulating film 814 is exposed. The first semiconductor film is etched using a mixed gas having a flow rate ratio of CF ₄ : O ₂ = 10: 9, and then ashing using oxygen is performed. Thereafter, the fourth mask pattern 823 is peeled using a peeling solution. A planar structure corresponding to the longitudinal sectional structures AB and CD in FIG. 17F is shown in FIG.

  Next, as shown in FIG. 18A, a fifth mask pattern 832 is formed. The fifth mask pattern is formed by discharging a solution for forming a liquid repellent surface in a region where the gate insulating film 814 and the connection conductive layer 813 overlap with each other by a droplet discharge method. Here, a solution in which a fluorinated silane coupling agent is dissolved in an alcohol solvent is used as a solution for forming the liquid repellent surface. The fifth mask pattern 832 is a protective film for forming a sixth mask pattern 833 used for forming a contact hole in a region where the drain electrode and the connection conductive layer 813 are connected later.

  Next, a sixth mask pattern 833 is formed. The sixth mask pattern is a mask for forming the first contact hole, and is formed by discharging polyimide by a droplet discharge method and heating at 200 degrees for 30 minutes. At this time, since the fifth mask pattern 832 is lyophobic and the sixth mask pattern 833 is lyophilic, the sixth mask pattern 833 is not formed in the region where the fifth mask pattern is formed. Not formed.

Next, the fifth mask pattern 832 is removed by oxygen ashing to expose a part of the gate insulating film 814. Next, the exposed gate insulating film is etched using the sixth mask pattern 833. The gate insulating film is etched using CHF ₃ . Thereafter, the sixth mask pattern is stripped by oxygen ashing and etching using a stripping solution.

  Next, as shown in FIG. 18B, second conductive layers 841 and 842 are formed by a droplet discharge method. The second conductive layer will be a later source wiring and drain wiring. Here, the second conductive layer 841 is formed to be connected to the first semiconductor region 821, and the second conductive layer 842 is formed to be connected to the first semiconductor region 822 and the connection conductive layer 813. . The second conductive layers 841 and 842 are discharged by discharging a solution in which Ag (silver) particles are dispersed, heated at 100 ° C. for 30 minutes, and then heated at 230 ° C. for 1 hour in an atmosphere having an oxygen concentration of 10%. Bake. A planar structure corresponding to the longitudinal sectional structures AB and CD in FIG. 18B is shown in FIG.

Next, a protective film 843 is formed. As the protective film, a silicon nitride film with a thickness of 100 nm is formed by a sputtering method using a silicon target and argon and nitrogen (flow ratio Ar: N ₂ = 1: 1) as a sputtering gas.

  Next, as illustrated in FIG. 18C, seventh mask patterns 851 and 852 are provided in a region where the protective film 843 and the connection conductive layer 813 overlap, and a region where the gate wiring and the source wiring are connected to the connection terminal. After the formation, an interlayer insulating film 853 is formed. The seventh mask pattern is a mask used for forming an interlayer insulating film to be formed later. As a seventh mask pattern, a solution for forming a liquid repellent surface (a solution in which a fluorinated silane coupling agent is dissolved in a solvent) is discharged, and polyimide is discharged as an interlayer insulating film 853 by a droplet discharge method. Both are baked by heating at a temperature of 30 minutes and heating at 300 ° C. for 1 hour.

  Note that as a material of the interlayer insulating film 853, in addition to a heat-resistant organic resin such as polyimide, acrylic, polyamide, and siloxane, an inorganic material, a low dielectric constant (low-k) material, silicon oxide, silicon nitride, silicon oxynitride, PSG (phosphorus glass), BPSG (phosphorus boron glass), an alumina film, or the like can be used.

Next, the seventh mask patterns 851 and 852 are etched using a mixed gas of CF ₄ , O ₂ , and He (flow ratio CF ₄ : O ₂ : He = 8: 12: 7), and then the protective film 843. Then, part of the gate insulating film 814 is etched to form a second contact hole. In this etching step, the protective film 843 and the gate insulating film 814 in a region where the gate wiring and the source wiring are connected to the connection terminal are also etched.

  Next, as shown in FIG. 18D, after the third conductive layer 861 is formed, an eighth mask pattern 862 is formed. Here, as the third conductive layer 861, indium tin oxide (ITO) containing silicon oxide with a thickness of 110 nm is formed by a sputtering method, and polyimide that is an eighth mask pattern is formed in a region where a pixel electrode is formed later. Is dropped by a droplet discharge method and heated at 200 degrees for 30 minutes.

  In this embodiment, in order to manufacture a transmissive liquid crystal display panel, the pixel electrode is formed of ITO containing silicon oxide. Instead, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide is used. A predetermined pattern may be formed using a solution containing (IZO), zinc oxide added with gallium (GZO), indium tin oxide containing silicon oxide, and the like, and the pixel electrode may be formed by baking. Further, when a reflective liquid crystal display panel is manufactured, metal particles such as Ag (silver), Au (gold), Cu (copper)), W (tungsten), and Al (aluminum) are mainly used. A solution can be used.

  Next, the third conductive film is etched using the eighth mask pattern to form a first pixel electrode 871. In this etching step, the third conductive layer formed in the region where the gate wiring and the source wiring are connected to the connection terminal is also etched. Thereafter, the eighth mask pattern is stripped using a stripping solution. Note that FIG. 23 is a plan view corresponding to AB and CD in FIG.

  The first pixel electrode 871 is connected to the connection conductive layer 813 in the second contact hole. Since the connection conductive layer 813 is connected to the second conductive layer 842, the first pixel electrode 871 and the second conductive layer 842 are electrically connected. In this embodiment, the second conductive layer 842 is formed of silver (Ag), and the first pixel electrode 871 is formed of ITO containing silicon oxide, but these are not directly connected. Silver is not oxidized, and the drain wiring and the pixel electrode can be electrically connected without increasing the contact resistance.

  As another method for forming the pixel electrode, a pixel electrode can be formed without an etching step by selectively dropping a solution containing a conductive material by a droplet discharge method. Further, the pixel electrode can be formed by discharging a solution having conductivity after forming a solution for forming the liquid repellent surface in a region where the pixel electrode is not formed later, using the mask pattern. In this case, the mask pattern can be removed by ashing using oxygen. Further, the mask pattern may be left without being removed.

  Through the above steps, an active matrix substrate can be formed.

  Next, as illustrated in FIG. 19A, an insulating film is formed by a printing method or a spin coating method so as to cover the first pixel electrode 871, and an alignment film 872 is formed by rubbing. Note that the alignment film 872 can also be formed by oblique evaporation.

Next, a closed loop sealing material 873 is formed in a peripheral region where the pixels are formed by a droplet discharge method. A liquid crystal material is dropped inside the closed loop formed by the sealant 873 by a dispenser type (dropping type).

  Here, a step of dropping the liquid crystal material is shown with reference to FIG. FIG. 25A is a perspective view of a step of dropping a liquid crystal material by a dispenser 2701, and FIG. 25B is a cross-sectional view taken along a line AB in FIG.

  A liquid crystal material 2704 is dropped or discharged from the dispenser 2701 so as to cover the pixel portion 2703 surrounded by the sealant 2702. The dispenser 2701 may be moved, or the liquid crystal layer can be formed by fixing the dispenser 2701 and moving the substrate 2700. Alternatively, a plurality of dispensers 2701 may be installed to drop the liquid crystal material at a time.

  As shown in FIG. 25B, the liquid crystal material 2704 can be selectively dropped or discharged only in a region surrounded by the sealant 2702.

  Next, as illustrated in FIG. 19B, the counter substrate 881 provided with the alignment film 883 and the second pixel electrode (counter electrode) 882 is bonded to the substrate 800 in a vacuum, and ultraviolet curing is performed. Thus, a liquid crystal layer 884 filled with a liquid crystal material is formed.

  The sealant 873 may be mixed with a filler, and the counter substrate 881 may be formed with a color filter, a shielding film (black matrix), or the like. Further, as a method for forming the liquid crystal layer 884, a dip type (pumping type) in which a liquid crystal material is injected using a capillary phenomenon after the counter substrate is bonded can be used instead of the dispenser type (dropping type).

Although the liquid crystal material is dropped on the pixel portion here, the substrate having the pixel portion may be attached after the liquid crystal material is dropped on the counter substrate side.

  Next, as illustrated in FIG. 19C, in the case where an insulating film is formed over each end portion of the gate wiring 811 and the source wiring (not illustrated), the insulating film is removed, and then anisotropic conduction is performed. A connection terminal (a connection terminal 886 connected to the gate wiring and a connection terminal connected to the source wiring are not illustrated) is pasted through the layer 885. Furthermore, it is preferable that the connection portion between each wiring and the connection terminal is sealed with a sealing resin. With this structure, it is possible to prevent moisture from the cross section from entering the pixel portion and deteriorating. Through the above process, a liquid crystal display panel can be formed.

  Through the above process, a liquid crystal display panel can be manufactured. Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion. In this case, it is possible to prevent electrostatic breakdown by manufacturing in the same process as the above TFT and connecting the gate wiring of the pixel portion and the drain or source wiring of the diode.

  Note that any of Embodiment Modes 2 to 10 can be applied to this example.

  In this embodiment, a method for manufacturing a light-emitting display panel as a display panel will be described with reference to FIGS. 27 to 30 schematically show the longitudinal cross-sectional structures of the pixel portion and the connection terminal portion, and FIGS. 31 to 34 show planar structures corresponding to CD and EF, respectively. In this embodiment, the first embodiment will be described as a gate electrode formation step. 27 to 30 represent connection terminal portions, and CD and EF in FIGS. 27 to 34 represent switching TFTs, driving TFTs, and light emitting elements in each pixel of the pixel portion. The area | region provided is shown.

  As shown in FIG. 27A, similarly to Example 1, the surface of the substrate 2001 is oxidized at 400 degrees to form an insulating film 2002 having a thickness of 100 nm. Next, a first conductive layer 2003 is formed, and a light-transmitting material is dropped on a region where a gate electrode is to be formed later by a droplet discharge method over the first conductive layer, and then dried or baked. First film patterns 2004 and 2005 are formed. As the substrate 2001, an AN100 glass substrate manufactured by Asahi Glass Co., Ltd. is used. A tungsten film having a thickness of 100 nm is formed by sputtering for the first conductive layer, and polyimide is used for the first film pattern.

  Note that before the first film patterns 2004 and 2005 are formed, a layer having a liquid repellent surface is formed on the first conductive layer 2003, so that the material of the first film pattern is repelled on the surface. A film pattern having a high curvature is formed. The layer having a liquid repellent surface is formed by the method shown in Embodiment Mode 9.

Next, the first conductive layer 2003 is irradiated with laser beams 2006 and 2007 through the first film patterns 2004 and 2005 from the substrate. Here, laser light emitted from an Nd: YVO ₄ laser is used as the laser light. As a result, a part of the first film pattern is cured, and the first mask patterns 2010 and 2011 are formed. Thereafter, the first film patterns 2004 and 2005 are removed using a stripping solution. Here, since a part of the first film pattern is heated by the light condensed by the first film pattern, a fine mask pattern can be formed.

  Next, second mask patterns 2012 and 2013 are formed. The second mask pattern is formed using the same material as the second mask pattern of the first embodiment. The second mask pattern is formed on a gate wiring, a gate electrode, and a connection conductive layer that are formed later.

  Next, as illustrated in FIG. 27C, part of the first conductive layer is etched using the first mask pattern and the second mask pattern 2010 to 2013, so that the gate wiring 2015 and the gate electrode 2016 are etched. , 2018 and the capacitor electrode 2017 are formed. Thereafter, the first and second mask patterns 2010 to 2013 are stripped using a stripping solution.

  Next, as shown in FIG. 28A, a gate insulating film 2021, a first semiconductor film 2022, and a second semiconductor film 2023 exhibiting n-type are formed by plasma CVD as in Example 1. Third mask patterns 2024 to 2027 are formed on the second semiconductor film on regions where the first and third semiconductor regions are to be formed later. The third mask pattern can be formed in the same manner as the third mask patterns 817 and 818 of the first embodiment.

  Next, as shown in FIG. 28B, as in the first embodiment, the second semiconductor film 2023 is etched using the third mask pattern to form the first semiconductor regions 2031 to 2034. To do. Thereafter, the third mask pattern is peeled off using a peeling liquid.

Next, fourth mask patterns 2035 and 2036 are formed to cover the first semiconductor regions 2031 to 2034 and the first semiconductor film 2022 formed therebetween. Next, the first semiconductor film 2022 is etched using the fourth mask pattern to form second semiconductor regions 2041 and 2042 as shown in FIG. 28C and one of the gate insulating films 2021. Part is exposed. Thereafter, the fourth mask patterns 2035 and 2036 are peeled off using a peeling solution. In addition, since the planar structure corresponding to the longitudinal cross-section structure CD and EF at this time is shown in FIG. 31, it refers simultaneously.

  Next, as in Example 1, fifth mask patterns 2043 and 2044 are formed. The fifth mask pattern discharges a solution that forms a liquid repellent surface in a region where the gate insulating film 2021 and the capacitor electrode 2017 overlap with each other by a droplet discharge method. Next, a sixth mask pattern 2045 is formed. The sixth mask pattern is a mask used for forming the first contact hole, and is formed by discharging polyimide by a droplet discharge method and heating at 200 degrees for 30 minutes. At this time, since the fifth mask patterns 2043 and 2044 are lyophobic and the sixth mask pattern 2045 is lyophilic, the sixth mask pattern is not formed in the region where the fifth mask pattern is formed. 2045 is not formed.

  Next, the fifth mask patterns 2043 and 2044 are removed by oxygen ashing to expose part of the gate insulating film 2021. Next, the exposed gate insulating film is etched using the sixth mask pattern 2045 in the same manner as in the first embodiment. Thereafter, the sixth mask pattern is stripped by oxygen ashing and etching using a stripping solution.

  Next, as illustrated in FIG. 29A, second conductive layers 2051 to 2054 are formed by a droplet discharge method. The second conductive layer will be a later source wiring and drain wiring. Here, the second conductive layer 2051 is connected to the first semiconductor region 2031, the second conductive layer 2052 is connected to the first semiconductor region 2032 and the capacitor electrode 2017, and the second conductive layer 2053 is connected to the first semiconductor region 2031. The second conductive layer 2054 is connected to the first semiconductor region 2034 and is connected to the first semiconductor region 2033. Note that FIG. 32 shows a plan view corresponding to CD and EF in FIG. Note that as shown in FIG. 32, the second conductive layer 2053 functions as a power supply line and a capacitor wiring.

  Through the above steps, the switching TFT 2060a, the driving TFT 2060c, the capacitor 2060b, and an active matrix substrate including them can be formed.

  Next, as shown in FIG. 29B, after the third conductive film is formed, the second conductive layer 2054 of the driving TFT 2060c is etched into a desired shape using the seventh mask pattern. A first pixel electrode 2055 connected to is formed. The third conductive film is formed of indium tin oxide (ITO) containing silicon oxide with a thickness of 110 nm and etched into a desired shape to form the first pixel electrode 2055 as in the first embodiment. In this etching step, the third conductive layer formed in a region where the gate wiring and the source wiring are connected to the connection terminal may be etched.

  As another method for forming the first pixel electrode, a solution containing a conductive material can be selectively dropped by a droplet discharge method to form the first pixel electrode without an etching step. Further, the first pixel electrode can be formed by discharging a solution having conductivity after forming a solution for forming the liquid repellent surface as a mask pattern in a region where the first pixel electrode is not formed later. . In this case, the mask pattern can be removed by ashing using oxygen. Further, the mask pattern may be left without being removed.

  Alternatively, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), zinc oxide added with gallium (GZO), and indium oxide containing silicon oxide are used instead of the first pixel electrode material. Tin may be used.

  In this embodiment, the pixel electrode is formed of a light-transmitting conductive film for a structure in which emitted light is emitted to the substrate 2001 side, that is, a transmissive light-emitting display panel. In the case of manufacturing a reflection type light emitting display panel that emits light on the opposite side, Ag (silver), Au (gold), Cu (copper)), W (tungsten), Al (aluminum), etc. The first pixel electrode can be formed using a solution containing metal particles as a main component.

  Thereafter, the seventh mask pattern is stripped using a stripping solution. Note that FIG. 33 shows a plan view corresponding to CD and EF in FIG.

  Next, a protective layer 2061 of silicon nitride or silicon nitride oxide and an insulating layer 2062 are formed over the entire surface. The insulating layer 2062 is formed by etching after forming an insulating layer over the entire surface by spin coating or dipping. Further, using the insulating layer 2062 as a mask, the protective layer 2061 is formed by etching the insulating layer so that the first pixel electrode 2055 is exposed. Further, if the insulating layer 2062 is formed by a droplet discharge method, etching is not necessarily required.

  The insulating layer 2062 is formed using silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, or other inorganic insulating materials, or acrylic acid, methacrylic acid and derivatives thereof, polyimide, aromatic, or aromatic. Bonded to heat-resistant polymers such as polyamide, polybenzimidazole, or inorganic siloxanes containing Si—O—Si bonds among silicon, oxygen, and hydrogen compounds formed from siloxane-based materials. It can be formed of an organic siloxane insulating material in which hydrogen is substituted with an organic group such as methyl or phenyl. When a photosensitive or non-photosensitive material such as acrylic or polyimide is used, the side surface has a shape in which the curvature radius changes continuously, and the upper thin film is formed without being cut off. The insulating layer can be formed using an insulating layer containing a color pigment, a resist, or the like. In this case, since the insulating layer functions as a light shielding film, the contrast of a display device to be formed later is improved. Note that FIG. 34 shows a plan view corresponding to CD and EF in FIG.

  Next, as illustrated in FIG. 30A, a layer 2073 containing a light-emitting substance is formed by an evaporation method, a spin coating method, an inkjet method, or the like, and then a second pixel electrode 2074 is formed to form a light-emitting element 2075. Form. The light emitting element 2075 is connected to the driving TFT 2060c. Thereafter, a protective laminate is formed to seal the light emitting element 2075. The protective laminate is a laminate of a first inorganic insulating film, a stress relaxation film, and a second inorganic insulating film.

  Note that before the layer 2073 containing a light-emitting substance is formed, heat treatment is performed at 200 ° C. under atmospheric pressure to remove moisture adsorbed in or on the insulating layer 2062. Further, heat treatment is performed at 200 to 400 ° C., preferably 250 to 350 ° C. under reduced pressure, and a layer 2073 containing a luminescent material is formed by vacuum deposition or droplet discharge under reduced pressure without being exposed to the air as it is. Is preferred.

  Further, the surface of the first pixel electrode 2055 may be exposed to oxygen plasma or may be irradiated with ultraviolet light for surface treatment.

  The layer 2073 containing a light-emitting substance is formed of a charge injecting and transporting substance containing an organic compound or an inorganic compound and a light-emitting material, and a medium molecular organic compound typified by a low molecular weight organic compound, a dendrimer, an oligomer, etc. One or a plurality of layers selected from high molecular organic compounds may be included and combined with an inorganic compound having electron injection / transport properties or hole injection / transport properties.

Among the charge injecting and transporting substances, examples of the substance having a particularly high electron transporting property include tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ) Bis (10-hydroxy-benzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), quinoline skeleton or benzoquinoline Examples thereof include metal complexes having a skeleton.

Examples of the substance having a high hole-transport property include 4,4′-bis [N- (1-naphthyl) -N-phenyl-amino] biphenyl (abbreviation: α-NPD) and N, N′-diphenyl- N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4,4′-diamine (abbreviation: TPD) or 4,4 ′, 4 ″ -tris (N, N-diphenyl-amino) ) Aromatic amines such as triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA) ( That is, a compound having a benzene ring-nitrogen bond).

Among the charge injecting and transporting materials, materials having particularly high electron injecting properties include alkali metals or alkaline earths such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ) and the like. Metal compounds can be mentioned. In addition, a mixture of a substance having a high electron transporting property such as Alq ₃ and magnesium (Mg) or an alkaline earth metal may be used.

Among the charge injection / transport materials, examples of the material having a high hole injection property include molybdenum oxide (MoO _x ), vanadium oxide (VO _x ), ruthenium oxide (RuO _x ), and tungsten oxide (WO _x ). And metal oxides such as manganese oxide (MnO _x ). In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (CuPc) can be given.

  The light emitting layer may be configured to perform color display by forming light emitting layers having different emission wavelength bands for each pixel. Typically, a light emitting layer corresponding to each color of R (red), G (green), and B (blue) is formed. In this case as well, by providing a filter (colored layer) that transmits light in the emission wavelength band on the light emission side of the pixel, the color purity is improved and the pixel portion is mirrored (reflected). Prevention can be achieved. By providing the filter (colored layer), it is possible to omit a circularly polarized plate that has been considered necessary in the past, and it is possible to eliminate the loss of light emitted from the light emitting layer. Furthermore, a change in color tone that occurs when the pixel portion (display screen) is viewed obliquely can be reduced.

There are various materials for the light emitting material forming the light emitting layer. As a low molecular weight organic light-emitting material, 4- (dicyanomethylene) 2-methyl-6- [2- (1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCJT), 4- (dicyanomethylene) -2-tert-butyl-6- [2- (1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCJTB) , Perifuranthene, 2,5-dicyano-1,4-bis [2- (10-methoxy-1,1,7,7-tetramethyljulolidin-9-yl) ethenyl] benzene, N, N′-dimethylquinacridone (abbreviation: DMQd), coumarin 6, coumarin 545T, tris (8-quinolinolato) aluminum (abbreviation: Alq _3), 9,9'-bianthryl, 9,10-diphenyl anthracene (abbreviation: DPA) and 9,10 Di (2-naphthyl) anthracene (abbreviation: DNA), or the like can be used. Other substances may also be used.

  On the other hand, the high molecular organic light emitting material has higher physical strength than the low molecular weight material, and the durability of the device is high. In addition, since the film can be formed by coating, the device can be manufactured relatively easily. The structure of the light emitting element using the polymer organic light emitting material is basically the same as that when the low molecular weight organic light emitting material is used, and is a layer / anode containing a cathode / light emitting substance. However, when forming a layer containing a light emitting material using a high molecular weight organic light emitting material, it is difficult to form a layered structure as in the case of using a low molecular weight organic light emitting material, and in many cases two layers are formed. It becomes a structure. Specifically, the structure is cathode / light-emitting layer / hole transport layer / anode.

  Since the light emission color is determined by the material for forming the light emitting layer, a light emitting element exhibiting desired light emission can be formed by selecting these materials. Examples of the polymer light emitting material that can be used for forming the light emitting layer include polyparaphenylene vinylene, polyparaphenylene, polythiophene, and polyfluorene.

  Examples of the polyparaphenylene vinylene-based light emitting material include poly (paraphenylene vinylene) [PPV] derivatives, poly (2,5-dialkoxy-1,4-phenylene vinylene) [RO-PPV], poly (2- (2 '-Ethyl-hexoxy) -5-methoxy-1,4-phenylenevinylene) [MEH-PPV], poly (2- (dialkoxyphenyl) -1,4-phenylenevinylene) [ROPh-PPV] and the like. . Polyparaphenylene-based light emitting materials include polyparaphenylene [PPP] derivatives, poly (2,5-dialkoxy-1,4-phenylene) [RO-PPP], poly (2,5-dihexoxy-1,4). -Phenylene) and the like. Polythiophene-based light-emitting materials include polythiophene [PT] derivatives, poly (3-alkylthiophene) [PAT], poly (3-hexylthiophene) [PHT], poly (3-cyclohexylthiophene) [PCHT], poly (3 -Cyclohexyl-4-methylthiophene) [PCHMT], poly (3,4-dicyclohexylthiophene) [PDCHT], poly [3- (4-octylphenyl) -thiophene] [POP], poly [3- (4-octyl) Phenyl) -2,2bithiophene] [PTOPT] and the like. Examples of the polyfluorene-based luminescent material include polyfluorene [PF] derivatives, poly (9,9-dialkylfluorene) [PDAF], poly (9,9-dioctylfluorene) [PDOF], and the like.

  Note that when a hole-transporting polymer-based organic light-emitting material is sandwiched between an anode and a light-emitting polymer-based organic light-emitting material, hole injection properties from the anode can be improved. In general, an acceptor material dissolved in water is applied by spin coating or the like. In addition, since it is insoluble in an organic solvent, it can be stacked with the above-described light-emitting material. Examples of the hole-transporting polymer organic light emitting material include a mixture of PEDOT and camphor sulfonic acid (CSA) as an acceptor material, a mixture of polyaniline [PANI] and polystyrene sulfonic acid [PSS] as an acceptor material, and the like. .

  The light emitting layer can be configured to emit monochromatic or white light. In the case of using a white light emitting material, color display can be made possible by providing a filter (colored layer) that transmits light of a specific wavelength on the light emission side of the pixel.

To form a light emitting layer that emits white light, for example, Alq _3, Alq ₃ partially doped with Nile red that is a red light emitting pigment, p-EtTAZ, TPD (aromatic diamine) are sequentially stacked by a vapor deposition method Thus, white can be obtained. Moreover, when forming a light emitting layer by the apply | coating method using spin coating, after apply | coating, it is preferable to bake by vacuum heating. For example, a poly (ethylenedioxythiophene) / poly (styrenesulfonic acid) aqueous solution (PEDOT / PSS) that acts as a hole injection layer is applied and baked on the entire surface, and then a luminescent center dye (1, 1,4,4-tetraphenyl-1,3-butadiene (TPB), 4-dicyanomethylene-2-methyl-6- (p-dimethylamino-styryl) -4H-pyran (DCM1), Nile Red, Coumarin 6 Etc.) A doped polyvinyl carbazole (PVK) solution may be applied to the entire surface and fired.

  The light-emitting layer can be formed as a single layer, and an electron-transporting 1,3,4-oxadiazole derivative (PBD) may be dispersed in hole-transporting polyvinyl carbazole (PVK). Further, white light emission can be obtained by dispersing 30 wt% PBD as an electron transporting agent and dispersing an appropriate amount of four kinds of dyes (TPB, coumarin 6, DCM1, Nile red). In addition to the light-emitting element that can emit white light as shown here, a light-emitting element that can obtain red light emission, green light emission, or blue light emission can be manufactured by appropriately selecting the material of the light-emitting layer.

  Furthermore, a triplet excitation material containing a metal complex or the like may be used for the light emitting layer in addition to a singlet excitation light emitting material. For example, among red light emitting pixels, green light emitting pixels, and blue light emitting pixels, a red light emitting pixel having a relatively short luminance half time is formed of a triplet excitation light emitting material, and the like. Is formed of a singlet excitation light emitting material. The triplet excited luminescent material has a feature that the light emission efficiency is good, so that less power is required to obtain the same luminance. That is, when applied to a red pixel, the amount of current flowing through the light emitting element can be reduced, so that reliability can be improved. As a reduction in power consumption, a red light-emitting pixel and a green light-emitting pixel may be formed using a triplet excitation light-emitting material, and a blue light-emitting pixel may be formed using a singlet excitation light-emitting material. By forming a green light-emitting element having high human visibility with a triplet excited light-emitting material, power consumption can be further reduced.

  Examples of triplet excited luminescent materials include those using a metal complex as a dopant, and metal complexes having a third transition series element platinum as the central metal and metal complexes having iridium as the central metal are known. Yes. The triplet excited light-emitting material is not limited to these compounds, and a compound having the above structure and having an element belonging to group 8 to 10 in the periodic table as a central metal can also be used.

  The substances forming the layer containing the light-emitting substance listed above are examples, such as a hole injecting and transporting layer, a hole transporting layer, an electron injecting and transporting layer, an electron transporting layer, a light emitting layer, an electron blocking layer, and a hole blocking layer. A light-emitting element can be formed by appropriately stacking functional layers. Moreover, you may form the mixed layer or mixed junction which combined these each layer. The layer structure of the light-emitting layer can be changed, and instead of having a specific electron injection region or light-emitting region, it is possible to provide a modification with an electrode for this purpose or a dispersed light-emitting material. Can be permitted without departing from the spirit of the present invention.

  A light-emitting element formed using the above materials emits light by being forward-biased. A pixel of a display device formed using a light-emitting element can be driven by a simple matrix method or an active matrix method. In any case, each pixel emits light by applying a forward bias at a specific timing, but is in a non-light emitting state for a certain period. By applying a reverse bias during this non-light emitting time, the reliability of the light emitting element can be improved. The light emitting element has a degradation mode in which the light emission intensity decreases under a constant driving condition and a degradation mode in which the non-light emitting area is enlarged in the pixel and the luminance is apparently decreased. However, alternating current that applies a bias in the forward and reverse directions. By performing a typical drive, the progress of deterioration can be slowed, and the reliability of the light emitting device can be improved.

  Next, as illustrated in FIG. 30B, a sealant 2081 is formed and sealed with a sealing substrate 2082. After that, connection terminals (a connection terminal 2084 connected to the gate wiring and a connection terminal connected to the source wiring are connected to the ends of the gate wiring 2011 and the source wiring (not shown) through the anisotropic conductive layer 2083. Paste not shown.) Furthermore, it is preferable to seal the connection portion between each wiring and the connection terminal with a sealing resin 2085. With this structure, moisture from the cross section can be prevented from entering and deteriorating the light emitting element. Through the above steps, a light-emitting display panel can be formed.

  Through the above process, a light-emitting display panel can be manufactured. Note that a protection circuit for preventing electrostatic breakdown, typically a diode or the like, may be provided between the connection terminal and the source wiring (gate wiring) or in the pixel portion. In this case, electrostatic breakdown can be prevented by manufacturing the TFT in the same process as the above-described TFT and connecting the gate wiring of the pixel portion and the drain wiring or source wiring of the diode.

  Note that any of Embodiment Modes 2 to 10 can be applied to this example. Further, in the first and second embodiments, the liquid crystal display panel and the light-emitting display panel have been described as examples in the first and second embodiments. However, the present invention is not limited to this, and DMD (Digital Micromirror Device) may be used. The present invention can be appropriately applied to an active display panel such as a plasma display panel (PDP), a field emission display (FED), or an electrophoretic display device (electronic paper).

  A mode of a light-emitting element applicable in the above embodiment will be described with reference to FIGS.

  FIG. 36A illustrates an example in which the first pixel electrode 11 is formed using a light-transmitting oxide conductive material. The first pixel electrode 11 is formed using an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%. Yes. A layer 16 containing a light emitting material in which a hole injection layer or hole transport layer 41, a light emitting layer 42, an electron transport layer or an electron injection layer 43 are stacked is provided thereon. The second pixel electrode 17 is formed of a first electrode 33 containing an alkali metal or alkaline earth metal such as LiF or MgAg and a second electrode 34 formed of a metal material such as aluminum. A pixel having this structure can emit light from the first pixel electrode 11 as indicated by an arrow in the drawing.

  FIG. 36B shows an example in which light is emitted from the second pixel electrode 17, and the first pixel electrode 11 is made of a metal such as aluminum or titanium, or nitrogen having a concentration less than that of the stoichiometric composition with the metal. And a second electrode 32 formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%. A layer 16 containing a light emitting material in which a hole injection layer or hole transport layer 41, a light emitting layer 42, an electron transport layer or an electron injection layer 43 are stacked is provided thereon. The second pixel electrode 17 is formed of a third electrode 33 containing an alkali metal or alkaline earth metal such as LiF or CaF and a fourth electrode 34 formed of a metal material such as aluminum. By setting the thickness to 100 nm or less so that light can be transmitted, light can be emitted from the second pixel electrode 17.

  Note that in the light-emitting element having the structure of FIG. 36A or FIG. 36B, when light is emitted from both directions, that is, from the first pixel electrode and the second pixel electrode, the first pixel electrode 11 is used. In addition, a conductive film having a light-transmitting property and a high work function is used, and a conductive film having a light-transmitting property and a low work function is used for the second pixel electrode 17. Typically, the first pixel electrode 11 is formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%, and the second pixel electrode 17 is formed of LiF having a thickness of 100 nm or less. Alternatively, a third electrode 33 containing an alkali metal or alkaline earth metal such as CaF and a fourth electrode 34 formed of a metal material such as aluminum may be used.

  FIG. 36C illustrates an example in which light is emitted from the first pixel electrode 11, and the layer 16 containing a light-emitting substance is formed as an electron transport layer or an electron injection layer 43, a light emitting layer 42, a hole injection layer or a hole. The structure which laminated | stacked the order of the transport layer 41 is shown. The second pixel electrode 17 is a second electrode 32 formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic% from the layer 16 side containing a light emitting substance, a metal such as aluminum or titanium, or The first electrode 35 is formed of a metal material containing nitrogen at a concentration equal to or less than the stoichiometric composition ratio with the metal. The first pixel electrode 11 is formed of a third electrode 33 containing an alkali metal or alkaline earth metal such as LiF or CaF and a fourth electrode 34 formed of a metal material such as aluminum. By setting the thickness to 100 nm or less so that light can be transmitted, it is possible to emit light from the first pixel electrode 11.

  FIG. 36D shows an example in which light is emitted from the second pixel electrode 17, and the layer 16 containing a light-emitting substance is formed as an electron transport layer or an electron injection layer 43, a light emitting layer 42, a hole injection layer or a hole. The structure which laminated | stacked the order of the transport layer 41 is shown. The first pixel electrode 11 has the same structure as that in FIG. 35A, and is formed to have a thickness enough to reflect light emitted from the layer 16 containing a light-emitting substance. The second pixel electrode 17 is made of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%. In this structure, the hole injection layer or the hole transport layer 41 is formed by forming an inorganic metal oxide (typically molybdenum oxide or vanadium oxide) to form the second pixel electrode 17. As a result, the hole injection property is improved and the driving voltage can be lowered.

  Note that in the light-emitting element having the structure of FIG. 36C or FIG. 36D, when light is emitted in both directions, that is, from the first pixel electrode and the second pixel electrode, the first pixel electrode 11 is used. In addition, a conductive film having a light-transmitting property and a small work function is used, and a conductive film having a light-transmitting property and a large work function is used for the second pixel electrode 17. Typically, the first pixel electrode 11 is formed of a third electrode 33 containing an alkali metal or alkaline earth metal such as LiF or CaF having a thickness of 100 nm or less and a metal material such as aluminum. And the second pixel electrode 17 may be formed of an oxide conductive material containing silicon oxide at a concentration of 1 to 15 atomic%.

  A pixel circuit of the light-emitting display panel described in the above embodiment and an operation configuration thereof will be described with reference to FIGS. There are two types of operation configurations of the light-emitting display panel, in which a video signal input to a pixel is defined by a voltage and a current is defined by a current in a display device in which a video signal is digital. There are two types of video signals defined by voltage, one having a constant voltage applied to the light emitting element (CVCV) and one having a constant current applied to the light emitting element (CVCC). In addition, a video signal is defined by current, there are a constant voltage applied to the light emitting element (CCCV) and a constant current applied to the light emitting element (CCCC). In this embodiment, a pixel performing a CVCV operation will be described with reference to FIGS. In addition, a pixel that performs the CVCC operation will be described with reference to FIGS.

  In the pixel shown in FIGS. 37A and 37B, a signal line 3710 and a power supply line 3711 are arranged in the column direction, and a scanning line 3714 is arranged in the row direction. In addition, the pixel includes a switching TFT 3701, a driving TFT 3703, a capacitor element 3702, and a light emitting element 705.

  Note that the switching TFT 3701 and the driving TFT 3703 operate in a linear region when turned on. The driving TFT 3703 has a role of controlling whether or not a voltage is applied to the light emitting element 3705. Both TFTs preferably have the same conductivity type in terms of manufacturing process. In this embodiment, the TFTs are formed as n-channel TFTs. The driving TFT 3703 may be a depletion type TFT as well as an enhancement type. The ratio (W / L) of the channel width W to the channel length L (W / L) of the driving TFT 3703 is preferably 1 to 1000 depending on the mobility of the TFT. The larger the W / L, the better the electrical characteristics of the TFT.

  In the pixel shown in FIGS. 37A and 37B, a TFT 3701 controls input of a video signal to the pixel. When the TFT 3701 is turned on, a video signal is input into the pixel. Then, the voltage of the video signal is held in the capacitor 3702.

  In FIG. 37A, when the power supply line 3711 is Vss and the counter electrode of the light emitting element 3705 is Vdd, that is, in FIGS. 36C and 36D, the counter electrode of the light emitting element is an anode, and the driving TFT 3703 The electrode connected to is a cathode. In this case, luminance unevenness due to characteristic variations of the driving TFT 3703 can be suppressed.

  In FIG. 37A, when the power supply line 3711 is Vdd and the counter electrode of the light emitting element 3705 is Vss, that is, in FIGS. 36A and 36B, the counter electrode of the light emitting element is a cathode, and the driving TFT 3703 The electrode connected to is the anode. In this case, when a video signal having a voltage higher than Vdd is input to the signal line 3710, the voltage of the video signal is held in the capacitor 3702, and the driving TFT 3703 operates in a linear region. It is possible to improve.

  The pixel illustrated in FIG. 37B has the same pixel structure as that illustrated in FIG. 37A except that a TFT 3706 and a scanning line 3715 are added.

  The TFT 3706 is controlled to be turned on or off by a newly arranged scanning line 3715. When the TFT 3706 is turned on, the charge held in the capacitor 3702 is discharged, and the TFT 3703 is turned off. That is, the arrangement of the TFT 3706 can forcibly create a state in which no current flows through the light emitting element 3705. Therefore, the TFT 3706 can be called an erasing TFT. Therefore, the structure in FIG. 37B can improve the light emission duty ratio because the lighting period can be started simultaneously with or immediately after the start of the writing period without waiting for signal writing to all the pixels. Is possible.

  In the pixel having the above operation configuration, the current value of the light-emitting element 3705 can be determined by the driving TFT 3703 that operates in a linear region. With the above structure, variation in TFT characteristics can be suppressed, and luminance unevenness of a light-emitting element due to variation in TFT characteristics can be improved, so that a display device with improved image quality can be provided.

  Next, a pixel that performs the CVCC operation will be described with reference to FIGS. In the pixel illustrated in FIG. 37C, a power supply line 3712 and a current control TFT 3704 are provided in the pixel configuration illustrated in FIG.

  The pixel shown in FIG. 37E is different from the pixel shown in FIG. 37C except that the gate electrode of the driving TFT 3703 is connected to the power supply line 3712 arranged in the row direction. It is a configuration. That is, both pixels shown in FIGS. 37C and 37E show the same equivalent circuit diagram. However, in the case where the power supply line 3712 is arranged in the column direction (FIG. 37C) and in the case where the power supply line 3712 is arranged in the row direction (FIG. 37E), each power supply line has a different layer. It is formed of a conductive film. Here, attention is paid to the wiring to which the gate electrode of the driving TFT 3703 is connected, and FIGS. 37C and 37E are shown separately to show that the layers for producing these are different.

  Note that the switching TFT 3701 operates in a linear region, and the driving TFT 3703 operates in a saturation region. The driving TFT 3703 has a role of controlling a current value flowing through the light emitting element 3705, and the TFT 3704 has a role of operating in a saturation region and controlling supply of current to the light emitting element 3705.

  The pixels shown in FIGS. 37D and 37F are the same as those shown in FIGS. 37C and 37E, respectively, except that an erasing TFT 3706 and a scanning line 3715 are added. The pixel configuration is the same as that shown in E).

  Note that the CVCC operation can be performed also in the pixels shown in FIGS. 37A and 37B. In addition, in the pixel having the operation configuration shown in FIGS. 37C to 37F, Vdd and Vss are appropriately changed depending on the direction of current flow of the light-emitting element, as in FIGS. 37A and 37B. Is possible.

  In the pixel having the above structure, since the TFT 3704 operates in a linear region, a slight change in Vgs of the TFT 3704 does not affect the current value of the light emitting element 3705. That is, the current value of the light emitting element 3705 can be determined by the driving TFT 3703 operating in the saturation region. With the above structure, it is possible to provide a display device in which luminance unevenness of a light-emitting element due to variation in TFT characteristics is improved and image quality is improved.

  In particular, in the case of forming a thin film transistor having an amorphous semiconductor or the like, it is preferable to increase the area of the semiconductor film of the driving TFT because the variation of the TFT can be reduced. Thus, the pixel shown in FIGS. 37A and 37B can increase the aperture ratio because the number of TFTs is small.

  Note that although a structure including the capacitor 3702 is shown, the present invention is not limited to this, and the capacitor 3702 is not provided in the case where the capacity for holding a video signal can be covered by a gate capacitor or the like. May be.

  Further, since a threshold value of a thin film transistor formed using an amorphous semiconductor film is easily shifted, a circuit for correcting the threshold value is preferably provided in or around the pixel.

  Such an active matrix light-emitting device is considered to be advantageous because it can be driven at a low voltage because a TFT is provided in each pixel when the pixel density is increased. On the other hand, a passive matrix light-emitting device in which a TFT is provided for each column can be formed. A passive matrix light-emitting device has a high aperture ratio because a TFT is not provided for each pixel.

  In the display device of the present invention, the screen display driving method is not particularly limited. For example, a dot sequential driving method, a line sequential driving method, a surface sequential driving method, or the like may be used. Typically, a line sequential driving method is used, and a time-division gray scale driving method or an area gray scale driving method may be used as appropriate. The video signal input to the source line of the display device may be an analog signal or a digital signal, and a drive circuit or the like may be designed in accordance with the video signal as appropriate.

  As described above, various pixel circuits can be employed.

  In this embodiment, mounting of a driver circuit (a signal line driver circuit 1402 and scan line driver circuits 1403a and 1403b) on the display panel described in the above embodiment will be described with reference to FIGS.

  As shown in FIG. 9A, a signal line driver circuit 1402 and scan line driver circuits 1403a and 1403b are mounted around the pixel portion 1401. In FIG. 9A, an IC chip 1405 is mounted on a substrate 1400 by a COG method as the signal line driver circuit 1402, the scan line driver circuits 1403a and 1403b, and the like. Then, an IC chip and an external circuit are connected via an FPC (flexible printed circuit) 1406.

  As shown in FIG. 9B, in the case where a TFT is formed using a SAS or a crystalline semiconductor, the pixel portion 1401 and the scan line driver circuits 1403a and 1403b are integrally formed over the substrate, and the signal line driver circuit 1402 and the like are formed. May be separately mounted as an IC chip. In FIG. 9B, an IC chip 1405 is mounted on a substrate 1400 as a signal line driver circuit 1402 by a COG method. Then, the IC chip and an external circuit are connected through the FPC 1406.

  Further, as shown in FIG. 9C, the signal line driver circuit 1402 and the like may be mounted by a TAB method instead of the COG method. Then, the IC chip and an external circuit are connected through the FPC 1406. In FIG. 9C, the signal line driver circuit is mounted by the TAB method, but the scan line driver circuit may be mounted by the TAB method.

  When the IC chip is mounted by the TAB method, a pixel portion can be provided larger than the substrate, and a narrow frame can be achieved.

  The IC chip is formed using a silicon wafer, but an IC (hereinafter referred to as a driver IC) in which an IC is formed on a glass substrate may be provided instead of the IC chip. Since an IC chip is taken out from a circular silicon wafer, the shape of the base substrate is limited. On the other hand, the driver IC has a mother substrate made of glass and has no restriction in shape, so that productivity can be improved. Therefore, the shape of the driver IC can be set freely. For example, when the length of the long side of the driver IC is 15 to 80 mm, the required number can be reduced as compared with the case where the IC chip is mounted. As a result, the number of connection terminals can be reduced, and the manufacturing yield can be improved.

  The driver IC can be formed using a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiation with continuous wave laser light. A semiconductor film obtained by irradiation with continuous wave laser light has few crystal defects and large crystal grains. As a result, a transistor having such a semiconductor film has favorable mobility and response speed, can be driven at high speed, and is suitable for a driver IC.

  In this embodiment, a mounting method of the driver circuit (the signal line driver circuit 1402 and the scan line driver circuits 1403a and 1403b) on the display panel described in the above embodiment is described with reference to FIGS. As a mounting method, a connection method using an anisotropic conductive material, a wire bonding method, or the like may be employed, and an example thereof will be described with reference to FIG. Note that in this embodiment, an example in which a driver IC is used for the signal line driver circuit 1402 and the scanning line driver circuits 1403a and 1403b is shown. An IC chip can be appropriately used instead of the driver IC.

  FIG. 10A shows an example in which a driver IC 1703 is mounted on an active matrix substrate 1701 using an anisotropic conductive material. On the active matrix substrate 1701, wirings (not shown) such as source wirings and gate wirings and electrode pads 1702a and 1702b which are extraction electrodes of the wirings are formed.

  Connection terminals 1704a and 1704b are provided on the surface of the driver IC 1703, and a protective insulating film 1705 is formed in the periphery thereof.

  A driver IC 1703 is fixed on the active matrix substrate 1701 with an anisotropic conductive adhesive 1706, and the connection terminals 1704a and 1704b and the electrode pads 1702a and 1702b are electrically conductive in the anisotropic conductive adhesive, respectively. They are electrically connected by a particle 1707. An anisotropic conductive adhesive is an adhesive resin in which conductive particles (particle size of about 3 to 7 μm) are dispersed and contained, and examples thereof include an epoxy resin and a phenol resin. In addition, the conductive particles (having a particle size of about several to several hundreds of μm) are formed of one element selected from gold, silver, copper, palladium, or platinum, or alloy particles of a plurality of elements. Moreover, the particle | grains which have the multilayer structure of these elements may be sufficient. Furthermore, the particle | grains by which the resin particle was coated with one element selected from gold, silver, copper, palladium, or platinum, or an alloy of a plurality of elements may be used.

  Moreover, you may transfer and use the anisotropic conductive film formed in the film form on the base film instead of an anisotropic conductive adhesive. In the anisotropic conductive film, conductive particles similar to the anisotropic conductive adhesive are dispersed. By making the size and density of the conductive particles 1707 mixed in the anisotropic conductive adhesive 1706 suitable, the driver IC can be mounted on the active matrix substrate in such a form. This mounting method is suitable for the mounting method of the driver IC shown in FIGS. 9A and 9B.

  FIG. 10B shows an example of a mounting method using the shrinkage force of an organic resin. Buffer layers 1711a and 1711b are formed of Ta or Ti on the connection terminal surface of the driver IC, and an electroless plating method or the like is formed thereon. As a result, Au is formed to about 20 μm to form bumps 1712a and 1712b. A photo-curable insulating resin 1713 is interposed between the driver IC and the active matrix substrate, and the electrodes can be mounted by pressure contact using the shrinkage force of the resin that is hardened by photo-curing. This mounting method is suitable for the mounting method of the driver IC shown in FIGS. 9A and 9B.

  Further, as shown in FIG. 10C, a driver IC 1703 is fixed to an active matrix substrate 1701 with an adhesive 1721, and the connection terminals of the CPU and the electrode pads 1702a and 1702b on the wiring board are connected by wires 1722a and 1722b. You may do it. Then, it is sealed with an organic resin 1723. This mounting method is suitable for the mounting method of the driver IC shown in FIGS. 9A and 9B.

  As shown in FIG. 10D, a driver IC 1703 may be provided through a wiring 1732 over an FPC (Flexible Printed Circuit) 1731 and an anisotropic conductive adhesive 1706 containing conductive particles 1707. This configuration is very effective when used for an electronic device with a limited housing size such as a portable terminal. This mounting method is suitable for the mounting method of the driver IC in FIG.

  The method for mounting the driver IC is not particularly limited, and a known COG method, wire bonding method, TAB method, or reflow processing using solder bumps can be used. When performing reflow processing, the substrate used for the driver IC or active matrix substrate is a plastic with high heat resistance, typically a polyimide substrate, an HT substrate (manufactured by Nippon Steel Chemical Co., Ltd.), norbornene with a polar group. It is preferable to use ARTON made of resin (manufactured by JSR) or the like.

  In the light-emitting display panel shown in Example 6, the semiconductor layer is formed of SAS, so that the driver circuit on the scanning line side is formed over the substrate 1400 as shown in FIGS. 9B and 9C. The drive circuit in this case will be described.

FIG. 14 shows a block diagram of a scanning line side driving circuit constituted by an n-channel TFT using SAS that can obtain a field effect mobility of 1 to 15 cm ² / V · sec.

  In FIG. 14, a block denoted by 1500 corresponds to a pulse output circuit that outputs a sampling pulse for one stage, and the shift register includes n pulse output circuits. A pixel is connected to the end of the buffer circuit 1501.

  FIG. 15 shows a specific configuration of the pulse output circuit 1500, and the n-channel TFTs 3601 to 3613 constitute the circuit. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 8 μm, the channel width can be set in the range of 10 to 80 μm.

  A specific structure of the buffer circuit 1501 is shown in FIG. Similarly, the buffer circuit includes n-channel TFTs 3620 to 3635. At this time, the size of the TFT may be determined in consideration of the operating characteristics of the n-channel TFT using SAS. For example, if the channel length is 10 μm, the channel width is set in the range of 10 to 1800 μm.

  In this embodiment, a display module will be described. Here, a liquid crystal module is shown as an example of a display module with reference to FIG.

  An active matrix substrate 1601 and a counter substrate 1602 are fixed to each other with a sealant 1600, and a pixel portion 1603 and a liquid crystal layer 1604 are provided therebetween to form a display region.

  The colored layer 1605 is necessary for color display. In the case of the RGB method, the colored layer 1605 is provided corresponding to the pixel in which a colored layer corresponding to each color of red, green, and blue is written. Polarizers 1606 and 1607 are disposed outside the active matrix substrate 1601 and the counter substrate 1602. In addition, a protective film 1616 is formed on the surface of the polarizing plate 1606 to reduce external impact.

  A wiring board 1610 is connected to a connection terminal 1608 provided on the active matrix substrate 1601 through an FPC 1609. A pixel driving circuit (IC chip, driver IC, or the like) 1611 is provided in the FPC or connection wiring, and an external circuit 1612 such as a control circuit or a power supply circuit is incorporated in the wiring substrate 1610.

  The cold cathode tube 1613, the reflecting plate 1614, and the optical film 1615 are backlight units, which serve as light sources and project light onto the liquid crystal display panel. A liquid crystal panel, a light source, a wiring board, an FPC, and the like are held and protected by a bezel 1617.

  Note that any of Embodiment Modes 1 to 9 can be applied to this example.

  In this embodiment, a cross-sectional view of a light-emitting display module is shown as an example of a display module with reference to FIG.

  FIG. 35A illustrates a cross section of a light-emitting display module in which an active matrix substrate 1201 and a counter substrate 1202 are fixed to each other with a sealant 1200, and a pixel portion 1203 is provided between them to display a display region. Forming.

  A space 1204 is formed between the counter substrate 1202 and the pixel portion 1203. The space can be filled with an inert gas such as nitrogen gas, or a light-transmitting resin having a highly water-absorbing material can be formed to further prevent moisture and oxygen from entering. Further, a resin having translucency and high water absorption may be formed. Even when light from the light-emitting element is emitted to the second substrate side with the light-transmitting resin, the resin can be formed without reducing transmittance.

  In order to increase the contrast, at least the pixel portion of the module may be provided with a polarizing plate or a circular polarizing plate (a polarizing plate, a 1 / 4λ plate and a 1 / 2λ plate). In the case where the display is recognized from the second substrate 1202 side, a ¼λ plate, a ½λ plate 1205, and a polarizing plate 1206 are preferably provided in order from the second substrate 1202. Further, an antireflection film may be provided on the polarizing plate.

  In the case where the display is recognized from both the second substrate 1202 and the active matrix substrate 1201, similarly, a 1 / 4λ plate, a 1 / 2λ plate, and a polarizing plate may be provided on the surface of the active matrix substrate.

  A wiring board 1210 is connected to a connection terminal 1208 provided on the active matrix substrate 1201 through an FPC 1209. A pixel driving circuit (IC chip, driver IC, etc.) 1211 is provided in the FPC or connection wiring, and an external circuit 1212 such as a control circuit or a power supply circuit is incorporated in the wiring substrate 1210.

  As shown in FIG. 35B, a colored layer 1207 can be provided between the pixel portion 1203 and the polarizing plate or between the pixel portion and the circularly polarizing plate. In this case, a full color display can be performed by providing a light emitting element capable of emitting white light in the pixel portion and separately providing a colored layer showing RGB. Further, full color display can be performed by providing a light emitting element capable of emitting blue light in the pixel portion and separately providing a color conversion layer or the like. In addition, each pixel portion, a light emitting element that emits red, green, and blue light can be formed, and a colored layer can be used. Such a display module has high color purity of each RBG and enables high-definition display.

  FIG. 35C shows a case where the active matrix substrate and the light-emitting element are sealed using a protective film 1221 such as a film or a resin without using the counter substrate, unlike FIG. A protective film 1221 is provided to cover the pixel electrode of the pixel portion 1203. As the protective film, an organic material such as an epoxy resin, a urethane resin, or a silicone resin can be used. The protective film may be formed by dropping a polymer material by a droplet discharge method. In this embodiment mode, the epoxy resin is discharged using a dispenser and dried. Further, a counter substrate may be provided over the protective film. Other structures are similar to those in FIG.

  When sealing is performed without using the counter substrate in this manner, the weight, size, and thickness of the display device can be improved.

  In the module of this embodiment, the wiring board 1210 is mounted using the FPC 1209, but the configuration is not necessarily limited thereto. The pixel drive circuit 1211 and the external circuit 1212 may be directly mounted on the substrate using a COG (Chip on Glass) method.

  Note that any of Embodiment Modes 1 to 9 can be applied to this example. Moreover, although the example of the liquid crystal display module and the light emission display module was shown as a display module, it is not restricted to this, DMD (Digital Micromirror Device; Digital micromirror device), PDP (Plasma Display Panel; Plasma display panel), The present invention can be appropriately applied to a display module such as a field emission display (FED) or an electrophoretic display device (electronic paper).

  In this embodiment, the desiccant for the display panel shown in the above embodiment will be described with reference to FIGS.

  FIG. 38A is a top view of the display panel, FIG. 38B is a cross-sectional view taken along line AB of FIG. 38A, and FIG. 38C is a CD line of FIG. FIG.

  As shown in FIG. 38A, the active matrix substrate 1800 and the counter substrate 1801 are sealed with a sealant 1802. A pixel region is provided between the first substrate and the second substrate. In the pixel region, a pixel 1807 is formed in a region where the source wiring 1805 and the gate wiring 1806 intersect. A desiccant 1804 is provided between the pixel region and the sealant 1802. In the pixel region, a desiccant 1814 is provided over the gate wiring or the source wiring. Although the desiccant 1814 is provided over the gate wiring here, it can be provided over the gate wiring and the source wiring.

  As the desiccant 1804, it is preferable to use a substance that adsorbs water (H 2 O) by chemical adsorption, such as an oxide of an alkaline earth metal such as calcium oxide (CaO) or barium oxide (BaO). However, the present invention is not limited to this, and a substance that adsorbs water by physical adsorption such as zeolite or silica gel may be used.

  Further, the desiccant can be fixed to the substrate in a state where the desiccant is contained as a granular substance in a highly moisture-permeable resin. Here, examples of highly moisture-permeable resins include acrylic resins such as ester acrylate, ether acrylate, ester urethane acrylate, ether urethane acrylate, butadiene urethane acrylate, special urethane acrylate, epoxy acrylate, amino resin acrylate, and acrylic resin acrylate. Can be used. In addition, bisphenol A type liquid resin, bisphenol A type solid resin, bromine-containing epoxy resin, bisphenol F type resin, bisphenol AD type resin, phenol type resin, cresol type resin, novolac type resin, cyclic aliphatic epoxy resin, epibis type Epoxy resins such as epoxy resins, glycidyl ester resins, glycidyl amine resins, heterocyclic epoxy resins, and modified epoxy resins can be used. Further, other substances may be used. Further, for example, an inorganic material such as siloxane may be used.

  Furthermore, as the substance having water absorption, a material obtained by solidifying a solution in which molecules capable of adsorbing water by chemical adsorption are mixed in an organic solvent can be used.

  Note that as the above-described highly permeable resin or inorganic substance, it is preferable to select a substance having a higher moisture permeability than a substance used as a sealing material.

  In the light emitting device of the present invention as described above, water mixed into the light emitting device from the outside can be absorbed before reaching the region where the light emitting element is formed. As a result, deterioration of an element provided in the pixel due to water, typically a light emitting element, can be suppressed.

  As shown in FIG. 38B, the desiccant 1804 is provided between the sealant 1802 and the pixel region 1803 in the periphery of the display panel. Further, by providing a recess in the counter substrate or the active matrix substrate and providing a desiccant 1804 there, the display panel can be thinned.

  As shown in FIG. 38C, in the pixel 1807, a semiconductor region 1811 which is part of a semiconductor element that drives the display element, a gate wiring 1806, a source wiring 1805, and a pixel electrode 1812 are formed. . In the pixel portion of the display panel, the desiccant 1804 is provided in a region overlapping with the gate wiring 1806 in the counter substrate. Since the width of the gate wiring is 2 to 4 times that of the source wiring, by providing the desiccant 1814 over the gate wiring 1806 which is a non-display region, the aperture ratio is not lowered and the display element can be formed. Intrusion of moisture and deterioration resulting therefrom can be suppressed. In addition, the display panel can be thinned by providing a recess in the counter substrate and providing a desiccant there.

  According to the present invention, a circuit in which a semiconductor element with a fine structure is highly integrated, typically a signal line driver circuit, a controller, a CPU, a converter for a sound processing circuit, a power supply circuit, a transmission / reception circuit, a memory, an amplifier for a sound processing circuit, etc. The semiconductor device can be formed. In addition, a system-on-chip that is monolithically equipped with circuits that constitute a single system (functional circuit) such as an MPU (microcomputer), memory, and I / O interface, enabling high speed, high reliability, and low power consumption. Can be formed.

  Various electronic devices can be manufactured by incorporating the semiconductor device described in any of the above embodiments into a housing. Electronic devices include television devices, cameras such as video cameras and digital cameras, goggles type displays (head mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook personal computers, game machines, Play back a recording medium such as a portable information terminal (mobile computer, mobile phone, portable game machine or electronic book), an image playback device (specifically, Digital Versatile Disc (DVD)) equipped with a recording medium, A device having a display capable of displaying). Here, as representative examples of these electronic devices, a television device and its block diagram are shown in FIGS. 11 and 12, respectively, and a digital camera is shown in FIG.

  FIG. 11 is a diagram illustrating a general configuration of a television apparatus that receives an analog television broadcast. In FIG. 11, radio waves for television broadcasting received by the antenna 1101 are input to the tuner 1102. The tuner 1102 generates and outputs an intermediate frequency (IF) signal by mixing the high-frequency television signal input from the antenna 1101 with a signal having a local oscillation frequency controlled according to the desired reception frequency.

  The IF signal extracted by the tuner 1102 is amplified to a necessary voltage by an intermediate frequency amplifier (IF amplifier) 1103, and then detected by the image detection circuit 1104 and detected by the audio detection circuit 1105. The video signal output from the video detection circuit 1104 is separated into a luminance signal and a color signal by the video processing circuit 1106 and further subjected to predetermined video signal processing to become a video signal, which is the semiconductor device of the present invention. Display devices, typically liquid crystal display devices, light-emitting display devices, DMDs (Digital Micromirror Devices), PDPs (Plasma Display Panels), FEDs (Field Emission Displays), electric emissions displays The image is output to an image output unit 1108 such as an electrophoretic display device (electronic paper). A display device using a liquid crystal display device is a liquid crystal television, and a display device using a light emitting display device is an EL television. The same applies when other display devices are used.

  The signal output from the sound detection circuit 1105 is subjected to processing such as FM demodulation by the sound system processing circuit 1107 to become a sound signal, is appropriately amplified, and is output to the sound system output unit 1109 such as a speaker.

  Note that the television apparatus using the present invention is not limited to a terrestrial broadcast such as a VHF band or a UHF band, a cable broadcast, or an analog broadcast such as a BS broadcast, but also a terrestrial digital broadcast, a cable digital broadcast, Or it may correspond to BS digital broadcasting.

  FIG. 12 is a perspective view of the television device as viewed from the front, and includes a housing 1151, a display portion 1152, a speaker portion 1153, an operation portion 1154, a video input terminal 1155, and the like. Moreover, it has a structure as shown in FIG.

  The display unit 1152 is an example of the video system output unit 1108 in FIG. 11, and displays video here.

  The speaker unit 1153 is an example of the audio system output unit in FIG. 11, and outputs audio here.

  The operation unit 1154 is provided with a power switch, a volume switch, a channel selection switch, a tuner switch, a selection switch, and the like. By pressing the button, the power of the television apparatus is turned on / off, video selection, audio adjustment, And selecting a tuner. Although not shown, the above selection can also be performed by a remote controller type operation unit.

  The video input terminal 1155 is a terminal for inputting a video signal from the outside such as a VTR, a DVD, or a game machine to the television apparatus.

  In the case where the television device shown in this embodiment is a wall-mounted television device, a wall-hanging portion is provided on the back of the main body.

  By using the display device which is an example of the semiconductor device of the present invention for the display portion of the television device, the television device can be manufactured with low cost and high throughput and yield. In addition, by using the semiconductor device of the present invention for the CPU that controls the video detection circuit, the video processing circuit, the audio detection circuit, and the audio processing circuit of the television device, the television device is manufactured at low cost and with high throughput and yield. be able to. For this reason, it can be applied to various uses as a display medium having a particularly large area, such as a wall-mounted television device, an information display board in a railway station or airport, and an advertisement display board in a street.

  13A and 13B are diagrams illustrating an example of a digital camera. FIG. 13A is a perspective view seen from the front side of the digital camera, and FIG. 13B is a perspective view seen from the rear side. In FIG. 13A, the digital camera includes a relace button 1301, a main switch 1302, a finder window 1303, a flash 1304, a lens 1305, a mirror copper 1306, and a housing 1307.

  In FIG. 13B, a viewfinder eyepiece window 1311, a monitor 1312, and operation buttons 1313 are provided.

  When the relace button 1301 is pressed down to a half position, the focus adjustment mechanism and the exposure adjustment mechanism are operated, and when the button is pressed down to the lowest position, the shutter is opened.

  A main switch 1302 switches on / off the power of the digital camera when pressed or rotated.

  The viewfinder window 1303 is disposed on the front of the lens 1305 on the front surface of the digital camera, and is a device for confirming the shooting range and focus position from the viewfinder eyepiece window 1311 shown in FIG.

  The flash 1304 is arranged at the upper front of the digital camera, and emits auxiliary light simultaneously with the release button being pressed to open the shutter when the subject brightness is low.

  The lens 1305 is disposed in front of the digital camera. The lens includes a focusing lens, a zoom lens, and the like, and constitutes a photographing optical system together with a shutter and a diaphragm (not shown). In addition, an imaging element such as a CCD (Charge Coupled Device) is provided behind the lens.

  The mirror copper 1306 moves the lens position in order to focus the focusing lens, the zoom lens, and the like. The lens copper 1305 is moved forward to move the lens 1305 forward during photographing. In addition, when carrying, the lens 1305 is moved down to be compact. In this embodiment, the structure is such that the subject can be zoomed by extending the mirror copper. However, the present invention is not limited to this structure, and the configuration of the imaging optical system in the housing 1307 is not limited to this structure. It is also possible to use a digital camera that can perform zoom shooting without extending the camera.

  The viewfinder eyepiece window 1311 is provided on the upper rear surface of the digital camera, and is a window provided for eye contact when confirming a shooting range and a focus position.

  The operation buttons 1313 are various function buttons provided on the rear surface of the digital camera, and include a setup button, a menu button, a display button, a function button, a selection button, and the like.

  By using a display device which is an embodiment of the semiconductor device of the present invention for a monitor, a digital camera can be manufactured at low cost and with high throughput and yield. In addition, a CPU that performs operations related to various function buttons, main switches, and release buttons, a circuit that performs an automatic focus operation and an automatic focus adjustment operation, a strobe light emission drive control, and a CCD drive control. A timing control circuit, an imaging circuit that generates an image signal from a signal photoelectrically converted by an imaging element such as a CCD, an A / D conversion circuit that converts the image signal generated by the imaging circuit into a digital signal, and the image data to the memory By using the semiconductor device of the present invention for a CPU or the like that controls circuits such as a memory interface that performs writing and reading of image data, a digital camera can be manufactured at low cost and with high throughput and yield.

Sectional drawing explaining the preparation process of the film | membrane pattern which concerns on this invention. Sectional drawing explaining the preparation process of the film | membrane pattern which concerns on this invention. Sectional drawing explaining the preparation process of the film | membrane pattern which concerns on this invention. Sectional drawing explaining the preparation process of the film | membrane pattern which concerns on this invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. FIG. 6 is a top view illustrating a method for mounting a driver circuit of a display device according to the present invention. FIG. 6 is a cross-sectional view illustrating a method for mounting a driver circuit of a display device according to the present invention. FIG. 11 is a block diagram illustrating a structure of an electronic device. 10A and 10B each illustrate an example of an electronic device. 6A and 6B illustrate an example of an electronic device. FIG. 6 is a diagram showing a circuit configuration when a scanning line side driving circuit is formed of TFTs in the liquid crystal display panel according to the present invention. FIG. 6 is a diagram (shift register circuit) illustrating a circuit configuration in the case where a scanning line side driving circuit is formed using TFTs in a liquid crystal display panel according to the present invention. FIG. 4 is a diagram (buffer circuit) illustrating a circuit configuration when a scanning line side driving circuit is formed of TFTs in the liquid crystal display panel according to the present invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 2A and 2B illustrate a structure of a droplet discharge device that can be applied to the present invention. 4A and 4B illustrate a liquid crystal dropping method that can be applied to the present invention. FIG. 6 illustrates a structure of a liquid crystal display module according to the present invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. 8A to 8D are top views illustrating a manufacturing process of a semiconductor device according to the present invention. FIG. 6 illustrates a structure of a light-emitting display module according to the present invention. 4A and 4B each illustrate a mode of a light-emitting element that can be applied to the present invention. FIG. 10 is a cross-sectional view illustrating a structure of a pixel that can be used in the light-emitting display panel of the present invention. FIG. 14 is a cross-sectional view illustrating a structure of a light-emitting display panel of the present invention. The schematic diagram explaining the laser direct drawing apparatus which concerns on this invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. 8A and 8B are cross-sectional views illustrating a manufacturing process of a semiconductor device according to the invention. The figure explaining Snell's law. The figure which shows the simulation result of the intensity | strength reflectance of light.

Claims (39)

A first film pattern is formed on a substrate, a second film pattern having a light transmitting property and a curvature is formed on the surface of the first film pattern, and the second film pattern is irradiated with light. And condensing the light, irradiating the first film pattern with the condensed light to generate heat, modifying the second film pattern with the heat, and second film pattern Forming a third film pattern by removing a region not modified in the step, and etching the first film pattern using the third film pattern to form a fourth film pattern. Method for forming a film pattern. The method for forming a film pattern according to claim 1, wherein the second film pattern is formed of a thermosetting material.   A first film pattern is formed on a substrate, a second film pattern having a light transmitting property and a curvature is formed on the surface of the first film pattern, and the second film pattern is irradiated with light. Condensing the light, irradiating the first film pattern with the condensed light to generate heat, modifying the second film pattern with the heat, and modifying the modified region Forming a third film pattern, and etching the first film pattern using the third film pattern to form a fourth film pattern. . 4. The method for forming a film pattern according to claim 3, wherein the second film pattern is formed of a thermoplastic material. A first film pattern is formed on the substrate, a second film pattern having translucency and curvature is formed on the substrate surface, and a third film pattern is formed on the first film pattern. Then, the second film pattern is irradiated with light to collect the light, the condensed light is applied to the first film pattern to generate heat, and the heat generates the third film pattern. A film pattern is modified, a region that is not modified in the third film pattern is removed to form a fourth film pattern, and the first film pattern is etched using the fourth film pattern. A method for forming a film pattern, comprising forming a fifth film pattern. 6. The method of forming a film pattern according to claim 5, wherein the third film pattern is formed of a thermosetting material. A first film pattern is formed on the substrate, a second film pattern having translucency and curvature is formed on the substrate surface, and a third film pattern is formed on the first film pattern. Then, the second film pattern is irradiated with light to collect the light, the condensed light is applied to the first film pattern to generate heat, and the heat generates the third film pattern. Modifying the film pattern, removing the modified region in the third film pattern to form a fourth film pattern, and etching the first film pattern using the fourth film pattern And forming a fifth film pattern. 8. The method for forming a film pattern according to claim 7, wherein the third film pattern is formed of a thermoplastic material.     9. The method of forming a film pattern according to claim 1, wherein the first film pattern absorbs light. A first film pattern is formed on the substrate, a second film pattern is formed on the first film pattern, and a third film pattern is transparent and has a curvature on the surface of the second film pattern. Forming a film pattern; irradiating the third film pattern with light to collect the light; and irradiating the collected light to the second film pattern to form one of the second film patterns. A portion of the film is exposed, the third film pattern is removed, an unexposed region of the second film pattern is removed to form a fourth film pattern, and the first film pattern is used to form the first film pattern. And forming a fifth film pattern by etching the film pattern.   The method of forming a film pattern according to claim 10, wherein the second film pattern is formed of a negative photosensitive material.   A first film pattern is formed on the substrate, a second film pattern is formed on the first film pattern, and a third film pattern is transparent and has a curvature on the surface of the second film pattern. Forming a film pattern; irradiating the third film pattern with light to collect the light; and irradiating the collected light to the second film pattern to form one of the second film patterns. A portion of the film is exposed, the third film pattern is removed, an exposed region of the second film pattern is removed to form a fourth film pattern, and the fourth film pattern is used to form the fourth film pattern. A method of forming a film pattern, comprising etching a film pattern of 1 to form a fifth film pattern.   13. The method of forming a film pattern according to claim 12, wherein the second film pattern is formed of a positive photosensitive material.   The method for forming a film pattern according to claim 10, wherein the second film pattern absorbs light.   15. The method for forming a film pattern according to claim 10, wherein a width of the fourth film pattern or the fifth film pattern is 0.1 μm to 10 μm.   16. The method for forming a film pattern according to claim 10, wherein the light is light emitted from a lamp.   16. The method for forming a film pattern according to claim 10, wherein the light is light emitted from a laser oscillator.   A conductive film that absorbs light is formed on a substrate, a first film pattern having a light-transmitting property and a curvature is formed on the surface of the conductive film, and light is applied to the first film pattern. Condensing the light, irradiating the conductive film with the collected light to generate heat, modifying the first film pattern with the heat, and modifying the first film pattern. Forming a second film pattern by removing an unpolished region, etching the conductive film using the second film pattern to form a gate electrode, and forming a gate insulating film, a semiconductor region on the gate electrode, A method for manufacturing a semiconductor device, wherein a source electrode and a drain electrode are formed.   A semiconductor region and a gate insulating film are formed on a substrate, a conductive film that absorbs light is formed on the gate insulating film, and a light-transmitting and curved first film pattern is formed on the conductive film surface. The first film pattern is irradiated with light to collect the light, and the condensed light is used to irradiate the conductive film to generate heat, and the heat generates the first film pattern. A film pattern is modified, a region that is not modified in the first film pattern is removed to form a second film pattern, and the conductive film is etched using the second film pattern to form a gate electrode And forming a source electrode and a drain electrode connected to the semiconductor region.   20. The method for manufacturing a semiconductor device according to claim 18, wherein the first film pattern is formed of a thermosetting material.   A conductive film that absorbs light is formed on the substrate, a first film pattern having a light transmitting property and a curvature is formed on the surface of the substrate, and a second film pattern is formed on the surface of the conductive film. The first film pattern is irradiated with light to collect the light, and the collected light is used to irradiate the conductive film to generate heat, and the heat causes the second film pattern to be generated. Forming a third film pattern by removing a region that is not modified in the second film pattern, and etching the conductive film using the third film pattern to form a gate electrode. A method for manufacturing a semiconductor device, comprising forming a gate insulating film, a semiconductor region, a source electrode, and a drain electrode over the gate electrode.   22. The method for manufacturing a semiconductor device according to claim 21, wherein the second film pattern is formed of a thermosetting material.   23. The method for manufacturing a semiconductor device according to claim 18, wherein the width of the gate electrode is 0.1 μm to 10 μm.   A conductive film that absorbs light is formed on a substrate, a first film pattern having a light-transmitting property and a curvature is formed on the surface of the conductive film, and light is applied to the first film pattern. Condensing the light, irradiating the conductive film with the collected light to generate heat, modifying the first film pattern with the heat, and modifying the first film pattern. Forming a second film pattern by removing the patterned region, etching the conductive film using the second film pattern to form a source electrode and a drain electrode, and over the source electrode and the drain electrode A method for manufacturing a semiconductor device, comprising forming a semiconductor region, a gate insulating film, and a gate electrode.   25. The method for manufacturing a semiconductor device according to claim 24, wherein the first film pattern is formed of a thermoplastic material.   A conductive film that absorbs light is formed on the substrate, a first film pattern having translucency and a curvature is formed on the substrate surface, and a second film pattern is formed on the conductive film. The first film pattern is irradiated with light to collect the light, and the collected light is used to irradiate the conductive film to generate heat, and the heat causes the second film pattern to be generated. The region modified in the second film pattern is removed to form a third film pattern, and the conductive film is etched using the third film pattern to form a source electrode and a drain A method for manufacturing a semiconductor device, comprising forming an electrode and forming a semiconductor region, a gate insulating film, and a gate electrode over the source electrode and the drain electrode. 27. The method for forming a film pattern according to claim 26, wherein the second film pattern is formed of a thermoplastic material.   28. The method for manufacturing a semiconductor device according to claim 24, wherein a distance between the source electrode and the drain electrode is 0.1 μm to 10 μm.   A conductive film that absorbs light is formed on a substrate, a photosensitive material is applied to the surface of the conductive film, and a first film pattern that is transparent and has a curvature is formed on the surface of the photosensitive material. And irradiating the first film pattern with light to collect the light, exposing the portion of the photosensitive material using the collected light, and removing the first film pattern. Removing a non-exposed region of the photosensitive material to form a second film pattern, etching the conductive film using the second film pattern to form a gate electrode, and forming a gate on the gate electrode A method for manufacturing a semiconductor device, comprising forming an insulating film, a semiconductor region, a source electrode, and a drain electrode.   A semiconductor region and a gate insulating film are formed on a substrate, a conductive film that absorbs light is formed on the gate insulating film, a photosensitive material is applied on the conductive film, and a transparent material is formed on the surface of the photosensitive material. Forming a first film pattern having a light property and a curvature; irradiating the first film pattern with light; condensing the light; and using the collected light, the photosensitive material A portion of the photosensitive material is removed, the first film pattern is removed, an unexposed region of the photosensitive material is removed to form a second film pattern, and the conductive film is formed using the second film pattern. A gate electrode is formed by etching and a source electrode and a drain electrode connected to the semiconductor region are formed.   31. The method for manufacturing a semiconductor device according to claim 29, wherein the second film pattern is formed of a negative photosensitive material.   32. The method for manufacturing a semiconductor device according to claim 29, wherein the gate electrode has a width of 0.1 to 10 [mu] m.   A conductive film that absorbs light is formed on a substrate, a photosensitive material is applied to the surface of the conductive film, and a first film pattern that is transparent and has a curvature is formed on the surface of the photosensitive material. And irradiating the first film pattern with light to collect the light, exposing the portion of the photosensitive material using the collected light, and removing the first film pattern. The exposed region of the photosensitive material is removed to form a second film pattern, the conductive film is etched using the second film pattern to form a source electrode and a drain electrode, and the source A method for manufacturing a semiconductor device, comprising forming a gate insulating film, a semiconductor region, and a gate electrode over a region and a drain region.   34. The method for manufacturing a semiconductor device according to claim 33, wherein the second film pattern is formed of a positive photosensitive material.   35. The method for manufacturing a semiconductor device according to claim 33, wherein a distance between the source electrode and the drain electrode is 0.1 μm to 10 μm.   36. The method for manufacturing a semiconductor device according to any one of claims 18 to 35, wherein the light is light emitted from a lamp.   36. The method for manufacturing a semiconductor device according to any one of claims 18 to 35, wherein the light is light emitted from a laser oscillator. 38. A liquid crystal television comprising the semiconductor device manufactured according to any one of claims 18 to 37. An EL television comprising the semiconductor device manufactured according to any one of claims 18 to 37.

Images