KR101121937B1 - 웨이퍼 처리를 위한 챔버 및 관련 방법 - Google Patents

웨이퍼 처리를 위한 챔버 및 관련 방법 Download PDF

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Publication number
KR101121937B1
KR101121937B1 KR1020117002990A KR20117002990A KR101121937B1 KR 101121937 B1 KR101121937 B1 KR 101121937B1 KR 1020117002990 A KR1020117002990 A KR 1020117002990A KR 20117002990 A KR20117002990 A KR 20117002990A KR 101121937 B1 KR101121937 B1 KR 101121937B1
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KR
South Korea
Prior art keywords
wafer
volume
chamber
fluid
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117002990A
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English (en)
Korean (ko)
Other versions
KR20110028540A (ko
Inventor
존 파크스
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/404,502 external-priority patent/US7153388B2/en
Priority claimed from US10/404,402 external-priority patent/US7357115B2/en
Priority claimed from US10/404,472 external-priority patent/US7392815B2/en
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20110028540A publication Critical patent/KR20110028540A/ko
Application granted granted Critical
Publication of KR101121937B1 publication Critical patent/KR101121937B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020117002990A 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법 Expired - Fee Related KR101121937B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US10/404,502 2003-03-31
US10/404,502 US7153388B2 (en) 2003-03-31 2003-03-31 Chamber for high-pressure wafer processing and method for making the same
US10/404,402 2003-03-31
US10/404,402 US7357115B2 (en) 2003-03-31 2003-03-31 Wafer clamping apparatus and method for operating the same
US10/404,472 US7392815B2 (en) 2003-03-31 2003-03-31 Chamber for wafer cleaning and method for making the same
US10/404,472 2003-03-31
PCT/US2004/008994 WO2004093166A2 (en) 2003-03-31 2004-03-23 Chamber and associated methods for wafer processing

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020057018809A Division KR101071603B1 (ko) 2003-03-31 2005-09-30 웨이퍼 처리를 위한 챔버 및 관련 방법

Publications (2)

Publication Number Publication Date
KR20110028540A KR20110028540A (ko) 2011-03-18
KR101121937B1 true KR101121937B1 (ko) 2012-03-14

Family

ID=33303846

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020117002990A Expired - Fee Related KR101121937B1 (ko) 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법
KR1020117002991A Expired - Fee Related KR101121938B1 (ko) 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법
KR1020057018809A Expired - Fee Related KR101071603B1 (ko) 2003-03-31 2005-09-30 웨이퍼 처리를 위한 챔버 및 관련 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020117002991A Expired - Fee Related KR101121938B1 (ko) 2003-03-31 2004-03-23 웨이퍼 처리를 위한 챔버 및 관련 방법
KR1020057018809A Expired - Fee Related KR101071603B1 (ko) 2003-03-31 2005-09-30 웨이퍼 처리를 위한 챔버 및 관련 방법

Country Status (7)

Country Link
EP (1) EP1609174B1 (https=)
JP (1) JP4560040B2 (https=)
KR (3) KR101121937B1 (https=)
AT (1) ATE535935T1 (https=)
MY (2) MY142891A (https=)
TW (1) TWI233147B (https=)
WO (1) WO2004093166A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8323420B2 (en) * 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
JP4692785B2 (ja) 2005-04-01 2011-06-01 エフエスアイ インターナショナル インコーポレイテッド 一つ又はそれ以上の処理流体を用いた、半導体ウエハー又は他のマイクロエレクトロニクス用の基板に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム
JP4861016B2 (ja) * 2006-01-23 2012-01-25 株式会社東芝 処理装置
KR101191337B1 (ko) * 2006-07-07 2012-10-16 에프에스아이 인터내쇼날 인크. 하나 이상의 처리 유체로 마이크로일렉트로닉 워크피스를 처리하는데 사용되는 장치용 배리어 구조물 및 노즐장치
JP5543336B2 (ja) 2007-05-18 2014-07-09 ブルックス オートメーション インコーポレイテッド 高速スワップロボット付コンパクト基板搬送システム
KR20130083940A (ko) 2008-05-09 2013-07-23 티이엘 에프에스아이, 인코포레이티드 개방 동작 모드와 폐쇄 동작 모드사이를 용이하게 변경하는 처리실 설계를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는 공구 및 방법
JP5655735B2 (ja) * 2011-07-26 2015-01-21 東京エレクトロン株式会社 処理装置、処理方法及び記憶媒体
KR102055712B1 (ko) 2015-10-04 2019-12-13 어플라이드 머티어리얼스, 인코포레이티드 감소된 용적의 처리 챔버
CN115527897A (zh) 2015-10-04 2022-12-27 应用材料公司 小热质量的加压腔室

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030037457A1 (en) * 2001-08-27 2003-02-27 Applied Materials, Inc. Particle removal apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2731950B2 (ja) 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
DE69130434T2 (de) 1990-06-29 1999-04-29 Canon K.K., Tokio/Tokyo Platte zum Arbeiten unter Vakuum
US5960555A (en) 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5803797A (en) * 1996-11-26 1998-09-08 Micron Technology, Inc. Method and apparatus to hold intergrated circuit chips onto a chuck and to simultaneously remove multiple intergrated circuit chips from a cutting chuck
US6032997A (en) * 1998-04-16 2000-03-07 Excimer Laser Systems Vacuum chuck
WO2000005750A1 (en) 1998-07-23 2000-02-03 Applied Materials, Inc. Improved substrate support member
US6279976B1 (en) 1999-05-13 2001-08-28 Micron Technology, Inc. Wafer handling device having conforming perimeter seal
JP4724353B2 (ja) * 2000-07-26 2011-07-13 東京エレクトロン株式会社 半導体基板のための高圧処理チャンバー
US6716084B2 (en) * 2001-01-11 2004-04-06 Nutool, Inc. Carrier head for holding a wafer and allowing processing on a front face thereof to occur
US20030047551A1 (en) * 2001-09-13 2003-03-13 Worm Steven Lee Guard heater and pressure chamber assembly including the same
JP3960462B2 (ja) * 2001-09-17 2007-08-15 大日本スクリーン製造株式会社 基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030037457A1 (en) * 2001-08-27 2003-02-27 Applied Materials, Inc. Particle removal apparatus

Also Published As

Publication number Publication date
JP4560040B2 (ja) 2010-10-13
KR20110028540A (ko) 2011-03-18
MY141406A (en) 2010-04-30
WO2004093166A3 (en) 2005-01-06
JP2007524990A (ja) 2007-08-30
TWI233147B (en) 2005-05-21
MY142891A (en) 2011-01-31
ATE535935T1 (de) 2011-12-15
TW200425243A (en) 2004-11-16
KR20050118226A (ko) 2005-12-15
KR101071603B1 (ko) 2011-10-10
EP1609174B1 (en) 2011-11-30
KR101121938B1 (ko) 2012-03-14
EP1609174A2 (en) 2005-12-28
WO2004093166A2 (en) 2004-10-28
KR20110028541A (ko) 2011-03-18

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