KR101113096B1 - 자기저항 메모리를 위한 기록 드라이버 - Google Patents

자기저항 메모리를 위한 기록 드라이버 Download PDF

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Publication number
KR101113096B1
KR101113096B1 KR1020067004467A KR20067004467A KR101113096B1 KR 101113096 B1 KR101113096 B1 KR 101113096B1 KR 1020067004467 A KR1020067004467 A KR 1020067004467A KR 20067004467 A KR20067004467 A KR 20067004467A KR 101113096 B1 KR101113096 B1 KR 101113096B1
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KR
South Korea
Prior art keywords
transistor
memory
current
coupled
circuit
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Expired - Lifetime
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KR1020067004467A
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English (en)
Korean (ko)
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KR20060088101A (ko
Inventor
조셉 제이. 나하스
토마스 더블유. 안드레
치트라 케이. 서브라매니안
핼버트 린
Original Assignee
에버스핀 테크놀러지스, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1695—Protection circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020067004467A 2003-09-05 2004-07-15 자기저항 메모리를 위한 기록 드라이버 Expired - Lifetime KR101113096B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/656,676 US6842365B1 (en) 2003-09-05 2003-09-05 Write driver for a magnetoresistive memory
US10/656,676 2003-09-05
PCT/US2004/022510 WO2005027135A1 (en) 2003-09-05 2004-07-15 Write driver for a magnetoresistive memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117023223A Division KR20110124350A (ko) 2003-09-05 2004-07-15 자기저항 메모리를 위한 기록 드라이버

Publications (2)

Publication Number Publication Date
KR20060088101A KR20060088101A (ko) 2006-08-03
KR101113096B1 true KR101113096B1 (ko) 2012-02-17

Family

ID=33553000

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117023223A Withdrawn KR20110124350A (ko) 2003-09-05 2004-07-15 자기저항 메모리를 위한 기록 드라이버
KR1020067004467A Expired - Lifetime KR101113096B1 (ko) 2003-09-05 2004-07-15 자기저항 메모리를 위한 기록 드라이버

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020117023223A Withdrawn KR20110124350A (ko) 2003-09-05 2004-07-15 자기저항 메모리를 위한 기록 드라이버

Country Status (7)

Country Link
US (1) US6842365B1 (enExample)
EP (1) EP1665277A4 (enExample)
JP (1) JP4554611B2 (enExample)
KR (2) KR20110124350A (enExample)
CN (1) CN100492527C (enExample)
TW (1) TWI348161B (enExample)
WO (1) WO2005027135A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956764B2 (en) * 2003-08-25 2005-10-18 Freescale Semiconductor, Inc. Method of writing to a multi-state magnetic random access memory cell
US7206223B1 (en) 2005-12-07 2007-04-17 Freescale Semiconductor, Inc. MRAM memory with residual write field reset
US7280388B2 (en) * 2005-12-07 2007-10-09 Nahas Joseph J MRAM with a write driver and method therefor
US7746686B2 (en) 2006-04-21 2010-06-29 Honeywell International Inc. Partitioned random access and read only memory
JP2010186559A (ja) * 2010-06-04 2010-08-26 Renesas Electronics Corp 薄膜磁性体記憶装置
KR102661099B1 (ko) 2018-11-08 2024-04-29 삼성전자주식회사 전송 소자를 포함하는 불휘발성 메모리 장치
CN111951848B (zh) * 2020-08-18 2023-09-01 上海交通大学 一种嵌入式动态随机存储器增益单元及其操作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1321944A1 (en) * 2001-12-21 2003-06-25 Kabushiki Kaisha Toshiba Magnetic random access memory

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4544878A (en) * 1983-10-04 1985-10-01 At&T Bell Laboratories Switched current mirror
US6693882B1 (en) 1999-01-26 2004-02-17 International Business Machines Corporation Frequency correction burst detection
US6343032B1 (en) * 1999-07-07 2002-01-29 Iowa State University Research Foundation, Inc. Non-volatile spin dependent tunnel junction circuit
US6188615B1 (en) * 1999-10-29 2001-02-13 Hewlett-Packard Company MRAM device including digital sense amplifiers
JP3800925B2 (ja) * 2000-05-15 2006-07-26 日本電気株式会社 磁気ランダムアクセスメモリ回路
JP4726290B2 (ja) * 2000-10-17 2011-07-20 ルネサスエレクトロニクス株式会社 半導体集積回路
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
JP4712204B2 (ja) * 2001-03-05 2011-06-29 ルネサスエレクトロニクス株式会社 記憶装置
US6574137B2 (en) * 2001-08-30 2003-06-03 Micron Technology, Inc. Single ended row select for a MRAM device
US6531723B1 (en) 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
JP2003151260A (ja) * 2001-11-13 2003-05-23 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6693824B2 (en) * 2002-06-28 2004-02-17 Motorola, Inc. Circuit and method of writing a toggle memory
US7221582B2 (en) * 2003-08-27 2007-05-22 Hewlett-Packard Development Company, L.P. Method and system for controlling write current in magnetic memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1321944A1 (en) * 2001-12-21 2003-06-25 Kabushiki Kaisha Toshiba Magnetic random access memory

Also Published As

Publication number Publication date
CN1846275A (zh) 2006-10-11
KR20060088101A (ko) 2006-08-03
TWI348161B (en) 2011-09-01
EP1665277A1 (en) 2006-06-07
US6842365B1 (en) 2005-01-11
JP4554611B2 (ja) 2010-09-29
EP1665277A4 (en) 2008-01-09
TW200527424A (en) 2005-08-16
WO2005027135A1 (en) 2005-03-24
CN100492527C (zh) 2009-05-27
KR20110124350A (ko) 2011-11-16
JP2007504592A (ja) 2007-03-01

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