KR101096969B1 - 촬상 소자 및 촬상 장치 - Google Patents

촬상 소자 및 촬상 장치 Download PDF

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Publication number
KR101096969B1
KR101096969B1 KR1020050022088A KR20050022088A KR101096969B1 KR 101096969 B1 KR101096969 B1 KR 101096969B1 KR 1020050022088 A KR1020050022088 A KR 1020050022088A KR 20050022088 A KR20050022088 A KR 20050022088A KR 101096969 B1 KR101096969 B1 KR 101096969B1
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South Korea
Prior art keywords
photoelectric conversion
conversion element
region
active region
pixel
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Expired - Fee Related
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KR1020050022088A
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English (en)
Korean (ko)
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KR20060043727A (ko
Inventor
구니히코 하라
히로시 구보
야스유키 엔도
마사토시 기무라
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
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Publication of KR20060043727A publication Critical patent/KR20060043727A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020050022088A 2004-03-18 2005-03-17 촬상 소자 및 촬상 장치 Expired - Fee Related KR101096969B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00078827 2004-03-18
JP2004078827A JP4553612B2 (ja) 2004-03-18 2004-03-18 撮像素子およびそれを備えた撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110073573A Division KR101166328B1 (ko) 2004-03-18 2011-07-25 촬상 장치

Publications (2)

Publication Number Publication Date
KR20060043727A KR20060043727A (ko) 2006-05-15
KR101096969B1 true KR101096969B1 (ko) 2011-12-20

Family

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Family Applications (2)

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KR1020050022088A Expired - Fee Related KR101096969B1 (ko) 2004-03-18 2005-03-17 촬상 소자 및 촬상 장치
KR1020110073573A Expired - Fee Related KR101166328B1 (ko) 2004-03-18 2011-07-25 촬상 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110073573A Expired - Fee Related KR101166328B1 (ko) 2004-03-18 2011-07-25 촬상 장치

Country Status (3)

Country Link
US (4) US7193258B2 (enExample)
JP (1) JP4553612B2 (enExample)
KR (2) KR101096969B1 (enExample)

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JP4553612B2 (ja) 2004-03-18 2010-09-29 ルネサスエレクトロニクス株式会社 撮像素子およびそれを備えた撮像装置
JP4455435B2 (ja) * 2004-08-04 2010-04-21 キヤノン株式会社 固体撮像装置及び同固体撮像装置を用いたカメラ
JP2006049611A (ja) * 2004-08-05 2006-02-16 Iwate Toshiba Electronics Co Ltd Ｃｍｏｓイメージセンサ
JP4971586B2 (ja) 2004-09-01 2012-07-11 キヤノン株式会社 固体撮像装置
JP2006108497A (ja) * 2004-10-07 2006-04-20 Matsushita Electric Ind Co Ltd 固体撮像装置
KR100598015B1 (ko) * 2005-02-07 2006-07-06 삼성전자주식회사 공유 구조 상보성 금속 산화막 반도체 액티브 픽셀 센서어레이의 레이 아웃
EP2249386B1 (en) * 2005-03-28 2012-10-10 Fujitsu Semiconductor Limited Imaging device
US7238926B2 (en) * 2005-06-01 2007-07-03 Eastman Kodak Company Shared amplifier pixel with matched coupling capacitances
US7342213B2 (en) * 2005-06-01 2008-03-11 Eastman Kodak Company CMOS APS shared amplifier pixel with symmetrical field effect transistor placement
KR100718781B1 (ko) * 2005-06-15 2007-05-16 매그나칩 반도체 유한회사 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서
KR100690912B1 (ko) * 2005-08-12 2007-03-09 삼성전자주식회사 전하 전송 특성이 향상된 4 공유 픽셀형 이미지 센서
KR100772892B1 (ko) 2006-01-13 2007-11-05 삼성전자주식회사 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서
KR100801758B1 (ko) * 2006-01-19 2008-02-11 엠텍비젼 주식회사 이미지 센서 및 그 제어 방법
KR20070093335A (ko) 2006-03-13 2007-09-18 마쯔시다덴기산교 가부시키가이샤 고체 촬상장치 및 그 구동방법
JP5132102B2 (ja) 2006-08-01 2013-01-30 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
KR100865111B1 (ko) 2006-12-22 2008-10-23 마루엘에스아이 주식회사 넓은 동작 범위의 ｃｍｏｓ형 이미지 센서용 화소 회로
US7964929B2 (en) * 2007-08-23 2011-06-21 Aptina Imaging Corporation Method and apparatus providing imager pixels with shared pixel components
JP2009059811A (ja) * 2007-08-30 2009-03-19 Sharp Corp 固体撮像装置および電子情報機器
JP5153378B2 (ja) 2008-02-15 2013-02-27 キヤノン株式会社 固体撮像装置及びその駆動方法
JP5408954B2 (ja) * 2008-10-17 2014-02-05 キヤノン株式会社 撮像装置、及び撮像システム
TWI433307B (zh) * 2008-10-22 2014-04-01 Sony Corp 固態影像感測器、其驅動方法、成像裝置及電子器件
US8130302B2 (en) * 2008-11-07 2012-03-06 Aptina Imaging Corporation Methods and apparatus providing selective binning of pixel circuits
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP4553969B2 (ja) * 2009-03-02 2010-09-29 ルネサスエレクトロニクス株式会社 撮像装置
FR2948217B1 (fr) 2009-07-17 2011-11-11 Arjowiggins Security Element de securite a effet de parallaxe
FR2948216B1 (fr) 2009-07-17 2011-11-25 Arjowiggins Security Element de securite a effet de parallaxe
US20110205384A1 (en) * 2010-02-24 2011-08-25 Panavision Imaging, Llc Variable active image area image sensor
CN102158663B (zh) * 2011-04-15 2013-09-11 北京思比科微电子技术股份有限公司 Cmos图像传感器像素及其控制时序
JP6188281B2 (ja) * 2012-05-24 2017-08-30 キヤノン株式会社 光電変換装置
KR101967835B1 (ko) * 2012-05-31 2019-04-10 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 픽셀 어레이
JP6045250B2 (ja) * 2012-08-10 2016-12-14 オリンパス株式会社 固体撮像装置および撮像装置
JP5813047B2 (ja) * 2013-04-26 2015-11-17 キヤノン株式会社 撮像装置、および、撮像システム。
US9729809B2 (en) 2014-07-11 2017-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device or electronic device
JP2016111425A (ja) * 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 撮像装置
CN116648785A (zh) * 2020-12-25 2023-08-25 索尼半导体解决方案公司 固态成像装置

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JP2000232216A (ja) * 1998-12-31 2000-08-22 Eastman Kodak Co 配線されたフローティングディフュージョンと共通増幅器のあるアクティブピクセルセンサ

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JP3432051B2 (ja) * 1995-08-02 2003-07-28 キヤノン株式会社 光電変換装置
JP3548410B2 (ja) * 1997-12-25 2004-07-28 キヤノン株式会社 固体撮像装置および固体撮像装置の信号読み出し方法
JP3571909B2 (ja) * 1998-03-19 2004-09-29 キヤノン株式会社 固体撮像装置及びその製造方法
JP2001024948A (ja) 1999-07-08 2001-01-26 Canon Inc 固体撮像装置及びそれを用いた撮像システム
JP2002050752A (ja) 2000-08-01 2002-02-15 Canon Inc 光電変換装置およびこれを用いた撮像システム
JP4553612B2 (ja) 2004-03-18 2010-09-29 ルネサスエレクトロニクス株式会社 撮像素子およびそれを備えた撮像装置

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JP2000232216A (ja) * 1998-12-31 2000-08-22 Eastman Kodak Co 配線されたフローティングディフュージョンと共通増幅器のあるアクティブピクセルセンサ

Also Published As

Publication number Publication date
KR20060043727A (ko) 2006-05-15
US20110079707A1 (en) 2011-04-07
KR20110102849A (ko) 2011-09-19
US20050205902A1 (en) 2005-09-22
KR101166328B1 (ko) 2012-07-18
US20090179238A1 (en) 2009-07-16
US8106433B2 (en) 2012-01-31
JP4553612B2 (ja) 2010-09-29
JP2005268537A (ja) 2005-09-29
US7663168B2 (en) 2010-02-16
US7868365B2 (en) 2011-01-11
US20070108486A1 (en) 2007-05-17
US7193258B2 (en) 2007-03-20

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