KR101078050B1 - 양자점 제조 장치 및 양자점 제조 방법 - Google Patents

양자점 제조 장치 및 양자점 제조 방법 Download PDF

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Publication number
KR101078050B1
KR101078050B1 KR1020080105369A KR20080105369A KR101078050B1 KR 101078050 B1 KR101078050 B1 KR 101078050B1 KR 1020080105369 A KR1020080105369 A KR 1020080105369A KR 20080105369 A KR20080105369 A KR 20080105369A KR 101078050 B1 KR101078050 B1 KR 101078050B1
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KR
South Korea
Prior art keywords
quantum dot
heating
temperature
mixer
solution
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KR1020080105369A
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English (en)
Korean (ko)
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KR20100046508A (ko
Inventor
한창수
정소희
서원식
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한국기계연구원
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Priority to KR1020080105369A priority Critical patent/KR101078050B1/ko
Priority to TW098136353A priority patent/TWI460324B/zh
Priority to PCT/KR2009/006228 priority patent/WO2010050727A2/ko
Priority to EP09823807.4A priority patent/EP2351702B1/en
Priority to US13/126,053 priority patent/US8354090B2/en
Priority to CN2009801483497A priority patent/CN102232056B/zh
Publication of KR20100046508A publication Critical patent/KR20100046508A/ko
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Publication of KR101078050B1 publication Critical patent/KR101078050B1/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020080105369A 2008-10-27 2008-10-27 양자점 제조 장치 및 양자점 제조 방법 KR101078050B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020080105369A KR101078050B1 (ko) 2008-10-27 2008-10-27 양자점 제조 장치 및 양자점 제조 방법
TW098136353A TWI460324B (zh) 2008-10-27 2009-10-27 產生量子點之裝置及方法
PCT/KR2009/006228 WO2010050727A2 (ko) 2008-10-27 2009-10-27 양자점 제조 장치 및 양자점 제조 방법
EP09823807.4A EP2351702B1 (en) 2008-10-27 2009-10-27 Apparatus and method for manufacturing quantum dot
US13/126,053 US8354090B2 (en) 2008-10-27 2009-10-27 Apparatus and method for manufacturing quantum dot
CN2009801483497A CN102232056B (zh) 2008-10-27 2009-10-27 用于生成量子点的装置和方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080105369A KR101078050B1 (ko) 2008-10-27 2008-10-27 양자점 제조 장치 및 양자점 제조 방법

Publications (2)

Publication Number Publication Date
KR20100046508A KR20100046508A (ko) 2010-05-07
KR101078050B1 true KR101078050B1 (ko) 2011-10-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080105369A KR101078050B1 (ko) 2008-10-27 2008-10-27 양자점 제조 장치 및 양자점 제조 방법

Country Status (6)

Country Link
US (1) US8354090B2 (zh)
EP (1) EP2351702B1 (zh)
KR (1) KR101078050B1 (zh)
CN (1) CN102232056B (zh)
TW (1) TWI460324B (zh)
WO (1) WO2010050727A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160106810A (ko) * 2015-03-02 2016-09-13 한국생산기술연구원 양자점 합성 장치
KR20230076230A (ko) 2021-11-24 2023-05-31 페롤레드 주식회사 미세유체 하이브리드 반응기를 포함하는 페로브스카이트 나노결정 제조장치 및 이를 이용한 페로브스카이트 나노결정 제조방법

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* Cited by examiner, † Cited by third party
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KR101147840B1 (ko) * 2008-10-27 2012-05-21 한국기계연구원 복수의 가열 영역을 가지는 양자점 제조 장치 및 양자점 제조 방법
KR101078050B1 (ko) * 2008-10-27 2011-10-31 한국기계연구원 양자점 제조 장치 및 양자점 제조 방법
KR101498754B1 (ko) * 2011-03-04 2015-03-05 주식회사 나노스퀘어 코어-쉘 구조의 양자점 자동 제조 장치
KR101299713B1 (ko) * 2011-08-25 2013-08-26 한국기계연구원 양자점 제조 장치 및 그를 이용한 양자점 제조 방법
EP3028296A4 (en) 2013-07-31 2017-01-25 US Nano LLC Apparatus and methods for continuous flow synthesis of semiconductor nanowires
US10815424B2 (en) 2015-12-31 2020-10-27 Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. One-step process for synthesis of core shell nanocrystals
US10369538B2 (en) 2015-12-31 2019-08-06 Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. Flow system and process for photoluminescent nanoparticle production
CN106423005A (zh) * 2016-10-31 2017-02-22 华南理工大学 一种毛细力辅助驱动合成量子点的装置及其合成量子点的方法
CN106433636B (zh) * 2016-11-11 2019-04-09 华南理工大学 一种基于微通道离子泵的一体化量子点合成方法及装置
EP3604215A4 (en) * 2017-03-28 2020-02-26 Fujifilm Corporation GROUP (III) - (V) SEMICONDUCTOR NANOPARTICLE PRODUCTION METHOD, GROUP (III) - (V) SEMICONDUCTOR QUANTIC POINT PRODUCTION METHOD, AND FLOW REACTION SYSTEM
WO2018192539A1 (zh) * 2017-04-21 2018-10-25 东莞市睿泰涂布科技有限公司 量子点核合成装置及量子点核合成方法
WO2018192541A1 (zh) * 2017-04-21 2018-10-25 东莞市睿泰涂布科技有限公司 量子点前驱体合成装置及量子点前驱体合成方法
CN106916584B (zh) * 2017-04-21 2018-06-15 东莞市睿泰涂布科技有限公司 量子点合成装置及量子点合成方法
WO2018192540A1 (zh) * 2017-04-21 2018-10-25 东莞市睿泰涂布科技有限公司 量子点核壳合成装置及量子点核壳合成方法
TWI636120B (zh) * 2017-08-04 2018-09-21 奇美實業股份有限公司 量子點的製造方法、發光材料、發光元件以及顯示裝置
US20210390813A1 (en) * 2018-10-31 2021-12-16 Korea Institute Of Machinery & Materials Structural coloration substrate, method for manufacturing structural coloration substrate, and security verification system using structural coloration substrate manufactured thereby
KR102308148B1 (ko) 2018-12-27 2021-10-06 주식회사 오디텍 양자점 제조장치 및 이를 이용한 양자점 제조방법
CN109999739B (zh) * 2019-02-01 2021-04-02 天津大学 一种均匀混合的微流控反应合成材料装置
CN109941977B (zh) * 2019-04-22 2021-01-15 中国科学院化学研究所 一种硒化镉量子点的合成方法
CN112921436B (zh) * 2021-03-08 2023-04-07 南京鼓楼医院 一种包裹钙钛矿量子点的纤维、制备方法及装置
KR102562880B1 (ko) * 2021-03-18 2023-08-03 순천향대학교 산학협력단 양자점의 연속 대량 합성방법 및 이에 이용되는 양자점 연속 대량 합성장치

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JP4348451B2 (ja) 2005-07-06 2009-10-21 独立行政法人産業技術総合研究所 ナノ粒子製造方法、及びその装置
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KR100876258B1 (ko) 2007-01-25 2008-12-26 고려대학교 산학협력단 망간이 도핑된 카드뮴셀레나이드 양자점의 제조방법
CN201120278Y (zh) * 2007-11-07 2008-09-24 华东理工大学 一种连续合成无机纳米晶的微反应装置
CN100557091C (zh) * 2007-11-07 2009-11-04 华东理工大学 一种利用温度梯度合成硒化镉纳米晶的微反应装置与方法
KR101078050B1 (ko) * 2008-10-27 2011-10-31 한국기계연구원 양자점 제조 장치 및 양자점 제조 방법

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Hongwei Yang et al., Synthesis of nanocrystals via microreaction with temperature gradient: towards separation of nucleation and growth, Lab Chip, March 2008, Vol. 8, pp. 451-455*
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160106810A (ko) * 2015-03-02 2016-09-13 한국생산기술연구원 양자점 합성 장치
KR101663275B1 (ko) * 2015-03-02 2016-10-10 한국생산기술연구원 양자점 합성 장치
KR20230076230A (ko) 2021-11-24 2023-05-31 페롤레드 주식회사 미세유체 하이브리드 반응기를 포함하는 페로브스카이트 나노결정 제조장치 및 이를 이용한 페로브스카이트 나노결정 제조방법

Also Published As

Publication number Publication date
WO2010050727A3 (ko) 2010-07-29
TW201028504A (en) 2010-08-01
CN102232056A (zh) 2011-11-02
US8354090B2 (en) 2013-01-15
EP2351702A4 (en) 2013-05-22
TWI460324B (zh) 2014-11-11
CN102232056B (zh) 2013-12-25
KR20100046508A (ko) 2010-05-07
EP2351702B1 (en) 2018-02-21
US20110223097A1 (en) 2011-09-15
WO2010050727A2 (ko) 2010-05-06
EP2351702A2 (en) 2011-08-03

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