CN102232056B - 用于生成量子点的装置和方法 - Google Patents
用于生成量子点的装置和方法 Download PDFInfo
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- CN102232056B CN102232056B CN2009801483497A CN200980148349A CN102232056B CN 102232056 B CN102232056 B CN 102232056B CN 2009801483497 A CN2009801483497 A CN 2009801483497A CN 200980148349 A CN200980148349 A CN 200980148349A CN 102232056 B CN102232056 B CN 102232056B
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- 238000000034 method Methods 0.000 title claims description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 124
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- 239000011669 selenium Substances 0.000 description 14
- 229910052711 selenium Inorganic materials 0.000 description 14
- NLAGNNORBYGNAV-UHFFFAOYSA-N 2-methylnonacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(C)C NLAGNNORBYGNAV-UHFFFAOYSA-N 0.000 description 8
- 229910052793 cadmium Inorganic materials 0.000 description 8
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- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0105369 | 2008-10-27 | ||
KR1020080105369A KR101078050B1 (ko) | 2008-10-27 | 2008-10-27 | 양자점 제조 장치 및 양자점 제조 방법 |
PCT/KR2009/006228 WO2010050727A2 (ko) | 2008-10-27 | 2009-10-27 | 양자점 제조 장치 및 양자점 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102232056A CN102232056A (zh) | 2011-11-02 |
CN102232056B true CN102232056B (zh) | 2013-12-25 |
Family
ID=42129448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801483497A Expired - Fee Related CN102232056B (zh) | 2008-10-27 | 2009-10-27 | 用于生成量子点的装置和方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8354090B2 (zh) |
EP (1) | EP2351702B1 (zh) |
KR (1) | KR101078050B1 (zh) |
CN (1) | CN102232056B (zh) |
TW (1) | TWI460324B (zh) |
WO (1) | WO2010050727A2 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101147840B1 (ko) * | 2008-10-27 | 2012-05-21 | 한국기계연구원 | 복수의 가열 영역을 가지는 양자점 제조 장치 및 양자점 제조 방법 |
KR101078050B1 (ko) * | 2008-10-27 | 2011-10-31 | 한국기계연구원 | 양자점 제조 장치 및 양자점 제조 방법 |
KR101498754B1 (ko) * | 2011-03-04 | 2015-03-05 | 주식회사 나노스퀘어 | 코어-쉘 구조의 양자점 자동 제조 장치 |
KR101299713B1 (ko) * | 2011-08-25 | 2013-08-26 | 한국기계연구원 | 양자점 제조 장치 및 그를 이용한 양자점 제조 방법 |
EP3028296A4 (en) | 2013-07-31 | 2017-01-25 | US Nano LLC | Apparatus and methods for continuous flow synthesis of semiconductor nanowires |
KR101663275B1 (ko) * | 2015-03-02 | 2016-10-10 | 한국생산기술연구원 | 양자점 합성 장치 |
US10369538B2 (en) | 2015-12-31 | 2019-08-06 | Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. | Flow system and process for photoluminescent nanoparticle production |
US10815424B2 (en) | 2015-12-31 | 2020-10-27 | Kuantag Nanoteknolojiler Gelistirme Ve Uretim A.S. | One-step process for synthesis of core shell nanocrystals |
CN106423005A (zh) * | 2016-10-31 | 2017-02-22 | 华南理工大学 | 一种毛细力辅助驱动合成量子点的装置及其合成量子点的方法 |
CN106433636B (zh) * | 2016-11-11 | 2019-04-09 | 华南理工大学 | 一种基于微通道离子泵的一体化量子点合成方法及装置 |
EP3604215A4 (en) * | 2017-03-28 | 2020-02-26 | Fujifilm Corporation | GROUP (III) - (V) SEMICONDUCTOR NANOPARTICLE PRODUCTION METHOD, GROUP (III) - (V) SEMICONDUCTOR QUANTIC POINT PRODUCTION METHOD, AND FLOW REACTION SYSTEM |
CN106916584B (zh) * | 2017-04-21 | 2018-06-15 | 东莞市睿泰涂布科技有限公司 | 量子点合成装置及量子点合成方法 |
WO2018192541A1 (zh) * | 2017-04-21 | 2018-10-25 | 东莞市睿泰涂布科技有限公司 | 量子点前驱体合成装置及量子点前驱体合成方法 |
WO2018192539A1 (zh) * | 2017-04-21 | 2018-10-25 | 东莞市睿泰涂布科技有限公司 | 量子点核合成装置及量子点核合成方法 |
WO2018192540A1 (zh) * | 2017-04-21 | 2018-10-25 | 东莞市睿泰涂布科技有限公司 | 量子点核壳合成装置及量子点核壳合成方法 |
TWI636120B (zh) * | 2017-08-04 | 2018-09-21 | 奇美實業股份有限公司 | 量子點的製造方法、發光材料、發光元件以及顯示裝置 |
CN112969594B (zh) * | 2018-10-31 | 2023-03-24 | 韩国机械研究院 | 结构着色基板、制造结构着色基板的方法及使用由此制造的结构着色基板的安全验证系统 |
KR102308148B1 (ko) | 2018-12-27 | 2021-10-06 | 주식회사 오디텍 | 양자점 제조장치 및 이를 이용한 양자점 제조방법 |
CN109999739B (zh) * | 2019-02-01 | 2021-04-02 | 天津大学 | 一种均匀混合的微流控反应合成材料装置 |
CN109941977B (zh) * | 2019-04-22 | 2021-01-15 | 中国科学院化学研究所 | 一种硒化镉量子点的合成方法 |
CN112921436B (zh) * | 2021-03-08 | 2023-04-07 | 南京鼓楼医院 | 一种包裹钙钛矿量子点的纤维、制备方法及装置 |
KR102562880B1 (ko) * | 2021-03-18 | 2023-08-03 | 순천향대학교 산학협력단 | 양자점의 연속 대량 합성방법 및 이에 이용되는 양자점 연속 대량 합성장치 |
KR20230076230A (ko) | 2021-11-24 | 2023-05-31 | 페롤레드 주식회사 | 미세유체 하이브리드 반응기를 포함하는 페로브스카이트 나노결정 제조장치 및 이를 이용한 페로브스카이트 나노결정 제조방법 |
Citations (2)
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CN101235546A (zh) * | 2007-11-07 | 2008-08-06 | 华东理工大学 | 一种利用温度梯度合成硒化镉纳米晶的微反应装置与方法 |
CN201120278Y (zh) * | 2007-11-07 | 2008-09-24 | 华东理工大学 | 一种连续合成无机纳米晶的微反应装置 |
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US20020083888A1 (en) | 2000-12-28 | 2002-07-04 | Zehnder Donald A. | Flow synthesis of quantum dot nanocrystals |
US7229497B2 (en) * | 2003-08-26 | 2007-06-12 | Massachusetts Institute Of Technology | Method of preparing nanocrystals |
JP4348451B2 (ja) * | 2005-07-06 | 2009-10-21 | 独立行政法人産業技術総合研究所 | ナノ粒子製造方法、及びその装置 |
DE102006055218A1 (de) * | 2006-11-21 | 2008-05-29 | Bayer Technology Services Gmbh | Kontinuierliches Verfahren zur Synthese von nanoskaligen metallhaltigen Nanopartikel und Nanopartikeldispersion |
KR100876258B1 (ko) * | 2007-01-25 | 2008-12-26 | 고려대학교 산학협력단 | 망간이 도핑된 카드뮴셀레나이드 양자점의 제조방법 |
KR101078050B1 (ko) * | 2008-10-27 | 2011-10-31 | 한국기계연구원 | 양자점 제조 장치 및 양자점 제조 방법 |
-
2008
- 2008-10-27 KR KR1020080105369A patent/KR101078050B1/ko not_active IP Right Cessation
-
2009
- 2009-10-27 TW TW098136353A patent/TWI460324B/zh not_active IP Right Cessation
- 2009-10-27 WO PCT/KR2009/006228 patent/WO2010050727A2/ko active Application Filing
- 2009-10-27 CN CN2009801483497A patent/CN102232056B/zh not_active Expired - Fee Related
- 2009-10-27 EP EP09823807.4A patent/EP2351702B1/en not_active Not-in-force
- 2009-10-27 US US13/126,053 patent/US8354090B2/en not_active Expired - Fee Related
Patent Citations (2)
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CN101235546A (zh) * | 2007-11-07 | 2008-08-06 | 华东理工大学 | 一种利用温度梯度合成硒化镉纳米晶的微反应装置与方法 |
CN201120278Y (zh) * | 2007-11-07 | 2008-09-24 | 华东理工大学 | 一种连续合成无机纳米晶的微反应装置 |
Non-Patent Citations (4)
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Joshua B.Edel et al.Microfluidic routes to the controlled production of nanoparticles.《Chem.Commun》.2002, |
Microfluidic routes to the controlled production of nanoparticles;Joshua B.Edel et al;《Chem.Commun》;20020423;第1136页第2栏 * |
Synthesis of nanocrystals via microreaction with temperature gradient:towards separation of nucleation and growth;YANG,HONGWEI et al.;《Lab on a Chip》;20080115;452页 * |
YANG,HONGWEI et al..Synthesis of nanocrystals via microreaction with temperature gradient:towards separation of nucleation and growth.《Lab on a Chip》.2008, |
Also Published As
Publication number | Publication date |
---|---|
TWI460324B (zh) | 2014-11-11 |
KR101078050B1 (ko) | 2011-10-31 |
EP2351702A4 (en) | 2013-05-22 |
EP2351702A2 (en) | 2011-08-03 |
WO2010050727A2 (ko) | 2010-05-06 |
EP2351702B1 (en) | 2018-02-21 |
TW201028504A (en) | 2010-08-01 |
US8354090B2 (en) | 2013-01-15 |
US20110223097A1 (en) | 2011-09-15 |
WO2010050727A3 (ko) | 2010-07-29 |
KR20100046508A (ko) | 2010-05-07 |
CN102232056A (zh) | 2011-11-02 |
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