KR101073350B1 - 정전 척으로의 전압 인가 방법 - Google Patents

정전 척으로의 전압 인가 방법 Download PDF

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Publication number
KR101073350B1
KR101073350B1 KR1020090044113A KR20090044113A KR101073350B1 KR 101073350 B1 KR101073350 B1 KR 101073350B1 KR 1020090044113 A KR1020090044113 A KR 1020090044113A KR 20090044113 A KR20090044113 A KR 20090044113A KR 101073350 B1 KR101073350 B1 KR 101073350B1
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KR
South Korea
Prior art keywords
voltage
chuck
mounting table
delete delete
power supply
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KR1020090044113A
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English (en)
Korean (ko)
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KR20090121251A (ko
Inventor
아츠키 후루야
도시히로 도죠
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20090121251A publication Critical patent/KR20090121251A/ko
Application granted granted Critical
Publication of KR101073350B1 publication Critical patent/KR101073350B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020090044113A 2008-05-21 2009-05-20 정전 척으로의 전압 인가 방법 KR101073350B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2008-133686 2008-05-21
JP2008133686 2008-05-21
JPJP-P-2008-288646 2008-11-11
JP2008288646A JP5315942B2 (ja) 2008-05-21 2008-11-11 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020110032124A Division KR101189319B1 (ko) 2008-05-21 2011-04-07 탑재대 기구 및 플라즈마 처리 장치
KR1020110052135A Division KR101073765B1 (ko) 2008-05-21 2011-05-31 탑재대 기구 및 플라즈마 처리 장치

Publications (2)

Publication Number Publication Date
KR20090121251A KR20090121251A (ko) 2009-11-25
KR101073350B1 true KR101073350B1 (ko) 2011-10-14

Family

ID=41371986

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020090044113A KR101073350B1 (ko) 2008-05-21 2009-05-20 정전 척으로의 전압 인가 방법
KR1020110052135A KR101073765B1 (ko) 2008-05-21 2011-05-31 탑재대 기구 및 플라즈마 처리 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110052135A KR101073765B1 (ko) 2008-05-21 2011-05-31 탑재대 기구 및 플라즈마 처리 장치

Country Status (4)

Country Link
JP (2) JP5315942B2 (zh)
KR (2) KR101073350B1 (zh)
CN (2) CN101587813B (zh)
TW (1) TWI466226B (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5486383B2 (ja) * 2010-04-13 2014-05-07 富士フイルム株式会社 ドライエッチング方法及び装置
CN101925246B (zh) * 2010-08-13 2012-05-09 华中科技大学 一种人体可直接触摸的低温等离子体的产生方法
CN102545816B (zh) * 2010-12-17 2015-02-04 中微半导体设备(上海)有限公司 一种用于静电吸盘的多通道射频滤波器
JP5923245B2 (ja) * 2011-03-30 2016-05-24 東京エレクトロン株式会社 基板除去方法及び記憶媒体
CN103050364B (zh) * 2013-01-05 2016-04-06 中微半导体设备(上海)有限公司 用于加热等离子体处理腔室内基片温度的电路
JP6224958B2 (ja) * 2013-02-20 2017-11-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN104715988B (zh) * 2013-12-17 2017-05-24 中微半导体设备(上海)有限公司 等离子体处理装置及其基片直流偏置电压测量方法
JP6609664B2 (ja) * 2014-07-25 2019-11-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6357436B2 (ja) 2014-07-25 2018-07-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN104362116B (zh) * 2014-11-04 2017-06-27 合肥京东方光电科技有限公司 一种气悬浮式下部电极及干法刻蚀装置
JP6496579B2 (ja) * 2015-03-17 2019-04-03 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR102649333B1 (ko) * 2015-12-07 2024-03-18 어플라이드 머티어리얼스, 인코포레이티드 정전 척들을 사용하여 기판들을 클램핑 및 디클램핑하기 위한 방법 및 장치
KR101842124B1 (ko) 2016-05-27 2018-03-27 세메스 주식회사 지지 유닛, 기판 처리 장치 및 기판 처리 방법
KR102229983B1 (ko) * 2017-11-03 2021-03-19 주식회사 원익아이피에스 기판처리장치
JP7020311B2 (ja) * 2018-06-14 2022-02-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR20210076154A (ko) 2018-11-09 2021-06-23 어플라이드 머티어리얼스, 인코포레이티드 프로세싱 챔버를 위한 라디오 주파수 필터 시스템
KR102410815B1 (ko) * 2018-12-12 2022-06-21 주식회사 원익아이피에스 기판 처리 장치
JP7169920B2 (ja) * 2019-03-26 2022-11-11 東京エレクトロン株式会社 静電吸着装置及び除電方法
JP2020177785A (ja) * 2019-04-17 2020-10-29 日本電産株式会社 プラズマ処理装置
JP7325294B2 (ja) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI755664B (zh) * 2019-12-19 2022-02-21 日商日本真空技術服務股份有限公司 靜電吸盤用之供電裝置及基板管理方法
CN117954370A (zh) * 2024-03-27 2024-04-30 上海谙邦半导体设备有限公司 一种静电吸盘控制方法、静电吸盘及半导体加工设备

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KR100476845B1 (ko) * 1999-04-06 2005-03-17 동경 엘렉트론 주식회사 전극, 적재대, 플라즈마 처리 장치 및 전극과 적재대의제조 방법

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JP3306677B2 (ja) * 1993-05-12 2002-07-24 東京エレクトロン株式会社 自己バイアス測定方法及び装置並びに静電吸着装置
JP3733448B2 (ja) * 1994-04-27 2006-01-11 キヤノンアネルバ株式会社 プラズマ処理方法および装置並びに基板脱離方法及び印加電圧の制御装置
US5584974A (en) * 1995-10-20 1996-12-17 Eni Arc control and switching element protection for pulsed dc cathode sputtering power supply
JPH1197516A (ja) * 1997-09-24 1999-04-09 Hitachi Ltd 真空処理装置
JP2000091408A (ja) * 1998-09-16 2000-03-31 Hitachi Ltd 静電吸着装置およびそれを用いたウエハ処理装置
JP2002203837A (ja) * 2000-12-28 2002-07-19 Mitsubishi Electric Corp プラズマ処理方法および装置並びに半導体装置の製造方法
JP2006040993A (ja) * 2004-07-23 2006-02-09 Nikon Corp 静電チャック
JP2008047564A (ja) * 2006-08-10 2008-02-28 Tokyo Electron Ltd 真空処理装置、静電チャックの診断方法及び記憶媒体

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476845B1 (ko) * 1999-04-06 2005-03-17 동경 엘렉트론 주식회사 전극, 적재대, 플라즈마 처리 장치 및 전극과 적재대의제조 방법

Also Published As

Publication number Publication date
CN101587813A (zh) 2009-11-25
CN101908459A (zh) 2010-12-08
KR20110069757A (ko) 2011-06-23
JP2010004009A (ja) 2010-01-07
CN101587813B (zh) 2011-06-22
TWI466226B (zh) 2014-12-21
TW201009997A (en) 2010-03-01
JP2013175740A (ja) 2013-09-05
CN101908459B (zh) 2012-07-04
JP5315942B2 (ja) 2013-10-16
KR20090121251A (ko) 2009-11-25
KR101073765B1 (ko) 2011-10-13

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