201009997 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於對於半導體基板或是液晶顯示裝置 之玻璃基板等的被處理體而施加電漿處理之電漿處理裝置 、在彼中所使用之載置台機構、以及對靜電吸盤之電壓施 加方法。 ^ 【先前技術】 一般而言，當製造半導體積體電路或是液晶顯示裝 置的情況時，係成爲在半導體基板或玻璃基板上而反覆施 加成膜處理、蝕刻處理、改質處理、氧化擴散處理等。 而，在上述各種之處理中，例如在鈾刻處理等之中， 係使用電漿處理裝置而進行處理（專利文獻1〜3)。於此 ，針對先前技術之電漿處理裝置的其中一例，參考圖16 來作說明。如圖16中所示一般，此電漿處理裝置，例如 φ 係具備有由鋁合金所成之處理容器2，此處理容器2內， 係藉由未圖示之真空排氣系而成爲可進行真空排氣。在此 處理容器2之頂部處，作爲將必要之氣體導入至此處理容 器2內之氣體導入手段，而設置例如由鋁合金所成之噴淋 頭部4，同時，在處理容器2之底部側，係被設置有載置 台機構6。 此載置台機構6，主要係由：隔著例如由氧化鋁等之 陶瓷材所成之絕緣材8而被作設置之例如由處合金所成的 載置台10、和被設置在此之上面側處的靜電吸盤12所構 -5- 201009997 成。而’係成爲在上述靜電吸盤12上，作爲被處理體而 載置例如由玻璃基板或半導體基板所成之被處理體W，並 能夠將此藉由靜電力來作吸著。 如此這般’上述噴淋頭部4與載置台1〇，係被作對向 配置’並分別構成上部電極與下部電極，而成爲平行平板 型之電漿電極。具體而言，在上述載置台10處，係被連 接有商頻線14’在此局頻線14處，係依序被介在設置有 匹配電路16以及例如13.5 6MHz之高頻電源18，並成爲 藉由高頻電力而產生電漿。 又’在上述載置台1 〇處，係經由檢測線而被設置有 直流成分檢測電路22。此直流成分檢測電路22，係在上 述檢測線20處，將高頻截斷用之線圈24、第1電阻26以 及第2電阻28依序串聯連接而構成，並藉由上述高頻截 斷用之線圈24與第1電阻26間之連接點，而將電容器30 作分歧。而後，藉由以測定部32來對於上述第2電阻28 之電壓下降作測定，而成爲能夠對於電漿處理中之載置台 10的直流成分作辨識。 而後，係成爲藉由上述高頻截斷用之線圈24以及電 容器30，而將從載置台10而來之高頻電力作截斷。又， 此直流成分檢測電路22,係具備有用以在電漿處理結束並 停止了高頻電力之施加時，而將被充電於吸盤電極34與 載置台1 〇處之電荷作放出的功能。 又，上述靜電吸盤12，例如係在由聚醯亞胺系樹脂或 是陶瓷等所成之板狀的絕緣材之內部埋入吸盤電極34而 -6 - 201009997 構成之。而’從此吸盤電極3 4，係延伸有給電線3 6，在 此給電線30處’係經由對於高頻電力之侵入作阻止的濾 波部38而被連接有直流高壓電源40。 而，藉由將從此直流高壓電源40所產生了的高直流 電壓施加於上述吸盤電極34處，而成爲將此靜電吸盤12 上之被處理體W藉由靜電力來作吸著。上述濾波部38, 係在上述給電線36處’將高頻截斷用之線圈42以及電阻 φ 44依序串聯連接而構成，並藉由上述高頻截斷用之線圈 42與電阻44間之連接點，而將電容器46作分歧。 而後’藉由上述高頻截斷用之線圈42，被施加在載置 台10處之高頻電力之繞入至直流高壓電源40並侵入一事 ，係被作阻止。又，在此給電線3 6之濾波部3 8的下流側 處，係被設置有用以將直流高壓電源40作ON、OFF之吸 盤用開關部4 5。 在此種電漿處理裝置中，若是將被處理體載置於載置 ❹ 台1〇上’則係將上述吸盤用開關部45關閉，並從上述直 流高壓電源40來對於靜電吸盤12之吸盤電極34施加高 的直流電壓，在此吸盤電極34處，係充分地積蓄有電荷 ’並藉由靜電力來將被處理體W作安定的吸著。而後， 若是吸著被進行，則成爲藉由高頻電源18來施加高頻電 力’同時’從噴淋頭部4來流動特定之氣體、例如蝕刻氣 體’並經由上述高頻電力來產生電漿，而進行使用有電漿 之蝕刻處理。 而後’當上述蝕刻處理結束時，係停止蝕刻氣體之供 201009997 給’同時’將施加在載置台10處之高頻電力遮斷。進而 ’將上述吸盤用開關部45設爲開，並將施加於靜電吸盤 12之吸盤電極34處的高直流電壓遮斷，而後，經由直流 成分檢測電路22’來將積蓄在吸盤電極34以及載置台1〇 處之電荷作充分的放電，之後，將上述被處理體W取出[Technical Field] The present invention relates to a plasma processing apparatus which applies a plasma treatment to a target object such as a semiconductor substrate or a glass substrate of a liquid crystal display device, and the like. The stage mechanism used and the method of applying voltage to the electrostatic chuck. [Prior Art] In general, when a semiconductor integrated circuit or a liquid crystal display device is manufactured, a film formation process, an etching process, a reforming process, and an oxidation diffusion process are repeatedly applied to a semiconductor substrate or a glass substrate. Wait. In the above-described various processes, for example, in a uranium engraving process, a plasma processing apparatus is used for processing (Patent Documents 1 to 3). Here, an example of the prior art plasma processing apparatus will be described with reference to Fig. 16 . As shown in Fig. 16, in general, the plasma processing apparatus, for example, φ is provided with a processing container 2 made of an aluminum alloy, and the inside of the processing container 2 is made possible by a vacuum exhaust system (not shown). Vacuum exhaust. At the top of the processing container 2, as a gas introducing means for introducing a necessary gas into the processing container 2, a shower head 4 made of, for example, an aluminum alloy is provided, and at the bottom side of the processing container 2, The stage mechanism 6 is provided. The stage mechanism 6 is mainly composed of a mounting table 10 formed of, for example, an alloy, and an insulating material 8 made of a ceramic material such as alumina, and the upper surface side provided thereon. The electrostatic chuck 12 is constructed at -5 to 201009997. On the electrostatic chuck 12, the object W to be processed, for example, a glass substrate or a semiconductor substrate is placed as a target object, and this can be absorbed by an electrostatic force. In this manner, the shower head 4 and the mounting table 1 are disposed opposite each other and constitute an upper electrode and a lower electrode, respectively, and become a parallel plate type plasma electrode. Specifically, at the mounting table 10, a commercial frequency line 14' is connected to the local frequency line 14, and is sequentially placed in a matching circuit 16 and a high frequency power supply 18 such as 13.5 6 MHz. Plasma is generated by high frequency power. Further, the DC component detecting circuit 22 is provided on the mounting table 1 via the detecting line. The DC component detecting circuit 22 is configured such that the coil 24 for high-frequency interruption, the first resistor 26, and the second resistor 28 are connected in series in the detection line 20, and the coil for high-frequency interruption is used. The connection point between 24 and the first resistor 26 divides the capacitor 30. Then, by measuring the voltage drop of the second resistor 28 by the measuring unit 32, it is possible to recognize the DC component of the mounting table 10 in the plasma processing. Then, the coil 24 and the capacitor 30 for high-frequency interruption are used to cut off the high-frequency power from the mounting table 10. Further, the DC component detecting circuit 22 has a function of discharging the charges charged by the chuck electrode 34 and the mounting table 1 when the plasma processing is completed and the application of the high-frequency power is stopped. Further, the electrostatic chuck 12 is formed by, for example, embedding a chuck electrode 34 in a plate-shaped insulating material made of a polyimide or a ceramic or the like, and -6 - 201009997. On the other hand, the chuck electrode 34 extends from the supply wire 3 to the wire 30, and the DC high-voltage power source 40 is connected via the filter portion 38 for preventing the intrusion of high-frequency power. On the other hand, the high DC voltage generated from the DC high voltage power supply 40 is applied to the chuck electrode 34, whereby the object W on the electrostatic chuck 12 is sucked by the electrostatic force. The filter unit 38 is configured by connecting the coil 42 for high-frequency interruption and the resistor φ 44 in series to the power supply line 36, and connecting the coil 42 and the resistor 44 for the high-frequency interruption. The capacitor 46 is divided. Then, by the coil 42 for high-frequency interruption, the high-frequency power applied to the stage 10 is wound into the DC high-voltage power source 40 and invaded, and is prevented. Further, the downstream side of the filter unit 38 of the electric wire 36 is provided with a shutter switch unit 45 for turning the DC high voltage power supply 40 ON and OFF. In the plasma processing apparatus, when the object to be processed is placed on the mounting table 1', the suction switch portion 45 is closed, and the suction cup for the electrostatic chuck 12 is supplied from the DC high-voltage power source 40. The electrode 34 is applied with a high DC voltage, and at this chuck electrode 34, the charge is sufficiently accumulated and the object W is stabilized by electrostatic force. Then, if the sorption is performed, the high-frequency power source 18 is applied with high-frequency power, and a specific gas, for example, an etching gas, flows from the shower head 4, and plasma is generated via the high-frequency power. An etching treatment using a plasma is performed. Then, when the etching process is completed, the supply of the etching gas is stopped, and the high-frequency power applied to the mounting table 10 is blocked. Further, the switch unit 45 for the chuck is opened, and the high DC voltage applied to the chuck electrode 34 of the electrostatic chuck 12 is blocked, and then stored in the chuck electrode 34 and the load via the DC component detecting circuit 22'. Place the charge at 1 作 for sufficient discharge, and then take out the above-mentioned object W
[專利文獻1]日本特開平08-017808號公報 [專利文獻2]日本特開平08-031918號公報 [專利文獻3]日本特開2002-043402號公報 【發明內容】 [發明所欲解決之課題] 但是，在將被處理體作吸著時，直到在上述靜電吸盤 12之吸盤電極34處積蓄電而使靜電力充分地上升並安定 化爲止的期間中，或是在結束電漿處理時，於停止了高頻 電力之施加並將積蓄在靜電吸盤12處之電荷放出而安定 化爲止的期間中，雖然亦依存於吸盤電極34的表面積， 然而係不可避免地會耗費秒單位程度的時間。此係因爲， 吸盤等價電路係具備有由於電阻26、28、44或是在吸盤 電極34與載置台10之間所形成之電容成分所致的時間常 數之故。 於此情況，當半導體基板之直徑尺寸係爲6吋、8吋 之較小的情況時，雖然不會特別產生問題，但是’若是直 徑尺寸成爲12吋（300mm )或是其以上的尺寸’則在被 -8- 201009997 處理體之吸著時之直到在吸盤電極34處積蓄有充分之電 荷爲止的時間（電荷積蓄時間），或是當電漿處理之結束 時而將積蓄在吸盤電極34中之電荷充分地作放電爲止的 時間（電荷放出時間）中，係會耗費相當多的時間，因此 ，製品之生產性係變低，而有著使產率下降的問題。 特別是，當被處理體係爲液晶顯示裝置之玻璃基板的 情況時，此玻璃基板之大型化係爲顯著，而亦存在有成爲 Q 縱橫3mx3m之大型的玻璃基板，當此種大型之玻璃基板 的情況時，上述之電荷積蓄時間或電荷放出時間係分別成 爲需要50〜60秒左右，而有著無法避免大幅度的產率降 低之問題。 本發明，係注目於以上之問題點，並爲了有效地解決 此問題而創造者。本發明之目的，係在於提供一種：能夠 將當對吸盤電極施加直流電壓時以及將施加於吸盤電極處 之直流電壓遮斷時的吸盤等價電路之時間常數縮小，其結 0 果，能夠將對於吸盤電極之電荷的積蓄以及電荷的放出分 別迅速地進行，而提升製品之生產性，並使產率提升之載 置台機構、使用有此之電漿處理裝置、及對靜電吸盤之電 壓施加方法。 [用以解決課題之手段] 申請項1之發明，係爲一種載置台機構，係爲被設置 在成爲可進行真空排氣之處理容器內，並將使用經由高頻 電力所產生之電漿而被施加特定之電漿處理的被處理體作 -9- 201009997 載置之載置台機構，其特徵爲 以載置前述被處理體，並由導 係被配置在前述載置台之上面 吸著，而於內部被設置有吸盤 爲了施加使靜電力產生之直流 於前述吸盤電極處：和吸盤用 述給電線之途中，當將前述被 ;和直流成分檢測電路，係爲 加在前述載置台處之直流成分 載置台處；和旁通線，係將前 :和旁通用開關部，係被介在 並當將前述吸盤用開關部切換 態時，將前述直流檢測電路作 ;和開關控制部，係對2個的 如此這般，在載置台機構 並對於吸盤電極施加直流電壓 旁通並將載置台接地之旁通用 盤用開關部開啓並將施加於吸 亦係將使直流檢測電路作旁通 關部關閉，因此，係能夠將當 以及當將施加於吸盤電極處之 電路的時間常數縮小，其結果 電荷的積蓄以及電荷的放出分 品之生產性，並能夠將產率提 ’具備有：載置台，係爲用 電構件所成；和靜電吸盤， ，並爲了將前述被處理體作 電極；和直流高壓電源，係 電壓，而經由給電線而連接 開關部，係被介在設置於前 處理體作吸著時，係被關閉 了將在前述電漿處理時所施 檢測出來，而被連接於前述 述直流成分檢測電路作旁通 設置於前述旁通線之途中， 爲閉狀態時以及切換爲開狀 旁通，而將前述載置台接地 前述開關部作控制。 中，當將吸盤用開關部關閉 時，係將使直流檢測電路作 開關部關閉，進而，當將吸 盤電極之直流電壓遮斷時， 並將載置台接地之旁通用開 對吸盤電極施加直流電壓時 直流電壓遮斷時之吸盤等價 ，係能夠將對於吸盤電極之 別迅速地來進行，而提升製 升。 -10- 201009997 申請項2之發明，係在申請項1之發明中，具備有以 下特徵：係具備有：濾波部，其係被介在設置於前述給電 線之途中，並對於前述高頻電力侵入至前述直流高壓電源 中一事作阻止。 申請項3之發明，係在申請項2之發明中，具備有以 下特徵：前述濾波部，係爲由電阻元件所成、或是由電阻 元件與電容元件所成。 Q 申請項4之發明，係在申請項2之發明中，具備有以 下特徵：前述濾波部，係爲由感應元件所成、或是由感應 元件與電容元件所成。 申請項5之發明，係在申請項1乃至4中之任一項所 記載之發明中，具備有以下特徵：前述直流成分檢測電路 ，係經由檢測線而被連接於前述載置台處。 申請項6之發明，係在申請項1乃至5中之任一項所 記載之發明中’具備有以下特徵：前述開關控制部，當將 φ 前述吸盤用開關部切換爲閉狀態時，係以與此切換同時地 、或是在此切換之前，而將前述旁通用開關部切換爲閉狀 態的方式，來進行控制。 申請項7之發明’係在申請項6所記載之發明中，具 備有以下特徵：前述開關控制部，係以在將前述吸盤用開 關部從開狀態而切換爲閉狀態後，於經過了特定時間時， 將前述旁通用開關部切換爲開狀態的方式，來進行控制。 申請項8之發明，係在申請項1乃至7中之任一項所 記載之發明中’具備有以下特徵：前述開關控制部，當將 -11 - 201009997 前述吸盤用開關部切換爲開狀態時，係以與此切換同時地 、或是在切換後而經過了特定之時間時，而將前述旁通用 開關部切換爲開狀態的方式，來進行控制。 申請項9之發明，係在申請項8所記載之發明中，具 備有以下特徵：前述開關控制部，係以在將前述吸盤用開 關部從閉狀態而切換爲開狀態後，於經過了特定時間時， 將前述旁通用開關部切換爲開狀態的方式，來進行控制。 申請項1〇之發明，係爲一種載置台機構，係爲被設 置在成爲可進行真空排氣之處理容器內，並將使用經由高 頻電力所產生之電漿而被施加特定之電漿處理的被處理體 作載置之載置台機構，其特徵爲，具備有：載置台，係爲 用以載置前述被處理體，並由導電構件所成；和靜電吸盤 ，係被配置在前述載置台之上面，並爲了將前述被處理體 作吸著，而於內部被設置有吸盤電極；和直流高壓電源， 係爲了施加使靜電力產生之直流電壓，而經由在途中設置 有對於高頻電力之侵入作防止的濾波部之給電線，而與前 述吸盤電極相連接；和吸盤用開關部，係被介在設置於前 述給電線之途中，當將前述被處理體作吸著時，係被關閉 ;和直流成分檢測電路，係爲了將在前述電漿處理時所施 加在前述載置台處之直流成分檢測出來，而被連接於前述 載置台處；和開關控制部，係對前述吸盤用開關部作控制 ，前述濾波部，係被設爲並不包含有電阻元件地而藉由電 容元件與介電元件所形成。 申請項11之發明，係在申請項1乃至10中之任一項 -12- 201009997 所記載之發明中，具備有以下特徵：前述直流高壓電源， 係被設爲可進行切換並能夠施加複數種類之直流電壓，且 該載置台機構係更進而具備有：電位監測部，係被設置在 前述給電線之途中，並對於前述吸盤電極側之電位作監測 ;和電源控制部，係當前述吸盤用開關部被關閉時，將前 述複數種類之直流電壓內的高電壓之第1直流電壓作施加 ，同時，當前述電位監測部之檢測値成爲了特定之値時， 0 切換爲低電壓之第2直流電壓並作施加的方式，進行控制 〇 申請項12之發明，係在申請項1 1之發明中，具備有 以下特徵：前述直流高壓電源，係被設爲可進行切換並能 夠施加複數種類之直流電壓，該載置台機構，係更進而具 備有對前述直流高壓電源作控制之電源控制部，前述電源 控制部，係以下述之方式來進行控制：若是前述吸盤用開 關部被關閉，則最初係將前述複數種類之直流電壓內的高 φ 電壓之第1直流電壓作施加，並在經過了特定之時間時’ 切換爲低電壓之第2直流電壓並作施加。 申請項13之發明，係在申請項1乃至10中之任一項 之發明中，具備有以下特徵：所謂前述特定之時間，係爲 從對於前述吸盤電極而開始了前述第1直流電壓之施加後 起直到前述吸盤電極之電位到達額定電壓爲止的期間以下 之長度。 申請項14之發明，係在申請項11乃至13中之任一 項之發明中，具備有以下特徵：前述第1直流電壓，係被 -13- 201009997 設定爲較前述吸盤電極之額定電壓更高，前述第2直流電 壓，係被設定爲前述額定電壓。 申請項15之發明，係在申請項11乃至14中之任一 項之發明中，具備有以下特徵：前述直流高壓電源，係以 能夠輸出前述第1直流電壓與前述第2直流電壓的方式， 而將輸出電壓設爲可變。 申請項16之發明，係在申請項1乃至14中之任一項 之發明中，具備有以下特徵：前述直流高壓電源，係具備 爽 有：輸出前述第1直流電壓之第1電源部、和輸出前述第 2直流電壓之第2電源部。 申請項17之發明，係在申請項1乃至16中之任一項 所記載之發明中，具備有以下特徵：前述被處理體，係爲 絕緣物。 申請項18之發明，係爲一種電漿處理裝置，其係爲 對於被處理體而施加特定之電漿處理的電漿處理裝置，其 特徵爲，具備有：處理容器，係成爲可進行真空排氣；和 @ 氣體導入手段，係將必要之氣體導入至前述處理容器內； 和排氣手段，係將前述處理容器內作真空排氣；和如申請 項1乃至17項中之任一項所記載之載置台機構，係用以 在前述處理容器內而將前述被處理體作載置。 申請項19之發明，係在申請項18所記載之發明中， 具備有以下特徵：前述氣體導入手段，係藉由噴淋頭部所 成，並以藉由該噴淋頭部與前述載置台機構之載置台來形 成平行平板型之上部電極與下部電極的方式，而被構成。 -14- 201009997 申請項20之發明，係在申請項19所記載之發明中， 具備有以下特徵：在前述載置台處，係被連接有高頻電源 〇 申請項21之發明，係在申請項18乃至20中之任一 項所記載之發明中，具備有以下特徵：在前述噴淋頭部處 ，係被連接有第2高頻電源。 申請項22之發明，係在申請項18乃至21中之任一 0 項所記載之發明中，具備有以下特徵：前述被處理體，係 爲半導體基板或是絕緣物基板。 申請項23之發明，係爲一種對靜電吸盤之電壓施加 方法，其係爲對於被設置在載置台處之靜電吸盤之電壓施 加方法，該載置台，係被設置在成爲可進行真空排氣之處 理容器內，並將被施加電漿處理之被處理體作載置，同時 ，被設爲可進行高頻電壓之施加，該電壓施加方法，其特 徵爲：對於前述靜電吸盤之吸盤電極，施加複數種類之直 φ 流電壓內的高電壓之第1直流電壓，同時，與前述第1直 流電壓之施加同時地、或是在施加之前，而將前述載置台 作接地，在從前述第1直流電壓之施加的開始起而經過了 特定之時間時，切換爲較前述第1直流電壓爲更低電壓之 第2直流電壓並作施加，在從切換至前述第2直流電壓起 而經過了特定之時間時，將前述載置台之接地切斷，並在 將前述載置台之接地切斷後，對前述載置台施加高頻電壓 〇 申請項24之發明，係在申請項23之發明中，具備有 -15- 201009997 以下特徵：從前述第1直流電壓之施加的開始起之前述特 定時間，係被預先制訂。 申請項25之發明，係在申請項23之發明中，具備有 以下特徵：從前述第1直流電壓之施加的開始起之前述特 定之時間，係爲從對於前述吸盤電極而開始了前述第1直 流電壓之施加後起直到前述吸盤電極之電位到達額定電壓 爲止的期間以下之長度。 申請項26之發明，係在申請項23乃至25中之任一 項所記載之發明中，具備有以下特徵：從切換至前述第2 直流電壓起之前述特定時間，係爲直到前述載置台之電位 成爲安定爲止的時間。 [發明之效果] 若藉由本發明之載置台機構、使用有此之電漿處理裝 置、以及對靜電吸盤之電壓施加方法，則係能夠發揮下述 一般之優秀的作用效果。 若藉由本發明，則在載置台機構中，當將吸盤用開關 部關閉並對於吸盤電極施加直流電壓時，係將使直流成分 檢測電路作旁通並將載置台接地之旁通用開關部關閉，進 而’當將吸盤用開關部開啓並將施加於吸盤電極之直流電 壓遮斷時，亦係將使直流成分檢測電路作旁通並將載置台 接地之旁通用開關部關閉，因此，係能夠將當對吸盤電極 施加直流電壓時以及當將施加於吸盤電極處之直流電壓遮 斷時之吸盤等價電路的時間常數縮小，其結果，係能夠將 -16- 201009997 對於吸盤電極之電荷的積蓄以及電荷的放出分別迅速地來 進行’而提升製品之生產性，並能夠將產率提升。 【實施方式】 以下，針對本發明之載置台機構、使用有此之電漿處 理裝置、以及對靜電吸盤之電壓施加方法的合適之其中一 種實施型態，根據所添附之圖面來作詳細敘述。 〈第1實施型態〉 圖1，係爲展示使用有本發明之載置台機構的電漿處 理裝置之第1實施型態的構成圖。於此，作爲電漿處理， 以對於玻璃基板而施加電漿蝕刻處理之情況作爲例子來進 行說明。 如圖1中所示一般，此電漿處理裝置50，例如係具備 有由鋁合金所成之處理容器52，此處理容器52係被作接 〇 地。在此處理容器52之側壁處，係被形成有用以使被處 理體W通過之開口 54，在此開口 54處，係被安裝有將此 氣密地作開閉之閘閥5 6。 又，在處理容器52之底部的週邊處，係被設置有排 氣口 58，在此排氣口 58處，係被設置有對處理容器52內 進行真空排氣之排氣手段60。具體而言，此排氣手段60 ，係具備有被連結於上述排氣口 58處之排氣管線62,在 此排氣管線62處，係依序被介在設置有壓力調整閥64以 及真空幫浦66，並成爲能夠一面將處理容器52內作真空 -17- 201009997 抽氣一面維持於特定之壓力。 又，在處理容器5 2之頂部處，作爲將必要之氣體導 入至此處理容器52內之氣體導入手段，而設置例如由鋁 合金所成之噴淋頭部68。在此噴淋頭部68之上部處，係 被設置有氣體入口 70，在此氣體入口 70處，係經由氣體 管線72而被連接有氣體源74。而，在此氣體管線72之途 中，係被介在設置有如同質量流控制器一般之流量控制器 76，並成爲一面對於流量作控制一面使必要之氣體（例如 蝕刻氣體）作流動。 又’在上述噴淋頭部68之下面的氣體噴射面處，係 被形成有複數之氣體噴出孔78，並成爲將上述被供給了的 氣體’朝向此下方之處理空間S來作供給。而，在此處理 容器52內，係以與上述噴淋頭部68相對向的方式，而被 設置有本發明之載置台機構80。 具體而言’此載置台機構80，主要係由：隔著例如由 氧化鋁等之陶瓷材所成之絕緣材82而被設置在處理容器 52之底部處的例如由鋁等之導電材料所成之載置台84、 和被設置在此之上面側處的靜電吸盤86所構成。而，在 此靜電吸盤86上，係作爲被處理體而載置例如液晶顯示 裝置用之玻璃基板W，並成爲能夠藉由靜電力來將此玻璃 基板W作吸著。於此，上述玻璃基板w之大小，例如係 被設定爲縱橫分別爲3mx3m左右之大小，而成爲非常大 的尺寸。於此’作爲上述導電材料，例如，除了鋁等之金 屬以外，亦可使用不鏽鋼等之合金或是碳，以及此些之複 "18- 201009997 合材料等。 如此這般，上述噴淋頭部68與載置台84，係被作對 向配置，並分別構成上部電極與下部電極，而成爲平行平 板型之電漿電極。具體而言，在上述載置台84處，係被 連接有高頻線88，在此高頻線88處，係依序被介在設置 有匹配電路90以及例如13.56MHz之高頻電源92，並成 爲藉由高頻電力而產生電漿。 φ 又，在上述載置台84處，係經由檢測線94而被設置 有直流成分檢測電路96。另外，亦可將此檢測線94藉由 被設置在上述高頻線88處之匹配電路90的下流側來作分 歧並設置之。此直流成分檢測電路96，係在上述檢測線 94處，將高頻截斷用之線圏98、第1電阻100以及第2 電阻102依序串聯連接而構成，並藉由上述高頻截斷用之 線圏98與第1電阻100間之連接點，而將電容器104作 分歧，而將此另外一端作接地。而後，藉由以測定部106 φ 來對於上述第2電阻1 02之電壓下降作測定，而成爲能夠 對於電漿處理中之載置台84的直流成分作檢測並辨識出 來。 而後，係成爲藉由上述高頻截斷用之線圈98以及電 容器104，而將從載置台84而來之高頻電力作截斷。又， 此直流成分檢測電路96，係具備有用以在電槳處理結束並 停止了高頻電力之施加時，而將被充電於吸盤電極86與 載置台84處之電荷作放出的功能。 而，在上述檢測線94處，係被設置有成爲將此檢測 -19- 201009997 線94之上述直流成分檢測電路96之上流側與下流側 連接的身爲本發明之特徵的旁通線1〇8。而，在此旁 108之途中，係被設置有旁通用開關部110，在必要 亦即是，當如後述一般地將施加至靜電吸盤86處之 電壓作ON、OFF時，係將此旁通用開關部110關閉 成爲能夠將上述載置台84並不經由電阻或線圈地而 作接地。此旁通用開關部11 〇之開閉動作的控制，係 藉由開關控制部1 1 2來進行。 又，上述靜電吸盤86，例如係在由聚醯亞胺系樹 是陶瓷等所成之板狀的絕緣材之內部埋入吸盤電極1] 構成之。而，從此吸盤電極114，係延伸有給電線1 在此給電線116處，係經由對於高頻電力之侵入作阻 濾波部118而被連接有直流高壓電源120。 而，藉由將從此直流高壓電源120所產生了的高 電壓施加於上述吸盤電極114處，而成爲將此靜電吸 上之玻璃基板W藉由靜電力來作吸著。此直流高壓 120之輸出電壓，例如係爲3kV左右，但是，係並不 定於此。上述瀘波部118，於此係藉由感應元件、亦 藉由高頻截斷用之線圈122而被構成。 而後，藉由上述高頻截斷用之線圈112，被施加 置台84處之高頻電力之繞入至直流高壓電源120並 一事，係被作阻止。 又，在此給電線116之濾波部118的下流側處， 設置有用以將直流高壓電源120作ON、OFF之吸盤 作了 通線 時， 直流 ，並 直接 成爲 脂或 14而 16， 止的 直流 盤86 電源 被限 即是 在載 侵入 係被 用開 201009997 關部1 2 4。 此吸盤用開關部1 24之開閉動作的控制，係成爲藉由 上述開關控制部1 12來進行。又，此電漿處理裝置5 〇之 動作全體的控制’例如製程壓力之控制，供給氣體之供給 開始、供給停止之控制，高頻電力之施加的控制，對於開 關控制部1 2之各開關部的開閉動作之指示等，係藉由由 電腦所成之裝置控制部1 26來進行。又，在此動作控制中 0 所必要之電腦可讀取的電腦程式，係被記憶在記憶媒體 128中。此記憶媒體128，係爲藉由軟碟片、CD ( Compact Disc) 、CD-ROM、硬碟、快閃記憶體或是DVD等所成。 另外，雖並未作圖示，但是，在上述載置台機構80處， 係被設置有當將被處理體作搬入搬出時而對被處理體作接 收的升降銷。 接著，針對使用如同上述一般所構成之電漿處理裝置 5 〇所進行的電漿蝕刻處理，參考圖2以及圖3來作說明。 φ 圖2，係爲對於吸盤用開關部和旁通用開關部之切換的時 序與吸盤電極之電位以及高頻電力之施加的時序間的關係 作展示之時序圖，圖3係爲展示在載置台機.構之靜電吸盤 處的對於直流電壓之吸盤等價電路的圖。 首先，若是針對全體性之流程作說明，則係將身爲被 處理體之玻璃基板W，經由被開啓了的閘閥5 6以及開口 54而搬入至處理容器52內，並經由使未圖示之舉升銷作 升降，來將此載置於載置台84上，再將處理容器52內密 閉。 -21 - 201009997 而後，若是玻璃基板w被載置於載置台84上，則係 將上述吸盤用開關部124關閉，並從上述直流高壓電源 120來對於靜電吸盤86之吸盤電極114施加高的直流電壓 ，在此吸盤電極114處，係充分地積蓄有電荷，並藉由靜 電力來將玻璃基板W作安定的吸著。於此，當將上述吸 盤用開關部124關閉時，旁通用開關部11〇亦在特定之期 間中被設爲閉狀態。而後，若是吸著被進行，則成爲藉由 高頻電源92來施加高頻電力，同時，從噴淋頭部68來流 A 動特定之氣體、例如蝕刻氣體，並經由上述高頻電力來在 處理空間S中產生電漿，而進行使用有電漿之蝕刻處理。 又，在電漿處理中，雖係藉由在處理空間S中所產生 了的電漿之作用而使電位被產生，但是，經由此電位，在 檢測線9 4中係流動有電流’而此電位，係通過直流成分 檢測電路96之線圈98、第1電阻1〇〇以及第2電阻102 ，而流動至接地側。 而後’藉由以測定部1 06來對於當電流在上述第2電 ◎ 阻102中流動時所產生的電壓下降作測定，係成爲檢測出 載置台84之直流電壓。 又，此時’藉由上述線圈98以及電容器1〇4之作用 ，被施加在載置台84處之高頻電力的繞入並流動至直流 成分檢測電路96側一事，係被作阻止。 又，同樣的，藉由被設置在給電線116處之高頻截斷 用之線圈122的作用，被施加在載置台84處之高頻電力 的繞入並流動至直流高壓電源120處一事，係被作阻止。 -22- 201009997 而後，當上述蝕刻處理結束時，係停止蝕刻氣體之供 給，同時，將施加在載置台84處之高頻電力遮斷。進而 ，將上述吸盤用開關部124設爲開，並將施加於靜電吸盤 86之吸盤電極114處的高直流電壓遮斷，而後，經由直流 成分檢測電路96，來將積蓄在吸盤電極114以及載置台 84處之電荷作充分的放電。於此，當將上述吸盤用開關部 124設爲開時，旁通用開關部110亦在特定之期間中被設 n 爲閉狀態。而，若是所積蓄了的電荷之放電結束，則係成 爲將上述玻璃基板w取出。 於此，在先前技術之電漿處理裝置中，當將圖16中 所示之吸盤用開關部45關閉並對吸盤電極34施加高直流 電壓時，在直到電荷被積蓄在吸盤電極34或載置台10處 並產生充分的靜電力爲止所需的時間（電荷積蓄時間）中 ，係需要長的時間，又，當爲了結束電漿處理而將吸盤用 開關部45開啓並將積蓄在吸盤電極34或是載置台10處 φ 之電荷作充分的放電爲止所需的時間（電荷放電時間）， 亦需要長的時間，但是，當本發明之電漿處理裝置50的 情況時，係能夠將上述電荷積蓄時間或是電荷放電時間大 幅地縮短。 亦即是，當將吸盤用開關部1 24從開狀態而切換至閉 狀態時、以及從閉狀態而切換至開狀態時，係將被設置在 旁通線108處之旁通用開關部110於特定之期間中而維持 於閉狀態，並將載置台84並不經由包含有電阻成分之上 述直流成分檢測電路96地而直接作接地，而將吸盤等價 -23- 201009997 電路之電阻成分盡可能的縮小。具體而言，上述開關控制 部112，當將上述吸盤用開關部124切換爲閉狀態時，係 以與此切換同時地、或是在此切換之前，而將前述旁通用 開關部110切換爲閉狀態的方式，來進行控制。 又，此開關控制部1 1 2，當將上述吸盤用開關部1 24 切換爲開狀態時，係以與此切換同時地、或是在此切換之 前，而將上述旁通用開關部110切換爲閉狀態的方式，來 進行控制。其結果，吸盤等價電路之時間常數係變小，因 此，係成爲能夠使對於吸盤電極114或是載置台84之電 荷的積蓄以及電荷的放電迅速地來進行。又，開關控制部 112，係以在上述吸盤用開關部124之從開狀態而切換爲 閉狀態或是從閉狀態而切換爲開狀態後，當經過了特定時 間時，將旁通用開關部1 1 〇從閉狀態而切換至開狀態的方 式，來進行控制。 於此，參考圖2，對於吸盤用開關部124與旁通用開 關部110之切換的時序和吸盤電極H4之電位以及高頻電 力之施加的時序間的關係作說明。如圖2中所示一般，當 圖2 ( A )中所示之將吸盤用開關部1 24從開狀態來切換 至閉狀態時、以及從閉狀態來切換至開狀態時，如圖2 ( B)中所示一般，係以橫跨此切換點的方式，而將旁通用 開關部110維持在閉狀態，並使直流成分檢測電路96作 旁通，藉由此，此時之吸盤等價電路的時間常數係變小。 於此情況，亦可與吸盤用開關部124之開閉的切換同 時地來進行旁通用開關部11〇之朝向閉的切換，但是，在 -24- 201009997 將吸盤用開關部124切換爲閉之後，直到在吸盤電極114 或是載置台84中充分地積蓄有電荷而靜電力安定爲止之 至少特定的時間T1中（參考圖2(C))，係維持上述旁 通用開關部110之閉狀態。此特定之時間T1，雖然亦依 存於吸盤電極114之面積，但是，通常係爲數秒〜十數秒 〇 又，在先前技術之裝置例中，隨著經由對於吸盤電極 φ 114之充電而使電荷積蓄，載置台84之電位係變動，若是 在此狀態下而施加高頻電壓，則會有產生異常放電之虞， 但是，在本實施型態中，由於直到施加高頻電壓之前一刻 爲止，旁通用開關部110係被關閉，而被作接地，因此， 能夠將載置台84之電位安定化爲接地電位，而，由於係 在此狀態下而施加高頻電壓，因此，能夠對於異常放電之 發生作抑制。 又，同樣的，在將吸盤用開關部124切換爲開之後， ❹直到在吸盤電極114或是載置台84中所積蓄之電荷被充 分地放電爲止之至少特定的時間T2中（參考圖2(C)) ’係維持上述旁通用開關部110之閉狀態。此特定之時間 T2’雖然亦依存於吸盤電極114之面積，但是，通常係爲 數秒〜十數秒。另外’如圖2(D)中所示一般，高頻電 力’係在靜電力安定後再被施加至載置台84處。又，在 電漿處理中’旁通用開關部11〇係被設爲開狀態，直流成 分檢測電路96係起作用，而載置台84之直流電壓係被作 測定。 -25- 201009997 於此，參考圖3以及圖4’對上述吸盤用開關部124 之開閉時（旁通用開關部110亦爲閉狀態）的吸盤等價電 路作說明。圖3，係爲對於在載置台機構之靜電吸盤處的 相對於直流電壓之吸盤等價電路作展示的圖’圖4係爲對 於吸盤電極之電位的變化作展示之圖。 如圖3中所示一般，係成爲吸盤用開關部124之開閉 時（旁通用開關部Η 〇亦爲閉狀態）的直流高壓電源1 20 之起電力Ε與電阻成分R以及電容成分C之間的串聯電 Α 路。於此，電阻成分R，由於直流成分檢測電路96係被 作旁通，因此，實質上，係僅有被設置在給電線116處之 高頻截斷用之線圈122的電阻成分，而爲非常小。又，電 容成分C，由於係經由吸盤電極114之面積與載置台84 之上面的面積而被決定，而依存於裝置之大小，因此，若 是決定了裝置之尺寸，則係成爲一定。 圖4(A)，係展示將吸盤用開關部124由開而切換 至閉時的狀態，圖4(B)，係展示將吸盤用開關部124 ^ 由閉而切換至開時的狀態。另外，於圖4中，爲了作參考 ，係將先前技術之電漿處理裝置的情況以虛線來作展示。 於此，吸盤電極114之電位e(t)，係藉由下述之數 式而被賦予。 e(t) = E〔 1 -e(-t/RC)〕 於此’ e係代表自然對數（exp ) ，rc係代表時間常 -26- 201009997 數，t係代表時間》 如上述一般，相較於先前技術之電漿處理裝置，由於 電阻成分R係變爲非常小，因此，時間常數”RC”係變得非 常小。故而，如同圖4(A)以及圖4(B)中所示一般， 在本發明之情況中，直到成爲安定爲止的過渡時間，係成 爲非常短。 在將吸盤電極之大小設爲了縱橫3mx3m之大小並進 0 行了模擬後，其結果，於先前技術之裝置的情況時，直到 安定化爲止的時間L1，係成爲60秒左右，相對於此，在 本發明之情況中，直到安定化爲止的時間L2，係爲1 〇秒 左右，而能夠確認到：係能夠將電荷積蓄時間以及電荷放 電時間縮短。 另外，在圖16所示之先前技術的電漿處理裝置中， 電阻成分，係成爲第1電阻26、第2電阻28與電阻44以 及各線圈24、42之電阻成分，相較於本發明之情況，係 _ 成爲非常大的値。又，電容成分C，由於係將裝置尺寸設 定爲相同，因此，本發明之裝置與先前技術之裝置，係爲 相同之値。 如此這般，在本發明之載置台機構80中，當將吸盤 用開關部124關閉並對於吸盤電極114施加直流電壓時， 係將使直流成分檢測電路96作旁通並將載置台84接地之 旁通用開關部110關閉，進而，當將吸盤用開關部124開 啓並將施加於吸盤電極114之直流電壓遮斷時，亦係將使 直流成分檢測電路96作旁通並將載置台84接地之旁通用 -27- 201009997 開關部11 〇關閉，因此，係能夠將當對吸盤電極114施加 直流電壓時以及當將施加於吸盤電極114處之直流電壓遮 斷時之吸盤等價電路的時間常數縮小，其結果，係能夠將 對於吸盤電極114之電荷的積蓄以及電荷的放出分別迅速 地來進行，而提升製品之生產性，並能夠將產率提升。 又，由於係將對於高頻電力之侵入至直流高壓電源 120 —事作阻止的濾波部118，僅藉由身爲感應元件之高 頻截斷用之線圈122來構成，因此，相較於先前技術之電 漿處理裝置，係能夠將在吸盤等價電路處之電阻成分R( 參考圖3)縮小並使時間常數更加變小，其結果，係使電 荷積蓄時間以及電荷放電時間縮短，而能夠將產率更進一 步的提升。 〈第2實施型態〉 接下來，針對本發明之載置台機構的第2實施型態作 說明。圖5’係爲展示本發明之載置台機構的第2實施形 _ 態之重要部位的構成圖。另外，針對與圖1以及圖16中 所示之構成部分爲相同之構成部分，係附加相同之參考符 號，並省略其說明。 在先前之第1實施型態中，係藉由身爲感應元件之高 頻截斷用之線圈122來構成連接於直流高壓電源120處之 濾波部118，並且’係藉由被介在設置有旁通用開關部 110之旁通線108’來設爲能夠在必要時而將直流成分檢 測電路96作旁通’但是，係並不被限定於此，而亦可將 -28- 201009997 上述之濾波部118’設爲與圖16中所示之先前技術的裝置 相同之構成。 亦即是，如圖5中所示—般’於此’係與圖16中所 示之濾波部38同樣的’以將高頻截斷用之線圈42與電阻 44作串聯連接，並藉由兩者之連接點來使電容器46分歧 ，而將此另外一端作接地的方式，來構成濾波部118。 此情況中之吸盤用開關部1 24以及旁通用開關部1 1 0 φ 之開閉操作，係與在圖2中所作了說明的情況爲相同。在 此第2實施型態之情況中，亦與先前之第1實施型態的情 況相同，能夠將當對吸盤電極1 1 4施加直流電壓時以及將 施加於吸盤電極Π4處之直流電壓遮斷時的吸盤等價電路 之時間常數縮小，其結果，能夠將對於吸盤電極1 1 4之電 荷的積蓄以及電荷的放出分別迅速地進行，而能夠提升製 品之生產性，並使產率提升。 但是，相較於第1實施型態之情況，在此第2實施型 φ 態之情況中，由於增加了瀘波部1 1 8之直流成分（電阻44 )，故伴隨於此，時間常數亦變大，其結果，相較於第1 實施型態，電荷積蓄時間或是電荷放電時間係稍爲欠缺迅 速性。 〈第3實施型態〉 接下來，針對本發明之載置台機構的第3實施型態作 說明。圖6，係爲展示本發明之載置台機構的第3實施形 態之重要部位的構成圖。另外，針對與圖1、圖5以及圖 -29- 201009997 16中所示之構成部分爲相同之構成部分，係附加相同之參 考符號，並省略其說明。 首先，在圖5所示之第2實施型態中，係將濾波部 118設爲與圖16所示之先前技術之裝置爲相同的構成，但 是，係並不被限定於此，代替上述濾波部118處之電阻44 ，亦可如圖6中所示一般而設置另外的高頻截斷用之線圈 130。亦即是，於此情況中，濾波部118,係藉由身爲感應 元件之高頻截斷用之線圈42、130，以及身爲電容元件之 電容器46所構成。於此情況，藉由2個的高頻截斷用之 線圈42、130，高頻係成爲被截斷。 此情況中之吸盤用開關部124以及旁通用開關部110 之開閉操作，係與在圖2中所作了說明的情況爲相同。在 此第3實施型態之情況中，亦與先前之第1以及第2實施 型態的情況相同，能夠將當對吸盤電極1 1 4施加直流電壓 時以及將施加於吸盤電極處之直流電壓遮斷時的吸盤 等價電路之時間常數縮小，其結果，能夠將對於吸盤電極 114之電荷的積蓄以及電荷的放出分別迅速地進行，而能 夠提升製品之生產性，並使產率提升。 但是，相較於第2實施型態之情況，在此第3實施型 態之情況中，由於減少了濾波部118之身爲電阻成分的電 阻44，故伴隨於此，時間常數亦變小，其結果，相較於第 2實施型態，係能夠使電荷積蓄時間或是電荷放電時間成 爲更短。 -30- 201009997 〈第4實施型態〉 接下來，針對本發明之載置台機構的第4實施型 說明。圖7，係爲展示本發明之載置台機構的第4實 態之重要部位的構成圖。另外，針對與圖1、圖5、 以及圖16中所示之構成部分爲相同之構成部分，係 相同之參考符號，並省略其說明。 在先前之第3實施型態中，係藉由身爲感應元件 0 頻截斷用之線圈42、130以及身爲電容元件之電容器 來構成連接於直流高壓電源120處之濾波部118，並 係藉由被介在設置有旁通用開關部1 1 0之旁通線1 08 設爲能夠在必要時而將直流成分檢測電路96作旁通 是，係並不被限定於此，而亦可如圖7中所示一般， 並不設置上述之旁通線108以及旁通用開關部110。 此情況中之吸盤用開關部1 24之開閉操作，係與 2中所作了說明的情況爲相同，但是，圖2 ( B )中所 φ 旁通用開關部110，在此第4實施型態中係並未被使 在此第4實施型態之情況中，亦與先前之第1實施型 情況相同，能夠將當對吸盤電極1 1 4施加直流電壓時 將施加於吸盤電極114處之直流電壓遮斷時的吸盤等 路之時間常數縮小，其結果，能夠將對於吸盤電極1 1 電荷的積蓄以及電荷的放出分別迅速地進行，而能夠 製品之生產性，並使產率提升。 但是，相較於第3實施型態之情況，在此第4實 態之情況中，由於增加了直流成分檢測電路96之直 態作 施形 圖 6 附加 之高 46， 且， ，來 ，但 設爲 在圖 示之 用。 態的 以及 價電 4之 提升 施型 流成 -31 - 201009997 分（電阻100、102 )，故伴隨於此，時間常數亦變大，其 結果，相較於第3實施型態，電荷積蓄時間或是電荷放電 時間係成爲稍爲欠缺迅速性。然而，在此第4實施型態之 情況中，亦同樣的，相較於圖16中所示之先前技術之裝 置，藉由將在濾波部38處之電阻44替換爲高頻截斷用之 線圈130，由於電阻成分係減少，因此，其結果，係能夠 將電荷積蓄時間或電荷放電時間縮短。 〈第5實施型態〉 接下來，針對本發明之載置台機構的第5實施型態作 說明。圖8，係爲展示本發明之載置台機構的第5實施形 態之重要部位的構成圖。另外，針對與圖1中所示之構成 部分爲相同之構成部分，係附加相同之參考符號，並省略 其說明。 在先前之第1〜第4實施型態中，身爲上部電極之噴 淋頭部68，係爲接地狀態，但是，係並不被限定於此，亦 可設爲對此噴淋頭部68而施加高頻電力。圖8，係作爲代 表’而使用圖1中所示之裝置，來對於將高頻電力施加於 噴淋頭部68處之情況的構成作展示，但是，於此所說明 之構成’係可適用在第1〜第4實施型態之所有的實施型 態中。亦即是’如圖8中所示一般，於此，身爲氣體導入 手段之噴淋頭部68，係隔著絕緣構件134而被安裝於處理 容器52之頂面部處。 而’在此噴淋頭部68處，係被連接有高頻線136，在 -32- 201009997 此高頻線136之途中，介在設置匹配電路138，並於 —端側，連接高頻電源140。作爲此高頻電源140之 ，例如係可使用450kHz等。其結果，在此第5實施 中，在身爲上部電極之噴淋頭部68與身爲下部電極 置台84的雙方處，係成爲能夠分別藉由各別之電源 加高頻電力。 此情況中之吸盤用開關部1 24以及旁通用開關部 φ 之開閉操作，係與在圖2中所作了說明的情況爲相同 此第5實施型態之情況中，亦與先前之第1實施型態 況相同，能夠將當對吸盤電極1 1 4施加直流電壓時以 施加於吸盤電極114處之直流電壓遮斷時的吸盤等價 之時間常數縮小，其結果，能夠將對於吸盤電極1 1 4 荷的積蓄以及電荷的放出分別迅速地進行，而能夠提 品之生產性，並使產率提升。另外，在此第5實施型 ，亦可設爲並不設置連接於載置台84處之高頻電源 0 亦包含匹配電路90)而將其省略。 〈對於吸盤電極之電位變化的評價〉 於此，係針對從開始對於吸盤電極1 1 4之電壓施 起直到吸盤電極114到達設定電壓爲止的時間，而使 電極之面積（載置台之面積）作變化並進行了模擬， ，針對該模擬之評價結果作說明。 圖9 ’係爲展示從對於吸盤電極之電壓施加開始 到到達設定電壓爲止的時間與載置台面積之間的關係 另外 頻率 型態 之載 來施 110 。在 的情 及將 電路 之電 升製 態中 92 ( 加後 吸盤 因此 起直 之圖 -33- 201009997 。於此，作爲評價之對象，係舉出有：圖1中所示之第1 實施型態（將濾波電阻變更爲線圈+直流成分檢測電路之 旁通）、圖5中所示之第2實施型態（直流成分檢測電路 之旁通）、以及圖7中所示之第4實施型態（將濾波電阻 變更爲線圈）。又，作爲比較例，亦針對圖1 6中所示之 先前技術之裝置而作了評價。 圖9(A)，係展示直到到達設定電壓爲止之到達時 間，圖9 ( B )，係展示當以先前技術之裝置之到達時間 爲基準時，各到達時間之縮短比例。於此，係將載置台面 積（与吸盤電極面積）從0.2 m2〜8.7 m2而作了各種的變化 。另外，對於吸盤電極114之施加電壓，係設定爲3 00 0 V 〇 如圖9(A)中所示一般，若是以使載置台面積從 0_2m2而至8.7m2地逐漸變大的方式來作設定，則直到到 達設定電壓爲止的到達時間，亦係逐漸的變長。此係因爲 ，在吸盤電極與載置台之間所形成的電容成分係逐漸的變 大之故。 於此，若是針對載置台面積係爲相同之情況下的各實 施型態作檢討，則例如當載置台面積爲8.7m2的情況時， 到達時間係成爲：第1實施型態爲13.5 sec、第2實施型 態爲 29.5sec、第 4實施型態爲 44.3sec、比較例則爲 58.3sec。故而，到達時間之縮短效果爲良好的順序，係成 爲第1實施型態、第2實施型態、第4實施型態之順序， 而能夠理解到，第1實施型態係最爲優良。此點，對於載 -34- 201009997 置台面積爲〇.2m2〜8.7m2之所有的情況，均爲符合。 於此’如圖9(B)中所示一般，若是注目於以先前 技術之裝置之到達時間作爲基準的各到達時間之縮短比例 ，則係無關於載置台之面積，而在各實施型態之每一者中 分別成爲一定。亦即是，第1實施型態之縮短比例，係無 關於載置台面積，而爲23〜25%，第2實施型態之縮短比 例，係無關於載置台面積，而爲5 1〜5 3 %，第4實施型態 0 之縮短比例，係無關於載置台面積，而爲76〜78%。 故而，如上述一般，到達時間之縮短比例，由於係無 關於載置台面積（#吸盤電極面積）而爲略一定，因此， 若是載置台之面積越大的電漿處理裝置，則所縮短之時間 亦成爲越大。其結果，可以理解到，若是將本發明適用在 對於縱橫爲例如3mx3m程度之大小的大面積之玻璃基板 進行電漿處理的電漿處理裝置中，則係能夠使上述到達時 間之縮短效果成爲非常大。 〈第6實施型態〉 接下來，針對本發明之載置台機構的第6實施型態作 說明。圖10，係爲展示本發明之載置台機構的第6實施形 態之重要部位的構成圖。另外’針對與先前之實施型態相 同之構成部分，係附加相同之參考符號’並省略其說明。 在先前之各實施型態中，直流高壓電源120之輸出電 壓，例如係爲3kV而爲一定’但是’係並不被限定於此’ 而亦可設爲能夠施加使切換輸出成爲可能的複數種類之直 -35- 201009997 流電壓。而後’係亦可設爲：當將電荷積蓄在吸盤電極 114中的情況時’最初係施加高電壓之直流電壓，並在一 段時間後作切換’而施加通常之較低電壓的直流電壓，以 將對於吸盤電極之電荷的積蓄（充電）迅速的來進行。 圖1 〇，係展示此種第6實施型態之重要部位。如圖 10中所示一般，在此第6實施型態中，直流高壓電源120 ，係被設爲可切換而成爲能夠輸出複數種類之直流電壓並 作施加。於此’此直流高壓電源1 2 0，例如係使輸出電壓 成爲可變，並成爲例如能夠在3kV〜5kV之範圍內而輸出 各種之電壓的直流電壓。具體而言，於此，係如同後述一 般，使用身爲吸盤電極114之通常施加時的額定電壓之 3kV、和較此爲更高之電壓的5kV。 又，在此第6實施型態中，係具備有：電位監測部 150，其係存在於給電線116之途中的藉由電阻元件160 所構成之濾波部1 1 8與吸盤用開關部1 24之間，並用以將 吸盤電極1 1 4側之電位檢測出來；和電源控制部1 5 2，其 係根據該電位監測部1 5 0之輸出値，來對上述直流高壓電 源1 2 0作控制。 上述電位監測部1 5 0，係爲藉由電阻元件等所形成， 由於將吸盤電極1 1 4之電位直接性地檢測出來一事係爲困 難，因此，於此係介在設置於濾波部118與吸盤用開關部 124之間的給電線1 16處。故而，在此電位監測部150處 之檢測値，係無法避免的而會產生有在此下流側（吸盤電 極114側）之濾波部118處的電壓下降量之誤差。另外， -36- 201009997 在實際之裝置中’雖然會成爲需要大幅度的設計變更，但 是’亦可將此電位監測部150設置在較濾波部118而更爲 下流側之給電線1 1 6的途中，於此情況，係能夠將濾波部 118之電壓下降的誤差量消除。 又’上述電源控制部1 52，係當從上述開關控制部 112而使吸盤用開關部124被關閉時，接收其之確認訊號 ’並當從上述電位監測部1 5 0所送來之檢測値成爲特定之 φ 値時，成爲從高電壓之第1直流電壓（例如5kV)而切換 至低電壓之第2直流電壓（例如3kV)並作輸出。 接下來，針對上述第6實施型態之動作作說明。首先 ’在具體之動作說明之前，先針對圖10中之點P1處的電 位之變化、亦即是當最初對吸盤電極1 1 4施加高電壓、並 於其後而切換至低電壓時的上述電位監測部150之電位之 變化作說明。圖11，係爲對於將直流電壓施加於吸盤電極 後之身爲電位監測部的點P 1之電位的變化作展示之圖表 φ ’圖11(A)，係以實線來表示當施加了 3kV之一定的直 流電壓的情況時之變化，圖11(B)，係以實線來展示當 僅在最初之些許的期間中施加5 kV之直流電壓，再於其後 而切換至3 kV並作施加的情況時之變化。於此，作爲吸盤 電極1 14之特性，其大小，係爲縱橫3 mx3 m之大小，而 額定電壓係爲3kV。又，在圖11中，係將吸盤電極ι14 之電位的經驗性之預測値藉由1點鍊線來作展示。 如圖11(A)中所示一般，當從最初起便對吸盤電極 1 14而以3kV來施加了一定之直流電壓的情況時，隨著電 -37- 201009997 荷之積蓄在吸盤電極114處，點P1之電位係依循於該電 路之時間常數而逐漸上升，並耗費某種程度的時間而到達 3kV並安定化。於此，直到到達與吸盤電極114之額定電 壓相同的3kV爲止，係需要15sec左右之時間。又，將施 加電壓同樣設爲3kV，當吸盤電極1 14之大小爲縱橫2.2m x2.5m的情況時，係爲9.8sec，當爲縱橫2.0mx2.3m的情 況時，係爲8.0sec。 相對於此，如圖1 1 ( B )中所示一般，對於吸盤電極 114，最初僅於特定之期間T4中來施加身爲較吸盤電極 114之額定電壓爲更高之電壓的直流電壓（第1直流電壓 )之5kV，不久後則施加身爲低電壓之直流電壓（第2直 流電壓）之3kV的情況時，點P1之電位，係較圖11(A )之情況而更爲急遽的上升，而後，在切換之前一刻，成 爲例如4kV左右之峰値，在經過特定之期間T4後，藉由 被切換至低電壓一事，點1之電位係在經過了峰値後逐漸 的下降，而到達3kV並安定化。 於此，若是對吸盤電極1 1 4之電位作注目，則可以得 知，當點P1之電位爲4kV左右時，吸盤電極114之電位 係到達了身爲額定電壓之3kV，此時，藉由切換至3kV之 直流電壓，吸盤電極114之電位係能夠保持該狀態地而維 持在3kV處。在此第6實施型態中，係使用上述般之特性 而成爲將吸盤電極114之電位的上升更迅速地進行。 接下來，針對使用有上述圖11中所示之特性的此第6 實施型態之動作作說明。圖1 2，係爲對於各開關部之切換 -38- 201009997 的時序與電位監測部1 5 0之電位以及吸盤施加電壓 作展示的時序圖，圖13’係爲用以對於在第6實施 之動作作說明的流程圖。 於圖12中’圖12(A)之吸盤用開關部124 動作、旁通用開關部1 1 〇的開閉動作、圖1 2 ( C ) 電極114的電位、圖12(D)之高頻電力的施加 係分別與圖2中所示之情況爲相同。而，在圖12 0 ，係展示藉由電位監測部1 5 0所檢測出了的電位， F)，係展示藉由直流高壓電源120所輸出之吸盤 壓。 首先，開關控制部1 1 2，係經由將設置於旁通 之途中的旁通用開關部110關閉，而將載置台84 (S1)。接著，開關控制部112，係經由將設置在 116之途中的吸盤用開關部124關閉，而藉由直流 源1 20來對於吸盤電極1 1 4而開始第1直流電壓（ φ 身爲高電壓之直流電壓的5kV )之施加（S2 )。另 可將步驟S1與S2同時進行。 從此時間點起，而成爲進入至先前於圖11中 一般之狀態。亦即是，藉由5kV之施加，對於吸 114係急速地進行有充電，而其之電位係成爲急遽 。另外，開關控制部1 1 2，當將吸盤用開關部1 24 閉時，係將此事通知給電源控制部1 52，此事，係 止電源控制部1 5 2之誤動作而進行者。 接著，藉由設置在給電線116之途中的電位 之變化 型態中 的開閉 之吸盤 狀況， (E )中 圖12 ( 施加電 線 108 作接地 給電線 高壓電 亦即是 外，亦 所說明 盤電極 的上升 作了關 爲了防 監測部 -39- 201009997 150所檢測出來之電位，係被輸入至電源控制部152處， 此電源控制部1 52，係判斷藉由上述電位監測部1 50所檢 測出了的電位是否到達了預先所制訂之特定値、例如判斷 是否到達了 4kV，並進行待機，直到到達了 4kV爲止（S3 之NO)。於此，若是到達了 4kV ( S3之YES )，則對直 流高壓電源120作控制，並從第1直流電壓（5kV)而切 換至較此爲更低之電壓的第2直流電壓（3kV)並作施加 (S4)。此3kV，係爲吸盤電極114之額定電壓。此時之 吸盤電極112的電位，係如同圖11中所說明一般而爲額 定電壓之3kV左右，故而，係能夠更加迅速地而充電至額 定電壓。 又，於此，施加 5 k V之直流電壓的期間T4，係如同 在圖11中亦有所說明一般，作爲結果，係成爲4sec左右 。另外，不用說，此4sec之時間，係會隨著靜電吸盤86 之大小或是第1直流電壓之大小等而改變。 如此這般，在切換至第2直流電壓後，係待機直到在 載置台84處之電位成爲安定爲止的特定之時間T5、例如 待機5〜lOsec左右之期間（S5之NO)，而若是進行了上 述特定之時間T5的待機（S5之YES )，則接著經由將旁 通用開關部1 1 〇設爲開狀態，來切斷載置台84之接地（ S6 )。上述特定之時間T5，係如同上述一般，爲直到上 述載置台84之電位成爲安定爲止所需要的時間。而後， 接下來係成爲對載置台84施加從高頻電源92而來之高頻 電壓（S7)，並進行電漿處理。 -40- 201009997 如此這般，在此第6實施型態中，在將電荷積蓄於吸 盤電極1 1 4處（充電）時，由於係設爲：最初係施加高電 壓之第1直流電壓（例如5kV)，不久後，施加較上述第 1直流電壓爲更低之電壓的第2直流電壓（例如3kV)， 因此，能夠更迅速地進行對於吸盤電極114之充電。於圖 12(C)中，係藉由1點鍊線，而展示圖2(C)之情況時 的吸盤電極1 1 4之電位的變化，相較於圖2 ( C )之情況 φ ，係能夠縮短l〇sec左右的而更迅速地使對於吸盤電極 114之充電結束。另外，此第6實施型態，除了並未設置 有旁通線108之圖7的第4實施型態以外，係可適用在先 前之第1〜第3以及第5之所有的實施型態中。 〈第7實施型態〉 接下來，針對本發明之載置台構造的第7實施型態作 說明。圖14，係爲展示本發明之載置台構造的第7實施形 φ 態之重要部位的構成圖。另外，針對與先前之第6實施型 態相同之構成部分’係附加相同之參考符號’並省略其說 明。 在圖10所示之第6實施型態中，係在給電線116之 途中設置電位監測部150 ’且電源控制部152係參考此檢 測値而進行了所施加之直流電壓的切換’但是’係並不被 限定於此，在此第7實施型態中’係在將上述吸盤用開關 部1 24設爲了閉狀態後’對時間作計測’並在經過了 —定 的時間時，對所施加之直流電壓作切換。 -41 - 201009997 亦即是，如圖14中所示一般，於此，在給電線116 處’係並不設置圖10中所設置之電位監測部150，代替此 ，係使電源控制部152具有計時功能（未圖示），並成爲 將從開關部控制部112而接收到了將吸盤用開關部124作 了關閉之通知的訊號時作爲起點，來藉由上述計時功能而 對經過時間作測定。而後，對於此計時功能處之計測時間 係經過了特定之時間一事作回應，此電源控制部1 52，係 成爲對於直流高壓電源120而發出從第1直流電壓（5kV )而切換至第2直流電壓（3kV)並作輸出之指令》 於此，上述之用以進行切換之特定的時間，係爲從開 始對於吸盤電極114而施加第1直流電壓起直到此吸盤電 極114之電位到達額定電壓爲止的期間以下之長度，於此 ，如同由圖11中所示之圖表所求取出一般，上述特定的 期間，例如係被設定爲4sec。此4sec之時間，係亦可藉 由將濾波部118以感應元件來構成一事，而更進一步的縮 短，且此一時間，如同前述一般，係成爲亦會隨著吸盤電 極114之大小或是第1直流電壓之大小等而改變，又，上 述特定的時間之設定，係成爲可變。 此第7實施型態之動作，係僅有在圖1 3所示之第6 實施型態的流程圖之步驟S3中，代替電位監測部150之 檢測値的判斷，而進行有對於在將吸盤開關部1 24關閉後 是否經過了特定的時間（例如4sec)—事作判斷之點上成 爲相異，其他之各步驟，係與圖13中所示之流程圖爲相 同。又，各開關部之切換的時序、或是各電壓之變化的態 •42- 201009997 樣，亦係與圖13中所示之時序圖爲相同。另外，此第7 實施型態，除了並未設置有旁通線1〇8之圖7的第4實施 型態以外，係可適用在先前之第1〜第3以及第5之所有 的實施型態中。 另外，在圖10以及圖14所示之第6以及第7實施型 態中，作爲直流高壓電源120，雖係使用有能夠使輸出電 壓作變化之可變電源，但是，代替此，係亦可如同圖1 5 φ 中所示之直流高壓電源之變形例一般，將輸出第1直流電 壓（例如5kV)之第1電源部15 4A與輸出第2直流電壓 (例如3kV )之第2電源部154B作並聯設置，並藉由以 電源控制部所控制之開關部1 56，來對此些之2個的電源 部154A、154B作切換，並使其進行輸出。於此，上述之 5kV以及3kV，係僅分別單純爲對其中一例作展示，不用 說，本發明係並不被限定於此些之數値。 又，在上述圖10以及圖14所示之第6以及第7實施 φ 型態中，係爲了使對於本發明之理解成爲容易，而將開關 控制部1 12與電源控制部152分開作設置，但是，不用說 ，亦可將此些作一體化並設置之。 另外，在以上之各實施型態中，作爲電漿處理，雖以 電漿蝕刻處理爲例而作了說明，但是，在具備有靜電吸盤 並經由高頻電力來產生電漿而進行電漿處理之所有的電漿 處理裝置中，均可適用本發明。又，在以上之各實施型態 中，於載置台84處，係並未設置加熱手段，但是，亦可 在此載置台84處，作爲加熱手段，而設置例如電阻加熱 -43- 201009997 器，並將被處理體加熱至特定的溫度。 又’於此，作爲被處理體，雖係以身爲絕緣物之液晶 顯示裝置用的玻璃基板爲例而作了說明，但是，係並不被 限定於此，而亦可對於陶瓷基板等之其他的絕緣物之基板 、或者是半導體晶圓（半導體基板）來適用本發明。 【圖式簡單說明】[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 08-031918 (Patent Document 3) JP-A-2002-043402 (Patent Document 3) However, when the object to be processed is sucked, the battery is accumulated in the chuck electrode 34 of the electrostatic chuck 12, and the electrostatic force is sufficiently raised and stabilized, or when the plasma treatment is finished. In the period from the time when the application of the high-frequency power is stopped and the electric charge accumulated in the electrostatic chuck 12 is released and stabilized, the surface area of the chuck electrode 34 is inevitably consumed. This is because the chuck equivalent circuit is provided with a time constant due to the resistance of the resistors 26, 28, 44 or between the chuck electrode 34 and the stage 10. In this case, when the diameter of the semiconductor substrate is smaller than 6 吋 and 8 ,, there is no particular problem, but 'if the diameter size is 12 吋 (300 mm) or more] The time until the sufficient charge is accumulated at the chuck electrode 34 (charge accumulation time) when sucked by the treatment body of -8-201009997, or accumulated in the chuck electrode 34 when the plasma treatment is finished In the time until the electric charge is sufficiently discharged (charge discharge time), it takes a considerable amount of time, and therefore, the productivity of the product is lowered, and there is a problem that the yield is lowered. In particular, when the system to be processed is a glass substrate of a liquid crystal display device, the size of the glass substrate is remarkable, and a large glass substrate having a length of 3 m x 3 m is also present, and such a large glass substrate is used. In this case, the above-described charge accumulation time or charge discharge time is required to be about 50 to 60 seconds, respectively, and there is a problem that a large yield reduction cannot be avoided. The present invention has been made in view of the above problems and has been creators in order to effectively solve the problem. It is an object of the present invention to provide a time constant for reducing the time constant of a chuck equivalent circuit when a DC voltage is applied to a chuck electrode and a DC voltage applied to a chuck electrode is blocked. The storage of the charge of the chuck electrode and the release of the charge are rapidly performed, respectively, to improve the productivity of the product, and to increase the productivity of the stage mechanism, the plasma processing apparatus using the same, and the voltage application method to the electrostatic chuck . [Means for Solving the Problem] The invention of claim 1 is a mounting table mechanism which is installed in a processing container capable of performing vacuum evacuation, and uses a plasma generated by high-frequency power. The object to be processed to which the specific plasma treatment is applied is a mounting table mechanism mounted on -9-201009997, characterized in that the object to be processed is placed and the guide is placed on the upper surface of the mounting table to be sucked. The inside of the chuck is provided with a suction cup for applying an electrostatic force to the suction cup electrode: and the suction cup is used for the supply of the electric wire, and the DC component detection circuit is a DC applied to the mounting table. a component mounting table; and a bypass line, wherein the front and the side common switch portions are connected to each other when the suction switch portion is switched, the DC detecting circuit is used; and the switch control unit is paired In this way, the universal disk switch is turned on next to the mounting table mechanism and the DC voltage bypass is applied to the chuck electrode, and the mounting portion is grounded, and the application is applied to the suction system to cause the DC detecting circuit. Since the bypass is closed, the time constant of the circuit to be applied to the electrode of the chuck is reduced, and the accumulation of charge and the productivity of the discharge of the charge are obtained, and the yield can be provided. There is: a mounting table formed by an electric component; and an electrostatic chuck, and in order to use the object to be processed as an electrode; and a DC high-voltage power source, a voltage is connected to the switch via a power supply line, and is disposed in the When the pretreatment body is sucked, it is closed and detected during the plasma processing, and is connected to the DC component detecting circuit to bypass the bypass line, and is in a closed state. And switching to an open bypass, and grounding the aforementioned mounting portion to the switch portion for control. When the switch portion of the chuck is closed, the DC detection circuit is turned off as a switch portion, and when the DC voltage of the chuck electrode is blocked, the DC of the chuck is applied to the ground of the chuck. When the DC voltage is interrupted, the suction cup is equivalent, and it is possible to quickly carry out the suction electrode and raise the lift. In the invention of the first aspect of the invention, there is provided a filter unit comprising: a filter unit interposed in the middle of the power supply line, and invading the high-frequency power In the above-mentioned DC high voltage power supply, one thing is prevented. According to the invention of claim 2, in the invention of claim 2, the filter unit is characterized in that the filter unit is formed of a resistor element or a resistor element and a capacitor element. According to the invention of claim 2, in the invention of claim 2, the filter unit is characterized in that the filter unit is formed of an inductive element or an inductive element and a capacitive element. The invention according to any one of the first to fourth aspects of the invention, wherein the DC component detection circuit is connected to the mounting table via a detection line. In the invention according to any one of the first to fifth aspects of the invention, the switch control unit is configured to switch the shutter switch unit to the closed state. The control is performed in the same manner as the switching or the switching of the bypass common switching unit to the closed state. According to the invention of the invention of the present invention, the switch control unit is characterized in that the switch control unit is switched to the closed state after the switch unit is opened from the open state. At the time of the time, the bypass type common switch unit is switched to the on state to perform control. In the invention according to any one of the first to seventh aspects of the invention, the switch control unit is configured to switch the suction switch unit of -11 - 201009997 to an open state. The control is performed such that the bypass switch unit is switched to the open state at the same time as the switching or after a specific time has elapsed after the switching. According to a third aspect of the invention, the switch control unit is characterized in that the switch control unit is configured to switch from the closed state to the open state after the switch unit is closed. At the time of the time, the bypass type common switch unit is switched to the on state to perform control. The invention of claim 1 is a mounting table mechanism that is disposed in a processing container that can be vacuum-exhausted, and is applied with a specific plasma treatment using plasma generated by high-frequency power. The mounting table mechanism for mounting the object to be processed is characterized in that: the mounting table is provided to mount the object to be processed and is formed of a conductive member; and the electrostatic chuck is disposed in the load The top surface of the table is provided with a chuck electrode inside for absorbing the object to be processed, and a DC high voltage power source for applying a DC voltage generated by an electrostatic force, and is provided with high frequency power via the way. The input and output of the filter unit for preventing the filter unit is connected to the chuck electrode; and the switch unit for the suction cup is placed in the middle of the feed line, and is closed when the object to be processed is sucked. And a DC component detecting circuit connected to the mounting stage for detecting a DC component applied to the mounting stage during the plasma processing; A control unit, based on the switch portion for controlling the chuck, the filter unit, the system does not contain a resistor element is set to be formed by the capacitance element and the dielectric member. The invention according to any one of the preceding claims, wherein the DC high-voltage power supply is switchable and capable of applying a plurality of types. Further, the stage mechanism further includes: a potential monitoring unit that is disposed in the middle of the power supply line and monitors a potential of the suction cup electrode side; and a power supply control unit for the suction cup When the switch unit is turned off, the first DC voltage of the high voltage in the plurality of types of direct current voltages is applied, and when the detection level of the potential monitoring unit becomes specific, 0 is switched to the second of the low voltage. In the invention of claim 11, the invention of claim 1 is characterized in that the DC high-voltage power supply is switchable and capable of applying a plurality of types. a DC voltage, the mounting table mechanism further comprising a power supply control unit for controlling the DC high voltage power supply, wherein the power supply control unit is configured to In the above-described manner, when the switch unit for the suction cup is closed, the first DC voltage of the high φ voltage in the plurality of types of DC voltages is first applied, and when a specific time has elapsed, the operation is switched to The second DC voltage of the low voltage is applied. The invention of claim 1 is characterized in that, in the invention of any one of claims 1 to 10, the specific time is such that the application of the first DC voltage is started from the chuck electrode. The length from the later to the period until the potential of the chuck electrode reaches the rated voltage. The invention according to any one of claims 11 to 13, wherein the first DC voltage is set to be higher than a rated voltage of the chuck electrode by 13-201009997. The second DC voltage is set to the rated voltage. The invention of claim 11 is characterized in that the DC high voltage power supply is configured to be capable of outputting the first DC voltage and the second DC voltage. The output voltage is set to be variable. The invention of any one of the first to fourth aspects of the invention, characterized in that the first high-voltage power supply includes a first power supply unit that outputs the first DC voltage, and The second power supply unit that outputs the second DC voltage is output. The invention according to any one of claims 1 to 16, wherein the object to be processed is an insulator. The invention of claim 18 is a plasma processing apparatus which is a plasma processing apparatus which applies a specific plasma treatment to a target object, and is characterized in that it is provided with a processing container for enabling vacuum discharge And a gas introducing means for introducing a necessary gas into the processing container; and a means for exhausting the vacuum in the processing container; and as in any one of claims 1 to 17 The mounting stage mechanism is for placing the object to be processed in the processing container. The invention of claim 18, wherein the gas introduction means is formed by a shower head, and the shower head and the mounting table are provided by the shower head The mounting stage of the mechanism is formed by forming a parallel plate type upper electrode and a lower electrode. The invention of claim 19 is characterized in that, in the invention described in claim 19, the invention is characterized in that the invention is characterized in that the high frequency power supply 〇 application 21 is connected to the mounting table. In the invention according to any one of the items 18 to 20, the second high frequency power source is connected to the shower head. The invention of the invention of claim 18, wherein the object to be processed is a semiconductor substrate or an insulator substrate. The invention of claim 23 is a method of applying a voltage to an electrostatic chuck, which is a method of applying a voltage to an electrostatic chuck provided at a mounting table, the mounting table being disposed to be vacuum ventilated. The treatment container is placed in the processing chamber, and the object to be treated by the plasma treatment is placed, and the high-frequency voltage is applied. The voltage application method is characterized in that the suction electrode of the electrostatic chuck is applied. a plurality of first DC voltages of a high voltage in a straight φ current voltage, and simultaneously or simultaneously before application of the first DC voltage, grounding the mounting table from the first DC When a certain period of time has elapsed since the start of the application of the voltage, the second DC voltage that is lower than the first DC voltage is applied and applied, and the specific DC voltage is changed from the switching to the second DC voltage. At the time of the time, the ground of the mounting table is cut, and the ground of the mounting table is cut, and the invention is applied to the mounting table. Item 23 of the invention application, there is provided -15-201009997 the following characteristics: from the start of the first DC voltage applied to the sum of a specific time, the system pre-established. According to the invention of claim 23, in the invention of claim 23, the first time from the start of the application of the first DC voltage is that the first time is started from the chuck electrode The length of the period from the application of the DC voltage to the period until the potential of the chuck electrode reaches the rated voltage. The invention according to any one of claims 23 to 25, wherein the specific time from switching to the second DC voltage is until the mounting stage The time until the potential becomes stable. [Effects of the Invention] According to the stage mechanism of the present invention, the plasma processing apparatus using the same, and the voltage application method to the electrostatic chuck, the following general effects can be exhibited. According to the present invention, when the suction switch unit is closed and the DC voltage is applied to the chuck electrode in the stage mechanism, the DC component detection circuit is bypassed, and the common switch portion is closed to the ground of the mounting table. Further, when the switch portion for the chuck is opened and the DC voltage applied to the chuck electrode is blocked, the DC switch detecting circuit is bypassed, and the common switch portion that is grounded to the mounting table is closed. When the DC voltage is applied to the chuck electrode and when the DC voltage applied to the chuck electrode is interrupted, the time constant of the chuck equivalent circuit is reduced, and as a result, the charge of the chuck electrode of -16-201009997 can be accumulated and The release of charge is rapidly carried out to improve the productivity of the product and increase the yield. [Embodiment] Hereinafter, one of the embodiments of the stage mechanism, the plasma processing apparatus using the same, and the voltage application method to the electrostatic chuck of the present invention will be described in detail based on the attached drawings. . <First Embodiment> Fig. 1 is a configuration diagram showing a first embodiment of a plasma processing apparatus using the stage mechanism of the present invention. Here, as a plasma treatment, a case where a plasma etching treatment is applied to a glass substrate will be described as an example. As shown in Fig. 1, in general, the plasma processing apparatus 50 is provided, for example, with a processing container 52 made of an aluminum alloy, and the processing container 52 is connected. At the side wall of the processing container 52, an opening 54, which is used to pass the object to be treated W, is formed at this opening 54, and a gate valve 56 which is hermetically opened and closed is attached. Further, at the periphery of the bottom of the processing container 52, an exhaust port 58 is provided, and at this exhaust port 58, an exhaust means 60 for evacuating the inside of the processing container 52 is provided. Specifically, the exhaust means 60 is provided with an exhaust line 62 connected to the exhaust port 58, where the exhaust line 62 is sequentially provided with a pressure regulating valve 64 and a vacuum Pu 66, and became able to maintain a specific pressure on the side of the processing container 52 as a vacuum -17- 201009997. Further, at the top of the processing container 52, as a gas introducing means for introducing a necessary gas into the processing container 52, a shower head 68 made of, for example, an aluminum alloy is provided. At the upper portion of the shower head 68, a gas inlet 70 is provided, at which a gas source 74 is connected via a gas line 72. On the way of the gas line 72, a flow controller 76, which is provided with a mass flow controller, is provided, and a necessary gas (e.g., etching gas) is flowed while controlling the flow rate. Further, a plurality of gas ejection holes 78 are formed in the gas ejection surface on the lower surface of the shower head 68, and the supplied gas ' is supplied toward the processing space S below. Further, in the processing container 52, the stage mechanism 80 of the present invention is provided so as to face the shower head 68. Specifically, the mounting stage mechanism 80 is mainly made of a conductive material such as aluminum or the like which is provided at the bottom of the processing container 52 via an insulating material 82 made of a ceramic material such as alumina. The mounting table 84 is constituted by an electrostatic chuck 86 provided at the upper side thereof. On the electrostatic chuck 86, for example, a glass substrate W for a liquid crystal display device is placed as a target object, and the glass substrate W can be absorbed by electrostatic force. Here, the size of the glass substrate w is set to have a size of, for example, about 3 mx3 m in both vertical and horizontal directions, and is extremely large. Here, as the above-mentioned conductive material, for example, in addition to a metal such as aluminum, an alloy such as stainless steel or carbon may be used, and a composite material such as a <18-201009997 may be used. In this manner, the shower head 68 and the mounting table 84 are disposed to face each other, and constitute the upper electrode and the lower electrode, respectively, and become a parallel plate type plasma electrode. Specifically, at the mounting table 84, a high-frequency line 88 is connected, at which the high-frequency line 88 is sequentially provided with a matching circuit 90 and, for example, 13. A high frequency power supply 92 of 56 MHz is used to generate plasma by high frequency power. Further, on the mounting table 84, a DC component detecting circuit 96 is provided via the detecting line 94. Alternatively, the detection line 94 may be divided and disposed by the downstream side of the matching circuit 90 disposed at the high frequency line 88. The DC component detecting circuit 96 is configured such that the high frequency cut-off coil 98, the first resistor 100, and the second resistor 102 are connected in series in the detection line 94, and is configured by the high-frequency cutoff. The junction between the line 98 and the first resistor 100, the capacitor 104 is divided, and the other end is grounded. Then, the voltage drop of the second resistor 102 is measured by the measuring unit 106 φ, and the DC component of the mounting table 84 in the plasma processing can be detected and recognized. Then, the high frequency power from the mounting table 84 is cut off by the coil 98 for the high frequency cutoff and the capacitor 104. Further, the DC component detecting circuit 96 has a function of discharging the charges charged by the chuck electrode 86 and the mounting table 84 when the application of the high-frequency power is stopped after the electric blade processing is completed. Further, at the detection line 94, a bypass line 1 which is a feature of the present invention which is connected to the upstream side and the downstream side of the above-described DC component detecting circuit 96 of the detection line -19-201009997 is provided. 8. On the other hand, in the middle of the side 108, the bypass switch unit 110 is provided, and if necessary, when the voltage applied to the electrostatic chuck 86 is normally turned ON or OFF as will be described later, When the switch unit 110 is closed, the mounting table 84 can be grounded without passing through a resistor or a coil. The control of the opening and closing operation of the bypass switch unit 11 is performed by the switch control unit 112. Further, the electrostatic chuck 86 is configured by, for example, embedding a chuck electrode 1 in a plate-shaped insulating material made of a polyimide or a ceramic. On the other hand, the chuck electrode 114 is extended with the power supply line 1 at the power supply line 116, and the DC high voltage power supply 120 is connected via the intrusion filter unit 118 for high frequency power. On the other hand, a high voltage generated from the DC high voltage power supply 120 is applied to the chuck electrode 114, whereby the electrostatically attracted glass substrate W is sucked by an electrostatic force. The output voltage of the DC high voltage 120 is, for example, about 3 kV, but it is not limited to this. The chopper portion 118 is configured by an inductive element and a coil 122 for high frequency interruption. Then, by the coil 112 for high-frequency interruption, the high-frequency power applied to the stage 84 is wound into the DC high-voltage power source 120, and is prevented. Further, at the downstream side of the filter unit 118 of the electric wire 116, when a suction cup for turning on and off the DC high-voltage power source 120 is provided, the direct current is directly applied to the grease or 14 and 16 The power supply of the disk 86 is limited to be used in the intrusion system to open the 201009997 section 1 2 4 . The control of the opening and closing operation of the shutter switch unit 14 is performed by the switch control unit 112. In addition, the control of the entire operation of the plasma processing apparatus 5, for example, the control of the process pressure, the start of the supply of the supply gas, the control of the supply stop, and the control of the application of the high-frequency power, are performed on the respective switch sections of the switch control unit 12. The instruction to open and close the operation is performed by the device control unit 126 formed by the computer. Further, a computer readable computer program necessary for the operation control is stored in the memory medium 128. The memory medium 128 is formed by a floppy disk, a CD (Compact Disc), a CD-ROM, a hard disk, a flash memory, or a DVD. Further, although not shown, the mounting table mechanism 80 is provided with a lift pin that receives the object to be processed when the object to be processed is carried in and out. Next, the plasma etching treatment using the plasma processing apparatus 5 constructed as described above will be described with reference to Figs. 2 and 3. φ Fig. 2 is a timing chart showing the relationship between the timing of switching between the chuck switch unit and the bypass switch unit and the timing of the potential of the chuck electrode and the application of the high frequency power, and Fig. 3 is shown on the stage. machine. A diagram of the equivalent circuit of a chuck for DC voltage at the electrostatic chuck. First, when the flow of the entire body is described, the glass substrate W which is the object to be processed is carried into the processing container 52 via the opened gate valve 56 and the opening 54, and is not shown. The lift pin is lifted and lowered to place the load on the mounting table 84, and the inside of the processing container 52 is sealed. -21 - 201009997 Then, when the glass substrate w is placed on the mounting table 84, the chuck switch portion 124 is closed, and a high DC voltage is applied to the chuck electrode 114 of the electrostatic chuck 86 from the DC high-voltage power source 120. At the chuck electrode 114, a voltage is sufficiently accumulated, and the glass substrate W is stably sucked by an electrostatic force. Here, when the shutter switch unit 124 is turned off, the bypass switch unit 11 is also placed in a closed state during a specific period. Then, if the suction is performed, high-frequency power is applied by the high-frequency power source 92, and a specific gas, for example, an etching gas, is flowed from the shower head 68, and is passed through the high-frequency power. A plasma is generated in the processing space S, and an etching treatment using a plasma is performed. Further, in the plasma processing, although the potential is generated by the action of the plasma generated in the processing space S, a current flows through the detecting line 94 via this potential. The potential flows through the coil 98 of the DC component detecting circuit 96, the first resistor 1〇〇, and the second resistor 102, and flows to the ground side. Then, the voltage drop generated when the current flows through the second resistor 102 is measured by the measuring unit 106, and the DC voltage of the mounting table 84 is detected. At this time, by the action of the coil 98 and the capacitor 1〇4, the high-frequency electric power applied to the mounting table 84 is swung and flows to the DC component detecting circuit 96 side, and is prevented. Further, similarly, by the action of the coil 122 for high-frequency interruption provided at the power supply line 116, the high-frequency power applied to the mounting table 84 is wound around and flows to the DC high-voltage power source 120. Be made to stop. -22- 201009997 Then, when the etching process is completed, the supply of the etching gas is stopped, and the high-frequency power applied to the mounting table 84 is blocked. Further, the chuck switch unit 124 is turned on, and the high DC voltage applied to the chuck electrode 114 of the electrostatic chuck 86 is blocked, and then stored in the chuck electrode 114 and the load via the DC component detecting circuit 96. The charge at station 84 is fully discharged. Here, when the chuck switch unit 124 is turned on, the bypass switch unit 110 is also set to be in a closed state for a specific period of time. On the other hand, if the discharge of the accumulated electric charge is completed, the glass substrate w is taken out. Here, in the plasma processing apparatus of the prior art, when the chuck switch portion 45 shown in Fig. 16 is closed and a high DC voltage is applied to the chuck electrode 34, the charge is accumulated in the chuck electrode 34 or the stage. In the time required for generating sufficient electrostatic force at 10 places (charge accumulation time), it takes a long time, and when the plasma processing is completed, the suction switch portion 45 is opened and accumulated in the chuck electrode 34 or It is a time (charge discharge time) required for the charge of φ at the stage 10 to be sufficiently discharged, and it takes a long time. However, in the case of the plasma processing apparatus 50 of the present invention, the charge can be accumulated. Time or charge discharge time is greatly reduced. In other words, when the suction switch unit 14 is switched from the open state to the closed state and from the closed state to the open state, the bypass switch unit 110 is disposed at the bypass line 108. In the specific period, it is maintained in a closed state, and the mounting table 84 is directly grounded without passing through the DC component detecting circuit 96 including the resistance component, and the resistance component of the chuck equivalent -23-201009997 circuit is as much as possible. The reduction. Specifically, when the switch control unit 112 switches the shutter control unit 124 to the closed state, the switch control unit 112 switches the bypass switch unit 110 to the same state as before or after the switch. The way the state is controlled. Further, when the switch control unit 1 12 is switched to the open state, the switch control unit 1 1 2 switches the bypass switch unit 110 to the same time as before or after switching. The state of the closed state is used for control. As a result, the time constant of the chuck equivalent circuit is reduced, so that the accumulation of the charge to the chuck electrode 114 or the mounting table 84 and the discharge of the electric charge can be quickly performed. Further, when the switch control unit 112 is switched from the open state to the closed state or from the closed state to the open state, the switch control unit 112 turns the bypass switch unit 1 when a specific time has elapsed. 1 〇 Controls by switching from the closed state to the open state. Here, the relationship between the timing of switching between the chuck switch unit 124 and the bypass switch unit 110, the potential of the chuck electrode H4, and the timing of application of the high-frequency power will be described with reference to Fig. 2 . As shown in FIG. 2, when the shutter portion switch 24 is switched from the open state to the closed state and from the closed state to the open state as shown in FIG. 2(A), as shown in FIG. 2 ( As shown in B), the bypass switch unit 110 is maintained in a closed state and the DC component detecting circuit 96 is bypassed in such a manner as to straddle the switching point, whereby the chuck is equivalent at this time. The time constant of the circuit is reduced. In this case, the switching of the bypass switch unit 11 is performed simultaneously with the switching of the opening and closing of the suction switch unit 124. However, after the suction switch unit 124 is switched to be closed at -24 to 201009997, Until at least a specific time T1 (see FIG. 2(C)), when the electric charge is sufficiently accumulated in the chuck electrode 114 or the mounting table 84 and the electrostatic force is stabilized, the closed state of the bypass switch unit 110 is maintained. The specific time T1, although depending on the area of the chuck electrode 114, is usually from several seconds to ten seconds. In the prior art device example, the charge is accumulated as it is charged by the chuck electrode φ 114. The potential of the mounting table 84 fluctuates. If a high-frequency voltage is applied in this state, an abnormal discharge may occur. However, in the present embodiment, since the high-frequency voltage is applied immediately before, the side is universally applied. Since the switch unit 110 is turned off and grounded, the potential of the mounting table 84 can be stabilized to the ground potential, and since the high-frequency voltage is applied in this state, the abnormal discharge can be generated. inhibition. In the same manner, after the suction switch unit 124 is switched on, the ❹ is until at least a specific time T2 until the electric charge accumulated in the chuck electrode 114 or the mounting table 84 is sufficiently discharged (refer to FIG. 2 (refer to FIG. 2 C)) 'The state in which the above-described bypass switch unit 110 is closed is maintained. Although the specific time T2' is also dependent on the area of the chuck electrode 114, it is usually from several seconds to ten seconds. Further, as shown in Fig. 2(D), the high-frequency electric power is applied to the mounting table 84 after the electrostatic force is stabilized. Further, in the plasma processing, the bypass switch unit 11 is turned on, the DC component detecting circuit 96 is activated, and the DC voltage of the mounting table 84 is measured. Here, a suction-cup equivalent circuit when the shutter switch unit 124 is opened and closed (the bypass switch unit 110 is also closed) will be described with reference to Figs. 3 and 4'. Fig. 3 is a view showing a suction-cup equivalent circuit with respect to a DC voltage at an electrostatic chuck of a stage mechanism. Fig. 4 is a view showing a change in potential of a chuck electrode. As shown in FIG. 3, in general, when the shutter switch unit 124 is opened and closed (the side switch unit is also in a closed state), the power of the DC high voltage power supply 1 20 and the resistance component R and the capacitance component C are obtained. The series electric circuit. Here, since the resistance component R is bypassed by the DC component detecting circuit 96, substantially only the resistance component of the coil 122 for high-frequency interruption provided in the power supply line 116 is extremely small. . Further, since the capacitance component C is determined by the area of the chuck electrode 114 and the area of the upper surface of the mounting table 84, depending on the size of the device, the size of the device is determined to be constant. Fig. 4(A) shows a state in which the shutter portion 124 is switched from open to closed, and Fig. 4(B) shows a state in which the shutter switch unit 124 is switched from closed to open. Further, in Fig. 4, for the sake of reference, the case of the prior art plasma processing apparatus is shown by a broken line. Here, the potential e(t) of the chuck electrode 114 is given by the following formula. e(t) = E[ 1 -e(-t/RC)] where 'e is the natural logarithm (exp ), rc is the time constant -26- 201009997, and t is the time. Compared with the plasma processing apparatus of the prior art, since the resistance component R becomes very small, the time constant "RC" becomes very small. Therefore, as shown in Fig. 4 (A) and Fig. 4 (B), in the case of the present invention, the transition time until the stability is stabilized is extremely short. When the size of the chuck electrode is set to be 3 mx3 m in the vertical and horizontal directions and the simulation is performed in 0 rows, as a result, in the case of the prior art device, the time L1 until the stabilization is about 60 seconds, whereas In the case of the present invention, the time L2 until the stabilization is about 1 sec., and it can be confirmed that the charge accumulation time and the charge discharge time can be shortened. Further, in the prior art plasma processing apparatus shown in Fig. 16, the resistance component is the resistance component of the first resistor 26, the second resistor 28, the resistor 44, and the coils 24 and 42, as compared with the present invention. The situation, the system _ became very big. Further, since the capacitance component C is set to be the same in size, the apparatus of the present invention is the same as the apparatus of the prior art. As described above, in the stage mechanism 80 of the present invention, when the shutter switch unit 124 is closed and a DC voltage is applied to the chuck electrode 114, the DC component detecting circuit 96 is bypassed and the mounting table 84 is grounded. The bypass switch unit 110 is turned off. Further, when the shutter switch unit 124 is turned on and the DC voltage applied to the chuck electrode 114 is blocked, the DC component detecting circuit 96 is bypassed and the mounting table 84 is grounded. The general purpose -27-201009997 switch portion 11 is closed, and therefore, the time constant of the chuck equivalent circuit when the DC voltage is applied to the chuck electrode 114 and when the DC voltage applied to the chuck electrode 114 is interrupted can be reduced. As a result, the accumulation of the electric charge to the chuck electrode 114 and the release of the electric charge can be quickly performed, respectively, and the productivity of the product can be improved, and the yield can be improved. Further, since the filter unit 118 for preventing high-frequency power from entering the DC high-voltage power source 120 is constituted only by the coil 122 for high-frequency interruption of the sensing element, compared with the prior art In the plasma processing apparatus, the resistance component R (refer to FIG. 3) at the chuck equivalent circuit can be reduced and the time constant can be further reduced. As a result, the charge accumulation time and the charge discharge time can be shortened. The yield is further improved. <Second embodiment> Next, a second embodiment of the stage mechanism of the present invention will be described. Fig. 5' is a view showing the configuration of an important portion of the second embodiment of the stage mechanism of the present invention. It is to be noted that the same reference numerals are given to the same components as those of the components shown in Fig. 1 and Fig. 16 and the description thereof will be omitted. In the first embodiment, the filter unit 118 connected to the DC high-voltage power source 120 is configured by the coil 122 for high-frequency interruption of the sensing element, and is configured to be bypassed by being disposed. The bypass line 108' of the switch unit 110 is configured to be able to bypass the DC component detecting circuit 96 when necessary. However, the present invention is not limited thereto, and the filter unit 118 of the above-described -28-201009997 may be used. 'The same configuration as the prior art device shown in Fig. 16 is set. That is, as shown in FIG. 5, the same as 'the filter unit 38 shown in FIG. 16' is used to connect the coil 42 for high-frequency interruption and the resistor 44 in series, and by two The filter unit 118 is formed by connecting the capacitors 46 so that the other ends are grounded. In this case, the opening and closing operation of the suction switch unit 1 24 and the bypass common switch unit 1 10 φ is the same as that described in FIG. 2 . In the case of the second embodiment, as in the case of the first embodiment, it is possible to interrupt the DC voltage applied to the chuck electrode 14 when a DC voltage is applied to the chuck electrode 1 14 As a result, the time constant of the chuck equivalent circuit is reduced, and as a result, the accumulation of the electric charge to the chuck electrode 1 14 and the release of the electric charge can be quickly performed, and the productivity of the product can be improved and the yield can be improved. However, compared with the case of the first embodiment, in the case of the φ state of the second embodiment, since the DC component (resistance 44) of the chopper portion 1 18 is increased, the time constant is also included. As a result, the charge accumulation time or the charge discharge time is slightly deficient in speed compared to the first embodiment. <Third embodiment> Next, a third embodiment of the stage mechanism of the present invention will be described. Fig. 6 is a view showing the configuration of an important portion of a third embodiment of the stage mechanism of the present invention. It is to be noted that the same reference numerals are given to the same components as those shown in Fig. 1, Fig. 5, and Fig. -29-201009997, and the description thereof will be omitted. First, in the second embodiment shown in FIG. 5, the filter unit 118 is configured to be the same as the device of the prior art shown in FIG. 16, but is not limited thereto, instead of the above filter. The resistor 44 at the portion 118 can also be provided with another high frequency cut coil 130 as shown in FIG. That is, in this case, the filter unit 118 is constituted by the coils 42 and 130 for high-frequency interruption of the induction element and the capacitor 46 as a capacitor. In this case, the high frequency system is cut off by the two coils 42 and 130 for high frequency cutoff. The opening and closing operations of the suction switch unit 124 and the bypass common switch unit 110 in this case are the same as those described in FIG. In the case of the third embodiment, as in the case of the first and second embodiments, it is possible to apply a DC voltage to the chuck electrode 1 14 and a DC voltage to be applied to the chuck electrode. The time constant of the chuck equivalent circuit at the time of the interruption is reduced, and as a result, the accumulation of the electric charge to the chuck electrode 114 and the release of the electric charge can be quickly performed, and the productivity of the product can be improved and the yield can be improved. However, in the case of the third embodiment, in the case of the third embodiment, since the resistor 44 of the filter unit 118 is a resistance component, the time constant is also reduced. As a result, compared with the second embodiment, the charge accumulation time or the charge discharge time can be made shorter. -30-201009997 <Fourth embodiment> Next, a description will be given of a fourth embodiment of the stage mechanism of the present invention. Fig. 7 is a view showing the configuration of an important portion of the fourth embodiment of the stage mechanism of the present invention. It is to be noted that the same reference numerals are given to the same components as those shown in Fig. 1, Fig. 5, and Fig. 16, and the description thereof will be omitted. In the third embodiment, the filter unit 118 connected to the DC high voltage power supply 120 is constructed by the coils 42, 130, which are used for the 0-frequency interruption of the sensing element, and the capacitor as the capacitive element. It is assumed that the bypass line 108 provided with the bypass common-purpose switch unit 1 10 0 can bypass the DC component detecting circuit 96 when necessary, and is not limited thereto, and may be as shown in FIG. 7 . Generally, the above-described bypass line 108 and the bypass switch unit 110 are not provided. In this case, the opening and closing operation of the suction switch unit 14 is the same as that described in 2. However, the common switch unit 110 of φ in Fig. 2(B) is in the fourth embodiment. In the case of the fourth embodiment, as in the case of the first embodiment, the DC voltage applied to the chuck electrode 114 when the DC voltage is applied to the chuck electrode 1 14 can be used. The time constant of the path such as the suction cup at the time of the interruption is reduced, and as a result, the accumulation of the electric charge to the chuck electrode 1 1 and the release of the electric charge can be quickly performed, and the productivity of the product can be improved and the yield can be improved. However, compared with the case of the third embodiment, in the case of the fourth embodiment, since the direct state of the DC component detecting circuit 96 is increased, the height 46 of the FIG. 6 is added, and Set to use in the illustration. The state and the valence of the valence 4 increase to -31 - 201009997 (resistances 100, 102), so the time constant also increases, and as a result, the charge accumulation time is compared with the third embodiment. Or the charge discharge time becomes a little lack of rapidity. However, in the case of the fourth embodiment, the same applies to the prior art device shown in Fig. 16 by replacing the resistor 44 at the filter portion 38 with the coil for high-frequency interception. 130, since the resistance component is reduced, as a result, the charge accumulation time or the charge discharge time can be shortened. <Fifth Embodiment> Next, a fifth embodiment of the stage mechanism of the present invention will be described. Fig. 8 is a structural view showing an important part of a fifth embodiment of the stage mechanism of the present invention. It is to be noted that the same reference numerals are given to the same components as those shown in Fig. 1 and the description thereof will be omitted. In the first to fourth embodiments, the shower head 68 which is the upper electrode is grounded. However, the present invention is not limited thereto, and the shower head 68 may be used. And apply high frequency power. Fig. 8 is a view showing the configuration of the case where high frequency power is applied to the shower head 68 by using the apparatus shown in Fig. 1, but the configuration described herein is applicable. In all of the embodiments of the first to fourth embodiments. That is, as shown in Fig. 8, in general, the shower head 68, which is a gas introduction means, is attached to the top surface portion of the processing container 52 via the insulating member 134. And at the shower head 68, a high-frequency line 136 is connected, and on the way of the high-frequency line 136 of -32-201009997, a matching circuit 138 is disposed, and a high-frequency power source 140 is connected to the end side. . As the high-frequency power source 140, for example, 450 kHz or the like can be used. As a result, in the fifth embodiment, both of the shower head 68 which is the upper electrode and the lower electrode mount 84 are capable of supplying high-frequency power by respective power sources. In this case, the opening and closing operation of the suction switch unit 14 and the bypass switch unit φ is the same as in the case of the fifth embodiment described in FIG. 2, and also in the first embodiment. In the same state, the time constant equivalent to the chuck when the DC voltage applied to the chuck electrode 114 is blocked when the DC voltage is applied to the chuck electrode 1 14 can be reduced. As a result, the chuck electrode 1 1 can be used. 4 The accumulation of the charge and the release of the charge are carried out rapidly, respectively, and the productivity of the product can be improved and the yield can be improved. Further, in the fifth embodiment, the high-frequency power source 0 connected to the mounting table 84 may be omitted, and the matching circuit 90 may be omitted. <Evaluation of Potential Change of Suction Cup Electrode> Here, the area of the electrode (the area of the mounting table) is made from the time when the voltage of the chuck electrode 1 14 is applied until the chuck electrode 114 reaches the set voltage. The changes were simulated and the evaluation results of the simulation were explained. Fig. 9' shows the relationship between the time from the application of the voltage to the chuck electrode to the arrival of the set voltage and the area of the stage, and the frequency type is applied. In the situation and the electric rise state of the circuit 92 (adding the rear suction cup and thus straightening the figure -33- 201009997. Here, as the object of evaluation, the first embodiment shown in Fig. 1 is cited. (Change the filter resistor to bypass of the coil + DC component detection circuit), the second embodiment shown in FIG. 5 (bypass of the DC component detection circuit), and the fourth embodiment shown in FIG. (The filter resistor is changed to a coil.) Further, as a comparative example, it is also evaluated for the prior art device shown in Fig. 16. Fig. 9(A) shows the arrival time until the set voltage is reached, Figure 9 (B) shows the shortening ratio of each arrival time when the arrival time of the prior art device is used as a reference. Here, the mounting table area (with the suction cup electrode area) is from 0. 2 m2~8. 7 m2 and made various changes. Further, the applied voltage to the chuck electrode 114 is set to 300 V. As shown in Fig. 9(A), the area of the mounting table is from 0 to 2 m2 to 8. When the 7m2 is gradually increased, the arrival time until the set voltage is reached is gradually lengthened. This is because the capacitance component formed between the chuck electrode and the mounting table is gradually increased. Here, if the respective types of implementations in the case where the mounting table area is the same are reviewed, for example, when the mounting table area is 8. In the case of 7 m2, the arrival time is: the first embodiment is 13. 5 sec, the second implementation type is 29. 5 sec, the fourth embodiment is 44. 3 sec, the comparative example is 58. 3sec. Therefore, the shortening effect of the arrival time is a good order, and it is the order of the first embodiment, the second embodiment, and the fourth embodiment, and it can be understood that the first embodiment is the most excellent. At this point, for the load -34- 201009997 set the area is 〇. 2m2~8. All cases of 7m2 are in compliance. In this case, as shown in FIG. 9(B), if the ratio of the shortening of each arrival time based on the arrival time of the prior art device is taken into account, the area of the mounting table is not related to each embodiment. Each of them becomes a certain one. In other words, the shortening ratio of the first embodiment is 23 to 25% irrespective of the mounting table area, and the shortening ratio of the second embodiment is 5 1 to 5 3 regardless of the mounting table area. %, the shortening ratio of the fourth embodiment type 0 is 76 to 78% irrespective of the mounting table area. Therefore, as described above, the shortening ratio of the arrival time is slightly constant regardless of the mounting table area (#sucker electrode area). Therefore, if the plasma processing apparatus having a larger area of the mounting table is shortened, the shortened time is obtained. It has also become bigger. As a result, it can be understood that the present invention can be applied to a plasma processing apparatus that performs plasma treatment on a large-area glass substrate having a size of, for example, about 3 mx 3 m. Big. <Sixth embodiment> Next, a sixth embodiment of the stage mechanism of the present invention will be described. Fig. 10 is a view showing the configuration of an important portion of a sixth embodiment of the stage mechanism of the present invention. Further, the same components as those of the previous embodiment are denoted by the same reference numerals, and the description thereof will be omitted. In the previous embodiments, the output voltage of the DC high-voltage power supply 120 is, for example, 3 kV, and is 'but' is not limited to this', and may be applied to a plurality of types that enable switching output. Straight-35- 201009997 Flow voltage. Then, the system can be set to: when the charge is accumulated in the chuck electrode 114, 'the DC voltage of a high voltage is initially applied, and the switching is performed after a period of time', and a DC voltage of a generally lower voltage is applied to The accumulation (charging) of the electric charge to the chuck electrode is performed quickly. Figure 1 shows an important part of this sixth embodiment. As shown in Fig. 10, in the sixth embodiment, the DC high-voltage power supply 120 is switchable so that a plurality of types of DC voltages can be output and applied. Here, the DC high-voltage power supply 120 is, for example, a variable output voltage, and is, for example, a DC voltage that can output various voltages in the range of 3 kV to 5 kV. Specifically, here, as will be described later, 3 kV which is a rated voltage at the time of normal application of the chuck electrode 114, and 5 kV which is a higher voltage are used. Further, in the sixth embodiment, the potential monitoring unit 150 is provided in the filter unit 1 18 and the chuck switch unit 14 which are formed by the resistor element 160 in the middle of the power supply line 116. And detecting the potential of the chuck electrode 1 1 4 side; and the power source control unit 152 controlling the DC high voltage power source 1 2 0 according to the output 値 of the potential monitoring unit 150 . The potential monitoring unit 150 is formed by a resistive element or the like, and it is difficult to directly detect the potential of the chuck electrode 1 14, and therefore, it is provided in the filter unit 118 and the chuck. The power supply line 16 between the switch portions 124 is used. Therefore, the detection 値 at the potential monitoring unit 150 causes an error in the amount of voltage drop at the filter unit 118 on the downstream side (the side of the chuck electrode 114) which is unavoidable. In addition, -36-201009997 "In the actual device, although a large design change is required, the potential monitoring unit 150 can be disposed on the downstream side of the power supply unit 1 16 which is closer to the filter unit 118. In the meantime, in this case, the amount of error in which the voltage of the filter unit 118 is lowered can be eliminated. Further, the power supply control unit 152 receives the confirmation signal 'when the suction switch unit 124 is turned off from the switch control unit 112, and detects the result from the potential monitoring unit 150. When it is a specific φ 値, it is switched from the first DC voltage (for example, 5 kV) of the high voltage to the second DC voltage (for example, 3 kV) of the low voltage, and is output. Next, the operation of the sixth embodiment will be described. First, before the specific operation description, the above-mentioned change of the potential at the point P1 in FIG. 10, that is, when the high voltage is initially applied to the chuck electrode 1 14 and then switched to the low voltage, The change in the potential of the potential monitoring unit 150 will be described. Fig. 11 is a graph showing the change in the potential of the point P 1 of the potential monitoring portion after applying a DC voltage to the chuck electrode, Fig. 11 (A), which is indicated by a solid line when 3 kV is applied. In the case of a certain DC voltage, Figure 11(B) shows the solid line as a DC voltage of 5 kV applied during only the first few periods, and then switched to 3 kV. Changes in the circumstances of the application. Here, as the characteristics of the chuck electrode 14, the size is 3 mx3 m in length and width, and the rated voltage is 3 kV. Further, in Fig. 11, the empirical prediction of the potential of the chuck electrode ι14 is shown by a one-dot chain line. As shown in Fig. 11(A), when a certain DC voltage is applied to the chuck electrode 14 at 3 kV from the beginning, it is accumulated at the chuck electrode 114 with the charge -37-201009997. The potential of the point P1 gradually rises in accordance with the time constant of the circuit, and takes a certain amount of time to reach 3 kV and stabilize. Here, it takes about 15 sec to reach the same 3kV as the rated voltage of the chuck electrode 114. Further, the applied voltage is also set to 3 kV, and the size of the chuck electrode 1 14 is vertical and horizontal 2. 2m x2. In the case of 5m, it is 9. 8sec, when it is vertical and horizontal 2. 0mx2. In the case of 3m, it is 8. 0sec. On the other hand, as shown in FIG. 1 1 (B), for the chuck electrode 114, a DC voltage which is a voltage higher than the rated voltage of the chuck electrode 114 is initially applied only in the specific period T4 (No. 5kV of 1 DC voltage), and when a low voltage DC voltage (second DC voltage) is applied 3kV in a short time, the potential at point P1 is more rapid than that in the case of Fig. 11(A). Then, at the moment before the switching, it becomes a peak of, for example, about 4 kV. After a certain period of time T4, by switching to a low voltage, the potential of the point 1 gradually falls after passing the peak, and arrives. 3kV and stabilized. Here, if attention is paid to the potential of the chuck electrode 1 14 , it can be seen that when the potential of the point P1 is about 4 kV, the potential of the chuck electrode 114 reaches 3 kV which is the rated voltage, at this time, by Switching to a DC voltage of 3 kV, the potential of the chuck electrode 114 can be maintained at this level while maintaining the state at 3 kV. In the sixth embodiment, the above-described characteristics are used to increase the potential of the chuck electrode 114 more rapidly. Next, an operation of this sixth embodiment using the characteristics shown in Fig. 11 described above will be described. FIG. 12 is a timing chart showing the timing of the switching of each switch section -38-201009997 and the potential of the potential monitoring unit 150 and the voltage applied to the chuck, and FIG. 13' is used for the sixth implementation. A flow chart illustrating the action. In Fig. 12, the shutter portion 124 of Fig. 12(A) operates, the opening and closing operation of the bypass switch unit 1 1 〇, the potential of the electrode 114 of Fig. 12 (C), and the high frequency power of Fig. 12(D). The application lines are the same as those shown in Fig. 2, respectively. Further, in Fig. 120, the potential detected by the potential monitoring unit 150 is displayed, and F) shows the suction pressure outputted by the DC high voltage power supply 120. First, the switch control unit 1 1 2 closes the mounting unit 84 by closing the bypass switch unit 110 provided on the way of bypassing (S1). Next, the switch control unit 112 turns off the chuck switch unit 124 provided on the way to 116, and starts the first DC voltage with respect to the chuck electrode 1 14 by the DC source 1 20 (φ is a high voltage Application of 5 kV of DC voltage (S2). Alternatively, steps S1 and S2 can be performed simultaneously. From this point of time, it becomes the state as it was previously in Fig. 11. That is, by the application of 5 kV, the suction system is rapidly charged, and the potential thereof becomes impatient. Further, when the shutter control unit 1 24 is closed, the switch control unit 1 1 2 notifies the power supply control unit 1 52 of the fact that the power supply control unit 152 is malfunctioning. Next, by the opening and closing of the potential type in the way of setting the electric power line 116, (E), FIG. 12 (the application of the electric wire 108 to the ground is applied to the electric wire high voltage, that is, the disc is also explained. The rise of the electrode is made to prevent the potential detected by the monitoring unit -39-201009997 150 from being input to the power supply control unit 152, and the power supply control unit 152 is determined by the potential monitoring unit 150. Whether the generated potential has reached the specific 预先 defined in advance, for example, whether it has reached 4kV, and waits until it reaches 4kV (NO of S3). If it reaches 4kV (YES of S3), then The DC high voltage power supply 120 is controlled, and is switched from the first DC voltage (5 kV) to the second DC voltage (3 kV) which is a lower voltage, and is applied (S4). This 3 kV is the chuck electrode 114. The rated voltage of the chuck electrode 112 at this time is about 3 kV of the rated voltage as described in Fig. 11, so that it can be charged to the rated voltage more quickly. Here, 5 k is applied. V The period T4 of the DC voltage is as described in Fig. 11. As a result, it is about 4 sec. In addition, it is needless to say that the time of 4 sec is the size of the electrostatic chuck 86 or the first DC. In the same manner, after switching to the second DC voltage, the system waits for a predetermined time T5 until the potential at the mounting table 84 is stabilized, for example, a standby period of about 5 to 10 sec (S5). NO), and if the standby for the specific time T5 is performed (YES of S5), the ground of the mounting table 84 is cut off (S6) by turning the bypass switch unit 1 1 〇 to the on state. The time T5 is the time required until the potential of the mounting table 84 is stabilized as described above. Then, the high-frequency voltage from the high-frequency power source 92 is applied to the mounting table 84 (S7). In the sixth embodiment, in the sixth embodiment, when the charge is accumulated at the chuck electrode 1 1 4 (charging), the system is set to: initially apply a high voltage. First The current voltage (for example, 5 kV) is applied to the second DC voltage (for example, 3 kV) which is lower than the first DC voltage, so that charging of the chuck electrode 114 can be performed more quickly. In C), the change in the potential of the chuck electrode 1 14 when the chain of Fig. 2 (C) is shown by the one-point chain line is shortened by φ compared to the case of Fig. 2 (C). The charging of the chuck electrode 114 is ended more quickly with sec or so. Further, in the sixth embodiment, the fourth embodiment of Fig. 7 in which the bypass line 108 is not provided is applicable to all of the first to third and fifth embodiments. . <Seventh embodiment> Next, a seventh embodiment of the stage structure of the present invention will be described. Fig. 14 is a view showing the configuration of an important portion of the seventh embodiment of the stage structure of the present invention. It is to be noted that the same reference numerals are given to the same components as in the sixth embodiment, and the description thereof will be omitted. In the sixth embodiment shown in FIG. 10, the potential monitoring unit 150' is provided in the middle of the power supply line 116, and the power supply control unit 152 performs switching of the applied DC voltage with reference to the detection 値. In the seventh embodiment, the 'sampling time' is set after the suction switch unit 14 is closed, and is applied when a predetermined time has elapsed. The DC voltage is switched. -41 - 201009997 That is, as shown in FIG. 14, generally, the potential monitoring portion 150 provided in FIG. 10 is not provided at the power feeding line 116. Instead, the power supply control portion 152 is provided. The chronograph function (not shown) is used as a starting point when the signal from the switch unit control unit 112 that the notification of the shutter switch unit 124 is turned off is used as a starting point, and the elapsed time is measured by the chronograph function. Then, in response to the measurement time of the timing function, the power supply control unit 152 switches from the first DC voltage (5 kV) to the second DC voltage for the DC high voltage power supply 120. The voltage (3 kV) is output as a command. Here, the specific time for switching is from the start of the application of the first DC voltage to the chuck electrode 114 until the potential of the chuck electrode 114 reaches the rated voltage. The length of the period below is as follows. As shown in the graph shown in FIG. 11, the specific period is set to, for example, 4 sec. The time of 4 sec can be further shortened by constructing the filter unit 118 as an inductive element, and this time, as in the foregoing, is also the same as the size of the chuck electrode 114. 1 The magnitude of the DC voltage changes, and the setting of the above specific time is variable. The operation of the seventh embodiment is performed only in the step S3 of the flowchart of the sixth embodiment shown in Fig. 13 instead of the detection of the potential detecting unit 150, and the suction is performed. Whether or not a certain period of time (for example, 4 sec) has elapsed after the switch unit 1 24 is turned off is different at the point of judgment, and the other steps are the same as those shown in FIG. Further, the timing of switching between the respective switching sections or the state of the change of each voltage, 42-201009997, is also the same as the timing chart shown in FIG. Further, in the seventh embodiment, the fourth embodiment of FIG. 7 in which the bypass line 1 is not provided is applicable to all of the first to third and fifth embodiments. In the state. Further, in the sixth and seventh embodiments shown in FIG. 10 and FIG. 14, the DC high-voltage power supply 120 is a variable power supply that can change the output voltage, but instead of this, As a modification of the DC high-voltage power supply shown in FIG. 15 φ, the first power supply unit 15 4A that outputs the first DC voltage (for example, 5 kV) and the second power supply unit 154B that outputs the second DC voltage (for example, 3 kV) are generally outputted. In parallel, the two power supply units 154A and 154B are switched and output by the switch unit 156 controlled by the power supply control unit. Here, the above-mentioned 5kV and 3kV are merely for the purpose of showing one of them, and it is needless to say that the present invention is not limited to these. Further, in the sixth and seventh embodiments of the φ type shown in Figs. 10 and 14 described above, in order to facilitate understanding of the present invention, the switch control unit 12 and the power supply control unit 152 are separately provided. However, needless to say, these can also be integrated and set. Further, in each of the above embodiments, the plasma etching treatment has been described as an example of a plasma etching treatment, but the electrostatic chuck is provided and plasma is generated by high-frequency power to perform plasma processing. The present invention can be applied to all of the plasma processing apparatuses. Further, in each of the above embodiments, the heating means is not provided at the mounting table 84. However, the mounting table 84 may be provided with, for example, a resistance heating-43-201009997 as a heating means. The treated body is heated to a specific temperature. In addition, although the glass substrate for liquid crystal display devices which are insulators is described as an example of the object to be processed, the present invention is not limited thereto, and may be used for a ceramic substrate or the like. The present invention is applied to a substrate of another insulator or a semiconductor wafer (semiconductor substrate). [Simple description of the map]
[圖1]展示使用有本發明之載置台機構的電漿處理裝 A w 置之第1實施型態的構成圖。 [圖2]展示吸盤用開關部與旁通用開關部之切換的時 序和吸盤電極之電位以及高頻電力之施加的時序間的關係 作說明之時序圖。 [圖3]展示在載置台機構之靜電吸盤處的相對於直流 電壓之吸盤等價電路的圖。 [圖4]展示吸盤電極之電位的變化之圖。 [圖5]展示本發明之載置台機構的第2實施形態之重 @ 要部位的構成圖。 [圖6]展示本發明之載置台機構的第3實施形態之重 要部位的構成圖。 [圖7]展示本發明之載置台機構的第4實施形態之重 要部位的構成圖。 [圖8]展示本發明之載置台機構的第5實施形態之重 要部位的構成圖。 [圖9]展示從對於吸盤電極之電壓施加開始起直到到 -44- 201009997 達設定電壓爲止的時間與載置台面積之間的關係之圖。 [圖10]展示本發明之載置台機構的第6實施形態之重 要部位的構成圖。 [圖11]對於將直流電壓施加至吸盤電極處後之身爲電 位監測部之點P 1的電位之變化作展示的圖表。 [圖12]對於各開關部之切換的時序與電位監測部之電 壓以及吸盤施加電壓之變化作展示的時序圖。 ❹ [圖13]用以說明第6實施型態中之動作的流程圖° [圖14]展示本發明之載置台構造的第7實施形態 要部位的構成圖。 [圖15]展示直流高壓電源之變形例的圖-[圖16]展示先前技術之電漿處理裝置的其中—供 成圖。 【主要元件符號說明】 〇 46:電容器（電容元件） 50 :電漿處理裝置 52 :處理容器 60 :排氣手段 68 :噴淋頭部（氣體導入手段） 80 :載置台機構 84 :載置台 86 :靜電吸盤 92 :高頻電源 -45- 201009997 94 :檢測線 96 :直流成分檢測電路 98:高頻截斷用之線圈 1 0 0 :第1電阻 1 0 2 :第2電阻 1 〇 8 :旁通線 1 1 〇 :旁通用開關部 1 1 2 :開關控制部 1 1 4 :吸盤電極 1 1 6 :給電線 1 1 8 :濾波部 120:直流闻壓電源 122:高頻截斷用之線圈（感應元件） 124 :吸盤用開關部 126 :裝置控制部 130:高頻截斷用之線圈（感應元件） φ 150 :電位監測部 1 5 2 :電源控制部 1 5 4 A :第1電源部 1 5 4 B :第2電源部 1 5 6 :開關部 W:玻璃基板（被處理體） -46 -Fig. 1 is a view showing a configuration of a first embodiment of a plasma processing apparatus Aw using the stage mechanism of the present invention. Fig. 2 is a timing chart showing the relationship between the timing of switching between the shutter portion and the bypass switch portion, the potential of the chuck electrode, and the timing at which the high-frequency power is applied. Fig. 3 is a view showing a chuck equivalent circuit with respect to a DC voltage at an electrostatic chuck of a stage mechanism. Fig. 4 is a view showing a change in potential of a chuck electrode. Fig. 5 is a view showing a configuration of a portion of a second embodiment of the stage mechanism of the present invention. Fig. 6 is a view showing the configuration of essential parts of a third embodiment of the stage mechanism of the present invention. Fig. 7 is a view showing the configuration of essential parts of a fourth embodiment of the stage mechanism of the present invention. Fig. 8 is a view showing the configuration of essential parts of a fifth embodiment of the stage mechanism of the present invention. Fig. 9 is a view showing the relationship between the time from the start of voltage application to the chuck electrode and the time until the set voltage is reached from -44 to 201009997, and the area of the stage. Fig. 10 is a view showing the configuration of essential parts of a sixth embodiment of the stage mechanism of the present invention. [Fig. 11] A graph showing changes in the potential of the point P 1 of the potential monitoring portion after the DC voltage is applied to the chuck electrode. Fig. 12 is a timing chart showing changes in the timing of switching between the respective switching sections and the voltage of the potential monitoring section and the change in the voltage applied to the chuck. [Fig. 13] A flow chart for explaining the operation in the sixth embodiment. Fig. 14 is a view showing a configuration of a main portion of a seventh embodiment of the stage structure of the present invention. Fig. 15 is a view showing a modification of a DC high voltage power supply - Fig. 16 is a view showing a state in which a plasma processing apparatus of the prior art is provided. [Description of main component symbols] 〇46: Capacitor (capacitive element) 50: Plasma processing apparatus 52: Processing container 60: Exhaust means 68: Shower head (gas introduction means) 80: Stage mechanism 84: Mounting table 86 : Electrostatic chuck 92 : High frequency power supply -45 - 201009997 94 : Detection line 96 : DC component detection circuit 98 : High frequency cutoff coil 1 0 0 : 1st resistor 1 0 2 : 2nd resistor 1 〇 8 : Bypass Line 1 1 〇: Side common switch unit 1 1 2 : Switch control unit 1 1 4 : Suction cup electrode 1 1 6 : Feed line 1 1 8 : Filter unit 120: DC squeezing power supply 122: High-frequency cut-off coil (induction Element: 124: suction cup switch unit 126: device control unit 130: coil for high-frequency interruption (inductance element) φ 150 : potential monitoring unit 1 5 2 : power supply control unit 1 5 4 A : first power supply unit 1 5 4 B: second power supply unit 1 5 6 : switch unit W: glass substrate (subject to be processed) -46 -