KR101059811B1 - 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법 - Google Patents

마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법 Download PDF

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KR101059811B1
KR101059811B1 KR1020100042384A KR20100042384A KR101059811B1 KR 101059811 B1 KR101059811 B1 KR 101059811B1 KR 1020100042384 A KR1020100042384 A KR 1020100042384A KR 20100042384 A KR20100042384 A KR 20100042384A KR 101059811 B1 KR101059811 B1 KR 101059811B1
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South Korea
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layer
alignment
mark
substrate
virtual
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Korean (ko)
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안성민
최호석
장상돈
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삼성전자주식회사
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Priority to KR1020100042384A priority Critical patent/KR101059811B1/ko
Priority to US13/064,558 priority patent/US8675180B2/en
Priority to JP2011085329A priority patent/JP2011237781A/ja
Priority to EP11162007.6A priority patent/EP2385426A3/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020100042384A 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법 Active KR101059811B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020100042384A KR101059811B1 (ko) 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법
US13/064,558 US8675180B2 (en) 2010-05-06 2011-03-31 Maskless exposure apparatus and method of alignment for overlay in maskless exposure
JP2011085329A JP2011237781A (ja) 2010-05-06 2011-04-07 マスクレス露光装置とマスクレス露光でのオーバーレイのための整列方法
EP11162007.6A EP2385426A3 (en) 2010-05-06 2011-04-12 Maskless exposure apparatus and method of alignment for overlay in maskless exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100042384A KR101059811B1 (ko) 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법

Publications (1)

Publication Number Publication Date
KR101059811B1 true KR101059811B1 (ko) 2011-08-26

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KR1020100042384A Active KR101059811B1 (ko) 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법

Country Status (4)

Country Link
US (1) US8675180B2 (https=)
EP (1) EP2385426A3 (https=)
JP (1) JP2011237781A (https=)
KR (1) KR101059811B1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140074124A (ko) * 2012-12-07 2014-06-17 엘지디스플레이 주식회사 마스크리스 노광 장치의 얼라인 방법
KR101854521B1 (ko) 2016-06-08 2018-05-03 인하대학교 산학협력단 Dmd를 이용한 노광시스템
KR20190032015A (ko) * 2017-09-19 2019-03-27 주식회사 리텍 Dmd에 입사하는 조사광 방향을 제어할 수 있는 노광 광학계 및 이를 구성하는 광 조사 광학계
KR20190035066A (ko) * 2017-09-26 2019-04-03 주식회사 리텍 고속 노광과 저속 노광이 가능한 ｄｍｄ 기반의 노광 장치

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607291B (zh) * 2013-04-17 2017-12-01 Orc Manufacturing Co Ltd Exposure device
CN110235061B (zh) 2017-01-31 2021-06-18 Asml荷兰有限公司 用于增加图案定位的准确度的方法及系统
US10859924B2 (en) 2017-11-15 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device and system for performing the same
JP7356585B2 (ja) * 2019-10-08 2023-10-04 アプライド マテリアルズ インコーポレイテッド マスクレスリソグラフィシステム用ユニバーサル計測ファイル、プロトコル、及びプロセス
CN114442436B (zh) * 2020-10-30 2024-08-13 京东方科技集团股份有限公司 一种数字曝光设备和曝光方法
JP7660677B2 (ja) 2020-12-17 2025-04-11 アプライド マテリアルズ インコーポレイテッド デジタルリソグラフィにおけるローカルセル置換のための適応的置換マップの使用
KR20240055034A (ko) * 2021-09-03 2024-04-26 상에이 기켄 가부시키가이샤 직접 묘화 장치 및 그 제어 방법
CN114200797B (zh) * 2021-12-14 2022-11-22 南京大学 一种用于纳米压印金属光栅拼接对齐的掩模及金属光栅拼接方法
JP7808637B2 (ja) * 2024-05-29 2026-01-29 レーザーテック株式会社 情報処理方法及び情報処理装置
CN119805879B (zh) * 2025-02-11 2026-04-03 合肥芯碁微电子装备股份有限公司 应用于直写光刻机的纠偏对位方法及装置、介质和光刻机

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10186683A (ja) 1996-12-20 1998-07-14 Hitachi Ltd セラミックス多層配線基板と薄膜パターンのアライメント方法
JP2009210726A (ja) 2008-03-03 2009-09-17 Hitachi Via Mechanics Ltd マスクレス露光装置
US20100060874A1 (en) 2008-09-11 2010-03-11 Samsung Electronics Co., Ltd. Maskless lithographic apparatus and methods of compensation for rotational alignment error using the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4273030B2 (ja) * 2004-03-29 2009-06-03 富士フイルム株式会社 露光装置の校正方法及び露光装置
US7368207B2 (en) * 2006-03-31 2008-05-06 Eastman Kodak Company Dynamic compensation system for maskless lithography
JP5211487B2 (ja) * 2007-01-25 2013-06-12 株式会社ニコン 露光方法及び露光装置並びにマイクロデバイスの製造方法
JP2009223262A (ja) * 2008-03-19 2009-10-01 Orc Mfg Co Ltd 露光システムおよび露光方法
US8670106B2 (en) * 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
JP5355245B2 (ja) * 2009-06-25 2013-11-27 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
KR101678050B1 (ko) * 2009-11-16 2016-12-07 삼성전자 주식회사 오프 액시스 정렬을 이용한 마스크리스 노광 장치 및 방법
KR101678039B1 (ko) * 2010-10-01 2016-11-21 삼성전자 주식회사 마스크리스 노광 장치, 마스크리스 노광에서 노광 시작 위치와 자세를 결정하는 방법
KR101764169B1 (ko) * 2011-08-19 2017-08-02 삼성전자 주식회사 마스크리스 노광 장치와 이를 이용한 빔 위치 계측 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10186683A (ja) 1996-12-20 1998-07-14 Hitachi Ltd セラミックス多層配線基板と薄膜パターンのアライメント方法
JP2009210726A (ja) 2008-03-03 2009-09-17 Hitachi Via Mechanics Ltd マスクレス露光装置
US20100060874A1 (en) 2008-09-11 2010-03-11 Samsung Electronics Co., Ltd. Maskless lithographic apparatus and methods of compensation for rotational alignment error using the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140074124A (ko) * 2012-12-07 2014-06-17 엘지디스플레이 주식회사 마스크리스 노광 장치의 얼라인 방법
KR102020934B1 (ko) 2012-12-07 2019-09-11 엘지디스플레이 주식회사 마스크리스 노광 장치의 얼라인 방법
KR101854521B1 (ko) 2016-06-08 2018-05-03 인하대학교 산학협력단 Dmd를 이용한 노광시스템
KR20190032015A (ko) * 2017-09-19 2019-03-27 주식회사 리텍 Dmd에 입사하는 조사광 방향을 제어할 수 있는 노광 광학계 및 이를 구성하는 광 조사 광학계
KR102013194B1 (ko) 2017-09-19 2019-08-22 주식회사 리텍 Dmd에 입사하는 조사광 방향을 제어할 수 있는 노광 광학계 및 이를 구성하는 광 조사 광학계
KR20190035066A (ko) * 2017-09-26 2019-04-03 주식회사 리텍 고속 노광과 저속 노광이 가능한 ｄｍｄ 기반의 노광 장치
KR102042012B1 (ko) 2017-09-26 2019-11-08 주식회사 리텍 고속 노광과 저속 노광이 가능한 ｄｍｄ 기반의 노광 장치

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Publication number Publication date
US20110273690A1 (en) 2011-11-10
US8675180B2 (en) 2014-03-18
EP2385426A2 (en) 2011-11-09
EP2385426A3 (en) 2015-10-21
JP2011237781A (ja) 2011-11-24

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