KR101046969B1 - Ｃｖｄ 배기 시스템의 인시튜 세정 - Google Patents

Ｃｖｄ 배기 시스템의 인시튜 세정 Download PDF

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Publication number
KR101046969B1
KR101046969B1 KR1020087030343A KR20087030343A KR101046969B1 KR 101046969 B1 KR101046969 B1 KR 101046969B1 KR 1020087030343 A KR1020087030343 A KR 1020087030343A KR 20087030343 A KR20087030343 A KR 20087030343A KR 101046969 B1 KR101046969 B1 KR 101046969B1
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South Korea
Prior art keywords
chamber
exhaust line
formation
cvd
polymers
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Expired - Fee Related
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KR1020087030343A
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English (en)
Korean (ko)
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KR20090016476A (ko
Inventor
데이비드 케이. 칼손
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020087030343A 2006-05-16 2007-05-15 Ｃｖｄ 배기 시스템의 인시튜 세정 Expired - Fee Related KR101046969B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/435,065 US20070267143A1 (en) 2006-05-16 2006-05-16 In situ cleaning of CVD system exhaust
US11/435,065 2006-05-16
PCT/US2007/068948 WO2007137035A2 (en) 2006-05-16 2007-05-15 In situ cleaning of cvd system exhaust

Publications (2)

Publication Number Publication Date
KR20090016476A KR20090016476A (ko) 2009-02-13
KR101046969B1 true KR101046969B1 (ko) 2011-07-06

Family

ID=38659696

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KR1020087030343A Expired - Fee Related KR101046969B1 (ko) 2006-05-16 2007-05-15 Ｃｖｄ 배기 시스템의 인시튜 세정

Country Status (7)

Country Link
US (2) US20070267143A1 (enExample)
JP (1) JP5269770B2 (enExample)
KR (1) KR101046969B1 (enExample)
CN (1) CN101535525B (enExample)
DE (1) DE112007001223T5 (enExample)
TW (1) TWI388689B (enExample)
WO (1) WO2007137035A2 (enExample)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20210099231A (ko) 2020-02-03 2021-08-12 주식회사 제이엔케이 화학기상증착 장치
KR20210099232A (ko) 2020-02-03 2021-08-12 주식회사 제이엔케이 화학기상증착 장치

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DE102009043848A1 (de) 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
KR101590661B1 (ko) * 2010-09-13 2016-02-01 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체
US10167554B2 (en) 2010-12-30 2019-01-01 Veeco Instruments Inc. Wafer processing with carrier extension
KR101884003B1 (ko) * 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
CN102615068B (zh) * 2012-03-26 2015-05-20 中微半导体设备(上海)有限公司 Mocvd设备的清洁方法
WO2013163192A1 (en) * 2012-04-24 2013-10-31 Applied Materials, Inc. Gas reclamation and abatement system for high volume epitaxial silicon deposition system
US9388493B2 (en) 2013-01-08 2016-07-12 Veeco Instruments Inc. Self-cleaning shutter for CVD reactor
CN111952149A (zh) * 2013-05-23 2020-11-17 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
JP5605464B2 (ja) * 2013-06-25 2014-10-15 東京エレクトロン株式会社 成膜装置及びそのクリーニング方法
US11414759B2 (en) * 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN103938177B (zh) * 2014-05-07 2015-12-30 南昌黄绿照明有限公司 可用氯气在线清洗的非钎焊mocvd喷头
KR102372893B1 (ko) 2014-12-04 2022-03-10 삼성전자주식회사 발광 소자 제조용 화학 기상 증착 장치
JP6625891B2 (ja) * 2016-02-10 2019-12-25 株式会社日立ハイテクノロジーズ 真空処理装置
TWI609988B (zh) * 2016-07-21 2018-01-01 台灣積體電路製造股份有限公司 製程設備及化學氣相沉積製程
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
JP7080140B2 (ja) * 2018-09-06 2022-06-03 東京エレクトロン株式会社 基板処理装置
CN111069192A (zh) * 2018-10-22 2020-04-28 北京北方华创微电子装备有限公司 原位清洗装置和半导体处理设备
WO2024191570A1 (en) * 2023-03-14 2024-09-19 Applied Materials, Inc. Improved process chamber clean

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US20010008618A1 (en) * 1998-10-07 2001-07-19 Paul B. Comita Point-of-use exhaust by-product reactor
KR20030022136A (ko) * 2000-05-29 2003-03-15 유스엔지니아링구 가부시키가이샤 피처리물처리장치 및 그것을 사용한 플라즈마설비
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing

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US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
US20010008618A1 (en) * 1998-10-07 2001-07-19 Paul B. Comita Point-of-use exhaust by-product reactor
KR20030022136A (ko) * 2000-05-29 2003-03-15 유스엔지니아링구 가부시키가이샤 피처리물처리장치 및 그것을 사용한 플라즈마설비

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210099231A (ko) 2020-02-03 2021-08-12 주식회사 제이엔케이 화학기상증착 장치
KR20210099232A (ko) 2020-02-03 2021-08-12 주식회사 제이엔케이 화학기상증착 장치

Also Published As

Publication number Publication date
CN101535525B (zh) 2012-12-19
US20070267143A1 (en) 2007-11-22
JP2009537993A (ja) 2009-10-29
JP5269770B2 (ja) 2013-08-21
US8343317B2 (en) 2013-01-01
WO2007137035A2 (en) 2007-11-29
TW200804619A (en) 2008-01-16
US20090044699A1 (en) 2009-02-19
WO2007137035A3 (en) 2008-12-11
CN101535525A (zh) 2009-09-16
TWI388689B (zh) 2013-03-11
KR20090016476A (ko) 2009-02-13
DE112007001223T5 (de) 2009-04-23

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