KR101038876B1 - 화학기상증착용 웨이퍼 및 이를 제조하는 방법 - Google Patents
화학기상증착용 웨이퍼 및 이를 제조하는 방법 Download PDFInfo
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- KR101038876B1 KR101038876B1 KR1020070136263A KR20070136263A KR101038876B1 KR 101038876 B1 KR101038876 B1 KR 101038876B1 KR 1020070136263 A KR1020070136263 A KR 1020070136263A KR 20070136263 A KR20070136263 A KR 20070136263A KR 101038876 B1 KR101038876 B1 KR 101038876B1
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 12
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000012495 reaction gas Substances 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 5
- 239000013212 metal-organic material Substances 0.000 claims abstract 3
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 5
- 230000033001 locomotion Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 230000005489 elastic deformation Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- 반응가스가 공급되는 고온분위기의 반응챔버내에 구비되는 서셉터의 포켓에 탑재되어 적어도 하나이상의 금속유기물이 증착면에 증착되는 웨이퍼에 있어서,상기 포켓에 탑재되는 웨이퍼 몸체의 상부면은 평면상으로 구비되고, 상기 웨이퍼 몸체의 하부면에는 상기 포켓의 바닥면과 접촉되는 외측테두리로부터 상기 웨이퍼 몸체의 중심으로 향하여 상기 포켓의 바닥면과의 일정간격을 서서히 증대시키도록 경사지는 이격부를 구비함을 특징으로 하는 화학기상증착용 웨이퍼.
- 제1항에 있어서, 상기 이격부는 일정크기의 곡률을 갖는 호형단면상으로 구비됨을 특징으로 하는 화학기상증착용 웨이퍼.
- 반응가스가 공급되는 고온분위기의 반응챔버내에 구비되는 서셉터의 포켓에 탑재되어 적어도 하나이상의 금속유기물이 증착면에 증착되는 웨이퍼에 있어서,상기 포켓에 탑재되는 웨이퍼 몸체의 하부면에는 상기 포켓의 바닥면과 접촉되는 외측테두리로부터 상기 웨이퍼 몸체의 중심으로 향하여 상기 포켓의 바닥면과의 일정간격을 서서히 증대시키도록 경사지는 이격부를 구비하고,상기 이격부와 상기 서셉터의 바닥면간의 최대 들뜸높이는 상기 웨이퍼 몸체의 최대두께에 대하여 20% 내지 40%의 크기로 구비됨을 특징으로 하는 화학기상증착용 웨이퍼.
- 제1항 또는 제3항에 있어서, 상기 웨이퍼 몸체의 외주면과 상기 포켓의 내주면사이에는 일정크기의 간격을 형성함을 특징으로 하는 화학기상증착용 웨이퍼.
- 제1항 또는 제3항에 있어서, 상기 웨이퍼 몸체의 외측테두리는 상기 서셉터의 바닥면과 선접촉되거나 면접촉됨을 특징으로 하는 화학기상증착용 웨이퍼.
- 삭제
- 일정두께의 웨이퍼 몸체를 제공하는 단계 ;상기 웨이퍼몸체의 일측면을 고정판에 고정하여 외부노출되는 웨이퍼 몸체의 타측면을 평면 연마재로서 평탄하게 연마하여 증착면을 형성하는 단계 ; 및상기 웨이퍼 몸체의 증착면을 고정판에 고정하여 외부노출되는 웨이퍼몸체의 일측면을 곡면 연마재로서 일정크기의 곡률을 갖도록 곡면가공하는 단계 ; 를 포함하는 화학기상증착용 웨이퍼 제조방법.
- 제7항에 있어서, 상기 곡면 연마재는 상기 웨이퍼 몸체의 일측면과 대응하는 전면이 일정크기의 곡률반경을 갖는 곡면상의 원반으로 구비됨을 특징으로 하는 화학기상증착용 웨이퍼 제조방법.
- 제7항에 있어서, 상기 곡면 연마재는 일방향으로 회전구동이 가능하고, 상기 고정판측으로 왕복직선운동이 가능한 구동축의 선단에 장착되어 상기 구동축을 상기 웨이퍼 몸체측으로 가압하는 가압력에 의해서 상기 웨이퍼 몸체의 중심측으로 볼록하게 탄성변형되는 원반상의 탄성판으로 구비됨을 특징으로 하는 화학기상증착용 웨이퍼 제조방법.
- 제7항에 있어서, 상기 웨이퍼 몸체의 일측면에 곡면연마되는 이격부와 상기 웨이퍼 몸체가 탑재되는 서셉터의 바닥면간의 최대 들뜸높이는 상기 웨이퍼 몸체의 최대두께에 대하여 20 내지 40%의 크기로 구비됨을 특징으로 하는 화학기상증착용 웨이퍼 제조방법.
Priority Applications (2)
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KR1020070136263A KR101038876B1 (ko) | 2007-12-24 | 2007-12-24 | 화학기상증착용 웨이퍼 및 이를 제조하는 방법 |
JP2008269387A JP5047923B2 (ja) | 2007-12-24 | 2008-10-20 | 化学気相蒸着用ウェーハ及びこれを製造する方法 |
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KR1020070136263A KR101038876B1 (ko) | 2007-12-24 | 2007-12-24 | 화학기상증착용 웨이퍼 및 이를 제조하는 방법 |
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KR20090068586A KR20090068586A (ko) | 2009-06-29 |
KR101038876B1 true KR101038876B1 (ko) | 2011-06-02 |
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Cited By (1)
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KR20180056186A (ko) * | 2016-11-18 | 2018-05-28 | 일진디스플레이(주) | 사파이어 웨이퍼 및 이를 제조하는 방법 |
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KR101276747B1 (ko) * | 2011-11-14 | 2013-06-19 | 김선국 | 곡면 복원 장치 및 곡면 복원 방법 |
KR102280264B1 (ko) * | 2014-09-15 | 2021-07-22 | 삼성디스플레이 주식회사 | 화학기상증착장치 및 이를 이용한 디스플레이 장치 제조방법 |
EP3957776A1 (de) * | 2020-08-17 | 2022-02-23 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
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JP2007214368A (ja) * | 2006-02-09 | 2007-08-23 | Hitachi Cable Ltd | Movpe用化合物半導体ウェハ、その製造方法及びmovpe用化合物半導体エピタキシャルウェハの製造方法 |
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JPH065485A (ja) * | 1992-06-19 | 1994-01-14 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH07249573A (ja) * | 1994-03-14 | 1995-09-26 | Nippon Steel Corp | 半導体基板の製造方法 |
JPH1154437A (ja) * | 1997-07-30 | 1999-02-26 | Kyocera Corp | 化合物半導体膜の形成方法 |
JP2006278523A (ja) * | 2005-03-28 | 2006-10-12 | Dowa Mining Co Ltd | ウェハ及びその製造方法、並びに半導体基板及びその製造方法 |
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JP2007214368A (ja) * | 2006-02-09 | 2007-08-23 | Hitachi Cable Ltd | Movpe用化合物半導体ウェハ、その製造方法及びmovpe用化合物半導体エピタキシャルウェハの製造方法 |
Cited By (2)
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KR20180056186A (ko) * | 2016-11-18 | 2018-05-28 | 일진디스플레이(주) | 사파이어 웨이퍼 및 이를 제조하는 방법 |
KR101876838B1 (ko) * | 2016-11-18 | 2018-08-09 | 일진디스플레이(주) | 사파이어 웨이퍼 및 이를 제조하는 방법 |
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KR20090068586A (ko) | 2009-06-29 |
JP5047923B2 (ja) | 2012-10-10 |
JP2009152548A (ja) | 2009-07-09 |
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