KR101016464B1 - 그레이톤 마스크 및 박막 트랜지스터 기판의 제조 방법 - Google Patents
그레이톤 마스크 및 박막 트랜지스터 기판의 제조 방법 Download PDFInfo
- Publication number
- KR101016464B1 KR101016464B1 KR1020060026088A KR20060026088A KR101016464B1 KR 101016464 B1 KR101016464 B1 KR 101016464B1 KR 1020060026088 A KR1020060026088 A KR 1020060026088A KR 20060026088 A KR20060026088 A KR 20060026088A KR 101016464 B1 KR101016464 B1 KR 101016464B1
- Authority
- KR
- South Korea
- Prior art keywords
- pattern
- film
- mask
- gray tone
- mark
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 238000012546 transfer Methods 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims description 259
- 238000005530 etching Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 37
- 230000000903 blocking effect Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 33
- 239000000463 material Substances 0.000 description 15
- 238000004380 ashing Methods 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000011651 chromium Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910016006 MoSi Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- -1 peroxide salt Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Liquid Crystal (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00082500 | 2005-03-22 | ||
JP2005082500A JP4693451B2 (ja) | 2005-03-22 | 2005-03-22 | グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060102524A KR20060102524A (ko) | 2006-09-27 |
KR101016464B1 true KR101016464B1 (ko) | 2011-02-24 |
Family
ID=37015388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060026088A KR101016464B1 (ko) | 2005-03-22 | 2006-03-22 | 그레이톤 마스크 및 박막 트랜지스터 기판의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4693451B2 (zh) |
KR (1) | KR101016464B1 (zh) |
CN (2) | CN1837956B (zh) |
TW (1) | TW200702935A (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4809752B2 (ja) * | 2006-11-01 | 2011-11-09 | 株式会社エスケーエレクトロニクス | 中間調フォトマスク及びその製造方法 |
JP5044262B2 (ja) * | 2007-04-10 | 2012-10-10 | 株式会社エスケーエレクトロニクス | 多階調フォトマスク及びその製造方法 |
JP5089362B2 (ja) * | 2007-12-13 | 2012-12-05 | 信越化学工業株式会社 | フォトマスクおよび露光方法 |
KR101295235B1 (ko) * | 2008-08-15 | 2013-08-12 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 그레이톤 마스크 블랭크, 그레이톤 마스크, 및 제품 가공 표지 또는 제품 정보 표지의 형성방법 |
US8512918B2 (en) * | 2009-03-26 | 2013-08-20 | Hoya Corporation | Multilayer reflective film coated substrate for a reflective mask, reflective mask blank, and methods of manufacturing the same |
JP5306391B2 (ja) * | 2011-03-02 | 2013-10-02 | 株式会社東芝 | フォトマスク |
JP2011186506A (ja) * | 2011-07-01 | 2011-09-22 | Sk Electronics:Kk | 中間調フォトマスク |
KR101785177B1 (ko) * | 2012-12-27 | 2017-11-06 | 알박 세이마쿠 가부시키가이샤 | 위상 시프트 마스크 및 그의 제조방법 |
JP2015212720A (ja) * | 2014-05-01 | 2015-11-26 | Hoya株式会社 | 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法 |
TWI710850B (zh) * | 2018-03-23 | 2020-11-21 | 日商Hoya股份有限公司 | 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法 |
JP7314523B2 (ja) * | 2019-02-14 | 2023-07-26 | 大日本印刷株式会社 | レーザ露光用フォトマスク及びフォトマスクブランクス |
US20220390833A1 (en) * | 2021-06-03 | 2022-12-08 | Viavi Solutions Inc. | Method of replicating a microstructure pattern |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0149221B1 (ko) * | 1994-06-27 | 1999-02-01 | 김주용 | 반도체 제조용 포토 마스크 |
JP2002189282A (ja) * | 2000-12-21 | 2002-07-05 | Hitachi Ltd | ハーフトーン位相シフトマスクおよびそれを用いた半導体装置の製造方法 |
KR100390801B1 (ko) * | 2001-05-24 | 2003-07-12 | 엘지.필립스 엘시디 주식회사 | 포토 반투과 마스크 제조방법 |
KR20050002661A (ko) * | 2003-06-30 | 2005-01-10 | 호야 가부시키가이샤 | 그레이 톤 마스크의 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002189281A (ja) * | 2000-12-19 | 2002-07-05 | Hoya Corp | グレートーンマスク及びその製造方法 |
JP4410951B2 (ja) * | 2001-02-27 | 2010-02-10 | Nec液晶テクノロジー株式会社 | パターン形成方法および液晶表示装置の製造方法 |
JP2003255510A (ja) * | 2002-03-01 | 2003-09-10 | Hitachi Ltd | 電子装置の製造方法 |
JP2004341139A (ja) * | 2003-05-14 | 2004-12-02 | Canon Inc | グレートーンマスク及びその製造方法 |
JP4393290B2 (ja) * | 2003-06-30 | 2010-01-06 | Hoya株式会社 | グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法 |
JP4108662B2 (ja) * | 2004-10-04 | 2008-06-25 | Nec液晶テクノロジー株式会社 | 薄膜半導体装置の製造方法、レジストパターン形成方法及びこれらの方法に使用するフォトマスク |
-
2005
- 2005-03-22 JP JP2005082500A patent/JP4693451B2/ja active Active
-
2006
- 2006-03-20 TW TW095109428A patent/TW200702935A/zh unknown
- 2006-03-22 CN CN2006100654561A patent/CN1837956B/zh not_active Expired - Fee Related
- 2006-03-22 CN CN201010189553A patent/CN101833236A/zh active Pending
- 2006-03-22 KR KR1020060026088A patent/KR101016464B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0149221B1 (ko) * | 1994-06-27 | 1999-02-01 | 김주용 | 반도체 제조용 포토 마스크 |
JP2002189282A (ja) * | 2000-12-21 | 2002-07-05 | Hitachi Ltd | ハーフトーン位相シフトマスクおよびそれを用いた半導体装置の製造方法 |
KR100390801B1 (ko) * | 2001-05-24 | 2003-07-12 | 엘지.필립스 엘시디 주식회사 | 포토 반투과 마스크 제조방법 |
KR20050002661A (ko) * | 2003-06-30 | 2005-01-10 | 호야 가부시키가이샤 | 그레이 톤 마스크의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
TW200702935A (en) | 2007-01-16 |
CN1837956A (zh) | 2006-09-27 |
CN1837956B (zh) | 2010-10-20 |
CN101833236A (zh) | 2010-09-15 |
JP4693451B2 (ja) | 2011-06-01 |
JP2006267262A (ja) | 2006-10-05 |
KR20060102524A (ko) | 2006-09-27 |
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Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |