KR100997577B1 - 노광장치 및 디바이스 제조방법 - Google Patents

노광장치 및 디바이스 제조방법 Download PDF

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Publication number
KR100997577B1
KR100997577B1 KR1020080035857A KR20080035857A KR100997577B1 KR 100997577 B1 KR100997577 B1 KR 100997577B1 KR 1020080035857 A KR1020080035857 A KR 1020080035857A KR 20080035857 A KR20080035857 A KR 20080035857A KR 100997577 B1 KR100997577 B1 KR 100997577B1
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KR
South Korea
Prior art keywords
light
polarization
optical system
adjusting unit
light amount
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Expired - Fee Related
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KR1020080035857A
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English (en)
Korean (ko)
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KR20080094594A (ko
Inventor
켄이치로 시노다
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20080094594A publication Critical patent/KR20080094594A/ko
Application granted granted Critical
Publication of KR100997577B1 publication Critical patent/KR100997577B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020080035857A 2007-04-20 2008-04-18 노광장치 및 디바이스 제조방법 Expired - Fee Related KR100997577B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00112290 2007-04-20
JP2007112290A JP4966724B2 (ja) 2007-04-20 2007-04-20 露光装置及びデバイス製造方法

Publications (2)

Publication Number Publication Date
KR20080094594A KR20080094594A (ko) 2008-10-23
KR100997577B1 true KR100997577B1 (ko) 2010-11-30

Family

ID=40049668

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080035857A Expired - Fee Related KR100997577B1 (ko) 2007-04-20 2008-04-18 노광장치 및 디바이스 제조방법

Country Status (4)

Country Link
US (1) US8208126B2 (enExample)
JP (1) JP4966724B2 (enExample)
KR (1) KR100997577B1 (enExample)
TW (1) TWI406107B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007043958B4 (de) * 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
JP2009093020A (ja) * 2007-10-10 2009-04-30 Olympus Corp 光学装置及びその光学装置を用いた撮像装置
JP5185727B2 (ja) * 2008-08-22 2013-04-17 ギガフォトン株式会社 偏光純度制御装置及びそれを備えたガスレーザ装置
JP5365641B2 (ja) * 2008-12-24 2013-12-11 株式会社ニコン 照明光学系、露光装置及びデバイスの製造方法
TWI408511B (zh) * 2009-04-24 2013-09-11 E Way Technology Co Ltd Exposure machine and its exposure method
WO2012041339A1 (en) * 2010-09-28 2012-04-05 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors
JP6020834B2 (ja) 2011-06-07 2016-11-02 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP6044062B2 (ja) * 2011-11-09 2016-12-14 岩崎電気株式会社 照射装置
TWI755987B (zh) * 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
CN108121163B (zh) * 2016-11-29 2019-10-25 上海微电子装备（集团）股份有限公司 一种光源曝光剂量控制系统及控制方法
CN117075449B (zh) * 2023-10-16 2024-02-13 广州市艾佛光通科技有限公司 曝光调试装置、系统及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035671A (ja) * 2005-07-22 2007-02-08 Canon Inc 露光装置及び方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620612B2 (ja) * 1996-03-29 2005-02-16 株式会社ニコン 露光量制御装置
US20030095580A1 (en) * 1999-02-12 2003-05-22 Govorkov Sergei V. Beam delivery system for lithographic exposure radiation source
JP2001284236A (ja) 2000-03-31 2001-10-12 Canon Inc 投影露光装置及び露光方法
WO2002052624A1 (fr) * 2000-12-27 2002-07-04 Nikon Corporation Appareil d'exposition, support pour le montage d'elements optiques, gabarit de separation d'elements optiques, et procede de fabrication d'un appareil d'exposition
JP2004235461A (ja) * 2003-01-30 2004-08-19 Nikon Corp 露光システム
JP4692753B2 (ja) * 2004-02-13 2011-06-01 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
JP2007027658A (ja) * 2005-07-21 2007-02-01 Nikon Corp 照明光学装置、露光装置及びマイクロデバイスの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007035671A (ja) * 2005-07-22 2007-02-08 Canon Inc 露光装置及び方法

Also Published As

Publication number Publication date
US8208126B2 (en) 2012-06-26
TWI406107B (zh) 2013-08-21
KR20080094594A (ko) 2008-10-23
TW200907604A (en) 2009-02-16
JP2008270565A (ja) 2008-11-06
US20090002673A1 (en) 2009-01-01
JP4966724B2 (ja) 2012-07-04

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