JP4966724B2 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4966724B2
JP4966724B2 JP2007112290A JP2007112290A JP4966724B2 JP 4966724 B2 JP4966724 B2 JP 4966724B2 JP 2007112290 A JP2007112290 A JP 2007112290A JP 2007112290 A JP2007112290 A JP 2007112290A JP 4966724 B2 JP4966724 B2 JP 4966724B2
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JP
Japan
Prior art keywords
light
polarization
optical system
exposure apparatus
unit
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Expired - Fee Related
Application number
JP2007112290A
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English (en)
Japanese (ja)
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JP2008270565A5 (enExample
JP2008270565A (ja
Inventor
健一郎 篠田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007112290A priority Critical patent/JP4966724B2/ja
Priority to US12/100,034 priority patent/US8208126B2/en
Priority to TW097113964A priority patent/TWI406107B/zh
Priority to KR1020080035857A priority patent/KR100997577B1/ko
Publication of JP2008270565A publication Critical patent/JP2008270565A/ja
Publication of JP2008270565A5 publication Critical patent/JP2008270565A5/ja
Application granted granted Critical
Publication of JP4966724B2 publication Critical patent/JP4966724B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007112290A 2007-04-20 2007-04-20 露光装置及びデバイス製造方法 Expired - Fee Related JP4966724B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007112290A JP4966724B2 (ja) 2007-04-20 2007-04-20 露光装置及びデバイス製造方法
US12/100,034 US8208126B2 (en) 2007-04-20 2008-04-09 Exposure apparatus and device fabrication method
TW097113964A TWI406107B (zh) 2007-04-20 2008-04-17 曝光設備和半導體裝置製造方法
KR1020080035857A KR100997577B1 (ko) 2007-04-20 2008-04-18 노광장치 및 디바이스 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007112290A JP4966724B2 (ja) 2007-04-20 2007-04-20 露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2008270565A JP2008270565A (ja) 2008-11-06
JP2008270565A5 JP2008270565A5 (enExample) 2010-06-03
JP4966724B2 true JP4966724B2 (ja) 2012-07-04

Family

ID=40049668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007112290A Expired - Fee Related JP4966724B2 (ja) 2007-04-20 2007-04-20 露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US8208126B2 (enExample)
JP (1) JP4966724B2 (enExample)
KR (1) KR100997577B1 (enExample)
TW (1) TWI406107B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007043958B4 (de) * 2007-09-14 2011-08-25 Carl Zeiss SMT GmbH, 73447 Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
JP2009093020A (ja) * 2007-10-10 2009-04-30 Olympus Corp 光学装置及びその光学装置を用いた撮像装置
JP5185727B2 (ja) * 2008-08-22 2013-04-17 ギガフォトン株式会社 偏光純度制御装置及びそれを備えたガスレーザ装置
JP5365641B2 (ja) * 2008-12-24 2013-12-11 株式会社ニコン 照明光学系、露光装置及びデバイスの製造方法
TWI408511B (zh) * 2009-04-24 2013-09-11 E Way Technology Co Ltd Exposure machine and its exposure method
WO2012041339A1 (en) * 2010-09-28 2012-04-05 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus and method of reducing image placement errors
JP6020834B2 (ja) 2011-06-07 2016-11-02 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
JP6044062B2 (ja) * 2011-11-09 2016-12-14 岩崎電気株式会社 照射装置
TWI755987B (zh) * 2015-05-19 2022-02-21 美商克萊譚克公司 具有用於疊對測量之形貌相位控制之光學系統
CN108121163B (zh) * 2016-11-29 2019-10-25 上海微电子装备（集团）股份有限公司 一种光源曝光剂量控制系统及控制方法
CN117075449B (zh) * 2023-10-16 2024-02-13 广州市艾佛光通科技有限公司 曝光调试装置、系统及方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3620612B2 (ja) * 1996-03-29 2005-02-16 株式会社ニコン 露光量制御装置
US20030095580A1 (en) * 1999-02-12 2003-05-22 Govorkov Sergei V. Beam delivery system for lithographic exposure radiation source
JP2001284236A (ja) 2000-03-31 2001-10-12 Canon Inc 投影露光装置及び露光方法
WO2002052624A1 (fr) * 2000-12-27 2002-07-04 Nikon Corporation Appareil d'exposition, support pour le montage d'elements optiques, gabarit de separation d'elements optiques, et procede de fabrication d'un appareil d'exposition
JP2004235461A (ja) * 2003-01-30 2004-08-19 Nikon Corp 露光システム
JP4692753B2 (ja) * 2004-02-13 2011-06-01 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
JP2007027658A (ja) * 2005-07-21 2007-02-01 Nikon Corp 照明光学装置、露光装置及びマイクロデバイスの製造方法
JP4701030B2 (ja) * 2005-07-22 2011-06-15 キヤノン株式会社 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Also Published As

Publication number Publication date
US8208126B2 (en) 2012-06-26
TWI406107B (zh) 2013-08-21
KR20080094594A (ko) 2008-10-23
KR100997577B1 (ko) 2010-11-30
TW200907604A (en) 2009-02-16
JP2008270565A (ja) 2008-11-06
US20090002673A1 (en) 2009-01-01

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