KR100996018B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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Publication number
KR100996018B1
KR100996018B1 KR1020030048143A KR20030048143A KR100996018B1 KR 100996018 B1 KR100996018 B1 KR 100996018B1 KR 1020030048143 A KR1020030048143 A KR 1020030048143A KR 20030048143 A KR20030048143 A KR 20030048143A KR 100996018 B1 KR100996018 B1 KR 100996018B1
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KR
South Korea
Prior art keywords
substrate
plasma
electrode
processed
mounting surface
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KR1020030048143A
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English (en)
Korean (ko)
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KR20040010179A (ko
Inventor
사토요시츠토무
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20040010179A publication Critical patent/KR20040010179A/ko
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Publication of KR100996018B1 publication Critical patent/KR100996018B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020030048143A 2002-07-16 2003-07-15 플라즈마 처리 장치 및 플라즈마 처리 방법 KR100996018B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00206823 2002-07-16
JP2002206823A JP3880896B2 (ja) 2002-07-16 2002-07-16 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20040010179A KR20040010179A (ko) 2004-01-31
KR100996018B1 true KR100996018B1 (ko) 2010-11-22

Family

ID=31884270

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Application Number Title Priority Date Filing Date
KR1020030048143A KR100996018B1 (ko) 2002-07-16 2003-07-15 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (4)

Country Link
JP (1) JP3880896B2 (ja)
KR (1) KR100996018B1 (ja)
CN (1) CN100341120C (ja)
TW (1) TWI276173B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060054514A (ko) * 2004-11-16 2006-05-22 삼성전자주식회사 건식 식각 장치
JP4839294B2 (ja) * 2007-10-04 2011-12-21 株式会社アルバック 半導体ウエハ保持装置
CN102934218B (zh) * 2010-06-08 2016-05-04 艾克塞利斯科技公司 高温下具有机械夹持能力的受热静电夹头
CN105206495B (zh) * 2015-08-17 2018-08-07 深圳市华星光电技术有限公司 干式蚀刻装置及阵列基板干式蚀刻去除静电方法
CN106920730A (zh) * 2015-12-28 2017-07-04 中微半导体设备(上海)有限公司 一种清洁刻蚀硅基片等离子体处理装置的方法
CN106935463B (zh) * 2017-02-27 2018-09-14 成都京东方光电科技有限公司 用于干法刻蚀的承载装置及干法刻蚀设备
WO2019106979A1 (ja) 2017-11-28 2019-06-06 東京エレクトロン株式会社 処理装置
JP7329997B2 (ja) * 2019-07-09 2023-08-21 日本特殊陶業株式会社 静電チャック装置
KR20210109998A (ko) * 2020-02-28 2021-09-07 캐논 톡키 가부시키가이샤 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102637744B1 (ko) * 2021-09-30 2024-02-19 주식회사 나이스플라즈마 클램프 링이 구비된 클램프 척

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11111830A (ja) * 1997-10-07 1999-04-23 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた処理装置および処理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845911A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置用電極
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP2001148368A (ja) * 1999-11-19 2001-05-29 Matsushita Electric Ind Co Ltd 高周波印加電極とこの電極を用いたプラズマプロセス装置
JP2001284328A (ja) * 2000-03-31 2001-10-12 Taiheiyo Cement Corp セラミック部品
JP4672113B2 (ja) * 2000-07-07 2011-04-20 東京エレクトロン株式会社 誘導結合プラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11111830A (ja) * 1997-10-07 1999-04-23 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた処理装置および処理方法

Also Published As

Publication number Publication date
CN100341120C (zh) 2007-10-03
KR20040010179A (ko) 2004-01-31
JP2004055585A (ja) 2004-02-19
JP3880896B2 (ja) 2007-02-14
TWI276173B (en) 2007-03-11
CN1477682A (zh) 2004-02-25
TW200403749A (en) 2004-03-01

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