CN100341120C - 等离子体处理装置以及等离子体处理方法 - Google Patents

等离子体处理装置以及等离子体处理方法 Download PDF

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Publication number
CN100341120C
CN100341120C CNB031495362A CN03149536A CN100341120C CN 100341120 C CN100341120 C CN 100341120C CN B031495362 A CNB031495362 A CN B031495362A CN 03149536 A CN03149536 A CN 03149536A CN 100341120 C CN100341120 C CN 100341120C
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CN
China
Prior art keywords
substrate
electrode
processed substrate
plasma
plasma processing
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Expired - Lifetime
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CNB031495362A
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English (en)
Chinese (zh)
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CN1477682A (zh
Inventor
里吉务
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1477682A publication Critical patent/CN1477682A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CNB031495362A 2002-07-16 2003-07-15 等离子体处理装置以及等离子体处理方法 Expired - Lifetime CN100341120C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002206823 2002-07-16
JP2002206823A JP3880896B2 (ja) 2002-07-16 2002-07-16 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
CN1477682A CN1477682A (zh) 2004-02-25
CN100341120C true CN100341120C (zh) 2007-10-03

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Family Applications (1)

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CNB031495362A Expired - Lifetime CN100341120C (zh) 2002-07-16 2003-07-15 等离子体处理装置以及等离子体处理方法

Country Status (4)

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JP (1) JP3880896B2 (ja)
KR (1) KR100996018B1 (ja)
CN (1) CN100341120C (ja)
TW (1) TWI276173B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060054514A (ko) * 2004-11-16 2006-05-22 삼성전자주식회사 건식 식각 장치
JP4839294B2 (ja) * 2007-10-04 2011-12-21 株式会社アルバック 半導体ウエハ保持装置
CN102934218B (zh) * 2010-06-08 2016-05-04 艾克塞利斯科技公司 高温下具有机械夹持能力的受热静电夹头
CN105206495B (zh) * 2015-08-17 2018-08-07 深圳市华星光电技术有限公司 干式蚀刻装置及阵列基板干式蚀刻去除静电方法
CN106920730A (zh) * 2015-12-28 2017-07-04 中微半导体设备(上海)有限公司 一种清洁刻蚀硅基片等离子体处理装置的方法
CN106935463B (zh) * 2017-02-27 2018-09-14 成都京东方光电科技有限公司 用于干法刻蚀的承载装置及干法刻蚀设备
US20210005493A1 (en) 2017-11-28 2021-01-07 Tokyo Electron Limited Processing apparatus
JP7329997B2 (ja) * 2019-07-09 2023-08-21 日本特殊陶業株式会社 静電チャック装置
KR20210109998A (ko) * 2020-02-28 2021-09-07 캐논 톡키 가부시키가이샤 흡착장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
KR102637744B1 (ko) * 2021-09-30 2024-02-19 주식회사 나이스플라즈마 클램프 링이 구비된 클램프 척

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845911A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置用電極
JPH11111830A (ja) * 1997-10-07 1999-04-23 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた処理装置および処理方法
JP2001148368A (ja) * 1999-11-19 2001-05-29 Matsushita Electric Ind Co Ltd 高周波印加電極とこの電極を用いたプラズマプロセス装置
JP2001284328A (ja) * 2000-03-31 2001-10-12 Taiheiyo Cement Corp セラミック部品
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
US6387208B2 (en) * 2000-07-07 2002-05-14 Tokyo Electron Limited Inductive coupling plasma processing apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845911A (ja) * 1994-07-29 1996-02-16 Nippon Steel Corp プラズマ処理装置用電極
JPH11111830A (ja) * 1997-10-07 1999-04-23 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた処理装置および処理方法
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
JP2001148368A (ja) * 1999-11-19 2001-05-29 Matsushita Electric Ind Co Ltd 高周波印加電極とこの電極を用いたプラズマプロセス装置
JP2001284328A (ja) * 2000-03-31 2001-10-12 Taiheiyo Cement Corp セラミック部品
US6387208B2 (en) * 2000-07-07 2002-05-14 Tokyo Electron Limited Inductive coupling plasma processing apparatus

Also Published As

Publication number Publication date
TWI276173B (en) 2007-03-11
JP2004055585A (ja) 2004-02-19
TW200403749A (en) 2004-03-01
KR20040010179A (ko) 2004-01-31
CN1477682A (zh) 2004-02-25
KR100996018B1 (ko) 2010-11-22
JP3880896B2 (ja) 2007-02-14

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Granted publication date: 20071003