KR100994845B1 - 고체 촬상 장치 및 그 제조 방법 - Google Patents
고체 촬상 장치 및 그 제조 방법 Download PDFInfo
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- KR100994845B1 KR100994845B1 KR1020087016059A KR20087016059A KR100994845B1 KR 100994845 B1 KR100994845 B1 KR 100994845B1 KR 1020087016059 A KR1020087016059 A KR 1020087016059A KR 20087016059 A KR20087016059 A KR 20087016059A KR 100994845 B1 KR100994845 B1 KR 100994845B1
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- 238000003384 imaging method Methods 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 11
- 238000005192 partition Methods 0.000 claims abstract description 66
- 125000006850 spacer group Chemical group 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 239000012790 adhesive layer Substances 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 230000000740 bleeding effect Effects 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000009719 polyimide resin Substances 0.000 claims description 4
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 28
- 239000011521 glass Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H01L27/144—Devices controlled by radiation
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/05573—Single external layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
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Abstract
Description
Claims (10)
- 고체 촬상 소자 칩과, 이 고체 촬상 소자 칩의 수광면에 대향하여 배치된 투명판과, 상기 고체 촬상 소자 칩 및 투명판 사이의 간격을 일정하게 유지하기 위해서, 상기 고체 촬상 소자 칩의 수광면의 주변부에 틀 형상으로 배치된 스페이서와, 상기 고체 촬상 소자 칩 및 투명판 사이의 공극의 주연(周緣)을 밀봉하는 접착층을 구비하는 고체 촬상 장치로서,상기 스페이서는, 제1 격벽과, 상기 제1 격벽의 양측에 형성되고 상기 제1 격벽의 높이보다 낮은 제2 및 제3 격벽으로 이루어지는 것을 특징으로 하는 고체 촬상 장치.
- 제1항에 있어서,상기 스페이서는, 폴리이미드 수지, 에폭시 수지, 및 에폭시-아크릴레이트 수지로 이루어지는 군으로부터 선택된 적어도 1종의 수지로 이루어지는 것을 특징으로 하는 고체 촬상 장치.
- 제1항 또는 제2항에 있어서,상기 스페이서를 구성하는 3개의 격벽 중 적어도 외측의 하나에, 공기 빼기를 위한 절결(cut)이 형성되어 있는 것을 특징으로 하는 고체 촬상 장치.
- 고체 촬상 장치의 제조 방법에 있어서,복수의 고체 촬상 소자 칩이 형성된 고체 촬상 소자 웨이퍼와, 상기 고체 촬상 소자 칩의 수광면에 대향하여 배치된 투명 기판 중 적어도 어느 한쪽의, 개개의 고체 촬상 소자 칩의 주변부 또는 그에 대응하는 위치에, 상기 고체 촬상 소자 칩 및 투명 기판 사이의 간격을 일정하게 유지하기 위한 스페이서를 구성하는 높이가 서로 다른 복수개의 틀 형상의 격벽을 형성하는 공정과,상기 고체 촬상 소자 웨이퍼와 투명 기판을, 상기 복수개의 격벽을 사이에 개재시킨 상태에서, 상기 고체 촬상 소자 칩 및 투명판 사이의 공극의 주연을 밀봉하기 위해 상기 웨이퍼 위의 개개의 고체 촬상 소자 칩의 주연부에 형성된 접착제층을 개재하여 접합하는 공정과,상기 접합된 구조를 고체 촬상 소자 칩마다 절단하는 공정을 구비하는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 제4항에 있어서,상기 스페이서는, 3개의 격벽으로 이루어지는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 제5항에 있어서,상기 스페이서는, 높이가 높은 1개의 격벽과, 그 양측에 형성된 높이가 낮은 2개의 격벽으로 이루어지는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 제4항에 있어서,상기 스페이서는, 폴리이미드 수지, 에폭시 수지, 및 에폭시-아크릴레이트 수지로 이루어지는 군으로부터 선택된 적어도 1종의 수지로 이루어지는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 제4항 내지 제7항 중 어느 한 항에 있어서,상기 스페이서를 구성하는 복수의 격벽 중 적어도 외측의 하나에, 공기 빼기를 위한 절결을 형성하는 공정을 더 구비하는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
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JPJP-P-2006-00299334 | 2006-11-02 | ||
JPJP-P-2006-00299333 | 2006-11-02 | ||
JP2006299333A JP5061579B2 (ja) | 2006-11-02 | 2006-11-02 | 固体撮像装置及びその製造方法 |
JP2006299334A JP5061580B2 (ja) | 2006-11-02 | 2006-11-02 | 固体撮像装置及びその製造方法 |
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KR20080091439A KR20080091439A (ko) | 2008-10-13 |
KR100994845B1 true KR100994845B1 (ko) | 2010-11-16 |
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US (1) | US7968961B2 (ko) |
KR (1) | KR100994845B1 (ko) |
TW (1) | TWI467747B (ko) |
WO (1) | WO2008053849A1 (ko) |
Cited By (3)
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KR20170118650A (ko) * | 2015-05-11 | 2017-10-25 | 삼성전기주식회사 | 전자 모듈과 그 제조 방법 및 이를 구비하는 카메라 모듈 |
KR101792442B1 (ko) * | 2016-12-12 | 2017-10-31 | 삼성전기주식회사 | 전자 모듈과 그 제조 방법 |
US12040338B2 (en) | 2018-10-24 | 2024-07-16 | Sony Semiconductor Solutions Corporation | Imaging apparatus |
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JP4942671B2 (ja) * | 2008-01-24 | 2012-05-30 | 株式会社フジクラ | 半導体装置およびその製造方法 |
JP5315028B2 (ja) * | 2008-12-04 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 電子装置および電子装置の製造方法 |
JP2011054794A (ja) * | 2009-09-02 | 2011-03-17 | Panasonic Corp | 光学デバイス及びその製造方法 |
JP5010661B2 (ja) * | 2009-09-30 | 2012-08-29 | 株式会社東芝 | 電子機器および電子機器の製造方法 |
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KR102185061B1 (ko) | 2015-08-27 | 2020-12-01 | 삼성전기주식회사 | 이미지 센서 조립체와 그 제조 방법, 및 카메라 모듈 |
US9859180B2 (en) * | 2016-02-17 | 2018-01-02 | Semiconductor Components Industries, Llc | High reliability wafer level semiconductor packaging |
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- 2007-10-29 WO PCT/JP2007/071046 patent/WO2008053849A1/ja active Application Filing
- 2007-11-02 TW TW96141282A patent/TWI467747B/zh active
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KR20170118650A (ko) * | 2015-05-11 | 2017-10-25 | 삼성전기주식회사 | 전자 모듈과 그 제조 방법 및 이를 구비하는 카메라 모듈 |
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KR102414837B1 (ko) * | 2015-05-11 | 2022-07-01 | 삼성전기주식회사 | 전자 모듈과 그 제조 방법 및 이를 구비하는 카메라 모듈 |
KR101792442B1 (ko) * | 2016-12-12 | 2017-10-31 | 삼성전기주식회사 | 전자 모듈과 그 제조 방법 |
US12040338B2 (en) | 2018-10-24 | 2024-07-16 | Sony Semiconductor Solutions Corporation | Imaging apparatus |
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US7968961B2 (en) | 2011-06-28 |
TW200832692A (en) | 2008-08-01 |
WO2008053849A1 (fr) | 2008-05-08 |
KR20080091439A (ko) | 2008-10-13 |
TWI467747B (zh) | 2015-01-01 |
US20090200630A1 (en) | 2009-08-13 |
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