KR100975507B1 - 화학 증착에 의한 질화규소 필름 및 산질화규소 필름의퇴적 방법 - Google Patents
화학 증착에 의한 질화규소 필름 및 산질화규소 필름의퇴적 방법 Download PDFInfo
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- KR100975507B1 KR100975507B1 KR1020047008165A KR20047008165A KR100975507B1 KR 100975507 B1 KR100975507 B1 KR 100975507B1 KR 1020047008165 A KR1020047008165 A KR 1020047008165A KR 20047008165 A KR20047008165 A KR 20047008165A KR 100975507 B1 KR100975507 B1 KR 100975507B1
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- Prior art keywords
- reaction chamber
- silicon nitride
- hydrocarbylaminodisilane
- nitrogen
- gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (19)
- 히드로카르빌아미노디실란 화합물, 및 암모니아, 히드라진, 알킬히드라진 화합물 및 수소 아지드로 이루어지는 군으로부터 선택되는 질소-함유 기체를 1매 이상의 기판이 수용된 반응 챔버내로 도입시키고, 반응 온도에서 히드로카르빌아미노디실란 화합물 및 질소-함유 기체를 반응시켜 기판상에 질화규소 필름을 형성하며, 히드로카르빌아미노디실란 화합물이 헥사키스(모노에틸아미노)디실란으로 이루어지는 것을 특징으로 하는, 화학 증착에 의한 질화규소 필름의 제조 방법.
- 삭제
- 삭제
- 삭제
- 제1항에 있어서, 운반 기체를 액상 히드로카르빌아미노디실란 화합물에 주입시켜 히드로카르빌아미노디실란 화합물을 운반 기체 중 기체로서 비말동반시킨 후, 공급 시스템을 통해 이동시켜 반응 챔버로 공급하는 것을 특징으로 하는 제조 방법.
- 제1항에 있어서, 히드로카르빌아미노디실란 화합물을 기화기를 사용하여 기화시킨 후, 기화된 히드로카르빌아미노디실란 화합물을 공급 시스템을 통해 이동시켜 반응 챔버로 공급하는 것을 특징으로 하는 제조 방법.
- 제6항에 있어서, 기화기를 60 ℃ 내지 200 ℃의 온도로 가열하는 것을 특징으로 하는 제조 방법.
- 제5항 내지 제7항 중 어느 한 항에 있어서, 공급 시스템을 25 ℃ 내지 250 ℃의 온도로 유지하는 것을 특징으로 하는 제조 방법.
- 제1항 및 제5항 내지 제7항 중 어느 한 항에 있어서, 반응 챔버에, 1개의 척 (chuck) 또는 웨이퍼 보트에 적재된 1 내지 250매의 반도체 기판이 수용되는 것을 특징으로 하는 제조 방법.
- 히드로카르빌아미노디실란 화합물, 및 암모니아, 히드라진, 알킬히드라진 화합물 및 수소 아지드로 이루어지는 군으로부터 선택되는 질소-함유 기체, 및 NO, N2O, NO2, O2, O3, H2O 및 H2O2로 이루어지는 군으로부터 선택되는 산소-함유 기체를 1매 이상의 기판이 수용된 반응 챔버내로 도입시키고, 반응 온도에서 히드로카르빌아미노디실란 화합물, 질소-함유 기체 및 산소-함유 기체를 반응시켜 기판상에 산질화규소 필름을 형성하며, 히드로카르빌아미노디실란 화합물이 헥사키스(모노에틸아미노)디실란으로 이루어지는 것을 특징으로 하는, 화학 증착에 의한 산질화규소 필름의 제조 방법.
- 삭제
- 삭제
- 삭제
- 제10항에 있어서, 운반 기체를 액상 히드로카르빌아미노디실란 화합물에 주입시켜 히드로카르빌아미노디실란 화합물을 운반 기체 중 기체로서 비말동반시킨 후, 공급 시스템을 통해 이동시켜 반응 챔버로 공급하는 것을 특징으로 하는 제조 방법.
- 제10항에 있어서, 히드로카르빌아미노디실란 화합물을 기화기를 사용하여 기화시킨 후, 기화된 히드로카르빌아미노디실란 화합물을 공급 시스템을 통해 이동시켜 반응 챔버로 공급하는 것을 특징으로 하는 제조 방법.
- 제15항에 있어서, 기화기를 60 ℃ 내지 200 ℃의 온도로 가열하는 것을 특징으로 하는 제조 방법.
- 제14항 내지 제16항 중 어느 한 항에 있어서, 공급 시스템을 25 ℃ 내지 250 ℃의 온도로 유지하는 것을 특징으로 하는 제조 방법.
- 제10항 및 제14항 내지 제16항 중 어느 한 항에 있어서, 반응 챔버에, 1개의 척 또는 웨이퍼 보트에 적재된 1 내지 250매의 반도체 기판이 수용되는 것을 특징으로 하는 제조 방법.
- 제10항 및 제14항 내지 제16항 중 어느 한 항에 있어서, 산소-함유 기체가 질소도 함유하는 경우, 질소-함유 기체는 사용하지 않는 제조 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001367126A JP4021653B2 (ja) | 2001-11-30 | 2001-11-30 | Cvd法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
JPJP-P-2001-00367126 | 2001-11-30 | ||
PCT/EP2002/013869 WO2003046253A1 (en) | 2001-11-30 | 2002-11-27 | Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040063161A KR20040063161A (ko) | 2004-07-12 |
KR100975507B1 true KR100975507B1 (ko) | 2010-08-11 |
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KR1020047008165A KR100975507B1 (ko) | 2001-11-30 | 2002-11-27 | 화학 증착에 의한 질화규소 필름 및 산질화규소 필름의퇴적 방법 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6936548B2 (ko) |
EP (1) | EP1458903B1 (ko) |
JP (1) | JP4021653B2 (ko) |
KR (1) | KR100975507B1 (ko) |
CN (1) | CN100344790C (ko) |
AT (1) | ATE385265T1 (ko) |
AU (1) | AU2002356634A1 (ko) |
DE (1) | DE60224887T2 (ko) |
TW (1) | TWI265208B (ko) |
WO (1) | WO2003046253A1 (ko) |
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2001
- 2001-11-30 JP JP2001367126A patent/JP4021653B2/ja not_active Expired - Lifetime
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2002
- 2002-11-26 TW TW091134276A patent/TWI265208B/zh not_active IP Right Cessation
- 2002-11-27 AT AT02803815T patent/ATE385265T1/de not_active IP Right Cessation
- 2002-11-27 KR KR1020047008165A patent/KR100975507B1/ko active IP Right Grant
- 2002-11-27 WO PCT/EP2002/013869 patent/WO2003046253A1/en active IP Right Grant
- 2002-11-27 AU AU2002356634A patent/AU2002356634A1/en not_active Abandoned
- 2002-11-27 US US10/497,455 patent/US6936548B2/en not_active Expired - Lifetime
- 2002-11-27 CN CNB028236599A patent/CN100344790C/zh not_active Expired - Fee Related
- 2002-11-27 DE DE60224887T patent/DE60224887T2/de not_active Expired - Lifetime
- 2002-11-27 EP EP02803815A patent/EP1458903B1/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
CN100344790C (zh) | 2007-10-24 |
US20050037627A1 (en) | 2005-02-17 |
JP4021653B2 (ja) | 2007-12-12 |
DE60224887D1 (de) | 2008-03-20 |
EP1458903B1 (en) | 2008-01-30 |
CN1596324A (zh) | 2005-03-16 |
ATE385265T1 (de) | 2008-02-15 |
AU2002356634A1 (en) | 2003-06-10 |
TWI265208B (en) | 2006-11-01 |
TW200302292A (en) | 2003-08-01 |
KR20040063161A (ko) | 2004-07-12 |
WO2003046253A1 (en) | 2003-06-05 |
DE60224887T2 (de) | 2009-01-22 |
US6936548B2 (en) | 2005-08-30 |
JP2003168683A (ja) | 2003-06-13 |
EP1458903A1 (en) | 2004-09-22 |
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