KR100961815B1 - 매립 ｐ＋ 실리콘 게르마늄층의 양극화에 의한 스트레인드실리콘 온 절연체 - Google Patents

매립 ｐ＋ 실리콘 게르마늄층의 양극화에 의한 스트레인드실리콘 온 절연체 Download PDF

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KR100961815B1
KR100961815B1 KR1020077000058A KR20077000058A KR100961815B1 KR 100961815 B1 KR100961815 B1 KR 100961815B1 KR 1020077000058 A KR1020077000058 A KR 1020077000058A KR 20077000058 A KR20077000058 A KR 20077000058A KR 100961815 B1 KR100961815 B1 KR 100961815B1
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semiconductor layer
layer
relaxed
substrate
strained
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KR20070037483A (ko
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토마스 엔 아담
스티븐 더블유. 베델
조엘 피. 드 소우자
케이스 이. 포겔
알렉산더 레츠니첵
데벤드라 케이. 사다나
가밤 샤히디
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인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
KR1020077000058A 2004-07-02 2005-05-27 매립 ｐ＋ 실리콘 게르마늄층의 양극화에 의한 스트레인드실리콘 온 절연체 Expired - Fee Related KR100961815B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/883,887 2004-07-02
US10/883,887 US7172930B2 (en) 2004-07-02 2004-07-02 Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer

Publications (2)

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KR20070037483A KR20070037483A (ko) 2007-04-04
KR100961815B1 true KR100961815B1 (ko) 2010-06-08

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KR1020077000058A Expired - Fee Related KR100961815B1 (ko) 2004-07-02 2005-05-27 매립 ｐ＋ 실리콘 게르마늄층의 양극화에 의한 스트레인드실리콘 온 절연체

Country Status (7)

Country Link
US (3) US7172930B2 (enExample)
EP (1) EP1779423A1 (enExample)
JP (1) JP5089383B2 (enExample)
KR (1) KR100961815B1 (enExample)
CN (1) CN101120442A (enExample)
TW (1) TWI359477B (enExample)
WO (1) WO2006003061A1 (enExample)

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RU2331949C1 (ru) * 2006-12-21 2008-08-20 Институт физики полупроводников Сибирского отделения Российской академии наук Способ получения структуры "кремний-на-изоляторе"
US7833884B2 (en) * 2007-11-02 2010-11-16 International Business Machines Corporation Strained semiconductor-on-insulator by Si:C combined with porous process
US7772096B2 (en) * 2008-07-10 2010-08-10 International Machines Corporation Formation of SOI by oxidation of silicon with engineered porosity gradient
JP5444899B2 (ja) * 2008-09-10 2014-03-19 ソニー株式会社 固体撮像装置の製造方法、および固体撮像装置の製造基板
US20100221867A1 (en) * 2009-05-06 2010-09-02 International Business Machines Corporation Low cost soi substrates for monolithic solar cells
US20120091100A1 (en) * 2010-10-14 2012-04-19 S.O.I.Tec Silicon On Insulator Technologies Etchant for controlled etching of ge and ge-rich silicon germanium alloys
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US8518807B1 (en) * 2012-06-22 2013-08-27 International Business Machines Corporation Radiation hardened SOI structure and method of making same
US8975125B2 (en) 2013-03-14 2015-03-10 International Business Machines Corporation Formation of bulk SiGe fin with dielectric isolation by anodization
US9590077B2 (en) 2015-05-14 2017-03-07 International Business Machines Corporation Local SOI fins with multiple heights
US9385023B1 (en) 2015-05-14 2016-07-05 Globalfoundries Inc. Method and structure to make fins with different fin heights and no topography
US9627536B2 (en) 2015-06-25 2017-04-18 International Busines Machines Corporation Field effect transistors with strained channel features
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US20030119280A1 (en) 2001-12-03 2003-06-26 Jung-Il Lee Method for forming SOI substrate

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US20030003679A1 (en) * 2001-06-29 2003-01-02 Doyle Brian S. Creation of high mobility channels in thin-body SOI devices
US20030119280A1 (en) 2001-12-03 2003-06-26 Jung-Il Lee Method for forming SOI substrate

Also Published As

Publication number Publication date
US20070111463A1 (en) 2007-05-17
EP1779423A1 (en) 2007-05-02
CN101120442A (zh) 2008-02-06
TWI359477B (en) 2012-03-01
JP2008504704A (ja) 2008-02-14
TW200616141A (en) 2006-05-16
US7592671B2 (en) 2009-09-22
US20080277690A1 (en) 2008-11-13
US7172930B2 (en) 2007-02-06
WO2006003061A1 (en) 2006-01-12
JP5089383B2 (ja) 2012-12-05
US20060003555A1 (en) 2006-01-05
KR20070037483A (ko) 2007-04-04

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